JP6382151B2 - Substrate heat treatment apparatus, substrate heat treatment method, recording medium, and heat treatment state detection apparatus - Google Patents

Description

  The present disclosure relates to a substrate heat treatment apparatus, a substrate heat treatment method, a recording medium, and a heat treatment state detection apparatus.

  When manufacturing a semiconductor element, heat treatment of a wafer is performed in various steps. In the heat treatment, it is required to reliably heat each part of the wafer. Patent Document 1 discloses a heat treatment apparatus provided with an abnormality detection means that an abnormality occurs when an integrated value of a difference between a surface temperature of a heat treatment plate and a set temperature of the heat treatment plate is equal to or less than a predetermined threshold value. ing.

JP 2009-123816 A

  In the heat treatment apparatus, there is a possibility that an abnormality that has occurred partially cannot be detected. An object of the present disclosure is to provide an apparatus, a method, and a recording medium that can more reliably detect an abnormality in a heat treatment state.

  A substrate heat treatment apparatus according to the present disclosure corresponds to a placement unit for placing a substrate, a heat treatment unit for heating or cooling a substrate on the placement unit, and a plurality of locations on the substrate on the placement unit, respectively. It is equivalent to the center of gravity when the temperature detected by the plurality of temperature sensors is regarded as the mass, and the heat treatment unit is controlled based on the temperature detected by the plurality of temperature sensors and the temperature detected by the plurality of temperature sensors. And a controller configured to execute the calculation of the position of the temperature centroid to be detected and the detection of the heat treatment state of the substrate based on the position of the temperature centroid.

  According to this substrate heat treatment apparatus, the heat treatment state of the substrate is detected based on the position of the temperature center of gravity. The position of the temperature center of gravity varies with high sensitivity according to a partial abnormality in the heat treatment state. For this reason, the partial abnormality of the heat treatment state can be detected with high sensitivity based on the position of the temperature center of gravity. Therefore, it is possible to more reliably detect abnormality in the heat treatment state.

  The control unit calculates the position of the temperature centroid in a plane parallel to the substrate as the first centroid position, calculates the position of the temperature centroid in the radial direction orthogonal to the center of the substrate as the second centroid position, You may detect the heat processing state of a board | substrate based on the 1st and 2nd gravity center position. The first barycentric position fluctuates with high sensitivity according to a partial abnormality of the heat treatment state, but hardly changes for an abnormality in which the temperature distribution is point-symmetric with respect to the center of the substrate. Specific examples of such an abnormality include a case where the center portion of the substrate is lifted from the placement portion, and a case where the entire peripheral portion of the substrate is lifted uniformly from the placement portion. On the other hand, the second barycentric position fluctuates in accordance with the temperature distribution along the radial direction of the substrate, and therefore fluctuates with high sensitivity even when the temperature distribution is point-symmetric with respect to the center of the substrate. Therefore, by detecting the heat treatment state of the substrate based on both the first and second center-of-gravity positions, an abnormality in the heat treatment state can be detected more reliably.

  The control unit may calculate the second center-of-gravity position by regarding the average value of the temperatures detected by the plurality of temperature sensors at the same position in the radial direction as the mass of the position. The control unit may calculate the second center-of-gravity position by regarding the average value of the temperatures detected by the temperature sensor in each of the plurality of regions arranged concentrically with the substrate in the radial direction as the mass of the region. In these cases, the second centroid position can be calculated with higher accuracy.

  The control unit uses the reference position determined based on the position of the temperature centroid when the substrate is normally heat-treated, and detects the heat treatment state of the substrate based on the difference between the position of the temperature centroid and the reference position. It may be configured. In this case, the heat treatment state of the substrate is detected based on a component deviating from the reference position among the positions of the temperature gravity center. Based on the component deviating from the reference position, it is possible to simplify the criterion for determining whether the heat treatment state is normal or abnormal.

  The control unit uses an average value of the temperature center of gravity calculated in a plurality of normal heat treatments as a reference position, and an allowable range determined based on the standard deviation of the temperature center of gravity calculated in a plurality of normal heat treatments Further, when the difference between the position of the center of gravity of the temperature and the reference position is outside the allowable range, it may be configured to detect that the heat treatment state of the substrate is abnormal. In this case, an abnormality in the heat treatment state can be detected based on a simple criterion whether or not the position of the temperature center of gravity is within an allowable range. Further, by using the average value as a reference position and using an allowable range determined based on the standard deviation, it is possible to allow appropriate variation and reduce unnecessary abnormality detection.

  The control unit may be configured to further execute outputting information related to the position of the temperature gravity center. Based on the position of the temperature center of gravity, it is also possible to grasp in which direction the abnormality of the heat treatment state has occurred. For this reason, by outputting information on the position of the temperature center of gravity, it is possible to provide information useful for specifying the position that caused the abnormality in the heat treatment state.

  The control unit may be configured to further execute output of trajectory information of a difference between the position of the temperature gravity center and the reference position. In this case, the locus information of the component deviating from the reference position among the positions of the temperature gravity center is output. According to the locus information of the component deviating from the reference position, it is possible to more easily grasp in which direction the temperature abnormality has occurred. Therefore, it is possible to provide more useful information for specifying the position that has caused the abnormality in the heat treatment state.

  The heat treatment unit can be controlled for each of a plurality of processing regions arranged along the substrate, and the control unit identifies a treatment region with insufficient heat treatment based on the position of the temperature center of gravity, and heat treatment of the treatment region. It may be configured to further execute the control of the heat treatment unit so as to promote the heat treatment. In this case, the heat treatment reliability can be improved by performing the heat treatment according to the position information of the temperature center of gravity.

Ｘ，Ｙ：直交座標系における温度重心の位置
ｘｉ，ｙｉ：直交座標系における温度センサの位置
Ｔｉ：温度センサにより検出された温度
ｎ：温度センサの数 The control unit may be configured to calculate the position of the temperature center of gravity according to equations (1) and (2).

X, Y: temperature centroid position in orthogonal coordinate system xi, yi: temperature sensor position in orthogonal coordinate system Ti: temperature detected by temperature sensor n: number of temperature sensors

  Placing a substrate on the mounting unit, heating or cooling the substrate on the mounting unit by a heat treatment unit, and a plurality of temperature sensors arranged to correspond to a plurality of locations on the substrate on the mounting unit, respectively The temperature of the center of gravity corresponding to the center of gravity when the temperatures detected by the plurality of temperature sensors are regarded as mass is detected. Calculating and detecting the heat treatment state of the substrate based on the position of the temperature center of gravity.

  According to this substrate heat treatment method, the heat treatment state of the substrate is detected based on the position of the temperature center of gravity. The position of the temperature center of gravity varies with high sensitivity according to a partial abnormality in the heat treatment state. For this reason, the partial abnormality of the heat treatment state can be detected with high sensitivity based on the position of the temperature center of gravity. Therefore, it is possible to more reliably detect abnormality in the heat treatment state.

  The position of the temperature centroid in a plane parallel to the substrate is calculated as the first centroid position, the position of the temperature centroid in the radial direction orthogonal to the center of the substrate is calculated as the second centroid position, and the first and second The heat treatment state of the substrate may be detected based on the position of the center of gravity. The first barycentric position fluctuates with high sensitivity according to a partial abnormality of the heat treatment state, but hardly changes for an abnormality in which the temperature distribution is point-symmetric with respect to the center of the substrate. Specific examples of such an abnormality include a case where the center portion of the substrate is lifted from the placement portion, and a case where the entire peripheral portion of the substrate is lifted uniformly from the placement portion. On the other hand, the second barycentric position fluctuates in accordance with the temperature distribution along the radial direction of the substrate, and therefore fluctuates with high sensitivity even when the temperature distribution is point-symmetric with respect to the center of the substrate. Therefore, by detecting the heat treatment state of the substrate based on both the first and second center-of-gravity positions, an abnormality in the heat treatment state can be detected more reliably.

  The second center-of-gravity position may be calculated by regarding the average value of the temperatures detected by a plurality of temperature sensors at the same position in the radial direction as the mass of the position. The second center-of-gravity position may be calculated by regarding the average value of the temperatures detected by the temperature sensor in each of the plurality of regions concentrically with the substrate and arranged in the radial direction as the mass of the region. In these cases, the second centroid position can be calculated with higher accuracy.

  A reference position determined based on the position of the temperature centroid when the substrate is normally heat-treated may be used, and the heat treatment state of the substrate may be detected based on the difference between the position of the temperature centroid and the reference position. In this case, the heat treatment state of the substrate is detected based on a component deviating from the reference position among the positions of the temperature gravity center. Based on the component deviating from the reference position, it is possible to simplify the criterion for determining whether the heat treatment state is normal or abnormal.

  Using the average value of the position of the temperature center of gravity calculated in a plurality of normal heat treatments as a reference position, further using an allowable range determined based on the standard deviation of the position of the temperature center of gravity calculated in a plurality of normal heat treatments, When the difference between the position of the temperature center of gravity and the reference position is outside the allowable range, it may be detected that the heat treatment state of the substrate is abnormal. In this case, an abnormality in the heat treatment state can be detected based on a simple criterion whether or not the position of the temperature center of gravity is within an allowable range. Further, by using the average value as a reference position and using an allowable range determined based on the standard deviation, it is possible to allow appropriate variation and reduce unnecessary abnormality detection.

  It may further include outputting information related to the position of the temperature centroid. Based on the position of the temperature center of gravity, it is also possible to grasp in which direction the abnormality of the heat treatment state has occurred. For this reason, by outputting information on the position of the temperature center of gravity, it is possible to provide information useful for specifying the position that caused the abnormality in the heat treatment state.

  It may further include outputting trajectory information of the difference between the position of the temperature center of gravity and the reference position. In this case, the locus information of the component deviating from the reference position among the positions of the temperature gravity center is output. According to the locus information of the component deviating from the reference position, it is possible to more easily grasp in which direction the temperature abnormality has occurred. Therefore, it is possible to provide more useful information for specifying the position that has caused the abnormality in the heat treatment state.

  It may further include identifying a treatment region in which heat treatment is insufficient based on the position of the temperature center of gravity, and promoting heat treatment of the treatment region. In this case, the heat treatment reliability can be improved by performing the heat treatment according to the position information of the temperature center of gravity.

  The position of the temperature centroid may be calculated by the above equations (1) and (2).

  A recording medium according to the present disclosure is a computer-readable recording medium in which a program for causing an apparatus to execute the substrate heat treatment method is recorded.

  The heat treatment state detection device according to the present disclosure obtains temperatures detected by a plurality of temperature sensors arranged so as to respectively correspond to a plurality of locations of the substrate to be heat-treated on the placement unit, and the temperature It is configured to calculate the position of the temperature centroid corresponding to the centroid when regarded as mass, and to detect the heat treatment state of the substrate based on the position of the temperature centroid.

  According to the present disclosure, it is possible to more reliably detect an abnormality in the heat treatment state.

It is a perspective view of a coating / developing system. It is sectional drawing which follows the II-II line | wire in FIG. It is sectional drawing which follows the III-III line | wire in FIG. It is a schematic diagram of a heat treatment unit. It is a top view of a hot platen. It is a flowchart of the heat processing procedure of the wafer by a heat processing unit. It is a graph which illustrates the time-dependent change of the temperature during heat processing. It is a graph which illustrates the locus | trajectory of the 1st gravity center position during heat processing. It is a graph which illustrates the locus | trajectory of the 2nd gravity center position during heat processing. It is a graph which illustrates the locus of the difference of the position of the temperature gravity center during heating, and a standard position. It is a flowchart which shows the modification of the heat processing procedure.

  Hereinafter, embodiments will be described in detail with reference to the drawings. In the description, the same elements or elements having the same functions are denoted by the same reference numerals, and redundant description is omitted.

[Substrate processing system]
First, the outline | summary of the substrate processing system 1 which concerns on this embodiment is demonstrated. The substrate processing system 1 includes a coating / developing device 2 and an exposure device 3. The exposure apparatus 3 performs an exposure process for a resist film (photosensitive film). Specifically, the exposure target portion of the resist film is irradiated with energy rays by a method such as immersion exposure. The coating / developing apparatus 2 performs a process of forming a resist film on the surface of the wafer W (substrate) before the exposure process by the exposure apparatus 3, and performs a development process of the resist film after the exposure process.

  As shown in FIGS. 1 and 2, the coating / developing apparatus 2 includes a carrier block 4, a processing block 5, and an interface block 6. The carrier block 4, the processing block 5, and the interface block 6 are arranged in the horizontal direction.

  The carrier block 4 includes a carrier station 12 and a carry-in / carry-out unit 13. The loading / unloading unit 13 is interposed between the carrier station 12 and the processing block 5. The carrier station 12 supports a plurality of carriers 11. The carrier 11 contains a plurality of circular wafers W, for example, in a sealed state, and has an opening / closing door for taking in and out the wafers W on the side surface 11a side. The carrier 11 is detachably installed on the carrier station 12 so that the side surface 11a faces the loading / unloading unit 13 side.

  The carry-in / carry-out unit 13 has a plurality of opening / closing doors 13 a corresponding to the plurality of carriers 11 on the carrier station 12. By opening the open / close door and the open / close door 13a on the side surface 11a at the same time, the inside of the carrier 11 and the inside of the carry-in / out unit 13 are communicated. The carry-in / carry-out unit 13 includes a delivery arm A1. The delivery arm A <b> 1 takes out the wafer W from the carrier 11 and delivers it to the processing block 5, receives the wafer W from the processing block 5, and returns it into the carrier 11.

  The processing block 5 has a plurality of processing modules 14, 15, 16, and 17. As shown in FIGS. 2 and 3, the processing modules 14, 15, 16, and 17 include a plurality of liquid processing units U1, a plurality of heat treatment units U2, and a transfer arm A3 that transfers the wafer W to these units. Built-in. The processing module 17 further includes a direct transfer arm A6 that transfers the wafer W without passing through the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 applies a liquid to the surface of the wafer W. The heat treatment unit U2 performs the heat treatment by heating the wafer W with, for example, a hot plate and cooling the heated wafer W with, for example, a cooling plate.

  The processing module 14 is a BCT module that forms a lower layer film on the surface of the wafer W by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 14 applies a liquid for forming a lower layer film on the wafer W. The heat treatment unit U2 of the processing module 14 performs various heat treatments associated with the formation of the lower layer film. Specific examples of the heat treatment include heat treatment for curing the liquid for forming the lower layer film.

  The processing module 15 is a COT module that forms a resist film on a lower layer film by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 15 applies a liquid for forming a resist film on the lower layer film. The heat treatment unit U2 of the processing module 15 performs various heat treatments accompanying the formation of the resist film. Specific examples of the heat treatment include heat treatment for curing a liquid for forming a resist film.

  The processing module 16 is a TCT module that forms a lower layer film on a resist film by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 16 applies a liquid for forming an upper layer film on the resist film. The heat treatment unit U2 of the processing module 16 performs various heat treatments accompanying the formation of the upper layer film. Specific examples of the heat treatment include heat treatment for curing the liquid for forming the upper layer film.

  The processing module 17 is a DEV module that performs development processing of the resist film after exposure by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 17 applies a developing solution on the exposed surface of the wafer W, and then rinses it with a rinsing solution, thereby developing the resist film. The heat treatment unit U2 of the processing module 17 performs various heat treatments associated with the development processing. Specific examples of the heat treatment include heat treatment before development processing (PEB: Post Exposure Bake), heat treatment after development processing (PB: Post Bake), and the like.

  In the processing block 5, a shelf unit U10 is provided on the carrier block 4 side, and a shelf unit U11 is provided on the interface block 6 side. The shelf unit U10 is provided so as to extend from the floor surface to the processing module 16, and is partitioned into a plurality of cells arranged in the vertical direction. An elevating arm A7 is provided in the vicinity of the shelf unit U10. The raising / lowering arm A7 raises / lowers the wafer W between the cells of the shelf unit U10. The shelf unit U11 is provided so as to extend from the floor surface to the upper part of the processing module 17, and is partitioned into a plurality of cells arranged in the vertical direction.

  The interface block 6 incorporates a delivery arm A8 and is connected to the exposure apparatus 3. The delivery arm A8 delivers the wafer W arranged on the shelf unit U11 to the exposure apparatus 3, receives the wafer W from the exposure apparatus 3, and returns it to the shelf unit U11.

  The substrate processing system 1 performs the coating / developing process according to the following procedure. First, the transfer arm A1 transports the wafer W in the carrier 11 to the shelf unit U10. The lift arm A7 places the wafer W in the cell for the processing module 14, and the transfer arm A3 transfers the wafer W to each unit in the processing module 14. The liquid processing unit U1 and the heat treatment unit U2 of the processing module 14 form a lower layer film on the surface of the wafer W transferred by the transfer arm A3. When the formation of the lower layer film is completed, the transfer arm A3 returns the wafer W to the shelf unit U10.

  Next, the lift arm A7 places the wafer W returned to the shelf unit U10 in the cell for the processing module 15, and the transfer arm A3 transfers it to each unit in the processing module 15. The liquid processing unit U1 and the heat treatment unit U2 of the processing module 15 form a resist film on the lower layer film of the wafer W transferred by the transfer arm A3. When the formation of the resist film is completed, the transfer arm A3 returns the wafer W to the shelf unit U10.

  Next, the wafer W returned to the shelf unit U <b> 10 is placed in the cell for the processing module 16 by the elevating arm A <b> 7, and the transfer arm A <b> 3 is transferred to each unit in the processing module 16. The liquid processing unit U1 and the heat treatment unit U2 of the processing module 16 form an upper layer film on the resist film of the wafer W transferred by the transfer arm A3. When the formation of the upper layer film is completed, the transfer arm A3 returns the wafer W to the shelf unit U10.

  Next, the lift arm A7 arranges the wafer W returned to the shelf unit U10 in the cell for the processing module 17, and the transfer arm A6 directly transfers it to the shelf unit U11. The wafer W is delivered and the arm A8 sends it to the exposure apparatus 3. When the exposure process in the exposure apparatus 3 is completed, the transfer arm A8 receives the wafer W from the exposure apparatus 3 and returns it to the shelf unit U11.

  Next, the transfer arm A3 of the processing module 17 transfers the wafer W returned to the shelf unit U11 to each unit in the processing module 17. The liquid processing unit U1 and the heat treatment unit U2 of the processing module 17 perform development processing of the resist film of the wafer W transferred by the transfer arm A3 and heat treatment associated therewith. When the development of the resist film is completed, the transfer arm A3 transfers the wafer W to the shelf unit U10.

  Next, the wafer W transferred to the shelf unit U <b> 10 is placed in the delivery cell by the lift arm A <b> 7, and the delivery arm A <b> 1 returns into the carrier 11. Thus, the coating / developing process is completed.

[Substrate heat treatment equipment]
Subsequently, the heat treatment unit U2 will be described in detail as an example of the substrate heat treatment apparatus. As shown in FIG. 4, the heat treatment unit U <b> 2 includes a hot plate 20, a support base 30, a plurality of temperature sensors 40, an elevating mechanism 50, and a control unit 100.

  The hot plate 20 has a disk shape and includes a plurality of heaters 21. The hot plate 20 functions as a mounting unit for mounting the wafer W, and the heater 21 functions as a heat treatment unit for heating the wafer W on the mounting unit. The hot plate 20 is divided into a plurality of regions in plan view, and the heater 21 is arranged for each region. FIG. 5 is a plan view showing an example of the arrangement of the heaters 21. The hot plate 20 shown in FIG. 5 is divided into a total of seven regions, a central region 20a, two regions 20b surrounding the region 20a, and four regions 20c further surrounding the region 20b. A total of seven heaters 21 are built in each of 20b and 20c.

  A plurality of proximity pins 22 scattered along the upper surface of the hot plate 20 are provided on the hot plate 20. The plurality of proximity pins 22 support the wafer W placed on the hot plate 20 and secure a gap between the hot plate 20 and the wafer W.

  The support base 30 includes a bottom plate 31 and a peripheral wall 32. The bottom plate 31 faces the hot plate 20. The peripheral wall 32 is provided along the periphery of the bottom plate 31 and supports the outer peripheral portion of the hot plate 20. In the state where the peripheral wall 32 supports the hot plate 20, a cavity 33 is formed in the support base 30.

  The plurality of temperature sensors 40 are arranged so as to respectively correspond to a plurality of locations on the wafer W on the hot platen 20. That is, the temperature sensors 40 are scattered along a plane facing the wafer W on the hot platen 20. As an example, the plurality of temperature sensors 40 are attached to the lower surface of the hot plate 20 in the cavity 33. In the example shown in FIG. 5, seven temperature sensors 40 are provided for each of the regions 20 a, 20 b, and 20 c, and each temperature sensor 40 is disposed under the heater 21.

  Note that the plurality of temperature sensors 40 need only be arranged so as to correspond to a plurality of locations on the wafer W, respectively, and thus do not necessarily have to be arranged as described above. For example, the temperature sensor 40 may not be attached to the lower surface of the hot plate 20, and the temperature sensor 40 may be built in the hot plate 20 together with the heater 21. The plurality of temperature sensors 40 are not necessarily arranged for each of the regions 20a, 20b, and 20c.

  The lifting mechanism 50 includes a plurality of (for example, three) lifting pins 51 and a drive unit 52. The elevating pins 51 move up and down through the peripheral wall 32 and the heat plate 20. The upper part of the lift pins 51 protrudes on the hot plate 20 as the lift pins 51 are raised, and is accommodated in the hot plate 20 as the lift pins 51 are lowered. The drive unit 52 incorporates a drive source such as a motor or an air cylinder, and raises and lowers the lift pins 51. The elevating mechanism 50 elevates the wafer W on the hot plate 20 by elevating the elevating pins 51.

  The control unit 100 controls the heater 21 based on the temperatures detected by the plurality of temperature sensors 40, and the position of the temperature center of gravity corresponding to the center of gravity when the temperatures detected by the plurality of temperature sensors 40 are regarded as masses. And detecting the heat treatment state of the wafer W based on the position of the center of gravity of the temperature. The control unit 100 acquires the temperatures detected by the plurality of temperature sensors 40, calculates the position of the temperature center of gravity corresponding to the center of gravity when the temperature is regarded as mass, and the wafer based on the position of the temperature center of gravity. A heat treatment state detection device that detects the heat treatment state of W is configured.

  As an example, the control unit 100 includes a temperature acquisition unit 111, a heater control unit 112, a wafer transfer control unit 113, a gravity center calculation unit 114, a difference calculation unit 115, a heat treatment state detection unit 116, and an abnormality notification unit 117. A position information output unit 118, a data storage unit 121, and a display unit 122.

  The temperature acquisition unit 111 acquires the temperatures detected by the plurality of temperature sensors 40 and stores them in the data storage unit 121. The heater control unit 112 controls the plurality of heaters 21 based on the temperature stored in the data storage unit 121 by the temperature acquisition unit 111. The wafer transfer control unit 113 controls the transfer arm A3 and the lifting mechanism 50 so as to transfer and place the wafer W on the hot plate 20 and transfer the wafer W from the hot plate 20.

  The centroid calculation unit 114 calculates the position of the temperature centroid based on the temperature stored in the data storage unit 121 and stores the calculation result in the data storage unit 121. The difference calculation unit 115 acquires the position of the temperature centroid stored in the data storage unit 121, calculates the difference between the position of the temperature centroid and the reference position, and stores the calculation result in the data storage unit 121. The reference position is determined based on, for example, the position of the temperature center of gravity when the wafer W is normally heat-treated. The heat treatment state detection unit 116 detects the heat treatment state of the wafer W based on the difference between the position of the temperature center of gravity and the reference position.

  The abnormality notifying unit 117 outputs information for notifying abnormality of the heat treatment state to the display unit 122. The position information output unit 118 outputs information related to the position of the temperature center of gravity to the display unit 122. The display unit 122 outputs the information output from the abnormality notification unit 117 and the position information output unit 118 as a display image.

  Such a control unit 100 includes, for example, one or a plurality of control computers. In this case, each element of the control unit 100 is configured by cooperation of a processor, a memory, a monitor, and the like of the control computer. A program for causing the control computer to function as the control unit 100 may be recorded on a computer-readable recording medium. In this case, the recording medium records a program for causing the apparatus to execute a substrate heat treatment method described later. Examples of the computer-readable recording medium include a hard disk, a compact disk, a flash memory, a flexible disk, and a memory card.

  Note that the hardware constituting each element of the control unit 100 is not necessarily limited to a processor, a memory, and a monitor. For example, each element of the control unit 100 may be configured by an electric circuit specialized for its function, or may be configured by an ASIC (Application Specific Integrated Circuit) in which the electric circuit is integrated.

  The control unit 100 may be divided into a plurality of hardware. For example, the control unit 100 may be divided into hardware that controls the heat treatment unit U2 and hardware that constitutes the heat treatment state detection device. These hardware may be connected either by wire or wirelessly, or may be arranged at a location distant from each other and connected via a network line.

[Substrate heat treatment method]
Subsequently, as an example of the substrate heat treatment method, a heat treatment procedure of the wafer W by the heat treatment unit U2 will be described.

  As shown in FIG. 6, the control unit 100 first executes step S01. In step S01, the temperature acquisition unit 111 acquires the temperatures detected by the plurality of temperature sensors 40, and the heater control unit 112 controls the plurality of heaters 21 based on the temperatures acquired by the temperature acquisition unit 111. Specifically, the heater control unit 112 adjusts the power supplied to the plurality of heaters 21 so that the temperatures detected by the plurality of temperature sensors 40 approach the target value.

  Next, the control part 100 performs step S02. In step S <b> 02, the transfer arm A <b> 3 and the lifting mechanism 50 place the wafer W on the hot plate 20 in accordance with control by the wafer transfer control unit 113. The wafer W placed on the hot plate 20 is heated by heat transfer from the heater 21. That is, step S02 includes heating the wafer W on the hot plate 20 by the heater 21.

  Next, the control unit 100 executes steps S03 and S04. In step S <b> 03, the temperature acquisition unit 111 acquires the temperatures detected by the plurality of temperature sensors 40 and stores them in the data storage unit 121. In step S04, the heater control unit 112 controls the heater 21 based on the temperature acquired by the temperature acquisition unit 111. Specifically, the temperature acquisition unit 111 adjusts the power supplied to the plurality of heaters 21 so that the temperatures detected by the plurality of temperature sensors 40 approach the target value.

Ｘ，Ｙ：直交座標系における温度重心の位置
ｘｉ，ｙｉ：直交座標系における前記温度センサの位置
Ｔｉ：前記温度センサにより検出された温度
ｎ：前記温度センサの数 Next, the control part 100 performs step S05, S06. In step S <b> 05, the center of gravity calculation unit 114 calculates the position of the temperature center of gravity, and stores the calculation result in the data storage unit 121. The position of the temperature center of gravity can be calculated as a weighted average value of coordinates when temperature is used as a weight. For example, the centroid calculating unit 114 calculates the position of the temperature centroid in a plane parallel to the wafer W as the first centroid position. The first barycentric position can be calculated by the following equation.

X, Y: position of the temperature center of gravity in the Cartesian coordinate system xi, yi: position of the temperature sensor in the Cartesian coordinate system Ti: temperature detected by the temperature sensor n: number of the temperature sensors

  In step S <b> 06, the difference calculation unit 115 acquires the position of the temperature center of gravity stored in the data storage unit 121, calculates the difference between the position of the temperature center of gravity and the reference position, and stores the calculation result in the data storage unit 121. As described above, the reference position is determined based on the position of the temperature center of gravity when the wafer W is normally heat-treated, for example.

  As a specific example of the reference position, an average value of the positions of the temperature centroids calculated in a plurality of past normal heat treatments can be given. The reference position is recorded in advance in the data storage unit 121, for example. The reference position may be calculated by the difference calculation unit 115 or the like prior to step S06. That is, the control unit 100 may be configured to further execute the calculation of the reference position. The substrate heat treatment method may further include calculating a reference position.

  Next, the control part 100 performs step S07. In step S07, the heat treatment state detection unit 116 detects the heat treatment state of the wafer W based on the position of the temperature center of gravity. One example of detecting the heat treatment state is detecting whether the heat treatment state is normal or abnormal. For example, when the difference between the position of the temperature center of gravity and the reference position is within an allowable range, the heat treatment state detection unit 116 detects that the heat treatment state of the wafer W is normal, and the temperature center of gravity position and the reference position are detected. When the difference is outside the allowable range, it is detected that the heat treatment state of the wafer W is abnormal.

  As a specific example of the allowable range, there is a standard deviation of the position of the temperature center of gravity calculated in a plurality of past normal heat treatments. The allowable range may be obtained by multiplying the standard deviation by a predetermined magnification (for example, 3 times). For example, the allowable range is recorded in advance in the data storage unit 121. The allowable range may be calculated by the heat treatment state detection unit 116 or the like prior to step S07. That is, the control unit 100 may be configured to further execute calculation of the allowable range. The substrate heat treatment method may further include calculating an allowable range.

  When it is detected in step S07 that the heat treatment state is normal, the control unit 100 executes step S08. In step S08, the wafer transfer control unit 113 detects whether a set time has elapsed since the start of heating of the wafer W. If it is detected in step S08 that the set time has not yet elapsed, the control unit 100 returns the process to step S03. When it is detected in step S08 that the set time has elapsed, the control unit 100 executes step S09. In step S <b> 09, the transfer arm A <b> 3 and the lifting mechanism 50 transfer the wafer W from above the hot plate 20 in accordance with the control by the wafer transfer control unit 113. Thus, normal heat treatment of the wafer W is completed.

  When it is detected in step S07 that the heat treatment state is abnormal, the control unit 100 executes steps S10 and S11. In step S10, the abnormality notification unit 117 outputs information for notifying abnormality of the heat treatment state to the display unit 122, and the display unit 122 outputs the information as a display image. In step S11, the position information output unit 118 outputs information about the position of the temperature center of gravity to the display unit 122, and the display unit 122 outputs the information as a display image.

  As an example, the position information output unit 118 outputs trajectory information of the difference between the position of the temperature center of gravity and the reference position based on the data accumulated in the data storage unit 121 by repeating steps S03 to S08, and the display unit 122 Outputs the information as a graph. The trajectory information means a temporal change in position (including position difference). The position information accumulated in the data storage unit 121 by repeating steps S03 to S08 arranged in time series also corresponds to the trajectory information.

  After executing Steps S10 and S11, the control unit 100 ends the heat treatment.

  The heat treatment unit U2 described above includes a hot plate 20 for placing the wafer W, a heater 21 for heating the wafer W on the placement portion, and a plurality of locations on the wafer W on the hot plate 20, respectively. A plurality of temperature sensors 40 arranged to correspond to each other and a control unit 100 are provided. The control unit 100 controls the heater 21 based on the temperatures detected by the plurality of temperature sensors 40, and the position of the temperature center of gravity corresponding to the center of gravity when the temperatures detected by the plurality of temperature sensors 40 are regarded as masses. , And detecting the heat treatment state of the wafer W based on the position of the temperature center of gravity.

  According to the heat treatment unit U2, the heat treatment state of the wafer W is detected based on the position of the temperature center of gravity. The heat treatment state of the wafer W is not only abnormal in the entire wafer W, but may also be abnormal in a limited manner in a part of the wafer W (hereinafter referred to as “partial abnormality in the heat treatment state”). As a factor causing a partial abnormality in the heat treatment state, a part of the wafer W is separated from the hot plate 20 as compared with a normal mounting state (hereinafter referred to as “floating of the wafer W”). .). The lift of the wafer W can be caused by, for example, climbing on a minute particle or warping of the wafer W. As illustrated below, the position of the temperature center of gravity fluctuates with high sensitivity in accordance with a partial abnormality in the heat treatment state.

  FIG. 7A is a graph showing the change over time of the temperature detected by the temperature sensor 40 when the heating of the wafer W is normally executed by the hot plate 20 illustrated in FIG. FIG. 7B shows a change with time of the temperature detected by the temperature sensor 40 when heating is performed in a state where the wafer W is lifted on the upper side of the hot plate 20 illustrated in FIG. It is a graph. 7A and 7B, the detection value by each temperature sensor 40 changes so as to gradually approach the set temperature after the temperature has decreased after the start of heating. The temperature drop after the start of heating is due to the heat of the heater 21 being absorbed by the wafer W side. The reason why the lowered temperature is restored to the set temperature side is that the heater 21 is controlled based on the value detected by the temperature sensor 40.

  FIG. 8A is a graph showing the locus of the position of the temperature center of gravity calculated using the temperature shown in FIG. FIG. 8B is a graph showing the locus of the position of the temperature center of gravity calculated using the temperature shown in FIG. 8A and 8B coincides with the upper, lower, left and right of FIG. In FIG. 8 (b), the position of the temperature center of gravity has greatly fluctuated upward compared to FIG. 8 (a). This is considered to be due to the fact that the lowering of the temperature accompanying the placement of the wafer W becomes smaller on the upper side of the drawing because the wafer W is lifted on the upper side of the drawing.

  As illustrated in FIG. 8, the position of the temperature centroid varies with high sensitivity according to a partial abnormality in the heat treatment state. For this reason, the partial abnormality of the heat treatment state can be detected with high sensitivity based on the position of the temperature center of gravity. Therefore, it is possible to more reliably detect abnormality in the heat treatment state.

  In addition to calculating the position of the temperature centroid in the plane parallel to the wafer W as the first centroid position, the control unit 100 determines the position of the temperature centroid in the radial direction orthogonal to the center of the wafer W as the second centroid. The position may be further calculated, and the heat treatment state of the wafer W may be detected based on the first and second center of gravity positions.

5 is divided into three regions 20a, 20b, and 20c that are concentric with the wafer W and are arranged in the radial direction. Since the region 20b is divided into two regions arranged in the declination direction (circumferential direction), two temperature sensors 40 are disposed in the region 20b. Since the region 20c is divided into four regions arranged in the declination direction, four temperature sensors 40 are arranged in the region 20c. In such a case, the temperature Ta detected by the temperature sensor 40 in the region 20a is regarded as the mass of the region 20a, the average value Tb of the temperatures detected by the two temperature sensors 40 in the region 20b is regarded as the mass of the region 20b, The average value Tc of the temperatures detected by the four temperature sensors 40 in the region 20c is regarded as the mass of the region 20c, and the second centroid position can be calculated by the following equation.
R = (ra · Ta + rb · Tb + rc · Tc) / (Ta + Tb + Tc)
R: second gravity center position ra: position of the region 20a in the radial direction (distance from the center of the wafer W to the region 20a)
rb: position of the region 20b in the radial direction (distance from the center of the wafer W to the region 20b)
rc: position of the region 20c in the radial direction (distance from the center of the wafer W to the region 20c)
Ta: Temperature detected by the temperature sensor 40 in the region 20a Tb: Average value of the temperatures detected by the two temperature sensors 40 in the region 20b Tb: Average value of the temperatures detected by the four temperature sensors 40 in the region 20c

  The first barycentric position fluctuates with good sensitivity according to a partial abnormality in the heat treatment state, but hardly changes for an abnormality in which the temperature distribution is point-symmetric with respect to the center of the wafer W. Specific examples of such an abnormality include a case where the center portion of the wafer W is lifted up on the particle, and a case where the entire peripheral portion of the wafer W is lifted uniformly due to the warpage of the wafer W. .

  On the other hand, the second center-of-gravity position varies according to the temperature distribution along the radial direction of the wafer W. FIG. 9 is a graph illustrating the locus of the second barycentric position during the heat treatment. The r-axis in the figure is the radius of the polar coordinate system centered on the wafer W, FP is the locus of the second center of gravity, and O1 is the intermediate position between the center and the periphery of the wafer W. FIG. 9A illustrates a case where the center portion of the wafer W is lifted. In this case, the trajectory FP greatly swings toward the center of the wafer W with respect to the intermediate position O1. FIG. 9B illustrates a case where the peripheral edge of the wafer W is lifted. In this case, the trajectory FP greatly swings toward the peripheral side of the wafer W with respect to the intermediate position O1. As described above, the second barycentric position fluctuates with high sensitivity even when the temperature distribution is point-symmetric with respect to the center of the wafer W. Therefore, by detecting the heat treatment state of the substrate based on both the first and second center-of-gravity positions, an abnormality in the heat treatment state can be detected more reliably.

  As described above, the control unit 100 may calculate the second center-of-gravity position by regarding the average value of the temperatures detected by the plurality of temperature sensors 40 at the same position in the radial direction as the mass of the position. Good. The control unit 100 regards the average value of the temperatures detected by the temperature sensor in each of the plurality of regions 20a, 20b, and 20c that are concentric with the wafer W and aligned in the radial direction as the mass of the second region. May be calculated. In these cases, the second centroid position can be calculated with higher accuracy.

  The control unit 100 uses the reference position determined based on the position of the temperature centroid when the wafer W is normally heated, and determines the heat treatment state of the wafer W based on the difference between the position of the temperature centroid and the reference position. It is configured to detect. For this reason, the heat treatment state of the wafer W is detected based on the component deviating from the reference position among the positions of the temperature center of gravity. Based on the component deviating from the reference position, it is possible to simplify the criterion for determining whether the heat treatment state is normal or abnormal.

  Note that the control unit 100 only needs to be configured to detect the heat treatment state based on the position of the temperature center of gravity, and therefore it is not essential to be configured to use the reference position.

  The control unit 100 uses the average value of the position of the temperature center of gravity calculated in a plurality of times of normal heating as a reference position, and the tolerance determined based on the standard deviation of the position of the temperature center of gravity calculated in the times of normal heating. The range is further used to detect that the heat treatment state of the wafer W is abnormal when the difference between the position of the temperature gravity center and the reference position is outside the allowable range.

  FIG. 10 is a graph showing the trajectory of the difference between the position of the temperature center of gravity shown in FIG. 8B and the reference position. A one-dot chain line in FIG. 9 indicates an allowable range. When the locus in FIG. 9 goes out of the dashed line, it is detected that the heat treatment state of the wafer W is abnormal. As described above, the abnormality of the heat treatment state can be detected based on a simple criterion whether or not the position of the temperature gravity center is within the allowable range. Further, by using the average value as a reference position and using an allowable range determined based on the standard deviation, it is possible to allow appropriate variation and reduce unnecessary abnormality detection.

  Regarding the second center of gravity position, when the difference from the reference position is outside the allowable range, it may be detected that the heat treatment state of the wafer W is abnormal. Dotted lines LL1 and LL2 in FIG. 9 illustrate the allowable range of the second reference position.

  In addition, since the control part 100 should just be comprised so that the heat processing state may be detected based on the position of a temperature gravity center, the specific method of detecting the heat processing state based on the position of a temperature gravity center is limited to what was mentioned above. Not.

  The control unit 100 is configured to further execute outputting information related to the position of the temperature gravity center. Based on the position of the temperature center of gravity, it is also possible to grasp in which direction the abnormality of the heat treatment state has occurred. For this reason, by outputting information on the position of the temperature center of gravity, it is possible to provide information useful for specifying the position that caused the abnormality in the heat treatment state.

  Note that since the control unit 100 only needs to be configured to detect the heat treatment state, it is not essential to be configured to output information regarding the position of the temperature center of gravity.

  The control unit 100 is configured to output trajectory information of the difference between the position of the temperature center of gravity and the reference position as an example of information regarding the position of the temperature center of gravity. For this reason, the locus information of the component deviated from the reference position among the positions of the temperature gravity center is output. According to the locus information of the component deviating from the reference position, it is possible to more easily grasp in which direction the abnormality of the heat treatment state has occurred. Therefore, it is possible to provide more useful information for specifying the position that has caused the abnormality in the heat treatment state. For example, based on FIG. 9, it can be estimated that the wafer W is lifted on the upper side in FIG.

  The control unit 100 may be configured to output the trajectory information on the position of the temperature center of gravity and the trajectory information on the reference position as information relating to the position of the temperature center of gravity, or when an abnormality has occurred. Information indicating the estimated orientation may be output. The control unit 100 may be configured to output only the trajectory information of the temperature centroid position itself as information on the position of the temperature centroid.

  The heater 21 may be controllable for each of a plurality of processing regions (regions 20a, 20b, 20c) arranged along the wafer W, and the control unit 100 has insufficient heat treatment based on the position of the temperature center of gravity. It may be configured to further execute specifying the processing region and controlling the heat treatment unit so as to promote the heat treatment of the processing region. In this case, the heat treatment reliability can be improved by performing the heat treatment according to the position information of the temperature center of gravity. With reference to FIG. 11, a specific example of the heat treatment procedure including promoting the heat treatment of the treatment region where the heat treatment is insufficient will be described.

  In the heat treatment procedure shown in FIG. 11, when it is detected in step S07 that the heat treatment state is abnormal, the control unit 100 executes step S20. In step S20, the heater control unit 112 confirms whether the abnormality in the heat treatment state is within an adjustable range. For example, the heater control unit 112 checks whether or not the temperature in the processing region where heat treatment is insufficient is within an adjustable range. The adjustable range is a range that can be returned to the allowable range by adjusting the output of the heater 21, and can be set in advance based on experiments.

  When it is determined in step S20 that the abnormality in the heat treatment state is within the adjustable range, the control unit 100 executes step S21. In step S <b> 21, the heater control unit 112 controls the heater 21 so as to promote the heat treatment in the treatment region where the heat treatment is insufficient. For example, the heater control unit 112 increases the output of the heater 21 in a processing region where heat treatment is insufficient. Then, the control part 100 advances a process to step S08.

  If it is determined in step S20 that the abnormality in the heat treatment state is not within the adjustable range, the control unit 100 executes steps S22 and S23 in the same manner as steps S10 and S11, and then ends the process.

  Although the embodiment has been described above, the present invention is not necessarily limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention. For example, the heat treatment unit for heating the wafer W on the mounting unit is not limited to the heater 21 described above, and may be an infrared light source configured to radiatively heat the wafer W or the like. The heat treatment part is not limited to one intended for heating. For example, the heat treatment unit may be a cooler that cools the wafer W. The target of the heat treatment is not limited to a semiconductor wafer, and may be, for example, a glass substrate, a mask substrate, or an FPD (Flat Panel Display).

  DESCRIPTION OF SYMBOLS 20 ... Hot plate (mounting part), 21 ... Heater (heat treatment part), 40 ... Temperature sensor, 100 ... Control part, U2 ... Heat treatment unit (substrate heat treatment apparatus), W ... Wafer (substrate).

Claims (22)

A placement unit for placing the substrate;
A heat treatment part for heating or cooling the substrate on the placement part,
A plurality of temperature sensors arranged to respectively correspond to a plurality of locations of the substrate on the mounting portion;
Controlling the heat treatment unit based on the temperatures detected by the plurality of temperature sensors, and calculating the position of the temperature centroid corresponding to the centroid when the temperatures detected by the plurality of temperature sensors are regarded as masses. A control unit configured to detect a heat treatment state of the substrate based on the position of the temperature center of gravity, and
The control unit calculates the position of the temperature centroid in a plane parallel to the substrate as a first centroid position, and sets the position of the temperature centroid in the radial direction orthogonal to the center of the substrate as a second centroid position. calculated as the first and second substrate heat treatment apparatus you detect the heat treatment state of the substrate based on the center-of-gravity position. Wherein the control unit calculates the second center of gravity a plurality of the average of the temperature detected by the temperature sensor is regarded as the mass of the position that is equal to each other position in the radial direction, of claim 1, wherein Substrate heat treatment equipment. The control unit calculates the second center-of-gravity position by regarding an average value of temperatures detected by the temperature sensor in each of a plurality of regions arranged concentrically with the substrate and arranged in the radial direction as a mass of the region. The substrate heat treatment apparatus according to claim 1 . The control unit uses a reference position determined based on the position of the temperature centroid when the substrate is normally heat-treated, and based on a difference between the position of the temperature centroid and the reference position, and it is configured to sense the heat treatment conditions, the substrate heat treatment apparatus of any one of claims 1-3. A placement unit for placing the substrate;
A heat treatment part for heating or cooling the substrate on the placement part,
A plurality of temperature sensors arranged to respectively correspond to a plurality of locations of the substrate on the mounting portion;
Controlling the heat treatment unit based on the temperatures detected by the plurality of temperature sensors, and calculating the position of the temperature centroid corresponding to the centroid when the temperatures detected by the plurality of temperature sensors are regarded as masses. A control unit configured to detect a heat treatment state of the substrate based on the position of the temperature center of gravity, and
The control unit uses a reference position determined based on the position of the temperature centroid when the substrate is normally heat-treated, and based on a difference between the position of the temperature centroid and the reference position, The temperature center of gravity calculated in a plurality of normal heat treatments is configured to detect a heat treatment state, using an average value of the position of the temperature center of gravity calculated in a plurality of normal heat treatments as the reference position. Further, an allowable range determined based on a standard deviation of the position of the substrate is further used, and when the difference between the position of the temperature center of gravity and the reference position is outside the allowable range, it is detected that the heat treatment state of the substrate is abnormal. board thermal processing apparatus that is configured. Wherein the control unit is configured is configured to further execute to output the information about the position of the temperature centroid, a substrate heat treatment apparatus of any one of claims 1-5. A placement unit for placing the substrate;
A heat treatment part for heating or cooling the substrate on the placement part,
A plurality of temperature sensors arranged to respectively correspond to a plurality of locations of the substrate on the mounting portion;
Controlling the heat treatment unit based on the temperatures detected by the plurality of temperature sensors, and calculating the position of the temperature centroid corresponding to the centroid when the temperatures detected by the plurality of temperature sensors are regarded as masses. A control unit configured to detect a heat treatment state of the substrate based on the position of the temperature center of gravity, and
The control unit uses a reference position determined based on the position of the temperature centroid when the substrate is normally heat-treated, and based on a difference between the position of the temperature centroid and the reference position, is configured to sense the heat treatment conditions, the temperature centroid position and the reference position and configured to have that board heat treatment apparatus to further perform the outputting the trace information of the difference between the. The heat treatment part can be controlled for each of a plurality of processing regions arranged along the substrate,
The control unit is configured to further execute specifying the processing region with insufficient heat treatment based on the position of the temperature center of gravity and controlling the heat treatment unit to promote the heat treatment of the processing region. is, the substrate heat treatment apparatus of any one of claims 1-7. Wherein the control unit calculates the position of the temperature centroid by the equation (1) and (2), the substrate heat treatment apparatus of any one of claims 1-8.

X, Y: position of the temperature centroid in the Cartesian coordinate system xi, yi: position of the temperature sensor in the Cartesian coordinate system Ti: temperature detected by the temperature sensor n: number of the temperature sensors Placing the substrate on the placement section;
Heating or cooling the substrate on the placement unit by a heat treatment unit;
Detecting temperature by a plurality of temperature sensors arranged to correspond to a plurality of locations of the substrate on the placement unit,
Controlling the heat treatment unit based on temperatures detected by the plurality of temperature sensors;
Calculating the position of the temperature center of gravity corresponding to the center of gravity when the temperatures detected by the plurality of temperature sensors are regarded as masses;
Based on the position of the temperature centroid, sensing the heat treatment conditions of the substrate, only including,
The position of the temperature centroid in a plane parallel to the substrate is calculated as a first centroid position, the position of the temperature centroid in the radial direction orthogonal to the center of the substrate is calculated as a second centroid position, A substrate heat treatment method for detecting a heat treatment state of the substrate based on first and second center-of-gravity positions . The substrate heat treatment method according to claim 10 , wherein the second center-of-gravity position is calculated by regarding an average value of temperatures detected by a plurality of temperature sensors located at equal positions in the radial direction as a mass of the position. Wherein the average value of the temperature detected by the temperature sensor, and calculates the second center of gravity is regarded as the mass of the region in each of a plurality of areas arranged in the radial direction in the substrate and concentric claim 10 The substrate heat treatment method described. A reference position determined based on the position of the temperature centroid when the substrate is normally heat-treated is used, and a heat treatment state of the substrate is detected based on a difference between the position of the temperature centroid and the reference position. The substrate heat treatment method according to any one of claims 10 to 12 . Placing the substrate on the placement section;
Heating or cooling the substrate on the placement unit by a heat treatment unit;
Detecting temperature by a plurality of temperature sensors arranged to correspond to a plurality of locations of the substrate on the placement unit,
Controlling the heat treatment unit based on temperatures detected by the plurality of temperature sensors;
Calculating the position of the temperature center of gravity corresponding to the center of gravity when the temperatures detected by the plurality of temperature sensors are regarded as masses;
Detecting a heat treatment state of the substrate based on the position of the temperature center of gravity,
Using the reference position determined based on the position of the temperature centroid when the substrate is normally heat-treated, the heat treatment state of the substrate is detected based on the difference between the position of the temperature centroid and the reference position. ,
Using an average value of the position of the temperature center of gravity calculated in a plurality of normal heat treatments as the reference position, an allowable range determined based on a standard deviation of the position of the temperature center of gravity calculated in a plurality of normal heat treatments further used, when the difference between the reference position and the position of the temperature centroid is outside the allowable range, to that board heat treatment method detects that the heat treatment conditions of the substrate is abnormal. The substrate heat treatment method according to claim 10 , further comprising outputting information on the position of the temperature center of gravity. Placing the substrate on the placement section;
Heating or cooling the substrate on the placement unit by a heat treatment unit;
Detecting temperature by a plurality of temperature sensors arranged to correspond to a plurality of locations of the substrate on the placement unit,
Controlling the heat treatment unit based on temperatures detected by the plurality of temperature sensors;
Calculating the position of the temperature center of gravity corresponding to the center of gravity when the temperatures detected by the plurality of temperature sensors are regarded as masses;
Detecting a heat treatment state of the substrate based on the position of the temperature center of gravity,
Using the reference position determined based on the position of the temperature centroid when the substrate is normally heat-treated, the heat treatment state of the substrate is detected based on the difference between the position of the temperature centroid and the reference position. ,
Further including board heat treatment method that outputs the difference locus information of the reference position and the position of the temperature centroid. The substrate heat treatment method according to any one of claims 10 to 16 , further comprising: specifying a treatment region in which heat treatment is insufficient based on the position of the temperature centroid, and promoting heat treatment of the treatment region. The substrate heat treatment method according to any one of claims 10 to 17 , wherein the position of the temperature center of gravity is calculated by the equations (1) and (2).

X, Y: position of the temperature centroid in the Cartesian coordinate system xi, yi: position of the temperature sensor in the Cartesian coordinate system Ti: temperature detected by the temperature sensor n: number of the temperature sensors A computer-readable recording medium having recorded thereon a program for causing the apparatus to execute the substrate heat treatment method according to claim 10 . Acquiring temperatures detected by a plurality of temperature sensors arranged so as to correspond to a plurality of locations of the substrate to be heat-treated on the mounting portion, corresponding to the center of gravity when the temperature is regarded as mass Calculating the position of the temperature centroid, detecting the heat treatment state of the substrate based on the position of the temperature centroid , and
The position of the temperature centroid in a plane parallel to the substrate is calculated as a first centroid position, the position of the temperature centroid in the radial direction orthogonal to the center of the substrate is calculated as a second centroid position, A heat treatment state detection device for detecting a heat treatment state of the substrate based on first and second center-of-gravity positions . Acquiring temperatures detected by a plurality of temperature sensors arranged so as to correspond to a plurality of locations of the substrate to be heat-treated on the mounting portion, corresponding to the center of gravity when the temperature is regarded as mass Calculating the position of the temperature centroid, detecting the heat treatment state of the substrate based on the position of the temperature centroid, and
A reference position determined based on the position of the temperature centroid when the substrate is normally heat-treated is used, and a heat treatment state of the substrate is detected based on a difference between the position of the temperature centroid and the reference position. Is configured as
Using an average value of the position of the temperature center of gravity calculated in a plurality of normal heat treatments as the reference position, an allowable range determined based on a standard deviation of the position of the temperature center of gravity calculated in a plurality of normal heat treatments Further, a heat treatment state detection apparatus configured to detect that the heat treatment state of the substrate is abnormal when the difference between the position of the temperature center of gravity and the reference position is outside the allowable range. Acquiring temperatures detected by a plurality of temperature sensors arranged so as to correspond to a plurality of locations of the substrate to be heat-treated on the mounting portion, corresponding to the center of gravity when the temperature is regarded as mass Calculating the position of the temperature centroid, detecting the heat treatment state of the substrate based on the position of the temperature centroid, and
A reference position determined based on the position of the temperature centroid when the substrate is normally heat-treated is used, and a heat treatment state of the substrate is detected based on a difference between the position of the temperature centroid and the reference position. Is configured as
A heat treatment state detection device configured to further execute output of trajectory information of a difference between the position of the temperature center of gravity and the reference position.

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