JP6254347B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6254347B2 JP6254347B2 JP2013005705A JP2013005705A JP6254347B2 JP 6254347 B2 JP6254347 B2 JP 6254347B2 JP 2013005705 A JP2013005705 A JP 2013005705A JP 2013005705 A JP2013005705 A JP 2013005705A JP 6254347 B2 JP6254347 B2 JP 6254347B2
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- Prior art keywords
- film
- insulating film
- transistor
- oxide semiconductor
- electrode layer
- Prior art date
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- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000001307 laser spectroscopy Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004335 scaling law Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000001350 scanning transmission electron microscopy Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Description
本実施の形態では、半導体装置及び半導体装置の作製方法の一形態を、図1乃至図3を用いて説明する。本実施の形態では、半導体装置の一例として酸化物半導体膜を有するトランジスタを示す。
本実施の形態では、半導体装置及び半導体装置の作製方法の一形態を、図17乃至図20を用いて説明する。本実施の形態では、半導体装置の一例として酸化物半導体膜を有するトランジスタを示す。
本実施の形態では、本明細書に示すトランジスタを使用し、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置の一例を、図面を用いて説明する。
本実施の形態においては、実施の形態1又は実施の形態2に示すトランジスタを使用し、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置について、実施の形態3に示した構成と異なる構成について、図6及び図7を用いて説明を行う。
本実施の形態では、先の実施の形態で示した半導体装置を携帯電話、スマートフォン、電子書籍などの携帯機器に応用した場合の例を図8乃至図11を用いて説明する。
106 素子分離絶縁層
108 ゲート絶縁膜
110 ゲート電極
116 チャネル形成領域
120 不純物領域
124 金属間化合物領域
128 絶縁層
130 絶縁層
135 層間絶縁膜
136a 側壁絶縁層
136b 側壁絶縁層
142a 電極層
142b 電極層
144 酸化物半導体膜
146 ゲート絶縁膜
148 ゲート電極
150 絶縁膜
152 絶縁膜
153 導電層
156 配線
160 トランジスタ
162 トランジスタ
164 容量素子
250 メモリセル
251 メモリセルアレイ
251a メモリセルアレイ
251b メモリセルアレイ
253 周辺回路
254 容量素子
256 絶縁膜
258 絶縁膜
260 配線
262 導電層
400 基板
401 ゲート電極層
402 ゲート絶縁膜
402a ゲート絶縁膜
402b ゲート絶縁膜
403 酸化物半導体膜
403a ソース領域
403b ドレイン領域
403c チャネル形成領域
404a 低抵抗領域
404b 低抵抗領域
405a ソース電極層
405b ドレイン電極層
407 絶縁膜
409 チャネル形成領域
410 絶縁膜
412 側壁絶縁層
412a 側壁絶縁層
412b 側壁絶縁層
413 絶縁膜
414 絶縁膜
415 層間絶縁膜
420 トランジスタ
422 トランジスタ
423 側壁層
423a 側壁層
423b 側壁層
424 トランジスタ
426 トランジスタ
428 トランジスタ
430 トランジスタ
436 絶縁膜
436a 絶縁膜
436b 絶縁膜
440a トランジスタ
440b トランジスタ
440c トランジスタ
440d トランジスタ
440e トランジスタ
440f トランジスタ
495a 配線層
495b 配線層
801 トランジスタ
803 トランジスタ
804 トランジスタ
805 トランジスタ
806 トランジスタ
807 Xデコーダー
808 Yデコーダー
811 トランジスタ
812 保持容量
813 Xデコーダー
814 Yデコーダー
901 RF回路
902 アナログベースバンド回路
903 デジタルベースバンド回路
904 バッテリー
905 電源回路
906 アプリケーションプロセッサ
907 CPU
908 DSP
910 フラッシュメモリ
911 ディスプレイコントローラ
912 メモリ回路
913 ディスプレイ
914 表示部
915 ソースドライバ
916 ゲートドライバ
917 音声回路
918 キーボード
919 タッチセンサ
950 メモリ回路
951 メモリコントローラ
952 メモリ
953 メモリ
954 スイッチ
955 スイッチ
956 ディスプレイコントローラ
957 ディスプレイ
1001 バッテリー
1002 電源回路
1003 マイクロプロセッサ
1004 フラッシュメモリ
1005 音声回路
1006 キーボード
1007 メモリ回路
1008 タッチパネル
1009 ディスプレイ
1010 ディスプレイコントローラ
Claims (11)
- トランジスタを有し、
前記トランジスタは、酸化物半導体膜と、第1のゲート絶縁膜と、第2のゲート絶縁膜と、ゲート電極層とを有し、
前記酸化物半導体膜は、ソース領域と、ドレイン領域と、チャネル形成領域を有し、
前記チャネル形成領域は、前記ソース領域と前記ドレイン領域の間にあり、
前記ソース領域は、前記ソース領域の側面でのみソース電極と接し、
前記ドレイン領域は、前記ドレイン領域の側面でのみドレイン電極と接し、
前記第1のゲート絶縁膜は前記酸化物半導体膜と接し、
前記第2のゲート絶縁膜は前記第1のゲート絶縁膜と接し、
前記ゲート電極層は前記第2のゲート絶縁膜と接し、
前記トランジスタのチャネル長は、5nm以上60nm未満であり、
前記第1のゲート絶縁膜の膜厚を、窒素を含む酸化シリコンとして換算した膜厚は、5nm以上50nm以下であり、
前記第2のゲート絶縁膜は3nm以上30nm以下の膜厚であり、
前記第2のゲート絶縁膜は前記第1のゲート絶縁膜よりも酸素に対して高いブロック効果を有し、
前記ソース領域および前記ドレイン領域の抵抗率は1.9×10−5Ω・m以上4.8×10−3Ω・m以下であることを特徴とする半導体装置。 - 請求項1において、
前記第2のゲート絶縁膜は、酸化アルミニウム膜を含むことを特徴とする半導体装置。 - トランジスタを有し、
前記トランジスタは、酸化物半導体膜と、ゲート絶縁膜と、ゲート電極層と、層間絶縁膜とを有し、
前記酸化物半導体膜は、ソース領域と、ドレイン領域と、チャネル形成領域を有し、
前記チャネル形成領域は、前記ソース領域と前記ドレイン領域の間にあり、
前記ソース領域は、前記ソース領域の側面でのみソース電極と接し、
前記ドレイン領域は、前記ドレイン領域の側面でのみドレイン電極と接し、
前記ゲート絶縁膜は前記酸化物半導体膜と接し、
前記ゲート電極層は前記ゲート絶縁膜と接し、
前記層間絶縁膜は前記ゲート電極層と接し、
前記トランジスタのチャネル長は、5nm以上60nm未満であり、
前記ゲート絶縁膜の膜厚を、窒素を含む酸化シリコンとして換算した膜厚は、5nm以上50nm以下であり、
前記層間絶縁膜は3nm以上30nm以下の膜厚であり、
前記層間絶縁膜は前記ゲート絶縁膜よりも酸素に対して高いブロック効果を有し、
前記ソース領域および前記ドレイン領域の抵抗率は1.9×10−5Ω・m以上4.8×10−3Ω・m以下であることを特徴とする半導体装置。 - 請求項3において、
前記層間絶縁膜は、酸化アルミニウム膜を含むことを特徴とする半導体装置。 - トランジスタを有し、
前記トランジスタは、酸化物半導体膜と、ゲート絶縁膜と、ゲート電極層とを有し、
前記酸化物半導体膜は、ソース領域と、ドレイン領域と、チャネル形成領域を有し、
前記チャネル形成領域は、前記ソース領域と前記ドレイン領域の間にあり、
前記ソース領域は、前記ソース領域の側面でのみソース電極と接し、
前記ドレイン領域は、前記ドレイン領域の側面でのみドレイン電極と接し、
前記ゲート絶縁膜は前記酸化物半導体膜と接し、
前記ゲート電極層は前記ゲート絶縁膜と接し、
前記トランジスタのチャネル長は、5nm以上60nm未満であり、
前記ゲート絶縁膜の膜厚を、窒素を含む酸化シリコンとして換算した膜厚は、5nm以上50nm以下であり、
前記ソース領域および前記ドレイン領域の抵抗率は1.9×10−5Ω・m以上4.8×10−3Ω・m以下である、ことを特徴とする半導体装置。 - 請求項1乃至5のいずれか一において、
前記ソース領域および前記ドレイン領域は1.3×1019cm−3以上1.6×1020cm−3以下の濃度のドーパントを含有していることを特徴とする半導体装置。 - 請求項6において、
前記ドーパントは、窒素(N)、リン(P)、砒素(As)、およびアンチモン(Sb)、ホウ素(B)、アルミニウム(Al)、アルゴン(Ar)、ヘリウム(He)、ネオン(Ne)、インジウム(In)、フッ素(F)、塩素(Cl)、チタン(Ti)、及び亜鉛(Zn)の少なくとも一以上を含むことを特徴とする半導体装置。 - 請求項1乃至7のいずれか一において、
前記ゲート電極層の側壁に、前記ソース領域または前記ドレイン領域と重畳する側壁絶縁層を有することを特徴とする半導体装置。 - 請求項1乃至8のいずれか一において、
前記チャネル形成領域は、非単結晶であって、ab面に垂直な方向から見て、三角形、六角形、正三角形、または正六角形の原子配列を有し、かつ、c軸方向に金属原子が層状に配列した相、またはc軸方向に金属原子と酸素原子が層状に配列した相を有することを特徴とする半導体装置。 - 請求項1乃至9のいずれか一において、
前記酸化物半導体膜は、少なくともインジウムを含むことを特徴とする半導体装置。 - 請求項1乃至10のいずれか一において、
前記酸化物半導体膜は、少なくともインジウム、ガリウム及び亜鉛を含むことを特徴とする半導体装置。
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