JP6382151B2 - 基板熱処理装置、基板熱処理方法、記録媒体及び熱処理状態検知装置 - Google Patents

基板熱処理装置、基板熱処理方法、記録媒体及び熱処理状態検知装置 Download PDF

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Publication number
JP6382151B2
JP6382151B2 JP2015098385A JP2015098385A JP6382151B2 JP 6382151 B2 JP6382151 B2 JP 6382151B2 JP 2015098385 A JP2015098385 A JP 2015098385A JP 2015098385 A JP2015098385 A JP 2015098385A JP 6382151 B2 JP6382151 B2 JP 6382151B2
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temperature
heat treatment
substrate
centroid
center
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Japanese (ja)
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JP2016066779A (ja
Inventor
広大 東
広大 東
晋一朗 三坂
晋一朗 三坂
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to TW104131061A priority Critical patent/TWI610387B/zh
Priority to US14/861,135 priority patent/US10049905B2/en
Priority to SG10201507918SA priority patent/SG10201507918SA/en
Priority to KR1020150135284A priority patent/KR102409752B1/ko
Priority to CN201510617497.6A priority patent/CN105470165B/zh
Publication of JP2016066779A publication Critical patent/JP2016066779A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2015098385A 2014-09-25 2015-05-13 基板熱処理装置、基板熱処理方法、記録媒体及び熱処理状態検知装置 Active JP6382151B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
TW104131061A TWI610387B (zh) 2014-09-25 2015-09-21 基板熱處理裝置、基板熱處理方法、記錄媒體及熱處理狀態檢測裝置
US14/861,135 US10049905B2 (en) 2014-09-25 2015-09-22 Substrate heat treatment apparatus, substrate heat treatment method, storage medium and heat-treatment-condition detecting apparatus
SG10201507918SA SG10201507918SA (en) 2014-09-25 2015-09-23 Substrate heat treatment apparatus, substrate heat treatment method, storage medium and heat-treatment-condition detecting apparatus
KR1020150135284A KR102409752B1 (ko) 2014-09-25 2015-09-24 기판 열처리 장치, 기판 열처리 방법, 기록 매체 및 열처리 상태 검지 장치
CN201510617497.6A CN105470165B (zh) 2014-09-25 2015-09-24 基板热处理装置、基板热处理方法以及热处理状态检测装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014195693 2014-09-25
JP2014195693 2014-09-25

Publications (2)

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JP2016066779A JP2016066779A (ja) 2016-04-28
JP6382151B2 true JP6382151B2 (ja) 2018-08-29

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JP2015098385A Active JP6382151B2 (ja) 2014-09-25 2015-05-13 基板熱処理装置、基板熱処理方法、記録媒体及び熱処理状態検知装置

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JP (1) JP6382151B2 (ko)
KR (1) KR102409752B1 (ko)
SG (1) SG10201507918SA (ko)
TW (1) TWI610387B (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6683579B2 (ja) * 2016-09-26 2020-04-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
US10446423B2 (en) * 2016-11-19 2019-10-15 Applied Materials, Inc. Next generation warpage measurement system
KR102467605B1 (ko) 2017-06-28 2022-11-16 도쿄엘렉트론가부시키가이샤 열처리 장치, 열처리 장치의 관리 방법 및 기억 매체
JP7003759B2 (ja) * 2017-06-28 2022-01-21 東京エレクトロン株式会社 熱処理装置、熱処理装置の管理方法及び記憶媒体
JP6964005B2 (ja) * 2018-01-09 2021-11-10 東京エレクトロン株式会社 熱処理装置、熱板の冷却方法及びコンピュータ読み取り可能な記録媒体
JP6994424B2 (ja) * 2018-04-17 2022-01-14 東京エレクトロン株式会社 基板処理装置、基板処理方法、及び記憶媒体
JP7003260B2 (ja) * 2018-06-22 2022-01-20 東京エレクトロン株式会社 基板処理装置、基板処理方法、及び記憶媒体
JP2020035834A (ja) * 2018-08-28 2020-03-05 キオクシア株式会社 加熱処理装置および加熱処理方法
CN114518690A (zh) * 2020-11-19 2022-05-20 中国科学院微电子研究所 晶圆工作台、光刻机及晶圆工作台温度调节方法
CN114520172A (zh) * 2022-02-16 2022-05-20 北京北方华创微电子装备有限公司 晶圆放置状态检测方法、半导体工艺腔室和设备

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01245142A (ja) * 1988-03-28 1989-09-29 Hitachi Ltd 予防保全装置
US5001423A (en) * 1990-01-24 1991-03-19 International Business Machines Corporation Dry interface thermal chuck temperature control system for semiconductor wafer testing
JP3581303B2 (ja) * 2000-07-31 2004-10-27 東京エレクトロン株式会社 判別方法及び処理装置
JP4059694B2 (ja) * 2002-03-27 2008-03-12 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US7427329B2 (en) * 2002-05-08 2008-09-23 Asm International N.V. Temperature control for single substrate semiconductor processing reactor
JP3781014B2 (ja) * 2003-03-31 2006-05-31 株式会社Ｓｕｍｃｏ シリコンウェーハ熱処理治具およびシリコンウェーハ熱処理方法
JP4259279B2 (ja) * 2003-10-28 2009-04-30 パナソニック株式会社 電子部品装着方法
JP2006120721A (ja) * 2004-10-19 2006-05-11 Toshiba Corp 基板処理装置
JP4444090B2 (ja) 2004-12-13 2010-03-31 東京エレクトロン株式会社 熱処理板の温度設定方法，熱処理板の温度設定装置，プログラム及びプログラムを記録したコンピュータ読み取り可能な記録媒体
JP4755498B2 (ja) * 2006-01-06 2011-08-24 東京エレクトロン株式会社 加熱装置及び加熱方法
JP4699283B2 (ja) * 2006-05-23 2011-06-08 東京エレクトロン株式会社 熱処理板の温度制御方法、プログラム及び熱処理板の温度制御装置
JP2008053454A (ja) * 2006-08-24 2008-03-06 Dainippon Printing Co Ltd ベーク装置およびベーク方法
US20090034582A1 (en) * 2007-08-02 2009-02-05 Tokyo Electron Limited Tbs Broadcast Center Apparatus for hot plate substrate monitoring and control
JP2009123816A (ja) * 2007-11-13 2009-06-04 Sokudo:Kk 熱処理装置および熱処理方法
JP5538050B2 (ja) * 2009-05-15 2014-07-02 シャープ株式会社 局所加熱装置、及び局所加熱する位置の調整方法
JP5299442B2 (ja) * 2011-01-18 2013-09-25 東京エレクトロン株式会社 基板加熱装置、基板加熱方法及び記憶媒体
FR2978870B1 (fr) * 2011-08-01 2016-11-18 Commissariat Energie Atomique Dispositif de localisation de points chauds avec des fluxmetres thermiques

Also Published As

Publication number Publication date
TWI610387B (zh) 2018-01-01
TW201626487A (zh) 2016-07-16
SG10201507918SA (en) 2016-04-28
JP2016066779A (ja) 2016-04-28
KR102409752B1 (ko) 2022-06-17
KR20160036654A (ko) 2016-04-04

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