JP6366393B2 - ウェーハの加工方法 - Google Patents

ウェーハの加工方法 Download PDF

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Publication number
JP6366393B2
JP6366393B2 JP2014144722A JP2014144722A JP6366393B2 JP 6366393 B2 JP6366393 B2 JP 6366393B2 JP 2014144722 A JP2014144722 A JP 2014144722A JP 2014144722 A JP2014144722 A JP 2014144722A JP 6366393 B2 JP6366393 B2 JP 6366393B2
Authority
JP
Japan
Prior art keywords
wafer
modified layer
chuck table
frame
tape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014144722A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016021501A (ja
Inventor
篤 服部
篤 服部
篤 植木
篤 植木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2014144722A priority Critical patent/JP6366393B2/ja
Priority to TW104118505A priority patent/TWI682501B/zh
Priority to KR1020150092517A priority patent/KR102356848B1/ko
Priority to CN201510408612.9A priority patent/CN105280543B/zh
Publication of JP2016021501A publication Critical patent/JP2016021501A/ja
Application granted granted Critical
Publication of JP6366393B2 publication Critical patent/JP6366393B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Laser Beam Processing (AREA)
JP2014144722A 2014-07-15 2014-07-15 ウェーハの加工方法 Active JP6366393B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014144722A JP6366393B2 (ja) 2014-07-15 2014-07-15 ウェーハの加工方法
TW104118505A TWI682501B (zh) 2014-07-15 2015-06-08 晶圓之加工方法
KR1020150092517A KR102356848B1 (ko) 2014-07-15 2015-06-29 웨이퍼의 가공 방법
CN201510408612.9A CN105280543B (zh) 2014-07-15 2015-07-13 晶片的加工方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014144722A JP6366393B2 (ja) 2014-07-15 2014-07-15 ウェーハの加工方法

Publications (2)

Publication Number Publication Date
JP2016021501A JP2016021501A (ja) 2016-02-04
JP6366393B2 true JP6366393B2 (ja) 2018-08-01

Family

ID=55149336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014144722A Active JP6366393B2 (ja) 2014-07-15 2014-07-15 ウェーハの加工方法

Country Status (4)

Country Link
JP (1) JP6366393B2 (ko)
KR (1) KR102356848B1 (ko)
CN (1) CN105280543B (ko)
TW (1) TWI682501B (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6844992B2 (ja) * 2016-11-24 2021-03-17 株式会社ディスコ ウェーハの加工方法
JP6870974B2 (ja) * 2016-12-08 2021-05-12 株式会社ディスコ 被加工物の分割方法
JP6649308B2 (ja) * 2017-03-22 2020-02-19 キオクシア株式会社 半導体装置およびその製造方法
JP6925717B2 (ja) * 2017-06-05 2021-08-25 株式会社ディスコ チップの製造方法
KR102048747B1 (ko) * 2018-04-16 2019-11-26 한국기계연구원 마이크로 소자 전사방법
JP2020102569A (ja) * 2018-12-25 2020-07-02 東レエンジニアリング株式会社 保持テーブル

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4734903B2 (ja) * 2004-11-29 2011-07-27 株式会社デンソー 半導体ウェハのダイシング方法
JP2007027562A (ja) 2005-07-20 2007-02-01 Disco Abrasive Syst Ltd ウエーハに装着された接着フィルムの破断方法
CN101297393B (zh) * 2005-11-24 2010-05-12 株式会社瑞萨科技 半导体器件的制造方法
JP2007235069A (ja) * 2006-03-03 2007-09-13 Tokyo Seimitsu Co Ltd ウェーハ加工方法
JP5054496B2 (ja) * 2007-11-30 2012-10-24 浜松ホトニクス株式会社 加工対象物切断方法
JP5495695B2 (ja) * 2009-09-30 2014-05-21 株式会社ディスコ ウエーハの加工方法
JP5800646B2 (ja) * 2011-09-01 2015-10-28 株式会社ディスコ チップ間隔維持方法
JP5800645B2 (ja) * 2011-09-01 2015-10-28 株式会社ディスコ チップ間隔維持方法
JP5964580B2 (ja) * 2011-12-26 2016-08-03 株式会社ディスコ ウェーハの加工方法
JP5988599B2 (ja) * 2012-02-09 2016-09-07 株式会社ディスコ 被加工物の分割方法

Also Published As

Publication number Publication date
JP2016021501A (ja) 2016-02-04
TW201604995A (zh) 2016-02-01
KR20160008961A (ko) 2016-01-25
KR102356848B1 (ko) 2022-01-28
CN105280543A (zh) 2016-01-27
TWI682501B (zh) 2020-01-11
CN105280543B (zh) 2020-01-31

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