JP6308967B2 - Heat treatment apparatus, abnormality detection method in heat treatment, and readable computer storage medium - Google Patents

Description

  The present invention relates to a heat treatment apparatus for performing heat treatment by placing a substrate on a hot plate, a method for detecting an abnormality in heat treatment, and a readable computer storage medium.

  For example, in a photolithography process in a semiconductor device manufacturing process, for example, a resist coating process for applying a resist solution on a semiconductor wafer (hereinafter referred to as “wafer”) as a substrate to form a resist film, and forming the resist film into a predetermined pattern A predetermined resist pattern is formed on the wafer by sequentially performing an exposure process that exposes, a heating process (post-exposure baking) that promotes a chemical reaction in the resist film after exposure, and a development process that develops the exposed resist film. The

  The resist pattern formed by the photolithography process described above is used as a mask for determining a processing shape in a subsequent process of manufacturing a semiconductor device, and it is extremely important to form the resist pattern with a desired line width. The accumulated heat amount of the wafer in the post-exposure baking described above has a great influence on the line width of the resist pattern. To make the line width uniform within the wafer surface, the wafer surface is uniformly treated by heat treatment. It is important to heat.

  However, if the wafer is warped due to the influence of the process before the heat treatment, or if the foreign matter adheres to the back surface or the hot plate of the wafer and the wafer is lifted, the distance between the hot plate and the wafer is Therefore, it is difficult to uniformly heat the wafer surface.

  Therefore, as a method for detecting an abnormality during heat treatment, calculating an integral value of the difference between the set temperature of the hot plate and the surface temperature of the hot plate, and determining whether or not the integrated value exceeds a predetermined threshold value. It has been proposed (Patent Document 1).

JP 2009-123816 A

  However, the surface temperature of the hot plate changes under the influence of the ambient temperature around the hot plate and the airflow around the hot plate in addition to the contact state with the wafer. Therefore, with the method of Patent Document 1, it is difficult to detect an abnormality in heat treatment with a desired accuracy.

  The present invention has been made in view of this point, and an object thereof is to accurately detect an abnormality in the heat treatment of a substrate.

In order to achieve the above object, the present invention is a heat treatment apparatus for heat-treating a substrate, wherein a heat plate for placing and heating the substrate, and a protrusion protruding above a placement surface of the heat plate are disposed. A plurality of substrate support members, a state amount detection mechanism for detecting a state amount that changes with the mounting state of the substrate supported on the substrate support member, and a state amount detected by the state amount detection mechanism are predetermined. of if equal to or less than the threshold value, have a, a control unit determines that there is an abnormality in placed state of the substrate supported by the substrate support member, wherein the state quantity detection mechanism of the substrate support member A temperature sensor that measures the temperature of the tip, and the control unit detects that the mounting state of the substrate supported on the substrate support member is abnormal when the temperature measured by the temperature sensor is equal to or lower than a predetermined threshold value. It is characterized by determining that there is.

  According to the present invention, when the state quantity of the substrate supported on the substrate support member is detected by the state quantity detection mechanism and the state quantity detected by the state quantity detection mechanism falls below a predetermined threshold, the control unit Thus, it is determined that there is an abnormality in the mounting state, so that it is possible to detect an abnormality with higher accuracy than in the case where the abnormality detection is performed based on the surface temperature of the hot plate that is susceptible to disturbance as in the prior art.

  The substrate support member may be supported via an elastic member.

  A plurality of gap pins are provided on the mounting surface of the hot plate, and the tip of the substrate support member may protrude above the upper end surface of the gap pins in a state where the substrate is not supported. Good.

  The hot plate is divided into a plurality of regions, and the temperature can be set for each region, and at least one temperature sensor may be provided for each region.

According to another aspect of the present invention, there is provided a method for detecting an abnormality in heat treatment of a substrate placed on a hot plate, comprising a plurality of substrate support members disposed so as to protrude upward from the placement surface of the hot plate. The temperature of the substrate measured at the front end of the substrate support member, which changes with the mounting state of the substrate supported by the substrate support member, is measured, and the detected temperature of the substrate is predetermined. It is characterized in that it is determined that there is an abnormality in the mounting state of the substrate supported on the substrate support member when the threshold value is less than the threshold value.

  According to another aspect of the present invention, there is provided a readable computer storage medium storing a program that operates on a computer of a control unit that controls the heat treatment apparatus so that the abnormality detection method is executed by the heat treatment apparatus. Provided.

  According to the present invention, it is possible to accurately detect abnormality in the heat treatment of the substrate.

It is a top view which shows the outline of a structure of the substrate processing system concerning this Embodiment. It is a front view which shows the outline of a structure of the substrate processing system concerning this Embodiment. It is a rear view which shows the outline of a structure of the substrate processing system concerning this Embodiment. It is explanatory drawing of the longitudinal cross-section which shows the outline of a structure of the heat processing apparatus. It is explanatory drawing of the cross section which shows the outline of a structure of the heat processing apparatus. It is explanatory drawing of the plane which shows the outline of a structure of the hotplate of a heat processing apparatus. It is explanatory drawing of the plane which shows the outline of a structure of the hotplate of a heat processing apparatus. It is explanatory drawing of the longitudinal cross-section which shows the outline of a structure of a wafer support member vicinity. It is explanatory drawing of the longitudinal cross-section which shows the mode of the wafer support member vicinity when a wafer is mounted in a hot platen. It is explanatory drawing of the longitudinal cross-section which shows a mode when a wafer is mounted in the hot platen. It is explanatory drawing of the longitudinal cross-section which shows the outline of the structure of the wafer support member vicinity concerning other embodiment.

  Embodiments of the present invention will be described below. FIG. 1 is an explanatory diagram showing an outline of a configuration of a substrate processing system 1 including a heat treatment apparatus according to the present embodiment. 2 and 3 are a front view and a rear view showing an outline of the internal configuration of the substrate processing system 1. In the present embodiment, the case where the substrate processing system 1 is a coating and developing processing system that performs coating and developing processing on the wafer W will be described as an example. In the present specification and drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.

  As shown in FIG. 1, the substrate processing system 1 includes a cassette station 10 in which a cassette C containing a plurality of wafers W is loaded and unloaded, and a processing station 11 having a plurality of various processing apparatuses for performing predetermined processing on the wafers W. And an interface station 13 that transfers the wafer W to and from the exposure apparatus 12 adjacent to the processing station 11 is integrally connected.

  The cassette station 10 is provided with a cassette mounting table 20. The cassette mounting table 20 is provided with, for example, four cassette mounting plates 21 on which the cassette C is mounted when the cassette C is carried in and out of the substrate processing system 1.

  As shown in FIG. 1, the cassette station 10 is provided with a wafer transfer device 23 that is movable on a transfer path 22 that extends in the X direction. The wafer transfer device 23 is also movable in the vertical direction and the vertical axis direction (θ direction), and includes a cassette C on each cassette mounting plate 21 and a delivery device for a third block G3 of the processing station 11 described later. The wafer W can be transferred between the two.

  The processing station 11 is provided with a plurality of, for example, four blocks G1, G2, G3, and G4 having various devices. For example, the first block G1 is provided on the front side of the processing station 11 (X direction negative direction side in FIG. 1), and the second block is provided on the back side of the processing station 11 (X direction positive direction side in FIG. 1). Block G2 is provided. A third block G3 is provided on the cassette station 10 side (Y direction negative direction side in FIG. 1) of the processing station 11, and the interface station 13 side (Y direction positive direction side in FIG. 1) of the processing station 11 is provided. Is provided with a fourth block G4.

  For example, in the first block G1, as shown in FIG. 2, a plurality of liquid processing apparatuses, for example, a development processing apparatus 30 that develops the wafer W, an antireflection film (hereinafter referred to as “lower antireflection") A lower antireflection film forming device 31 for forming a film), a resist coating device 32 for applying a resist solution to the wafer W to form a resist film, and an antireflection film (hereinafter referred to as “upper reflection” on the resist film of the wafer W). An upper antireflection film forming device 33 for forming an “antireflection film” is arranged in this order from the bottom.

  For example, three development processing devices 30, a lower antireflection film forming device 31, a resist coating device 32, and an upper antireflection film forming device 33 are arranged in a horizontal direction. The number and arrangement of the development processing device 30, the lower antireflection film forming device 31, the resist coating device 32, and the upper antireflection film forming device 33 can be arbitrarily selected.

  In the development processing device 30, the lower antireflection film forming device 31, the resist coating device 32, and the upper antireflection film forming device 33, for example, spin coating for applying a predetermined coating solution onto the wafer W is performed. In spin coating, for example, a coating liquid is discharged onto the wafer W from a coating nozzle, and the wafer W is rotated to diffuse the coating liquid to the surface of the wafer W.

  For example, in the second block G2, as shown in FIG. 3, a heat treatment apparatus 40 for performing heat treatment such as heating and cooling of the wafer W, an adhesion apparatus 41 for hydrophobizing the wafer W, and a periphery for exposing the outer peripheral portion of the wafer W An exposure device 42 is provided side by side in the vertical direction and the horizontal direction. The heat treatment apparatus 40 has a heat plate for placing and heating the wafer W and a temperature adjustment plate for placing and adjusting the temperature of the wafer W, and performs both the heat treatment and the temperature adjustment treatment. The configuration will be described later. Further, the number and arrangement of the heat treatment apparatus 40, the adhesion apparatus 41, and the peripheral exposure apparatus 42 can be arbitrarily selected.

  For example, in the third block G3, a plurality of delivery devices 50, 51, 52, 53, 54, 55, and 56 are provided in order from the bottom. The fourth block G4 is provided with a plurality of delivery devices 60, 61, 62 in order from the bottom.

  As shown in FIG. 1, a wafer transfer region D is formed in a region surrounded by the first block G1 to the fourth block G4. In the wafer transfer region D, for example, a plurality of wafer transfer devices 70 having transfer arms that are movable in the Y direction, the X direction, the θ direction, and the vertical direction are arranged. The wafer transfer device 70 moves in the wafer transfer area D and transfers the wafer W to a predetermined device in the surrounding first block G1, second block G2, third block G3, and fourth block G4. it can.

  Further, in the wafer transfer region D, a shuttle transfer device 80 that transfers the wafer W linearly between the third block G3 and the fourth block G4 is provided.

  The shuttle transport device 80 is movable linearly in the Y direction, for example. The shuttle transfer device 80 moves in the Y direction while supporting the wafer W, and can transfer the wafer W between the transfer device 52 of the third block G3 and the transfer device 62 of the fourth block G4.

  As shown in FIG. 1, a wafer transfer apparatus 100 is provided next to the third block G3 on the positive side in the X direction. The wafer transfer apparatus 100 has a transfer arm that is movable in the X direction, the θ direction, and the vertical direction, for example. The wafer transfer device 100 can move up and down while supporting the wafer W, and can transfer the wafer W to each delivery device in the third block G3.

  The interface station 13 is provided with a wafer transfer device 110 and a delivery device 111. The wafer transfer device 110 has a transfer arm that is movable in the Y direction, the θ direction, and the vertical direction, for example. The wafer transfer device 110 can transfer the wafer W between each transfer device, the transfer device 111, and the exposure device 12 in the fourth block G4, for example, by supporting the wafer W on a transfer arm.

  The substrate processing system 1 is provided with a control unit 300 as shown in FIG. The control unit 300 is a computer, for example, and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the wafer W in the substrate processing system 1. The program storage unit also stores a program for controlling the operation of drive systems such as the above-described various processing apparatuses and transfer apparatuses to realize substrate processing described later in the substrate processing system 1. The program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 300 from the storage medium H.

  Next, the configuration of the heat treatment apparatus 40 described above will be described. For example, the heat treatment apparatus 40 includes a heating unit 121 that heat-processes the wafer W and a cooling unit 122 that cools the wafer W in the housing 120 as illustrated in FIGS. 4 and 5. As shown in FIG. 5, loading / unloading ports 123 for loading / unloading the wafer W are formed on both side surfaces of the casing 120 in the vicinity of the cooling unit 122.

  As shown in FIG. 4, the heating unit 121 includes a lid 130 that is located on the upper side and is movable up and down, and a hot plate housing portion that is located on the lower side and forms the processing chamber S integrally with the lid 130. 131 is provided.

  The lid 130 has a substantially cylindrical shape with an open bottom surface. An exhaust part 130 a is provided at the center of the upper surface of the lid 130. The atmosphere in the processing chamber S is exhausted from the exhaust part 130a.

  A hot plate 132 for placing and heating the wafer W is provided at the center of the hot plate housing portion 131. The hot plate 132 has a substantially disk shape with a thickness, and a heater 140 for heating the hot plate 132 is provided therein. For example, an electric heater is used as the heater 140. The configuration of the hot plate 132 will be described later.

  The hot plate accommodating portion 131 is provided with elevating pins 141 that penetrate the hot plate 132 in the thickness direction. The elevating pins 141 can be moved up and down by an elevating drive unit 142 such as a cylinder, and can protrude from the upper surface of the hot plate 132 to transfer the wafer W to and from a cooling plate 160 described later.

  For example, as shown in FIG. 4, the hot plate accommodating portion 131 accommodates the hot plate 132 and holds the outer peripheral portion of the hot plate 132, and a substantially cylindrical support surrounding the outer periphery of the holding member 150. A ring 151 is provided.

  In the cooling unit 122 adjacent to the heating unit 121, for example, a cooling plate 160 for mounting and cooling the wafer W is provided. For example, as shown in FIG. 5, the cooling plate 160 has a substantially rectangular flat plate shape, and the end surface on the heating unit 121 side is curved in an arc shape. A cooling member (not shown) such as a Peltier element is built in the cooling plate 160, and the cooling plate 160 can be adjusted to a predetermined set temperature.

  For example, as shown in FIG. 4, the cooling plate 160 is supported by a support arm 161, and the support arm 161 is attached to a rail 162 extending in the X direction on the heating unit 121 side. The cooling plate 160 can move on the rail 162 by a driving mechanism 163 attached to the support arm 161. Thereby, the cooling plate 160 can move to above the heating plate 132 on the heating unit 121 side.

  In the cooling plate 160, for example, as shown in FIG. 5, two slits 164 along the X direction are formed. The slit 164 is formed from the end surface of the cooling plate 160 on the heating unit 121 side to the vicinity of the central portion of the cooling plate 160. The slits 164 prevent interference between the cooling plate 160 moved to the heating unit 121 side and the elevating pins 141 on the heating plate 132. As shown in FIG. 5, elevating pins 165 are provided below the cooling plate 160 located in the cooling unit 122. The elevating pins 165 can be moved up and down by the elevating drive unit 166. The raising / lowering pins 165 rise from below the cooling plate 160, pass through the slits 164, protrude above the cooling plate 160, and, for example, between the wafer transfer apparatus 70 entering the inside of the housing 120 from the loading / unloading port 123. The wafer W can be delivered.

Next, the configuration of the hot plate 132 will be described in detail. As shown in FIG. 6, the hot plate 132 is divided into a plurality of, for example, five hot plate regions R ₁ , R ₂ , R ₃ , R ₄ , and R ₅ . The hot plate 132 is, for example, positioned in the center when viewed from the plane, and is divided into a circular hot plate region R ₁ and hot plate regions R _{2 to} R ₅ whose periphery is divided into four arcs.

In each of the hot plate regions R _{1 to} R ₅ of the hot plate 132, the heater 140 is individually incorporated, and can be individually heated for each of the hot plate regions R _{1 to} R ₅ . The amount of heat generated by the heater 140 in each of the hot plate regions R _{1 to} R ₅ is adjusted by, for example, the control unit 300. The controller 300 can adjust the amount of heat generated by each heater 140 to control the temperature of each of the hot plate regions R _{1 to} R ₅ to a predetermined set temperature.

As shown in FIG. 7, a plurality of wafer support members 170 as a substrate support member for supporting the wafer W and a plurality of gap pins 171 are provided on the mounting surface 132 a on the upper surface of the hot plate 132. In FIG. 7, the wafer support member 170 is indicated by hatching in order to distinguish the wafer support member 170 from the gap pins 171. As shown in FIG. 7, one wafer support member 170 is disposed in each of the hot plate regions R _{1 to} R ₅ . The gap pin 171 is arranged concentrically with the heat plate 132, for example. The arrangement of the wafer support members 170 and the gap pins 171 is not limited to the contents of the present embodiment, and the arrangement can be arbitrarily set as long as the wafer W can be supported uniformly.

  As shown in FIG. 8, the wafer support member 170 includes a casing 180 and a support portion 181 provided in the casing 180 so as to be movable up and down. The lower surface of the support portion 181 is supported by an elastic member 182 such as a spring provided on the bottom surface of the casing 180. A connecting rod 183 extending through the bottom surface of the casing 180 is connected to the lower surface of the support portion 181. A weight sensor 184 as a state quantity detection mechanism is connected to the lower end of the connecting rod 183. That is, the support portion 181 of the wafer support member 170 is connected to the weight sensor 184 via the elastic member 182. The detection result of the weight sensor 184 is input to the control unit 300.

  The support portion 181 is for supporting the back surface of the wafer W. In the state where the wafer W is not supported as shown in FIG. 8, the support portion 181 is located above the placement surface 132a and the upper ends of the gap pins 171. It is in a protruding state. Further, the tip of the support portion 181 has a spherical shape similar to that of the gap pin 171 so as not to damage the back surface of the wafer W when in contact with the wafer W. When the wafer W is placed on the hot plate 132, the elastic member 182 contracts downward due to the load of the wafer W acting on the support portion 181. Here, the spring multiplier of the elastic member 182 in the present embodiment is such that, for example, when the wafer W is placed on the hot plate 132, the upper end portion of the support portion 181 and the upper end portion of the gap pin 171 due to the load of the wafer W. The support portion 181 is set so as to be pushed down to a position where the heights are aligned. Therefore, as shown in FIG. 9, the support portion 181 is pushed down by the load of the wafer W, and the wafer W is supported by the wafer support member 170 and the gap pins 171. At this time, the load acting on the wafer support member 170 is transmitted to the weight sensor 184 via the connecting rod 183, and the load is measured by the weight sensor.

  The substrate processing system 1 according to the present embodiment is configured as described above. Next, wafer processing performed using the substrate processing system 1 will be described.

  First, a cassette C storing a plurality of wafers W is carried into the cassette station 10 of the substrate processing system 1, and each wafer W in the cassette C is sequentially transferred to the transfer device 53 of the processing station 11 by the wafer transfer device 23. .

  Next, the wafer W is transferred to the heat treatment apparatus 40 of the second block G2 by the wafer transfer apparatus 70 and subjected to temperature adjustment processing. Thereafter, the wafer W is transferred to, for example, the lower antireflection film forming device 31 of the first block G1 by the wafer transfer device 70, and a lower antireflection film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment apparatus 40 of the second block G2, and heat treatment is performed.

  The wafer W transferred to the heat treatment apparatus 40 is first placed on the cooling plate 160. Subsequently, the cooling plate 160 is moved above the hot plate 132. Next, the lift pins 141 are raised, and the wafer W on the cooling plate 160 is transferred to the lift pins 141. Thereafter, the cooling plate 160 is retracted from the hot plate 132, the lifting pins 141 are lowered, and the wafer W is transferred onto the hot plate 132.

  At this time, for example, as shown in FIG. 10, if foreign matter M larger than the gap pins 171 adheres to the upper surface of the hot plate 132 or the back surface of the wafer W, the wafer W is placed on the hot plate 132 in an inclined manner. It becomes a state. Then, for example, the wafer support member 170a close to the foreign matter M and the wafer support member 170b far from the foreign matter M have different loads due to the wafer W. The controller 300 constantly monitors the load acting on each weight sensor 184 during the heat treatment. For example, when the load detected by the weight sensor 184 falls below a predetermined threshold, the wafer W is loaded. Is determined to be abnormal. This threshold value is a load obtained by the weight sensor 184 when a preliminary test is performed in which the measurement wafer W is placed in advance on the hot plate 132 in a state in which there is no adhesion of foreign matter M or warpage of the wafer W, for example. Is set based on

The control unit 300 also determines the cause of the abnormality based on the load of each weight sensor 184 when it is determined that the placement is abnormal. Specifically, when the load of the weight sensor 184 in the region R ₂ of the hot plate 132 is below a threshold, the region R ₂ of the thermal plate 132 has foreign matter M, it is determined that run-up of the wafer W is generated The The same applies to the regions R _{3 to} R ₅ . Further, when the load of the weight sensor 184 corresponding to the region R ₁ of the center portion is below a threshold, there is foreign material M in the central portion of the heating plate 132, or riding up on the wafer W occurs, or the central portion of the wafer W Is judged to be warped upward. On the other hand, when the load of the weight sensor 184 in the regions R _{2 to} R ₅ is equal to or less than the threshold value, it is determined that there are a plurality of foreign matters M or a warped shape in which the central portion of the wafer W is recessed in a concave shape. When the controller 300 determines that the mounting state of the wafer W is abnormal, the heat treatment is stopped, and the wafer W is collected in, for example, the cassette C. When there is no abnormality, that is, when there is no foreign matter M, no warp, or slight, and the load of each weight sensor 184 is within the threshold value, the heat treatment is continued as it is.

  When the heat treatment of the wafer W is performed for a predetermined time, the elevating pins 141 are lifted and the wafer W is moved above the hot plate 132, and the cooling plate 160 is moved onto the hot plate 132. The wafer W is delivered to 160. The wafer W delivered to the cooling plate 160 is cooled to room temperature, for example, and is unloaded from the heat treatment apparatus 40.

  The wafer W that has been subjected to the heat treatment in the heat treatment apparatus 40 is transferred to the resist coating apparatus 32, and a resist film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment apparatus 40 and pre-baked. In addition, also in the subsequent heat treatment, the presence / absence of a mounting abnormality is determined in the same manner as the above-described heat treatment.

  Next, the wafer W is transferred to the upper antireflection film forming apparatus 33, and an upper antireflection film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment apparatus 40, heated, and the temperature is adjusted. Thereafter, the wafer W is transferred to the peripheral exposure device 42 and subjected to peripheral exposure processing.

  Next, the wafer W is transferred to the exposure apparatus 12 and subjected to exposure processing with a predetermined pattern.

  Next, the wafer W is transferred to the heat treatment apparatus 40 and subjected to post-exposure baking. Thereafter, the wafer W is transferred to, for example, the development processing apparatus 30 and developed. After completion of the development process, the wafer W is transferred to the heat treatment apparatus 40 and subjected to a post-bake process. Thereafter, the wafer W is transferred to the cassette C of the cassette mounting plate 21, and a series of photolithography steps is completed.

  According to the above embodiment, when the load of the wafer W supported by the wafer support member 170 is detected by the weight sensor 184 and the load detected by the control unit 300 is equal to or less than a predetermined threshold value, Since it is determined that the mounting state of the wafer W is abnormal, it is possible to detect the abnormality with higher accuracy than in the case where abnormality detection is performed based on the surface temperature of the hot plate 132 that is susceptible to disturbance as in the prior art. Can do.

In the above embodiment, the presence / absence of the mounting abnormality is determined by comparing the absolute value of the load detected by the weight sensor 184 in each of the regions R _{1 to} R ₅ with a threshold value. The setting of the threshold is not limited to the contents of the present embodiment. For example, when the difference in the load of the weight sensor 184 in each of the regions R _{1 to} R ₅ is calculated and the difference is larger than the predetermined threshold. You may determine with mounting abnormality. Further, an average value of the load of each weight sensor 184 may be calculated, and the average value may be compared with the load of each weight sensor 184.

Further, in the above embodiment, the wafer support member 170 and the weight sensor 184 are provided for each of the regions R _{1 to} R ₅ , but the arrangement and the number of installed wafer support members 170 and the weight sensors 184 are described in this embodiment. It is not limited to the contents of, and can be set arbitrarily. From the viewpoint of detecting the warpage of the wafer W and the rising due to the foreign matter M, the wafer support member 170 and the weight sensor 184 are preferably provided in at least three locations in a triangular arrangement. In order to increase the accuracy of abnormality detection, the number of wafer support members 170 and weight sensors 184 may be increased.

  In the above embodiment, the gap pins 171 are provided on the mounting surface 132a of the hot plate 132. However, if a plurality of wafer support members 170 are arranged, the wafer support members 170 can appropriately support the wafer W. The gap pin 171 is not always necessary. In such a case, the wafer support member 170 may be configured such that when the elastic member 182 is pushed down by the load of the wafer W, the upper end of the support portion 181 protrudes above the mounting surface 132a of the hot plate 132. .

  In the above embodiment, the load is detected by the weight sensor 184 via the connecting rod 183. However, the arrangement of the weight sensor 184 is not limited to this embodiment. A weight sensor 184 may be disposed immediately below the member 182 to directly measure the load acting on the elastic member 182.

  In the above embodiment, the mounting abnormality of the wafer W is detected based on the load acting on the wafer support member 170, but the distance between the wafer W and the hot plate 132 varies due to the foreign matter M and the warpage of the wafer W. If attention is paid to the fact that the temperature of the wafer W fluctuates as a result, for example, the temperature of the tip of the support portion 181 of the wafer support member 170 is measured, and the mounting abnormality of the wafer W is detected based on the measured temperature. Good.

  Specifically, for example, as shown in FIG. 11, instead of the weight sensor 184, a temperature sensor 190 as a state quantity detection mechanism for measuring the temperature at the tip of the support portion 181 of the wafer support member 170 is provided. 11 illustrates a state in which the temperature sensor 190 is built in the support portion 181, the temperature sensor 190 may be provided so as to be exposed at the upper end of the support portion 181. As the temperature sensor, for example, a thermocouple or a resistance temperature detector is used. Other configurations are the same as the case where the weight sensor 184 is provided on the wafer support member 170.

  When the wafer W is heat-treated, for example, as shown in FIG. 10, when the wafer W is placed on the hot plate while being tilted by the foreign matter M, the tip of the support portion 181 is caused to expand and contract by the elastic member 182. The position in the height direction of the support portion 181 varies so as to contact the back surface of the wafer W. In the case where the temperature sensor 190 is provided at the tip of the support portion 181, the spring multiplier and stroke of the elastic member 182 follow the warp of the wafer W and the inclination due to foreign matter, and the upper end of the support portion 181 contacts the back surface of the wafer W. It is set so that it can be made.

  Since the distance between the wafer W and the hot plate 132 is increased at a position close to the foreign matter M, the temperature of the wafer W at a position close to the foreign matter M is lower than the temperature of the wafer W at a position far from the foreign matter M. Then, for example, the temperature measured by the wafer support member 170a close to the foreign matter M is lower than the temperature measured by the wafer support member 170b far from the foreign matter M. Therefore, the control unit 300 sets the temperature of the wafer W to a predetermined threshold value. If it is lower than that, it is determined that the mounting state of the wafer W is abnormal.

Incidentally, when providing a temperature sensor 190 to the support portion 181 tip, on the basis of the temperature measurements of the temperature sensor 190 may be controlled individually temperature of the hot plate of each region R ₁ to R _5. That is, when the measured value of the temperature sensor 190 is lower than a predetermined temperature due to the foreign matter M or warpage, the output of the heater 140 corresponding to the region where the temperature decrease is confirmed is adjusted, and the measurement by the temperature sensor 190 is performed. Feedback control may be performed so that the value becomes a predetermined temperature. Even when the temperature during the heat treatment varies within the surface of the wafer W due to minute foreign matter or warpage, the output of each heater 140 is controlled so that the measured temperature in each of the regions R _{1 to} R ₅ is uniform. Thus, the inside of the wafer W surface can be heat-treated at a uniform temperature.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood. The present invention is not limited to this example and can take various forms. The present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.

  The present invention is useful when heat treating a substrate with a hot plate.

DESCRIPTION OF SYMBOLS 1 Substrate processing system 30 Development processing apparatus 31 Lower antireflection film forming apparatus 32 Resist coating apparatus 33 Upper antireflection film forming apparatus 40 Heat treatment apparatus 41 Adhesion apparatus 42 Peripheral exposure apparatus 132 Hot plate 140 Heater 170 Wafer support member 171 Gap pin 181 Support 182 Elastic member 184 Weight sensor 190 Temperature sensor W Wafer

Claims (6)

A heat treatment apparatus for heat treating a substrate,
A hot plate for placing and heating the substrate;
A plurality of substrate support members arranged to protrude upward from the mounting surface of the hot plate;
A state quantity detection mechanism for detecting a state quantity that varies with the mounting state of the substrate supported on the substrate support member;
When the state quantity detected by the state quantity detecting mechanism is equal to or less than a predetermined threshold value, have a, a control unit determines that there is an abnormality in placed state of the substrate supported by the substrate support member on ,
The state quantity detection mechanism is a temperature sensor that measures the temperature of the tip of the substrate support member,
The control unit determines that there is an abnormality in the mounting state of the substrate supported on the substrate support member when the temperature measured by the temperature sensor becomes a predetermined threshold value or less . Heat treatment equipment. The heat treatment apparatus according to claim 1 , wherein the substrate support member is supported via an elastic member. A plurality of gap pins are provided on the mounting surface of the hot plate,
3. The heat treatment apparatus according to claim 2 , wherein a tip end portion of the substrate support member protrudes upward from an upper end surface of the gap pin in a state where the substrate is not supported. The hot plate is divided into a plurality of regions, and the temperature can be set for each region.
The heat treatment apparatus according to claim 1, wherein at least one temperature sensor is provided for each of the regions. A method for detecting an abnormality in heat treatment of a substrate placed on a hot plate,
The substrate is supported by a plurality of substrate support members disposed so as to protrude above the mounting surface of the hot plate,
Detecting the temperature of the substrate measured at the tip of the substrate support member, which changes with the mounting state of the substrate supported by the substrate support member ;
An abnormality detection method in heat treatment, characterized in that, when the detected substrate temperature is equal to or lower than a predetermined threshold value, it is determined that there is an abnormality in the mounting state of the substrate supported on the substrate support member. A readable computer storage medium storing a program that operates on a computer of a control unit that controls the heat treatment apparatus so that the abnormality detection method according to claim 5 is executed by the heat treatment apparatus.

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