JP6362560B2 - 半導体モジュール、電力変換装置および半導体モジュールの製造方法 - Google Patents
半導体モジュール、電力変換装置および半導体モジュールの製造方法 Download PDFInfo
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- JP6362560B2 JP6362560B2 JP2015060348A JP2015060348A JP6362560B2 JP 6362560 B2 JP6362560 B2 JP 6362560B2 JP 2015060348 A JP2015060348 A JP 2015060348A JP 2015060348 A JP2015060348 A JP 2015060348A JP 6362560 B2 JP6362560 B2 JP 6362560B2
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- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
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Description
図1〜図3を参照して、本発明の実施の形態1に係る半導体モジュールの構成について説明する。実施の形態1に係る半導体モジュール10は、第1電極端子1と、第2電極端子2と、第3電極端子3と、第4電極端子4と、第5電極端子5と、第6電極端子6と、台部7と、接続部8とを主に有する。図2に示されるように、第1電極端子1および第2電極端子2は、第1方向A1に沿って配置されている。第3電極端子3と、第4電極端子4と、第5電極端子5と、第6電極端子6とは、第1方向A1に対して垂直な第2方向A2に沿って配置されている。第1電極端子1は、第1方向A1と第2方向A2とが交差する位置に配置されている。
具体的には、半導体モジュール10は、たとえばスイッチング素子S1〜S6およびダイオードD1〜D6を有している。スイッチング素子S1〜S6は、たとえばIGBT(Insulated Gate Bipolar Transistor)などである。ダイオードD1〜D6は、たとえば還流ダイオードである。好ましくは、半導体素子は、珪素よりもバンドギャップの大きいワイドバンドギャップ半導体により構成されている。ワイドバンドギャップ半導体とは、たとえば窒化ガリウムまたは炭化珪素などである。図3に示されるように、IGBTなどの半導体素子は、たとえば第1電極端子1および第2電極端子2の各々と電気的に接続されている。
実施の形態1に係る半導体モジュール10によれば、第1電極端子1および第2電極端子2は、第1方向A1に沿って配置されている。第3電極端子3と、第4電極端子4と、第5電極端子5と、第6電極端子6とは、第1方向A1に対して垂直な第2方向A2に沿って配置されている。第1電極端子1は、第1方向A1と第2方向A2とが交差する位置に配置されている。第4電極端子4、第5電極端子5および第6電極端子6は、交流出力端子である。第1電極端子1は、陽極端子および陰極端子の一方である。第2電極端子2および第3電極端子3の少なくともいずれかは、陽極端子および陰極端子の他方である。これにより、第1方向A1に沿って陽極端子および陰極端子を配置することも可能であるし、第2方向A2に沿って陽極端子および陰極端子を配置することも可能である。そのため、半導体モジュールの配置の自由度を向上可能である。またバスバーの設計の自由度を向上可能である。よって、半導体モジュールの設計期間を短縮することができる。また半導体モジュールの標準化を図ることができる。
次に、本発明の実施の形態2に係る半導体モジュールの構成について説明する。実施の形態2に係る半導体モジュールは、第2電極端子2および第3電極端子3の双方は、直流陽極端子または直流陰極端子である点において実施の形態1に係る半導体モジュールと主に異なっており、他の構成については、実施の形態1に係る半導体モジュールとほぼ同様である。
次に、本発明の実施の形態3に係る半導体モジュールの構成について説明する。実施の形態3に係る半導体モジュールは、第2電極端子2および第3電極端子3の一方は、非接触端子である点において実施の形態1に係る半導体モジュールと主に異なっており、他の構成については、実施の形態1に係る半導体モジュールとほぼ同様である。
次に、本発明の実施の形態4に係る電力変換装置の構成について説明する。実施の形態4に係る電力変換装置100は、たとえば実施の形態1〜3に記載の半導体モジュール10を少なくとも1つ有する。
次に、本発明の実施の形態5に係る電力変換装置の構成について説明する。実施の形態5に係る電力変換装置100は、たとえば実施の形態1〜3に記載の半導体モジュール10を少なくとも1つ有する。電力変換装置100は、たとえばインバータ装置、コンバータ装置、サーボアンプまたは電源ユニットである。
次に、半導体モジュールの製造方法の一例について説明する。
Claims (7)
- 第1方向に沿って配置された第1電極端子および第2電極端子と、
前記第1方向に対して垂直な第2方向に沿って配置された、第3電極端子、第4電極端子、第5電極端子、および第6電極端子を備え、
前記第1電極端子は、前記第1方向と前記第2方向とが交差する位置に配置され、
前記第4電極端子、前記第5電極端子、および前記第6電極端子は、全てが交流出力端子あるいは全てが交流入力端子であり、
前記第1電極端子は、陽極端子および陰極端子のいずれかであり、
第1電極端子が、陽極端子の場合は、前記第2電極端子および前記第3電極端子のいずれか一方は、陰極端子であり、他方は、交流出力端子を除いた出力端子、あるいは未接続の端子であり、
第1電極端子が、陰極端子の場合は、前記第2電極端子および前記第3電極端子のいずれか一方は、陽極端子であり、他方は、交流出力端子を除いた出力端子、あるいは未接続の端子である、
半導体モジュール。 - 第1方向に沿って配置された第1電極端子および第2電極端子と、
前記第1方向に対して垂直な第2方向に沿って配置された、第3電極端子、第4電極端子、第5電極端子、および第6電極端子を備え、
前記第1電極端子は、前記第1方向と前記第2方向とが交差する位置に配置され、
前記第4電極端子、前記第5電極端子、および前記第6電極端子は、全てが交流出力端子あるいは全てが交流入力端子であり、
前記第1電極端子は、陽極端子および陰極端子のいずれか一方であり、前記第2電極端子および前記第3電極端子の双方は、前記陽極端子および前記陰極端子のいずれか他方である、
半導体モジュール。 - 前記第3電極端子は、前記第1電極端子に隣接して配置された、
請求項1または請求項2に記載の半導体モジュール。 - 前記第1方向における一方側の角部に前記第1電極端子、他方側の角部に前記第2電極端子が配置され、前記第2方向における一方側の角部に前記第1電極端子、他方側の角部に前記第6電極端子が配置された、
請求項1〜請求項3のいずれか1項に記載の半導体モジュール。 - 前記第1電極端子と電気的に接続された半導体素子をさらに備え、
前記半導体素子は、珪素よりもバンドギャップの大きいワイドバンドギャップ半導体により構成されている、
請求項1〜請求項4のいずれか1項に記載の半導体モジュール。 - 請求項1〜請求項5のいずれかに記載の半導体モジュールを少なくとも1つ備えた電力変換装置。
- 第1方向に沿って配置された第1電極端子および第2電極端子と、前記第1方向に対して垂直な第2方向に沿って配置された、第3電極端子、第4電極端子、第5電極端子、第6電極端子、および内部回路が設けられた台部を準備する工程と、
前記第1電極端子は、前記第1方向と前記第2方向とが交差する位置に配置され、
前記第4電極端子、前記第5電極端子、および前記第6電極端子は、全てが交流出力端子あるいは全てが交流入力端子であり、
前記第1電極端子は、陽極端子および陰極端子のいずれか一方であり、
第1電極端子が、陽極端子の場合は、前記第2電極端子および前記第3電極端子のいずれか一方は、陰極端子であり、他方は、交流出力端子を除いた出力端子、あるいは未接続の端子であり、
第1電極端子が、陰極端子の場合は、前記第2電極端子および前記第3電極端子いずれか一方は、陽極端子であり、他方は、交流出力端子を除いた出力端子、あるいは未接続の端子であり、
前記第2電極端子と、前記第3電極端子とは、電気的に絶縁されており、さらに、前記第2電極端子および前記第3電極端子の少なくともいずれかを、前記内部回路に電気的に接続する工程を備えた、半導体モジュールの製造方法。
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JPH10116961A (ja) * | 1996-10-08 | 1998-05-06 | Nippon Inter Electronics Corp | 複合半導体装置及びそれに使用する絶縁ケース |
JP3747699B2 (ja) * | 1999-08-06 | 2006-02-22 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
JP4975387B2 (ja) | 2006-07-18 | 2012-07-11 | 三菱電機株式会社 | 電力半導体装置 |
JP4875977B2 (ja) * | 2006-12-27 | 2012-02-15 | 日本インター株式会社 | パワーモジュール |
JP5550553B2 (ja) * | 2008-07-10 | 2014-07-16 | 三菱電機株式会社 | 電力用半導体モジュール |
JP2010147116A (ja) * | 2008-12-17 | 2010-07-01 | Mitsubishi Electric Corp | 半導体装置 |
JP2012079914A (ja) * | 2010-10-01 | 2012-04-19 | Mitsubishi Electric Corp | パワーモジュールおよびその製造方法 |
JP5673449B2 (ja) | 2011-09-01 | 2015-02-18 | 三菱電機株式会社 | 半導体装置 |
JP2013125848A (ja) * | 2011-12-14 | 2013-06-24 | Rohm Co Ltd | パワーモジュール半導体装置およびその製造方法 |
JP6413553B2 (ja) * | 2014-09-26 | 2018-10-31 | 富士電機株式会社 | パワー半導体モジュール装置 |
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CN106026692A (zh) | 2016-10-12 |
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