JP6245678B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP6245678B2
JP6245678B2 JP2012176435A JP2012176435A JP6245678B2 JP 6245678 B2 JP6245678 B2 JP 6245678B2 JP 2012176435 A JP2012176435 A JP 2012176435A JP 2012176435 A JP2012176435 A JP 2012176435A JP 6245678 B2 JP6245678 B2 JP 6245678B2
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Japan
Prior art keywords
laser pulse
laser
pulse
region
depth
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JP2012176435A
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English (en)
Japanese (ja)
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JP2014036110A (ja
JP2014036110A5 (enExample
Inventor
若林　直木
直木 若林
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Sumitomo Heavy Industries Ltd
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Sumitomo Heavy Industries Ltd
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Priority to JP2012176435A priority Critical patent/JP6245678B2/ja
Application filed by Sumitomo Heavy Industries Ltd filed Critical Sumitomo Heavy Industries Ltd
Priority to PCT/JP2013/067255 priority patent/WO2014024589A1/ja
Priority to EP13827989.8A priority patent/EP2884522B1/en
Priority to CN201380024316.8A priority patent/CN104508796B/zh
Priority to KR1020147031393A priority patent/KR20140143836A/ko
Priority to TW102126454A priority patent/TWI523083B/zh
Publication of JP2014036110A publication Critical patent/JP2014036110A/ja
Priority to US14/613,775 priority patent/US9653299B2/en
Publication of JP2014036110A5 publication Critical patent/JP2014036110A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species

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  • Recrystallisation Techniques (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
JP2012176435A 2012-08-08 2012-08-08 半導体装置の製造方法 Active JP6245678B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2012176435A JP6245678B2 (ja) 2012-08-08 2012-08-08 半導体装置の製造方法
EP13827989.8A EP2884522B1 (en) 2012-08-08 2013-06-24 Semiconductor device producing method
CN201380024316.8A CN104508796B (zh) 2012-08-08 2013-06-24 半导体装置的制造方法
KR1020147031393A KR20140143836A (ko) 2012-08-08 2013-06-24 반도체 장치의 제조방법
PCT/JP2013/067255 WO2014024589A1 (ja) 2012-08-08 2013-06-24 半導体装置の製造方法
TW102126454A TWI523083B (zh) 2012-08-08 2013-07-24 Semiconductor device manufacturing method
US14/613,775 US9653299B2 (en) 2012-08-08 2015-02-04 Semiconductor device producing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012176435A JP6245678B2 (ja) 2012-08-08 2012-08-08 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2014036110A JP2014036110A (ja) 2014-02-24
JP2014036110A5 JP2014036110A5 (enExample) 2015-07-30
JP6245678B2 true JP6245678B2 (ja) 2017-12-13

Family

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JP2012176435A Active JP6245678B2 (ja) 2012-08-08 2012-08-08 半導体装置の製造方法

Country Status (7)

Country Link
US (1) US9653299B2 (enExample)
EP (1) EP2884522B1 (enExample)
JP (1) JP6245678B2 (enExample)
KR (1) KR20140143836A (enExample)
CN (1) CN104508796B (enExample)
TW (1) TWI523083B (enExample)
WO (1) WO2014024589A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI545627B (zh) * 2012-06-13 2016-08-11 住友重機械工業股份有限公司 半導體裝置的製造方法及雷射退火裝置
DE102014103749A1 (de) * 2013-12-18 2015-06-18 Rofin-Baasel Lasertech Gmbh & Co. Kg Verfahren und Vorrichtung zur Bearbeitung eines Werkstücks
TW201528379A (zh) * 2013-12-20 2015-07-16 應用材料股份有限公司 雙波長退火方法與設備
JP6320799B2 (ja) * 2014-03-07 2018-05-09 住友重機械工業株式会社 半導体装置の製造方法
JP6338512B2 (ja) * 2014-11-17 2018-06-06 住友重機械工業株式会社 半導体装置の製造方法及びレーザアニール装置
JP6497903B2 (ja) * 2014-11-25 2019-04-10 住友重機械工業株式会社 レーザアニール装置
JP6771810B2 (ja) * 2015-04-20 2020-10-21 住友重機械工業株式会社 レーザ加工装置
JP6732371B2 (ja) * 2016-03-28 2020-07-29 住友重機械工業株式会社 レーザアニール装置
DE102016008509A1 (de) * 2016-07-13 2018-01-18 Siltectra Gmbh Laserkonditionierung von Festkörpern mit Vorwissen aus vorherigen Bearbeitungsschritten
JP2018107190A (ja) 2016-12-22 2018-07-05 トヨタ自動車株式会社 半導体装置の製造方法
WO2018179798A1 (ja) * 2017-03-29 2018-10-04 富士電機株式会社 半導体装置の製造方法
JP7091714B2 (ja) * 2018-03-01 2022-06-28 株式会社デンソー 半導体装置
EP3667704A1 (en) * 2018-12-13 2020-06-17 Laser Systems & Solutions of Europe Method for thermally processing a substrate and associated system
JP7428481B2 (ja) * 2019-06-07 2024-02-06 住友重機械工業株式会社 レーザアニール方法及びレーザ制御装置
CN115803852B (zh) 2020-06-18 2026-02-03 住友重机械工业株式会社 激光退火装置的控制装置及激光退火方法
CN112435921B (zh) * 2020-11-05 2024-05-17 北京华卓精科科技股份有限公司 一种功率器件的激光退火方法和激光退火系统

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004207691A (ja) * 2002-12-11 2004-07-22 Sharp Corp 半導体薄膜の製造方法、その製造方法により得られる半導体薄膜、その半導体薄膜を用いる半導体素子および半導体薄膜の製造装置
JP4373115B2 (ja) * 2003-04-04 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4590880B2 (ja) * 2003-06-24 2010-12-01 富士電機システムズ株式会社 半導体素子の製造方法
DE102004030268B4 (de) 2003-06-24 2013-02-21 Fuji Electric Co., Ltd Verfahren zum Herstellen eines Halbleiterelements
JP4171399B2 (ja) * 2003-10-30 2008-10-22 住友重機械工業株式会社 レーザ照射装置
US7491909B2 (en) 2004-03-31 2009-02-17 Imra America, Inc. Pulsed laser processing with controlled thermal and physical alterations
JP2006351659A (ja) * 2005-06-14 2006-12-28 Toyota Motor Corp 半導体装置の製造方法
JP4117020B2 (ja) 2005-08-03 2008-07-09 フェトン株式会社 半導体装置の製造方法および半導体装置の製造装置
JP2007123300A (ja) * 2005-10-25 2007-05-17 Toyota Motor Corp 不純物活性化方法、レーザアニール装置、半導体装置とその製造方法
DE102008003953A1 (de) 2007-02-28 2008-09-04 Fuji Electric Device Technology Co. Ltd. Verfahren zur Herstellung eines Halbleiterelements
JP5105984B2 (ja) 2007-07-26 2012-12-26 住友重機械工業株式会社 ビーム照射装置、及び、レーザアニール方法
JP2010171057A (ja) 2009-01-20 2010-08-05 Denso Corp 半導体装置およびその製造方法
JP4678700B1 (ja) 2009-11-30 2011-04-27 株式会社日本製鋼所 レーザアニール装置およびレーザアニール方法
JP5307093B2 (ja) * 2010-08-23 2013-10-02 株式会社日本製鋼所 半導体デバイスの製造方法
JP5641965B2 (ja) * 2011-02-09 2014-12-17 住友重機械工業株式会社 レーザアニール方法及びレーザアニール装置
TWI545627B (zh) * 2012-06-13 2016-08-11 住友重機械工業股份有限公司 半導體裝置的製造方法及雷射退火裝置
JP5963701B2 (ja) * 2013-03-27 2016-08-03 住友重機械工業株式会社 半導体アニール装置及び温度測定方法

Also Published As

Publication number Publication date
CN104508796B (zh) 2017-07-11
US20150170918A1 (en) 2015-06-18
JP2014036110A (ja) 2014-02-24
EP2884522A4 (en) 2016-05-11
KR20140143836A (ko) 2014-12-17
TWI523083B (zh) 2016-02-21
EP2884522B1 (en) 2019-04-10
TW201407672A (zh) 2014-02-16
EP2884522A1 (en) 2015-06-17
WO2014024589A1 (ja) 2014-02-13
US9653299B2 (en) 2017-05-16
CN104508796A (zh) 2015-04-08

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