JP6382055B2 - 被処理体を処理する方法 - Google Patents

被処理体を処理する方法 Download PDF

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Publication number
JP6382055B2
JP6382055B2 JP2014206614A JP2014206614A JP6382055B2 JP 6382055 B2 JP6382055 B2 JP 6382055B2 JP 2014206614 A JP2014206614 A JP 2014206614A JP 2014206614 A JP2014206614 A JP 2014206614A JP 6382055 B2 JP6382055 B2 JP 6382055B2
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JP
Japan
Prior art keywords
plasma
gas
mask
film
silicon oxide
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JP2014206614A
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English (en)
Japanese (ja)
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JP2016076621A5 (enExample
JP2016076621A (ja
Inventor
嘉英 木原
嘉英 木原
亨 久松
亨 久松
昌伸 本田
昌伸 本田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2014206614A priority Critical patent/JP6382055B2/ja
Priority to EP15186427.9A priority patent/EP3007205B1/en
Priority to KR1020150134479A priority patent/KR102311575B1/ko
Priority to US14/866,467 priority patent/US9607811B2/en
Priority to CN201510634852.0A priority patent/CN105489483A/zh
Priority to CN202011049271.8A priority patent/CN112133630B/zh
Priority to SG10201508134VA priority patent/SG10201508134VA/en
Priority to TW104132754A priority patent/TWI661464B/zh
Publication of JP2016076621A publication Critical patent/JP2016076621A/ja
Publication of JP2016076621A5 publication Critical patent/JP2016076621A5/ja
Application granted granted Critical
Publication of JP6382055B2 publication Critical patent/JP6382055B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2014206614A 2014-10-07 2014-10-07 被処理体を処理する方法 Active JP6382055B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2014206614A JP6382055B2 (ja) 2014-10-07 2014-10-07 被処理体を処理する方法
EP15186427.9A EP3007205B1 (en) 2014-10-07 2015-09-23 Workpiece processing method
KR1020150134479A KR102311575B1 (ko) 2014-10-07 2015-09-23 피처리체를 처리하는 방법
US14/866,467 US9607811B2 (en) 2014-10-07 2015-09-25 Workpiece processing method
CN201510634852.0A CN105489483A (zh) 2014-10-07 2015-09-29 处理具有掩模的被处理体的方法
CN202011049271.8A CN112133630B (zh) 2014-10-07 2015-09-29 处理具有掩模的被处理体的方法
SG10201508134VA SG10201508134VA (en) 2014-10-07 2015-09-30 Workpiece Processing Method
TW104132754A TWI661464B (zh) 2014-10-07 2015-10-06 被處理體之處理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014206614A JP6382055B2 (ja) 2014-10-07 2014-10-07 被処理体を処理する方法

Publications (3)

Publication Number Publication Date
JP2016076621A JP2016076621A (ja) 2016-05-12
JP2016076621A5 JP2016076621A5 (enExample) 2017-12-28
JP6382055B2 true JP6382055B2 (ja) 2018-08-29

Family

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JP2014206614A Active JP6382055B2 (ja) 2014-10-07 2014-10-07 被処理体を処理する方法

Country Status (7)

Country Link
US (1) US9607811B2 (enExample)
EP (1) EP3007205B1 (enExample)
JP (1) JP6382055B2 (enExample)
KR (1) KR102311575B1 (enExample)
CN (2) CN112133630B (enExample)
SG (1) SG10201508134VA (enExample)
TW (1) TWI661464B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6559430B2 (ja) 2015-01-30 2019-08-14 東京エレクトロン株式会社 被処理体を処理する方法
JP6462477B2 (ja) 2015-04-27 2019-01-30 東京エレクトロン株式会社 被処理体を処理する方法
WO2017170411A1 (ja) 2016-03-29 2017-10-05 東京エレクトロン株式会社 被処理体を処理する方法
KR20170114579A (ko) 2016-04-05 2017-10-16 주식회사 만도 전압 제어 방법 및 그 제어 시스템
JP6541618B2 (ja) * 2016-05-25 2019-07-10 東京エレクトロン株式会社 被処理体を処理する方法
JP6832171B2 (ja) 2017-01-24 2021-02-24 東京エレクトロン株式会社 プラズマ処理装置のチャンバ本体の内部のクリーニングを含むプラズマ処理方法
JP6895352B2 (ja) * 2017-09-12 2021-06-30 東京エレクトロン株式会社 被加工物を処理する方法
JP6886940B2 (ja) * 2018-04-23 2021-06-16 東京エレクトロン株式会社 プラズマ処理方法
CN110581050B (zh) * 2018-06-07 2024-06-11 东京毅力科创株式会社 处理方法和等离子体处理装置
TWI820667B (zh) * 2018-06-19 2023-11-01 美商應用材料股份有限公司 間隙填充物沉積方法及類金剛石之碳的間隙填充物材料
CN110777361B (zh) * 2018-07-26 2023-08-01 东京毅力科创株式会社 等离子体处理方法和等离子体处理装置
JP7345283B2 (ja) * 2018-07-26 2023-09-15 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
JP7178918B2 (ja) 2019-01-30 2022-11-28 東京エレクトロン株式会社 エッチング方法、プラズマ処理装置、及び処理システム
JP7240946B2 (ja) * 2019-04-26 2023-03-16 株式会社トリケミカル研究所 酸化珪素膜形成方法
US11955318B2 (en) * 2021-03-12 2024-04-09 Applied Materials, Inc. Ash rate recovery method in plasma strip chamber
JP7854771B2 (ja) * 2021-06-22 2026-05-07 東京エレクトロン株式会社 プラズマ処理方法、プラズマ処理装置及びプラズマ処理システム

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JP2007123766A (ja) * 2005-10-31 2007-05-17 Tokyo Electron Ltd エッチング方法、プラズマ処理装置及び記憶媒体
KR101217778B1 (ko) 2007-06-08 2013-01-02 도쿄엘렉트론가부시키가이샤 패터닝 방법
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JP4733214B1 (ja) * 2010-04-02 2011-07-27 東京エレクトロン株式会社 マスクパターンの形成方法及び半導体装置の製造方法
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Also Published As

Publication number Publication date
US20160099131A1 (en) 2016-04-07
US9607811B2 (en) 2017-03-28
CN112133630B (zh) 2024-08-13
CN112133630A (zh) 2020-12-25
KR20160041764A (ko) 2016-04-18
KR102311575B1 (ko) 2021-10-08
EP3007205B1 (en) 2017-08-16
TW201626434A (zh) 2016-07-16
SG10201508134VA (en) 2016-05-30
TWI661464B (zh) 2019-06-01
CN105489483A (zh) 2016-04-13
EP3007205A1 (en) 2016-04-13
JP2016076621A (ja) 2016-05-12

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