KR101843718B1 - 아모르퍼스 유전체 막 및 전자 부품 - Google Patents

아모르퍼스 유전체 막 및 전자 부품 Download PDF

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KR101843718B1
KR101843718B1 KR1020140074515A KR20140074515A KR101843718B1 KR 101843718 B1 KR101843718 B1 KR 101843718B1 KR 1020140074515 A KR1020140074515 A KR 1020140074515A KR 20140074515 A KR20140074515 A KR 20140074515A KR 101843718 B1 KR101843718 B1 KR 101843718B1
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dielectric film
dielectric
amorphous
thin film
film
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KR20140147733A (ko
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도시히코 가네코
사오리 다케다
유키 야마시타
준이치 야마자키
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티디케이가부시기가이샤
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    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/48Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
    • C04B35/49Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/10Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances metallic oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/018Dielectrics
    • H01G4/06Solid dielectrics
    • H01G4/08Inorganic dielectrics
    • H01G4/12Ceramic dielectrics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/33Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/60Capacitors
    • H10D1/68Capacitors having no potential barriers
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    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
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    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3213Strontium oxides or oxide-forming salts thereof
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    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3215Barium oxides or oxide-forming salts thereof
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C04B2235/6562Heating rate

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Composite Materials (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Ceramic Capacitors (AREA)
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KR1020140074515A 2013-06-20 2014-06-18 아모르퍼스 유전체 막 및 전자 부품 Active KR101843718B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2013-129678 2013-06-20
JP2013129678 2013-06-20
JPJP-P-2014-068512 2014-03-28
JP2014068512A JP6331573B2 (ja) 2013-06-20 2014-03-28 アモルファス誘電体膜を有する電子部品

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KR1020160061298A Division KR101729929B1 (ko) 2013-06-20 2016-05-19 아모르퍼스 유전체 막 및 전자 부품

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KR20140147733A KR20140147733A (ko) 2014-12-30
KR101843718B1 true KR101843718B1 (ko) 2018-03-30

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KR1020160061298A Active KR101729929B1 (ko) 2013-06-20 2016-05-19 아모르퍼스 유전체 막 및 전자 부품

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US (1) US9382163B2 (enExample)
JP (1) JP6331573B2 (enExample)
KR (2) KR101843718B1 (enExample)
CN (1) CN104240942B (enExample)

Families Citing this family (7)

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Publication number Priority date Publication date Assignee Title
JP6451481B2 (ja) * 2015-05-07 2019-01-16 Tdk株式会社 誘電体膜および誘電体素子
JP6249004B2 (ja) * 2015-10-06 2017-12-20 Tdk株式会社 誘電体組成物および電子部品
JP6801517B2 (ja) * 2017-03-02 2020-12-16 Tdk株式会社 誘電体組成物および電子部品
JP6938345B2 (ja) * 2017-11-17 2021-09-22 キヤノン株式会社 トナー
KR102434565B1 (ko) * 2018-01-19 2022-08-19 미쓰비시덴키 가부시키가이샤 박층 캐패시터 및 박층 캐패시터의 제조 방법
JP7310550B2 (ja) * 2019-10-31 2023-07-19 Tdk株式会社 誘電体膜、誘電体素子および電子回路基板
CN113012939B (zh) * 2021-02-22 2022-09-09 四川大学 高耐电压低损耗硅基薄膜电容器及其制备方法

Citations (1)

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US9382163B2 (en) 2016-07-05
KR20140147733A (ko) 2014-12-30
JP2015025196A (ja) 2015-02-05
CN104240942A (zh) 2014-12-24
KR20160065059A (ko) 2016-06-08
US20140378295A1 (en) 2014-12-25
KR101729929B1 (ko) 2017-04-25
JP6331573B2 (ja) 2018-05-30
CN104240942B (zh) 2017-09-05

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