JP7093693B2 - Heat treatment equipment and substrate slip detection method - Google Patents

Description

The present disclosure relates to a heat treatment apparatus and a substrate slip detection method.

Patent Document 1 discloses a heat treatment apparatus having a configuration for determining whether or not a substrate is on a foreign substance on a heating plate for heating the substrate. In this heat treatment apparatus, a plurality of heaters are provided on the heating plate so as to be separated from each other in the horizontal direction, and temperature sensors are arranged so as to correspond to these heaters. After the substrate is placed on the heating plate set to the set temperature, the temperature measured value of the temperature sensor measured from the time when the temperature of the heating plate is absorbed by the substrate and starts to decrease until it returns to the above set temperature. The standard deviation is calculated for. Based on the comparison result between this standard deviation and the preset threshold value, it is determined whether or not the substrate is on the foreign matter on the heating plate.

Japanese Unexamined Patent Publication No. 2012-151247

The technique according to the present disclosure detects the presence or absence of slippage of the substrate when the substrate is placed on a hot plate.

One aspect of the present disclosure is a heat treatment apparatus for heat-treating a substrate, which has a hot plate on which the substrate is placed to heat the substrate, and the hot plate has an outer peripheral portion excluding a central portion of the hot plate. It is divided into a plurality of regions including the outer peripheral division region divided in the circumferential direction, and the temperature is set for each of the regions, and the heat treatment apparatus is further provided in each of the outer peripheral division regions of the hot plate. The substrate is based on a temperature measuring unit that measures the temperature of the outer peripheral division region and a drop in temperature from the set temperature measured by the temperature measuring unit when the substrate is placed on the hot plate. A slip estimation unit that estimates the presence or absence of slippage of the substrate when it is placed on the hot plate, another temperature measurement unit that measures the temperature of the central portion of the hot plate, and a substrate mounting surface of the hot plate. The transfer section that moves in the direction intersecting with the hot plate and transfers the substrate to and from the hot plate, the drive unit that drives the transfer section, the high-speed range that moves the transfer section at high speed, and the transfer section at low speed. It has a speed range setting unit for setting a low speed range to be moved by, and the speed range setting unit is based on a change in temperature of only the central portion of the hot plate when the substrate is placed. , The high speed range and the low speed range are set .

According to the present disclosure, it is possible to detect the presence or absence of slippage of the substrate when the substrate is placed on the hot plate.

It is a top view schematically showing the outline of the structure of the substrate processing system which concerns on 1st Embodiment. It is a side view which shows the outline of the internal structure of the substrate processing system which concerns on 1st Embodiment. It is a side view which shows the outline of the internal structure of the substrate processing system which concerns on 1st Embodiment. It is explanatory drawing of the vertical section which shows the outline of the structure of the heat treatment apparatus. It is explanatory drawing of the cross section which shows the outline of the structure of the heat treatment apparatus. It is explanatory drawing of the plane which shows the outline of the structure of the hot plate of a heat treatment apparatus. It is explanatory drawing of the plane which shows the outline of the structure of the transfer arm. It is explanatory drawing of the side which shows the outline of the structure of the detection part. It is a block diagram schematically showing the outline of the structure of the control part which concerns on 1st Embodiment. It is explanatory drawing of the estimation method in the slip estimation part, and shows the state in which a substrate slipped. It is explanatory drawing of the estimation method in the slip estimation part, and shows the state which the substrate did not slip. It is explanatory drawing of the estimation method in the slip estimation part, and shows the state which the substrate slipped in the opposite direction. It is a figure which shows the time change of the temperature of the region in a hot plate for demonstrating the estimation method in a slip estimation part. It is a figure which shows the time change of the temperature of another region in a hot plate for demonstrating the estimation method in a slip estimation part. It is explanatory drawing which shows the example of a plurality of directions set with respect to a hot plate. It is a figure which shows an example of the slip direction estimation table. It is a block diagram schematically showing the outline of the structure of the control part which concerns on 2nd Embodiment. It is explanatory drawing of the position of the high-speed region and the low-speed region with respect to the moving section of a lifting pin. It is a figure which shows the positional relationship between a low speed region and a hot plate surface when the position of a low speed region is inappropriate. It is a figure which shows the temperature change of a hot plate when the position of a low speed region is inappropriate.

First, the conventional heat treatment apparatus described in Patent Document 1 will be described.
In the photolithography process in the manufacturing process of semiconductor devices and the like, various processes are performed to form a predetermined resist pattern on a semiconductor wafer as a substrate (hereinafter referred to as "wafer"). The various processes include a process of applying a resist solution on the wafer W to form a resist film, a process of exposing the resist film, and a process of heating the wafer after exposure to promote a chemical reaction in the resist film (PEB (Post Exposure Bake). ) Processing), processing to develop the exposed resist film, and the like.

The heat treatment such as the PEB treatment described above is usually performed by a heat treatment apparatus having a hot plate on which a wafer is placed and which heats the wafer. For example, the hot plate of the heat treatment apparatus has a built-in heater that generates heat by feeding power, and the hot plate is adjusted to a predetermined temperature by the heat generated by the heater.

The heat treatment temperature in the heat treatment has a great influence on the line width of the resist pattern finally formed on the wafer. Therefore, in order to strictly adjust the temperature inside the wafer surface during heating, the hot plate of the above-mentioned heat treatment apparatus is divided into a plurality of regions, and an independent heater and a temperature sensor for each region are built in, and each region has its own heat plate. The temperature is adjusted.

If the processing temperature of each region of the hot plate is the same, the temperature in the wafer surface on the hot plate varies due to, for example, the difference in thermal resistance of each region of the hot plate, and as a result, the lines of the resist pattern are used. The width may vary. Therefore, the processing temperature is set individually in each region of the hot plate.

Further, during the heat treatment, the wafer is placed on the hot plate by the operation of the elevating pin provided on the hot plate so as to be able to move up and down, and by the operation with the transfer arm. For example, when the elevating pin is raised, the wafer is transferred from the transfer arm of the substrate transfer device inserted into the heat treatment device from the outside to the elevating pin, and then the transfer arm is retracted and then the elevating pin is lowered. As a result, the wafer is transferred from the elevating pin to the hot plate.

In order to shorten the time required for processing in the heat treatment apparatus, it is preferable to raise and lower the elevating pin at high speed. However, if the elevating pin is lowered at high speed, the wafer may slip on the hot plate when the wafer is transferred from the elevating pin to the hot plate. Therefore, the moving section of the elevating pin is provided with a section that operates at high speed and a section that operates at low speed.

However, due to changes in the wafer used and changes over time in mechanical parts such as the cylinder that drives the elevating pin, the section in which the elevating pin operates at low speed shifts with respect to the position of the hot plate in the elevating direction of the elevating pin. There is. As a result, the moving speed of the elevating pin does not become slow but remains high when the wafer is transferred from the elevating pin to the hot plate, and the wafer slides on the hot plate when the wafer is placed on the hot plate. There is.

When such slippage occurs, the temperature of any part of the wafer deviates greatly from the target temperature, which may adversely affect the line width of the resist pattern finally formed on the wafer. In addition, there is a concern that the substrate may be impacted more than expected because it is considered that slipping occurs because the speed or acceleration when the substrate is placed on the hot plate is larger than expected, so additional functions are available. May be required. The additional functions are, for example, a function of preventing the substrate to be delivered after the heat treatment from falling in the member to be delivered at the time of carrying out, and a function of alignment for the next processing.
Therefore, it is important to detect the presence or absence of slippage of the wafer on the hot plate when it is placed on the hot plate.

The heat treatment apparatus of Patent Document 1 determines whether or not the substrate is on a foreign substance on the heating plate that heats the substrate, but does not detect slippage of the wafer.

Hereinafter, the heat treatment apparatus and the substrate slip detection method according to the present embodiment, which detect the presence or absence of slippage of the substrate when the substrate is placed on the hot plate, will be described with reference to the drawings. In the present specification and the drawings, elements having substantially the same functional configuration are designated by the same reference numerals, so that duplicate description will be omitted.

(First Embodiment)
FIG. 1 is a plan view showing an outline of the configuration of the substrate processing system 1 provided with the heat treatment apparatus according to the first embodiment. 2 and 3 are a front view and a rear view schematically showing an outline of the internal configuration of the substrate processing system 1, respectively. In this embodiment, a case where the substrate processing system 1 is a coating development processing system that performs coating development processing on the wafer W will be described as an example.

As shown in FIG. 1, the substrate processing system 1 includes a cassette station 10 in which a cassette C accommodating a plurality of wafers W is carried in and out, and a processing station including a plurality of various processing devices for performing predetermined processing on the wafer W. 11 and. The substrate processing system 1 has a configuration in which the cassette station 10, the processing station 11, and the interface station 13 that transfers the wafer W between the exposure apparatus 12 adjacent to the processing station 11 are integrally connected. is doing.

The cassette station 10 is provided with a cassette mounting table 20. The cassette mounting table 20 is provided with a plurality of cassette mounting plates 21 on which the cassette C is mounted when the cassette C is carried in and out of the substrate processing system 1.

The cassette station 10 is provided with a wafer transfer device 23 that is movable on a transfer path 22 extending in the X direction. The wafer transfer device 23 is movable in the vertical direction and around the vertical axis (θ direction), and is a transfer device for the cassette C on each cassette mounting plate 21 and the third block G3 of the processing station 11 described later. The wafer W can be transferred between the two.

The processing station 11 is provided with a plurality of, for example, four blocks G1, G2, G3, and G4 equipped with various devices. For example, a first block G1 is provided on the front side of the processing station 11 (negative direction side in the X direction in FIG. 1), and a second block G1 is provided on the back side of the processing station 11 (positive direction side in the X direction in FIG. 1). Block G2 is provided. A third block G3 is provided on the cassette station 10 side of the processing station 11 (negative direction side in the Y direction in FIG. 1), and is provided on the interface station 13 side of the processing station 11 (positive direction side in the Y direction in FIG. 1). Is provided with a fourth block G4.

As shown in FIG. 2, a plurality of liquid processing devices, for example, a developing processing device 30, a lower antireflection film forming device 31, a resist coating device 32, and an upper antireflection film forming device 33 are included in the first block G1 from below. They are arranged in order. The developing processing apparatus 30 develops the wafer W, and the lower antireflection film forming apparatus 31 forms an antireflection film (hereinafter referred to as “lower antireflection film”) under the resist film of the wafer W. Is. The resist coating device 32 applies a resist solution to the wafer W to form a resist film, and the upper antireflection film forming device 33 has an antireflection film (hereinafter, “upper antireflection”) on the upper layer of the resist film of the wafer W. It forms a film).

For example, the development processing device 30, the lower antireflection film forming device 31, the resist coating device 32, and the upper antireflection film forming device 33 are arranged side by side in the horizontal direction. The number and arrangement of the development processing device 30, the lower antireflection film forming device 31, the resist coating device 32, and the upper antireflection film forming device 33 can be arbitrarily selected.

In these developing processing devices 30, the lower antireflection film forming device 31, the resist coating device 32, and the upper antireflection film forming device 33, for example, spin coating is performed by applying a predetermined coating liquid onto the wafer W. In spin coating, for example, the coating liquid is discharged onto the wafer W from the coating nozzle, and the wafer W is rotated to diffuse the coating liquid onto the surface of the wafer W.

As shown in FIG. 3, the second block G2 includes a heat treatment apparatus 40 that performs heat treatment such as heating and cooling of the wafer W, an adhesion apparatus 41 for improving the fixability between the resist liquid and the wafer W, and the outer periphery of the wafer W. A peripheral exposure device 42 for exposing a portion is provided. The heat treatment apparatus 40, the adhesion apparatus 41, and the peripheral exposure apparatus 42 are provided side by side in the vertical direction and the horizontal direction, and the number and arrangement thereof can be arbitrarily selected.

For example, the third block G3 is provided with a plurality of delivery devices 50, 51, 52, 53, 54, 55, 56 in order from the bottom. Further, the fourth block G4 is provided with a plurality of delivery devices 60, 61, 62 and an inspection device 63 as a substrate inspection device in order from the bottom. The configuration of the inspection device 63 will be described later.

As shown in FIG. 1, a wafer transfer region D is formed in a region surrounded by the first block G1 to the fourth block G4. A wafer transfer device 70 as a substrate transfer device is arranged in the wafer transfer area D.

The wafer transfer device 70 has, for example, a transfer arm 70a that can move in the Y direction, the X direction, the θ direction, and the vertical direction. The wafer transfer device 70 moves in the wafer transfer area D and transfers the wafer W to predetermined devices in the surrounding first block G1, second block G2, third block G3, and fourth block G4. can. As shown in FIG. 3, a plurality of wafer transfer devices 70 are arranged one above the other, and for example, the wafer W can be transferred to a predetermined device having the same height in each of the blocks G1 to G4.

Further, the wafer transfer region D is provided with a shuttle transfer device 80 that linearly transfers the wafer W between the third block G3 and the fourth block G4.

The shuttle transfer device 80 is linearly movable in the Y direction of FIG. 3, for example. The shuttle transfer device 80 moves in the Y direction while supporting the wafer W, and can transfer the wafer W between the transfer device 52 of the third block G3 and the transfer device 62 of the fourth block G4.

As shown in FIG. 1, a wafer transfer device 90 is provided next to the third block G3 on the positive direction side in the X direction. The wafer transfer device 90 has, for example, a transfer arm 90a that can move in the X direction, the θ direction, and the vertical direction. The wafer transfer device 90 can move up and down while supporting the wafer W to transfer the wafer W to each transfer device in the third block G3.

The interface station 13 is provided with a wafer transfer device 100 and a transfer device 101. The wafer transfer device 100 has, for example, a transfer arm 100a that can move in the Y direction, the θ direction, and the vertical direction. The wafer transfer device 100 can, for example, support the wafer W on the transfer arm 100a and transfer the wafer W between each transfer device, the transfer device 101, and the exposure device 12 in the fourth block G4.

Here, the configuration of the heat treatment apparatus 40 described above will be described. For example, as shown in FIGS. 4 and 5, the heat treatment apparatus 40 includes a heating unit 121 in the housing 120 that heat-treats the wafer W as a heat treatment. An loading / unloading outlet 122 for loading / unloading the wafer W is formed on one side surface of the housing 120.

As shown in FIG. 4, the heating unit 121 is a heat plate accommodating unit that is located on the upper side and is movable up and down, and is located on the lower side and is integrated with the lid body 130 to form a processing chamber S. It is equipped with 131.

The lid 130 has a substantially tubular shape with an open lower surface. An exhaust portion 130a is provided at the center of the upper surface of the lid 130. The atmosphere in the processing chamber S is exhausted from the exhaust unit 130a.

A wafer W is placed in the center of the hot plate accommodating portion 131, and a hot plate 132 for heating the wafer W is provided. The hot plate 132 has a thick substantially disk shape, and a heater 140 for heating the hot plate 132 is provided inside the hot plate 132. As the heater 140, for example, an electric heater is used. Further, on the upper surface of the hot plate 132, a guide pin 133 that guides the wafer W to a predetermined position on the hot plate 132, and a support pin that supports the wafer W by separating the back surface of the wafer W from the upper surface of the hot plate 132. 134 is provided. The guide pin 133 and the support pin 134 are not shown in FIG. Further, the configuration related to the temperature control of the hot plate 132 will be described later.

As shown in FIGS. 4 and 5, the hot plate accommodating portion 131 is provided with an elevating pin 141 as a transfer portion that penetrates the hot plate 132 in the thickness direction. The elevating pin 141 can be elevated by a drive unit 142 such as a cylinder. The elevating pin 141 protrudes from the upper surface of the hot plate 132, and can transfer the wafer W to, for example, the wafer transfer device 70 that enters the inside of the housing 120 from the carry-in outlet 122.

The hot plate accommodating portion 131 has an annular holding member 150 that accommodates the hot plate 132 and holds the outer peripheral portion of the hot plate 132, and a substantially cylindrical support ring 151 that surrounds the outer peripheral portion of the holding member 150. ..

Next, the configuration of the hot plate 132 will be described in detail. The hot plate 132 is divided into a plurality of regions including an outer peripheral division region in which the outer peripheral portion excluding the central portion of the hot plate 132 is divided in the circumferential direction.
In the example of FIG. 6, one circular region R ₀ provided in the central portion in the plan view and arcuate regions R ₁ , R ₂ , R ₃ in which the outer peripheral portion in the plan view is divided into four equal parts in the circumferential direction. It is divided into a total of five areas including R ₄ (hereinafter, may be referred to as "peripheral division area R ₁ , R ₂ , R ₃ , R ₄ ").

Heaters 140 are individually incorporated in each region R ₀ to R ₄ of the hot plate 132, and each region R ₀ to R ₄ can be individually heated. Further, a temperature sensor 160 as a temperature measuring unit is embedded in each of the regions R ₀ to R ₄ . Each temperature sensor 160 measures the temperature in the regions _R0 to _R4 of the hot plate 132 provided with the temperature sensor 160. The calorific value of the heaters 140 in each region R ₀ to R ₄ is adjusted by, for example, the control unit 200 so that the temperature measured by the respective temperature sensors 160 becomes the set temperature for each region R ₀ to R ₄ . To.

Subsequently, the transfer arm 70a of the wafer transfer device 70 for loading and unloading the wafer W into and out of the heat treatment device 40 will be described with reference to FIGS. 7 and 8.
The transfer arm 70a as a substrate holding portion of the wafer transfer device 70 is provided so as to be able to move forward and backward from the base (not shown) of the device 70 to hold the wafer W. As shown in FIG. 7, the transport arm 70a is provided with, for example, four holding claws 71 on which the peripheral edge portion of the wafer W is placed.

Further, when the transfer arm 70a is retracted while holding the wafer W, the detection units 170 of three or more (four in the example of the figure) that detect the position of the edge of the wafer W at different positions. (170A to 170D) are provided for the transfer arm 70a. The detection unit 170 (170A to 170D) is provided so as to overlap the edge portion of the wafer W held by the transfer arm 70a in a plan view when the transfer arm 70a is retracted.

As shown in FIG. 8, the detection unit 170 (170A to 170D) is composed of a combination of a light source 171 (171A to 171D) and a light receiving unit 172 (172A to 172D) in which a plurality of light receiving elements are arranged. There is. The light source 171 (171A to 171D) is, for example, an LED (Light Emitting Diode), and the light receiving unit 172 (172A to 172D) is, for example, a linear image sensor. The light source 171 (171A to 171D) and the light receiving unit 172 (172A to 172D) are provided so as to face each other with the wafer W held by the retracting transfer arm 170 interposed therebetween.

Based on the detection results of the detection units 170 (170A to 170D) described above, the position of the wafer W in the transport arm 70a, specifically, the center position of the wafer W can be detected.

As shown in FIG. 1, the substrate processing system 1 described above is provided with a control unit 200. The control unit 200 is composed of, for example, a computer equipped with a CPU, a memory, or the like, and has a program storage unit (not shown). The program storage unit controls the processing of the wafer W in the substrate processing system 1 including a program for detecting the presence or absence of slippage of the wafer W on the hot plate 132 when the wafer W is placed on the hot plate 132. The program to be used is stored. The program may be recorded on a storage medium H readable by a computer and may be installed on the control unit 200 from the storage medium H.

Further, as shown in FIG. 9, the control unit 200 includes a storage unit 210, a slip estimation unit 211, a slip direction estimation unit 212, a holding position acquisition unit 213, and a slip determination unit 214.

The storage unit 210 stores information on the set temperature of each region R ₀ to R ₄ of the hot plate 132, and various information such as a slip direction estimation table.

The slip estimation unit 211 estimates the presence or absence of slip on the hot plate 132 of the wafer W when the wafer W is placed on the hot plate 132.
Here, when the wafer W is placed on the hot plate 132, the temperature of the hot plate 132 once drops from the set temperature due to the endothermic heat of the wafer W, and then returns to the set temperature.
However, when the wafer W slips toward the region _R1 during mounting on the hot plate 132 as shown in FIG. 10A, the wafer W does not slip and is placed in the center of the hot plate 132 as shown in FIG. 10B. As shown in FIG. 11A, the maximum amount of decrease from the set temperature of the region _R1 of the hot plate 132 is larger than that of the case. Further, when the wafer W slides toward the region _R1 , in the region R3 facing the region _R1 with the central region _R0 in between _, the maximum amount of drop from the set temperature of the hot plate 132 is as shown in FIG. 11B. Becomes smaller.
_On the other hand, when the wafer W slips toward the region R3 during mounting on the hot plate 132 as shown in FIG. 10C, the wafer W does not slip and is mounted in the center of the hot plate 132. As shown in 11B _, the maximum amount of decrease from the set temperature of the region R3 of the hot plate 132 becomes large. Further, when the wafer W slides toward the region R3 _, the maximum amount of drop from the set temperature of the hot plate 132 in the region _R1 facing the region R3 with the central region _R0 in between _, as shown in FIG. 11A. Becomes smaller. In the following, "the maximum amount of drop from the set temperature when the wafer W is placed on the hot plate 132" may be referred to as "undershoot amount".

Based on the above findings, the slip estimation unit 211 mounts the wafer W on the hot plate 132 based on the temperature measurement result by the temperature sensor 160 while the wafer W is mounted on the hot plate 132. It is estimated whether or not the wafer W is slipped on the hot plate 132 when it is placed. In the following, "slip of the wafer W when the wafer W is placed on the hot plate 132" may be abbreviated as "slip of the wafer W".
Specifically, the slip estimation unit 211 estimates that the wafer W has slipped in the following cases. That is, it is a case where the undershoot amount exceeds the reference value in any one or more of the outer peripheral division regions _R1 to _R4 of the hot plate 132. However, in the above case, and when the undershoot amount is less than the reference value in the outer peripheral division regions _R1 to _R4 facing any one or more of the above regions, it is estimated that the slip has occurred. You may. In this example, it is presumed that the wafer W slipped as in the latter case.
Further, the reference value may be set individually for each of the outer peripheral division regions _R1 to _R4 , or may be common to the outer peripheral division regions _R1 to _R4 .
Further, the reference value may have a range to be used as a reference range. In this case, "exceeding the reference value" means that the undershoot amount exceeds the maximum value in the reference region, and "less than the reference value" means that it is less than the minimum value in the reference region. , "It is a reference value" means "it falls within the reference range".

The slip direction estimation unit 212 estimates the slip direction when the wafer W is slipped. Here, while the wafer W is placed on the hot plate 132, the maximum amount of decrease of the measured temperature from the set temperature in the temperature sensor 160 provided in any of the outer peripheral division regions _R1 to _R4 is increased. It is assumed that the standard value is exceeded. In this case, the slip direction estimation unit 212 sets the direction corresponding to the outer peripheral division regions _R1 to _R4 provided with the temperature sensor 160 in which the maximum amount of decrease of the measured temperature from the set temperature exceeds the reference value. It is estimated to be the sliding direction of W. That is, when the undershoot amount exceeds the reference value in the region of any one or more of the outer peripheral division regions _R1 to _R4 of the hot plate 132, the slip direction estimation unit 212 is in the region of any one or more. The corresponding direction is estimated to be the sliding direction of the wafer W. However, in the slip direction estimation unit 212, when the undershoot amount exceeds the reference value in any one or more of the outer peripheral division regions _R1 to _R4 and is less than the reference value in the region facing the outer peripheral division region. The direction corresponding to these outer peripheral division regions may be estimated as the sliding direction of the wafer W. In this example, the slip direction is estimated as in the latter case.

For example, as shown in FIG. 12, the sliding direction estimation unit 212 selects one direction from a plurality of directions set for the hot plate 132, and estimates that direction as the sliding direction. In the example of FIG. 12, four directions D1 to D4 are set for the hot plate 132 provided with the outer peripheral division regions _R1 to _R4 .

Further, the sliding direction estimation unit 212 estimates the sliding direction of the wafer W by using the sliding direction estimation table T as shown in FIG. In the slip direction estimation table T, each of the plurality of directions set for the hot plate 132 described above is associated with an outer peripheral division region in which the undershoot amount exceeds the reference value and an outer peripheral division region in which the undershoot amount is less than the reference value. ing. In the above table T, "deep" means a case where the reference value is exceeded, and "shallow" means a case where the reference value is less than the reference value. In the slip direction estimation table T of FIG. 13, for example, the direction D1 set for the hot plate 132, the outer peripheral division regions _R1 and _R2 in which the undershoot amount exceeds the reference value, and the outer peripheral division below the reference value. Areas R ₃ and R ₄ are associated with each other.

The holding position acquisition unit 213 acquires the holding position of the wafer W in the transfer arm 70a of the wafer transfer device 70 that holds the wafer W and carries it in and out of the heat treatment device 40. The information related to the holding position is acquired from, for example, the light receiving unit 172 (172A to 172D) of the detection unit 170 (170A to 170D) of the wafer transfer device 70. The above-mentioned holding position acquisition unit 213 acquires the holding position of the wafer W on the transfer arm 70a before and after the heat treatment in the heat treatment apparatus 40.

The slip determination unit 214 determines whether or not the wafer W is slipped based on the estimation result of the slip direction estimation unit 212 and the acquisition result of the holding position acquisition unit 213. More specifically, the slip determination unit 214 has a direction in which the holding position of the wafer W is displaced by the transfer arm 70a before and after the heat treatment in the heat treatment apparatus 40 based on the acquisition result of the holding position acquisition unit 213 (hereinafter,). "Position deviation direction") is calculated. Then, it is determined whether or not the wafer W is slipped based on whether or not the calculated positional deviation direction and the slip direction estimated by the slip direction estimation unit 212 match. For example, when the calculated positional deviation direction and the sliding direction estimated by the sliding direction estimation unit 212 match, it is determined that the wafer W has slipped.

Next, the wafer W processing performed by the substrate processing system 1 will be described.

In the processing of the wafer W, first, the cassette C accommodating a plurality of wafers W is placed on a predetermined cassette mounting plate 21 of the cassette station 10. After that, each wafer W in the cassette C is sequentially taken out by the wafer transfer device 23 and transferred to, for example, a transfer device 53 of the third block G3 of the processing station 11.

Next, the wafer W is transferred to the heat treatment device 40 of the second block G2 by the wafer transfer device 70, and the temperature is adjusted. After that, the wafer W is transferred by the wafer transfer device 70 to, for example, the lower antireflection film forming device 31 of the first block G1, and the lower antireflection film is formed on the wafer W. After that, the wafer W is transferred to the heat treatment apparatus 40 of the second block G2 and heat-treated.

During the heat treatment in the heat treatment device 40, first, the transfer arm 70a of the wafer transfer device 70 holding the wafer W is retracted before being inserted into the heat treatment device 40, and the detection unit 170 (170A to 170D). ) Detects the position of the edge of the wafer W. Then, as the information regarding the holding position of the wafer W in the transfer arm 70a before the heat treatment by the heat treatment apparatus 40, the information on the position of the edge of the wafer W is acquired by the holding position acquisition unit 213.

Next, the transfer arm 70a holding the wafer W is moved above the hot plate 132. Next, the elevating pin 141 is raised, and the wafer W of the transport arm 70a is delivered to the elevating pin 141. After that, the transfer arm 70a is retracted from the hot plate 132, the elevating pin 141 is lowered, the wafer W is placed on the hot plate 132, and the heat treatment by the hot plate 132 is started.

In order to control each of the regions R ₀ to R ₄ of the hot plate 132 to the set temperature, while the wafer W is placed on the hot plate 132, the temperature sensor 160 of each of the regions R ₀ to R ₄ determines the outer peripheral division region. Temperature continues to be measured. Then, in any of the outer peripheral division regions _R1 to _R4 of the hot plate 132, the undershoot amount of the temperature of the hot plate 132 exceeds the reference value, and the undershoot is the outer peripheral division region facing the outer peripheral division region. Whether the amount is less than the reference value is determined by the slip estimation unit 211. As a result, when the undershoot amount exceeds the reference value in any of the outer peripheral division regions _R1 to _R4 of the hot plate 132 and the undershoot amount is less than the reference value in the opposite outer peripheral division region, the slip estimation unit. According to 211, it is estimated that the wafer W was slipped. For example, in other cases, it is presumed that the wafer W did not slip.

When it is estimated that the wafer W has slipped, the slip direction estimation unit 212 estimates the slip direction of the wafer W using the slip direction estimation table T. For example, when the undershoot amount of the outer peripheral division regions R ₁ and R ₂ exceeds the reference value and the undershoot amount of the outer peripheral division regions R ₃ and R ₄ is less than the reference value, the direction is based on the slip direction estimation table T. D1 is presumed to be the slip direction.

When the heat treatment of the wafer W is performed for a predetermined time, the elevating pin 141 is raised and the wafer W is moved above the hot plate 132. After that, after the transfer arm 70a is inserted between the wafer W and the hot plate 132, the elevating pin 141 is lowered, and the wafer W is delivered from the elevating pin 141 to the transfer arm 70a.
Next, when the transfer arm 70a holding the wafer W is retracted, the detection unit 170 (170A to 170D) detects the position of the edge of the wafer W again. Then, as information on the holding position of the wafer W on the transfer arm 70a after the heat treatment by the heat treatment apparatus 40, the information on the position of the edge of the wafer W is sent from the detection unit 170 (170A to 170D), and the holding position acquisition unit. Obtained by 213.

Next, based on the information regarding the holding position of the wafer W on the transfer arm 70a before and after the heat treatment acquired by the holding position acquisition unit 213, the tendency of the wafer W to be displaced on the transfer arm 70a before and after the heat treatment is determined. Calculated by the slip determination unit 214. Then, based on whether or not the calculated positional deviation direction and the slip direction estimated by the slip direction estimation unit 212 match, whether or not the wafer W has slipped is determined by the slip determination unit 214.

If it is determined by the slip determination unit 214 that there is slip, the processing of the wafer W is stopped, and the wafer W is returned to, for example, the cassette C.

On the other hand, when the slip determination unit 214 determines that there is no slip, the wafer W is returned to the transfer device 53 of the third block G3. Next, the wafer W is transferred by the wafer transfer device 90 to the transfer device 54 of the same third block G3. After that, the wafer W is transferred to the adhesion device 41 of the second block G2 by the wafer transfer device 70, and is hydrophobized. After that, the wafer W is transferred to the resist coating device 32 by the wafer transfer device 70, and a resist film is formed on the wafer W. After that, the wafer W is transferred to the heat treatment device 40 by the wafer transfer device 70 and prebaked. In the subsequent heat treatment, as in the heat treatment before the resist film formation described above, the presence or absence of slippage of the wafer W is estimated, the slip direction of the wafer W is estimated, and the positional deviation direction before and after the heat treatment is calculated. , Whether or not the wafer W is slipped is determined.

After the pre-baking process, the wafer W is transferred by the wafer transfer device 70 to the transfer device 55 of the third block G3.
Next, the wafer W is conveyed to the upper antireflection film forming device 33 by the wafer conveying device 70, and the upper antireflection film is formed on the wafer W. After that, the wafer W is transferred to the heat treatment device 40 by the wafer transfer device 70, heated, and temperature-controlled. After that, the wafer W is transferred to the peripheral exposure apparatus 42 and subjected to peripheral exposure processing.

After that, the wafer W is transferred to the transfer device 56 of the third block G3 by the wafer transfer device 70.

Next, the wafer W is conveyed to the transfer device 52 by the wafer transfer device 90, and is transferred to the transfer device 62 of the fourth block G4 by the shuttle transfer device 80.

After that, the wafer W is transferred to the exposure device 12 by the wafer transfer device 100 of the interface station 7 and exposed. Next, the wafer W is transferred by the wafer transfer device 100 to the transfer device 60 of the fourth block G4. After that, the wafer W is transferred to the heat treatment device 40 by the wafer transfer device 70, and is baked after exposure. After that, the wafer W is transferred to the developing processing apparatus 30 by the wafer conveying device 70 and developed. After the development is completed, the wafer W is transferred to the heat treatment device 40 by the wafer transfer device 90 and post-baked.
After that, the wafer W is transferred to the transfer device 50 of the third block G3 by the wafer transfer device 70, and then transferred to the cassette C of the predetermined cassette mounting plate 21 by the wafer transfer device 23 of the cassette station 10. In this way, a series of photolithography processes are completed.

According to this embodiment, the temperature of the outer peripheral division regions _R1 to _R4 of the hot plate 132, which correlates with the slip of the wafer W, is measured by the temperature sensor 160, and the measurement result is acquired. Therefore, it is possible to accurately estimate the presence or absence of slippage of the wafer W based on the above measurement results.

Further, according to the present embodiment, the sliding direction of the wafer W is estimated, and the tendency of the wafer W to be displaced on the transfer arm 70a before and after the heat treatment on the hot plate 132 is acquired. Then, the presence or absence of slipping of the wafer W is determined based on the estimated slip direction and the above-mentioned positional deviation direction. Therefore, the presence or absence of slippage of the wafer W can be detected more accurately.

In the above example, the processing of the wafer W is stopped based on the determination result of the slip determination unit 214 based on the estimation result of the slip estimation unit 211. However, instead of this, the processing of the wafer W may be stopped when the slip estimation unit 211 estimates that the wafer W has slipped without providing the slip determination unit 214 or the slip direction estimation unit 212.

(Second Embodiment)
In the first embodiment, when the slip determination unit 214 determines that the wafer W has slipped, or when the slip estimation unit 211 determines that the wafer W has slipped, the processing of the wafer W has been stopped. .. In other words, as described above, the moving section of the elevating pin is provided with a section that operates at high speed (high speed region) and a section that operates at low speed (low speed region). However, in the first embodiment, the high speed of the elevating pin 141 is provided. When the positions of the region and the low speed region were not appropriate, the processing of the wafer W was stopped.
On the other hand, in the present embodiment, as shown in FIG. 14, a speed range setting unit that sets a high-speed range in which the elevating pin 141 is moved at a relatively high speed and a low-speed range in which the elevating pin 141 is moved at a relatively low speed. The control unit 200a has 220. Then, in the present embodiment, when the positions of the high-speed region and the low-speed region of the elevating pin 141 are not appropriate, that is, when the slip determination unit 214 or the slip estimation unit 211 determines or estimates that the wafer W has slipped, the speed is increased. The area setting unit 220 resets the low speed area and the high speed area. As shown in FIG. 15, a low-speed region is included between the high-speed region and the high-speed region.

As described above, when the wafer W is placed on the hot plate 132, the temperature of the hot plate 132 once drops from the set temperature and then returns to the set temperature.
However, as shown in FIG. 16, when the surface of the hot plate 132 (the upper surface of the support pin 134) is located relatively above the set location in the moving section of the elevating pin 141, the hot plate 132 is mounted on the hot plate 132. At the time of placement, the time during which the wafer W is heated by the radiant heat from the hot plate 132 is short. Therefore, since the wafer W having a relatively low temperature is placed on the hot plate 132, the amount of undershoot of the hot plate 132 becomes large as shown in FIG. On the other hand, if the surface of the hot plate 132 is located relatively lower than the set location in the section where the transfer pin 141 is moved, the wafer W is moved from the hot plate 132 when it is placed on the hot plate 132. It takes a long time to be heated by the radiant heat of. Therefore, since the wafer W having a relatively high temperature is placed on the hot plate 132, the amount of undershoot of the hot plate 132 becomes small.

Based on the above findings, the speed range setting unit 220 resets the high speed range and the low speed range based on the temperature of the hot plate 132 when the wafer W is placed. Specifically, if the positions of the high-speed region and the low-speed region are not appropriate, the high-speed region and the low-speed region are reset depending on whether the undershoot amount exceeds or falls below the threshold value. For example, if the undershoot amount exceeds the threshold value, the low speed range is reset to move upward, and if the undershoot amount falls below the threshold value, the low speed range is reset to move downward. The speed range setting unit 220 sets the high speed range based on the temperature change in the central portion of the hot plate 132 when the wafer W is placed (for example, based on the undershoot amount of the central region _R0 ). A low speed range may be set. Further, instead of this, the speed range setting unit 220 has a high speed based on the temperature change of the entire hot plate 132 when the wafer W is placed (for example, based on the undershoot amount in the regions _R0 to _R4 ). The range and the low speed range may be set.
It should be noted that the threshold value may be set to have a range. In this case, "above the threshold value" means that the amount of undershoot exceeds the maximum value in the threshold area, and "below the threshold value" means that the amount is less than the minimum value in the threshold area.

The low-speed region is designed, for example, as shown in FIG. 15, the distance from the low-speed drive start point to the surface of the hot plate 132 is 60%, and the distance from the surface to the low-speed drive end point is 40%. Of the above 60%, 40%, which is 2/3, is provided as an area required for speed statically determinate when transferring from the elevating pin 141 to the hot plate 132, and 20%, which is 1/3, is a grace period. be. Further, 0.5% of the low speed range is allocated as a region required for speed statically determinate at the time of transfer from the hot plate 132 to the elevating pin 141.

Therefore, the speed range setting unit 220 resets the high-speed range and the low-speed range, for example, as in (A) or (B) below.

(A) First resetting method In this method, for example, when the undershoot amount exceeds the threshold value, the speed range setting unit 220 slides the low speed range downward by the above-mentioned grace period, that is, 20%, and the threshold value. If it is below, slide the low speed range upward by 20%.
When resetting the low speed range in this way, if the position of the low speed range is not appropriate even after resetting, slide the low speed range in the same direction by the same amount.

(B) Second resetting method In this method, the speed range setting unit 220 resets the high-speed range and the low-speed range in consideration of the margin for setting the speed. For example, when the amount of undershoot exceeds the threshold value, the low speed range is slid downward by 40%. Further, for example, when the amount of undershoot is less than the determination value, the low speed region is slid upward by 5.5%, which is the difference (sum of the entire low speed region-margin).
When the low speed region is reset in this way, if the position of the low speed region is not appropriate even after the resetting, it is considered that the deviation of the low speed region is too large, and then the processing of the wafer W may be stopped.

According to the present embodiment, the position in the low speed region, which is not appropriate, can be made appropriate, and the slip of the wafer W can be eliminated without stopping the processing of the wafer W.

The embodiments disclosed this time should be considered to be exemplary and not restrictive in all respects. The above embodiments may be omitted, replaced or modified in various embodiments without departing from the scope of the appended claims and their gist.

The following configurations also belong to the technical scope of the present disclosure.
(1) A heat treatment device that heat-treats a substrate.
It has a hot plate on which the substrate is placed and heats the substrate.
The hot plate is divided into a plurality of regions including an outer peripheral division region in which the outer peripheral portion excluding the central portion of the hot plate is divided in the circumferential direction, and the temperature is set for each region.
The heat treatment device further
A temperature measuring unit provided in each of the outer peripheral division regions of the hot plate and measuring the temperature of the outer peripheral division region of the hot plate.
The substrate of the substrate when the substrate is placed on the hot plate based on the amount of drop of the temperature measured by the temperature measuring unit from the set temperature when the substrate is placed on the hot plate. A heat treatment apparatus having a slip estimation unit for estimating the presence or absence of slip.
In the above (1), the temperature of the outer peripheral division region of the hot plate, which correlates with the slip of the substrate when placed on the hot plate, is measured by the temperature measuring unit, and the measurement result is acquired. Therefore, it is possible to accurately estimate the presence or absence of slippage of the substrate based on the measurement result.

(2) The slip estimation unit is based on the set temperature of the temperature measured by the temperature measuring unit provided in any of the outer peripheral division regions when the substrate is placed on the hot plate. The heat treatment apparatus according to (1) above, wherein it is estimated that the substrate has slipped when the maximum amount of descent exceeds the reference value.

(3) When the substrate is placed on the heat plate, the maximum amount of decrease of the measured temperature from the set temperature in the temperature measuring unit provided in any of the outer peripheral division regions is a reference value. The heat treatment according to (1) or (2) above, which has a sliding direction estimation unit that estimates the direction corresponding to the outer peripheral division region provided with the temperature measuring unit as the sliding direction of the substrate. Device.

(4) A holding position acquisition unit for acquiring the holding position of the substrate in the substrate holding unit of the substrate transfer device that holds the substrate and carries it in and out of the heat treatment apparatus.
It has a slip determination unit that determines the presence or absence of slip, and has.
The holding position acquisition unit acquires the holding position of the substrate in the substrate holding unit before and after the heat treatment by the heat treatment apparatus.
The heat treatment apparatus according to (3) above, wherein the slip determination unit determines the presence or absence of slip based on the estimation result of the slip direction estimation unit and the acquisition result of the holding position acquisition unit.
In (3) above, the sliding direction of the substrate is estimated, and the holding position of the substrate in the substrate holding portion before and after the heat treatment on the hot plate is acquired. Then, based on the estimated slip direction and the acquisition result of the holding position of the substrate, the presence or absence of slip of the substrate is determined. Therefore, it is possible to more accurately detect the presence or absence of slippage of the substrate.

(5) A transfer portion that moves in a direction intersecting the substrate mounting surface of the hot plate and transfers the substrate to and from the hot plate.
The drive unit that drives the transfer unit and
It has a high-speed range for moving the delivery section at high speed and a speed range setting section for setting a low-speed range for moving the delivery section at low speed.
The speed range setting unit according to any one of (1) to (4), which sets the high speed range and the low speed range based on the temperature of the hot plate when the substrate is placed. Heat treatment equipment.
In (6) above, the high-speed range and the low-speed range are set based on the temperature of the hot plate when the substrate is placed. Therefore, the position in the low speed region, which is not appropriate, can be made appropriate, and the slip of the wafer W can be eliminated without stopping the processing of the wafer W.

(6) The speed range setting unit is described in (6) above, which sets the high speed range and the low speed range based on the change in temperature of the central portion of the hot plate when the substrate is placed. Heat treatment equipment.

(7) The heat treatment according to (6) above, wherein the speed range setting unit sets the high speed range and the low speed range based on the change in the temperature of the entire hot plate when the substrate is placed. Device.

(8) A substrate slip detection method for detecting the presence or absence of substrate slip on a hot plate.
The hot plate is divided into a plurality of regions including an outer peripheral division region in which the outer peripheral portion excluding the central portion of the hot plate is divided in the circumferential direction, and the temperature is set for each region and each outer peripheral division region is set. A temperature measuring unit is provided,
The substrate slip detection method is
The substrate of the substrate when the substrate is placed on the hot plate based on the amount of drop of the temperature measured by the temperature measuring unit from the set temperature when the substrate is placed on the hot plate. It has a slip estimation step, which estimates the presence or absence of slip.

40 Heat treatment device 132 Hot plate 160 Temperature sensor 211 Slip estimation unit R ₁ to R ₄ Outer peripheral division area

Claims (6)

A heat treatment device that heat-treats a substrate.
It has a hot plate on which the substrate is placed and heats the substrate.
The hot plate is divided into a plurality of regions including an outer peripheral division region in which the outer peripheral portion excluding the central portion of the hot plate is divided in the circumferential direction, and the temperature is set for each region.
The heat treatment device further
A temperature measuring unit provided in each of the outer peripheral division regions of the hot plate and measuring the temperature of the outer peripheral division region of the hot plate.
The substrate of the substrate when the substrate is placed on the hot plate based on the amount of drop of the temperature measured by the temperature measuring unit from the set temperature when the substrate is placed on the hot plate. A slip estimation unit that estimates the presence or absence of slip, and a slip estimation unit
Another temperature measuring unit that measures the temperature of the central part of the hot plate, and
A transfer portion that moves in a direction intersecting the substrate mounting surface of the hot plate and transfers the substrate to and from the hot plate.
The drive unit that drives the transfer unit and
It has a high-speed range for moving the delivery section at high speed and a speed range setting section for setting a low-speed range for moving the delivery section at low speed.
The speed range setting unit is a heat treatment apparatus that sets the high speed range and the low speed range based on the change in temperature of only the central portion of the hot plate when the substrate is placed . The slip estimation unit is the maximum amount of decrease of the measured temperature from the set temperature in the temperature measurement unit provided in any of the outer peripheral division regions when the substrate is placed on the heat plate. The heat treatment apparatus according to claim 1, wherein when the temperature exceeds the reference value, it is presumed that the substrate has slipped. When the substrate was placed on the hot plate, the maximum amount of decrease of the measured temperature from the set temperature exceeded the reference value in the temperature measuring unit provided in any of the outer peripheral division regions. In the case, the heat treatment apparatus according to claim 1 or 2, further comprising a slip direction estimation unit that estimates the direction corresponding to the outer peripheral division region provided with the temperature measurement unit as the slip direction of the substrate. A holding position acquisition unit for acquiring the holding position of the substrate in the substrate holding unit of the substrate transfer device that holds the substrate and carries it in and out of the heat treatment apparatus.
It has a slip determination unit that determines the presence or absence of slip, and has.
The holding position acquisition unit acquires the holding position of the substrate in the substrate holding unit before and after the heat treatment by the heat treatment apparatus.
The heat treatment apparatus according to claim 3, wherein the slip determination unit determines the presence or absence of slip based on the estimation result of the slip direction estimation unit and the acquisition result of the holding position acquisition unit. The low speed region has an upper low speed region above the surface of the hot plate and a lower low speed region below the surface of the hot plate.
The upper low speed region has a grace region as a part thereof.
Any one of claims 1 to 4, wherein the speed range setting unit slides the low speed range downward by the amount of the grace region when the maximum amount of decrease from the set temperature of the hot plate exceeds the threshold value. The heat treatment apparatus according to item 1. It is a substrate slip detection method that detects the presence or absence of slip of the substrate on the hot plate.
The hot plate is divided into a plurality of regions including an outer peripheral division region in which the outer peripheral portion excluding the central portion of the hot plate is divided in the circumferential direction, and the temperature is set for each region and each outer peripheral division region is set. A temperature measuring unit is provided,
The substrate slip detection method is
The substrate of the substrate when the substrate is placed on the hot plate based on the amount of drop of the temperature measured by the temperature measuring unit from the set temperature when the substrate is placed on the hot plate. A slip estimation process that estimates the presence or absence of slip, and a slip estimation process
A high-speed region for moving the transfer portion of the hot plate in a direction intersecting the substrate mounting surface and transferring the substrate to and from the hot plate at high speed and a low-speed region for moving the transfer portion at low speed are set. Has a speed range setting process,
The speed range setting step is a substrate slip detection method for setting the high speed range and the low speed range based on a change in temperature of only the central portion of the hot plate when the board is placed .

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