JP6331573B2 - アモルファス誘電体膜を有する電子部品 - Google Patents
アモルファス誘電体膜を有する電子部品 Download PDFInfo
- Publication number
- JP6331573B2 JP6331573B2 JP2014068512A JP2014068512A JP6331573B2 JP 6331573 B2 JP6331573 B2 JP 6331573B2 JP 2014068512 A JP2014068512 A JP 2014068512A JP 2014068512 A JP2014068512 A JP 2014068512A JP 6331573 B2 JP6331573 B2 JP 6331573B2
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- JP
- Japan
- Prior art keywords
- dielectric film
- dielectric
- amorphous
- thin film
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
- H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/10—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances metallic oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3208—Calcium oxide or oxide-forming salts thereof, e.g. lime
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3213—Strontium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3215—Barium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6562—Heating rate
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Composite Materials (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014068512A JP6331573B2 (ja) | 2013-06-20 | 2014-03-28 | アモルファス誘電体膜を有する電子部品 |
| KR1020140074515A KR101843718B1 (ko) | 2013-06-20 | 2014-06-18 | 아모르퍼스 유전체 막 및 전자 부품 |
| US14/310,212 US9382163B2 (en) | 2013-06-20 | 2014-06-20 | Amorphous dielectric film and electronic component |
| CN201410281264.9A CN104240942B (zh) | 2013-06-20 | 2014-06-20 | 非晶电介质膜以及电子部件 |
| KR1020160061298A KR101729929B1 (ko) | 2013-06-20 | 2016-05-19 | 아모르퍼스 유전체 막 및 전자 부품 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013129678 | 2013-06-20 | ||
| JP2013129678 | 2013-06-20 | ||
| JP2014068512A JP6331573B2 (ja) | 2013-06-20 | 2014-03-28 | アモルファス誘電体膜を有する電子部品 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017158568A Division JP6421847B2 (ja) | 2013-06-20 | 2017-08-21 | アモルファス誘電体膜および電子部品 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015025196A JP2015025196A (ja) | 2015-02-05 |
| JP2015025196A5 JP2015025196A5 (enExample) | 2016-12-01 |
| JP6331573B2 true JP6331573B2 (ja) | 2018-05-30 |
Family
ID=52111386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014068512A Active JP6331573B2 (ja) | 2013-06-20 | 2014-03-28 | アモルファス誘電体膜を有する電子部品 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9382163B2 (enExample) |
| JP (1) | JP6331573B2 (enExample) |
| KR (2) | KR101843718B1 (enExample) |
| CN (1) | CN104240942B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6451481B2 (ja) * | 2015-05-07 | 2019-01-16 | Tdk株式会社 | 誘電体膜および誘電体素子 |
| JP6249004B2 (ja) * | 2015-10-06 | 2017-12-20 | Tdk株式会社 | 誘電体組成物および電子部品 |
| JP6801517B2 (ja) * | 2017-03-02 | 2020-12-16 | Tdk株式会社 | 誘電体組成物および電子部品 |
| JP6938345B2 (ja) * | 2017-11-17 | 2021-09-22 | キヤノン株式会社 | トナー |
| CN111602216A (zh) * | 2018-01-19 | 2020-08-28 | 三菱电机株式会社 | 薄层电容器及薄层电容器的制造方法 |
| JP7310550B2 (ja) * | 2019-10-31 | 2023-07-19 | Tdk株式会社 | 誘電体膜、誘電体素子および電子回路基板 |
| CN113012939B (zh) * | 2021-02-22 | 2022-09-09 | 四川大学 | 高耐电压低损耗硅基薄膜电容器及其制备方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5324600A (en) * | 1976-08-19 | 1978-03-07 | Murata Manufacturing Co | Nonnreducing dielectric ceramic composition |
| JPH01315124A (ja) * | 1988-06-15 | 1989-12-20 | Matsushita Electric Ind Co Ltd | 薄膜コンデンサ |
| US5104690A (en) * | 1990-06-06 | 1992-04-14 | Spire Corporation | CVD thin film compounds |
| KR0162876B1 (ko) * | 1996-09-11 | 1998-11-16 | 박원훈 | 저온소결이 가능한 온도보상용 마이크로파 유전체 자기조성물 |
| JP3323801B2 (ja) * | 1998-02-05 | 2002-09-09 | 太陽誘電株式会社 | 磁器コンデンサ |
| TW396502B (en) * | 1998-10-27 | 2000-07-01 | Prec Instr Devl Ctr Nsc Execut | capacitor containing amorphous and poly-crystalline ferroelectric films, its fabrication, and method for forming the amorphous ferroelectric film |
| JP2000173349A (ja) * | 1998-12-02 | 2000-06-23 | Ube Ind Ltd | 誘電体薄膜とその製法およびコンデンサ |
| JP2001077309A (ja) * | 1999-08-31 | 2001-03-23 | Toshiba Corp | キャパシタ及びその製造方法 |
| US20030013319A1 (en) * | 2001-07-10 | 2003-01-16 | Motorola, Inc. | Semiconductor structure with selective doping and process for fabrication |
| JP4354224B2 (ja) * | 2003-06-30 | 2009-10-28 | 京セラ株式会社 | 誘電体磁器および積層型電子部品 |
| US20050063136A1 (en) * | 2003-09-18 | 2005-03-24 | Philofsky Elliott Malcolm | Decoupling capacitor and method |
| JP4670612B2 (ja) * | 2005-11-30 | 2011-04-13 | Tdk株式会社 | 誘電体素子とその製造方法 |
| DE102006017902B4 (de) * | 2006-04-18 | 2009-11-12 | Forschungszentrum Karlsruhe Gmbh | Keramisches Dielektrikum, Herstellverfahren für Dünn- und/oder Dickschichten enthaltend mindestens ein keramisches Dielektrikum und Verwendung davon |
| JP5003683B2 (ja) * | 2006-08-09 | 2012-08-15 | 株式会社村田製作所 | ガラスセラミック組成物、ガラスセラミック焼結体および積層セラミック電子部品 |
| JP2008258555A (ja) * | 2007-03-14 | 2008-10-23 | Hitachi Chem Co Ltd | 薄膜複合材料、薄膜複合材料の製造法及びこの薄膜複合材料を用いた電子部品用材料、電子部品用材料の製造法、電子部品、電子部品の製造法 |
| JP4374037B2 (ja) * | 2007-03-28 | 2009-12-02 | 株式会社東芝 | 不揮発性半導体メモリ及びその製造方法 |
| EP2411987A4 (en) * | 2009-03-23 | 2015-01-07 | Sba Materials Inc | NOVEL DIELECTRIC OXIDE FILMS AND MANUFACTURING METHOD THEREOF |
| US20130165313A1 (en) * | 2010-07-12 | 2013-06-27 | Takeshi Kijima | Ferroelectric film, sol-gel solution, film forming method and method for manufacturing ferroelectric film |
| CN102157682B (zh) * | 2010-11-25 | 2014-08-20 | 南京理工大学 | 一种单相铁电薄膜、制备方法及有效电阻调控方式 |
| CN102173794A (zh) * | 2011-02-25 | 2011-09-07 | 汕头高新区松田实业有限公司 | 一种可配合铜电极使用的圆片电容器陶瓷介质材料及其制备方法 |
| JP2013112569A (ja) * | 2011-11-29 | 2013-06-10 | Tdk Corp | 誘電体磁器組成物およびセラミック電子部品 |
-
2014
- 2014-03-28 JP JP2014068512A patent/JP6331573B2/ja active Active
- 2014-06-18 KR KR1020140074515A patent/KR101843718B1/ko active Active
- 2014-06-20 US US14/310,212 patent/US9382163B2/en active Active
- 2014-06-20 CN CN201410281264.9A patent/CN104240942B/zh active Active
-
2016
- 2016-05-19 KR KR1020160061298A patent/KR101729929B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20160065059A (ko) | 2016-06-08 |
| KR101843718B1 (ko) | 2018-03-30 |
| US20140378295A1 (en) | 2014-12-25 |
| CN104240942B (zh) | 2017-09-05 |
| CN104240942A (zh) | 2014-12-24 |
| KR101729929B1 (ko) | 2017-04-25 |
| JP2015025196A (ja) | 2015-02-05 |
| US9382163B2 (en) | 2016-07-05 |
| KR20140147733A (ko) | 2014-12-30 |
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