CN104240942B - 非晶电介质膜以及电子部件 - Google Patents
非晶电介质膜以及电子部件 Download PDFInfo
- Publication number
- CN104240942B CN104240942B CN201410281264.9A CN201410281264A CN104240942B CN 104240942 B CN104240942 B CN 104240942B CN 201410281264 A CN201410281264 A CN 201410281264A CN 104240942 B CN104240942 B CN 104240942B
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- Prior art keywords
- dielectric film
- film
- amorphous
- dielectric
- withstand voltage
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000013078 crystal Substances 0.000 claims description 12
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 abstract description 16
- 239000010408 film Substances 0.000 description 114
- 239000000758 substrate Substances 0.000 description 34
- 239000003990 capacitor Substances 0.000 description 31
- 239000010409 thin film Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000005259 measurement Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 238000004549 pulsed laser deposition Methods 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910007746 Zr—O Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910020068 MgAl Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
- H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/10—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances metallic oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3208—Calcium oxide or oxide-forming salts thereof, e.g. lime
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3213—Strontium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3215—Barium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6562—Heating rate
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Composite Materials (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-129678 | 2013-06-20 | ||
| JP2013129678 | 2013-06-20 | ||
| JP2014068512A JP6331573B2 (ja) | 2013-06-20 | 2014-03-28 | アモルファス誘電体膜を有する電子部品 |
| JP2014-068512 | 2014-03-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104240942A CN104240942A (zh) | 2014-12-24 |
| CN104240942B true CN104240942B (zh) | 2017-09-05 |
Family
ID=52111386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410281264.9A Active CN104240942B (zh) | 2013-06-20 | 2014-06-20 | 非晶电介质膜以及电子部件 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9382163B2 (enExample) |
| JP (1) | JP6331573B2 (enExample) |
| KR (2) | KR101843718B1 (enExample) |
| CN (1) | CN104240942B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6451481B2 (ja) * | 2015-05-07 | 2019-01-16 | Tdk株式会社 | 誘電体膜および誘電体素子 |
| JP6249004B2 (ja) * | 2015-10-06 | 2017-12-20 | Tdk株式会社 | 誘電体組成物および電子部品 |
| JP6801517B2 (ja) * | 2017-03-02 | 2020-12-16 | Tdk株式会社 | 誘電体組成物および電子部品 |
| JP6938345B2 (ja) * | 2017-11-17 | 2021-09-22 | キヤノン株式会社 | トナー |
| CN111602216A (zh) * | 2018-01-19 | 2020-08-28 | 三菱电机株式会社 | 薄层电容器及薄层电容器的制造方法 |
| JP7310550B2 (ja) * | 2019-10-31 | 2023-07-19 | Tdk株式会社 | 誘電体膜、誘電体素子および電子回路基板 |
| CN113012939B (zh) * | 2021-02-22 | 2022-09-09 | 四川大学 | 高耐电压低损耗硅基薄膜电容器及其制备方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5324600A (en) * | 1976-08-19 | 1978-03-07 | Murata Manufacturing Co | Nonnreducing dielectric ceramic composition |
| JPH01315124A (ja) * | 1988-06-15 | 1989-12-20 | Matsushita Electric Ind Co Ltd | 薄膜コンデンサ |
| US5104690A (en) * | 1990-06-06 | 1992-04-14 | Spire Corporation | CVD thin film compounds |
| KR0162876B1 (ko) * | 1996-09-11 | 1998-11-16 | 박원훈 | 저온소결이 가능한 온도보상용 마이크로파 유전체 자기조성물 |
| JP3323801B2 (ja) * | 1998-02-05 | 2002-09-09 | 太陽誘電株式会社 | 磁器コンデンサ |
| TW396502B (en) * | 1998-10-27 | 2000-07-01 | Prec Instr Devl Ctr Nsc Execut | capacitor containing amorphous and poly-crystalline ferroelectric films, its fabrication, and method for forming the amorphous ferroelectric film |
| JP2000173349A (ja) * | 1998-12-02 | 2000-06-23 | Ube Ind Ltd | 誘電体薄膜とその製法およびコンデンサ |
| JP2001077309A (ja) * | 1999-08-31 | 2001-03-23 | Toshiba Corp | キャパシタ及びその製造方法 |
| US20030013319A1 (en) * | 2001-07-10 | 2003-01-16 | Motorola, Inc. | Semiconductor structure with selective doping and process for fabrication |
| JP4354224B2 (ja) * | 2003-06-30 | 2009-10-28 | 京セラ株式会社 | 誘電体磁器および積層型電子部品 |
| US20050063136A1 (en) * | 2003-09-18 | 2005-03-24 | Philofsky Elliott Malcolm | Decoupling capacitor and method |
| JP4670612B2 (ja) * | 2005-11-30 | 2011-04-13 | Ｔｄｋ株式会社 | 誘電体素子とその製造方法 |
| DE102006017902B4 (de) * | 2006-04-18 | 2009-11-12 | Forschungszentrum Karlsruhe Gmbh | Keramisches Dielektrikum, Herstellverfahren für Dünn- und/oder Dickschichten enthaltend mindestens ein keramisches Dielektrikum und Verwendung davon |
| JP5003683B2 (ja) * | 2006-08-09 | 2012-08-15 | 株式会社村田製作所 | ガラスセラミック組成物、ガラスセラミック焼結体および積層セラミック電子部品 |
| JP2008258555A (ja) * | 2007-03-14 | 2008-10-23 | Hitachi Chem Co Ltd | 薄膜複合材料、薄膜複合材料の製造法及びこの薄膜複合材料を用いた電子部品用材料、電子部品用材料の製造法、電子部品、電子部品の製造法 |
| JP4374037B2 (ja) * | 2007-03-28 | 2009-12-02 | 株式会社東芝 | 不揮発性半導体メモリ及びその製造方法 |
| EP2411987A4 (en) * | 2009-03-23 | 2015-01-07 | Sba Materials Inc | NOVEL DIELECTRIC OXIDE FILMS AND MANUFACTURING METHOD THEREOF |
| US20130165313A1 (en) * | 2010-07-12 | 2013-06-27 | Takeshi Kijima | Ferroelectric film, sol-gel solution, film forming method and method for manufacturing ferroelectric film |
| CN102157682B (zh) * | 2010-11-25 | 2014-08-20 | 南京理工大学 | 一种单相铁电薄膜、制备方法及有效电阻调控方式 |
| CN102173794A (zh) * | 2011-02-25 | 2011-09-07 | 汕头高新区松田实业有限公司 | 一种可配合铜电极使用的圆片电容器陶瓷介质材料及其制备方法 |
| JP2013112569A (ja) * | 2011-11-29 | 2013-06-10 | Tdk Corp | 誘電体磁器組成物およびセラミック電子部品 |
-
2014
- 2014-03-28 JP JP2014068512A patent/JP6331573B2/ja active Active
- 2014-06-18 KR KR1020140074515A patent/KR101843718B1/ko active Active
- 2014-06-20 US US14/310,212 patent/US9382163B2/en active Active
- 2014-06-20 CN CN201410281264.9A patent/CN104240942B/zh active Active
-
2016
- 2016-05-19 KR KR1020160061298A patent/KR101729929B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20160065059A (ko) | 2016-06-08 |
| KR101843718B1 (ko) | 2018-03-30 |
| US20140378295A1 (en) | 2014-12-25 |
| CN104240942A (zh) | 2014-12-24 |
| JP6331573B2 (ja) | 2018-05-30 |
| KR101729929B1 (ko) | 2017-04-25 |
| JP2015025196A (ja) | 2015-02-05 |
| US9382163B2 (en) | 2016-07-05 |
| KR20140147733A (ko) | 2014-12-30 |
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