JP6407056B2 - 分割装置と分割方法 - Google Patents
分割装置と分割方法 Download PDFInfo
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- JP6407056B2 JP6407056B2 JP2015031540A JP2015031540A JP6407056B2 JP 6407056 B2 JP6407056 B2 JP 6407056B2 JP 2015031540 A JP2015031540 A JP 2015031540A JP 2015031540 A JP2015031540 A JP 2015031540A JP 6407056 B2 JP6407056 B2 JP 6407056B2
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- 229920003023 plastic Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- -1 polypropylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
- B28D5/0029—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools rotating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0052—Means for supporting or holding work during breaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
最初に、図6に示すウエーハWのウエーハの裏面Waに粘着テープTを貼着する粘着テープ貼着工程を行う。粘着テープ貼着工程においては、初めにウエーハの裏面Wbに対して粘着テープTの貼着面を対向させて位置合わせを行う。位置合わせの際には、粘着テープTの外周全てがウエーハWからはみ出るようにすると好ましい。
粘着テープ貼着工程が完了した後、図6に示すように、粘着テープTが貼着されたウエーハWを載置テーブル3の載置面31に載置する載置工程を行う。
載置工程が完了した後、図8〜9に示すように、載置テーブル3に載置したウエーハWを、粘着テープTを介して押圧部6で載置面31に向かって押圧して分割起点Wcを起点にウエーハWを分割する分割工程を行う。
また、分割工程において、載置面31に載置したウエーハWを押圧部6で押圧しつつ載置面31に平行にウエーハWを移動させるウエーハ移動工程を行う。ウエーハ移動工程においては、例えば、押圧部6がウエーハWを載置面31に向かって押圧している状態で、オペレータ等がウエーハWを載置面31に平行に移動させ、ウエーハの表面Waと載置面31との接触位置を変更する。なお、ウエーハ移動工程においては、一度押圧部6でウエーハの裏面Wbの全面を押圧し、次いで、ウエーハWを平行に移動させウエーハの表面Waと載置面31との接触位置を変えた後に再度押圧部6で押圧してもよい。
または、ウエーハWを回転させてウエーハWの表面Waと載置面31との接触位置を変えてもよい。例えば、分割するチップの形状が六角形の場合には、ウエーハWの中心を中心として60度回転させ押圧部6を下降させて押圧させたのち押圧部6をY方向に走行させ、再びウエーハWを60度回転させて押圧部6を−Y方向に走行させても良い。つまり、偶数角からなる多角形の場合は、(角の数/2)−1=回転回数となる。なお、ウエーハWを載置面31に平行に移動させる移動方向は、チップの辺に対して直交する方向が良い。
3:載置テーブル 30:球状体 頂点:30a 31:載置面
32:基台 32a:底板 32b:側板 32c:側板上面
4:分割手段
5:昇降手段 50:ボールネジ 51:ガイドレール 52:モータ 53:昇降部
6:押圧部 60:ローラ 60a:ローラ表面 61:支持部
7:平行移動手段 70:ボールネジ 71:ガイドレール 72:モータ
73:可動板
W:ウエーハ Wa:ウエーハの表面 Wb:ウエーハの裏面 Wc:分割起点
T:粘着テープ S:分割予定ライン F:シート C:チップ M:端材
Claims (4)
- 分割予定ラインにより区画された領域にデバイスを形成し該分割予定ラインに沿って分割起点を形成したウエーハを載置する載置テーブルと、該載置テーブルに載置したウエーハを該分割起点を起点として分割する分割手段と、を備えた分割装置であって、
該載置テーブルは、複数の球状体と、密接させた該複数の球状体の各面の頂点を繋いでなる載置面と、該複数の球状体を密接させて配設させる基台と、を備え、
該分割手段は、該載置面に載置されたウエーハを該載置面に向かって押圧する押圧部と、該押圧部を昇降させる昇降手段と、該押圧部と該載置テーブルとを相対的に該載置面に平行に移動させる平行移動手段と、を備え、
該載置面と該押圧部とでウエーハを押圧して分割する分割装置。 - 請求項1記載の分割装置を用いて、前記分割予定ラインに沿って前記分割起点が形成されたウエーハを、前記分割起点を起点に分割する分割方法であって、
ウエーハの裏面に粘着テープを貼着する粘着テープ貼着工程と、
該粘着テープが貼着されたウエーハを前記載置テーブルの載置面に載置する載置工程と、
前記載置テーブルに載置したウエーハを該粘着テープを介して押圧部で前記載置面に向かって押圧し前記分割起点を起点に分割する分割工程と、からなるウエーハの分割方法。 - 前記載置工程において、
前記載置面と前記載置面に載置するウエーハの下面との間にシートを配設する請求項2記載のウエーハの分割方法。 - 前記分割工程において、前記載置面に載置したウエーハを前記押圧部で押圧しつつ前記載置面に平行にウエーハを移動させるウエーハ移動工程を含む請求項2または3のいずれかに記載のウエーハの分割方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015031540A JP6407056B2 (ja) | 2015-02-20 | 2015-02-20 | 分割装置と分割方法 |
TW105100543A TWI676211B (zh) | 2015-02-20 | 2016-01-08 | 晶圓的分割裝置及分割方法 |
KR1020160013942A KR102364113B1 (ko) | 2015-02-20 | 2016-02-04 | 웨이퍼의 분할 장치 및 분할 방법 |
US15/046,672 US9472459B2 (en) | 2015-02-20 | 2016-02-18 | Wafer divider and wafer division method |
CN201610094327.9A CN105914142B (zh) | 2015-02-20 | 2016-02-19 | 晶片的分割装置和分割方法 |
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JP2015031540A JP6407056B2 (ja) | 2015-02-20 | 2015-02-20 | 分割装置と分割方法 |
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JP2016154173A JP2016154173A (ja) | 2016-08-25 |
JP6407056B2 true JP6407056B2 (ja) | 2018-10-17 |
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US (1) | US9472459B2 (ja) |
JP (1) | JP6407056B2 (ja) |
KR (1) | KR102364113B1 (ja) |
CN (1) | CN105914142B (ja) |
TW (1) | TWI676211B (ja) |
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CN114043558B (zh) * | 2021-09-23 | 2024-05-28 | 深圳市平台科技有限公司 | 一种半导体加工方法及装置 |
JP2024078574A (ja) | 2022-11-30 | 2024-06-11 | 株式会社ディスコ | 樹脂部材及び分割装置 |
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2015
- 2015-02-20 JP JP2015031540A patent/JP6407056B2/ja active Active
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2016
- 2016-01-08 TW TW105100543A patent/TWI676211B/zh active
- 2016-02-04 KR KR1020160013942A patent/KR102364113B1/ko active IP Right Grant
- 2016-02-18 US US15/046,672 patent/US9472459B2/en active Active
- 2016-02-19 CN CN201610094327.9A patent/CN105914142B/zh active Active
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Publication number | Publication date |
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KR102364113B1 (ko) | 2022-02-18 |
CN105914142B (zh) | 2020-10-09 |
KR20160102336A (ko) | 2016-08-30 |
CN105914142A (zh) | 2016-08-31 |
TW201705242A (zh) | 2017-02-01 |
TWI676211B (zh) | 2019-11-01 |
US20160247723A1 (en) | 2016-08-25 |
JP2016154173A (ja) | 2016-08-25 |
US9472459B2 (en) | 2016-10-18 |
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