CN104508796B - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN104508796B
CN104508796B CN201380024316.8A CN201380024316A CN104508796B CN 104508796 B CN104508796 B CN 104508796B CN 201380024316 A CN201380024316 A CN 201380024316A CN 104508796 B CN104508796 B CN 104508796B
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laser pulse
laser
pulse
semiconductor substrate
region
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CN104508796A (zh
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若林直木
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Sumitomo Heavy Industries Ltd
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Sumitomo Heavy Industries Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants

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  • Recrystallisation Techniques (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
CN201380024316.8A 2012-08-08 2013-06-24 半导体装置的制造方法 Active CN104508796B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012176435A JP6245678B2 (ja) 2012-08-08 2012-08-08 半導体装置の製造方法
JP2012-176435 2012-08-08
PCT/JP2013/067255 WO2014024589A1 (ja) 2012-08-08 2013-06-24 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
CN104508796A CN104508796A (zh) 2015-04-08
CN104508796B true CN104508796B (zh) 2017-07-11

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US (1) US9653299B2 (enExample)
EP (1) EP2884522B1 (enExample)
JP (1) JP6245678B2 (enExample)
KR (1) KR20140143836A (enExample)
CN (1) CN104508796B (enExample)
TW (1) TWI523083B (enExample)
WO (1) WO2014024589A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI545627B (zh) * 2012-06-13 2016-08-11 住友重機械工業股份有限公司 半導體裝置的製造方法及雷射退火裝置
DE102014103749A1 (de) * 2013-12-18 2015-06-18 Rofin-Baasel Lasertech Gmbh & Co. Kg Verfahren und Vorrichtung zur Bearbeitung eines Werkstücks
TW201528379A (zh) * 2013-12-20 2015-07-16 應用材料股份有限公司 雙波長退火方法與設備
JP6320799B2 (ja) * 2014-03-07 2018-05-09 住友重機械工業株式会社 半導体装置の製造方法
JP6338512B2 (ja) * 2014-11-17 2018-06-06 住友重機械工業株式会社 半導体装置の製造方法及びレーザアニール装置
JP6497903B2 (ja) * 2014-11-25 2019-04-10 住友重機械工業株式会社 レーザアニール装置
JP6771810B2 (ja) * 2015-04-20 2020-10-21 住友重機械工業株式会社 レーザ加工装置
JP6732371B2 (ja) * 2016-03-28 2020-07-29 住友重機械工業株式会社 レーザアニール装置
DE102016008509A1 (de) * 2016-07-13 2018-01-18 Siltectra Gmbh Laserkonditionierung von Festkörpern mit Vorwissen aus vorherigen Bearbeitungsschritten
JP2018107190A (ja) 2016-12-22 2018-07-05 トヨタ自動車株式会社 半導体装置の製造方法
CN109643646B (zh) * 2017-03-29 2023-05-05 富士电机株式会社 半导体装置的制造方法
JP7091714B2 (ja) * 2018-03-01 2022-06-28 株式会社デンソー 半導体装置
EP3667704A1 (en) * 2018-12-13 2020-06-17 Laser Systems & Solutions of Europe Method for thermally processing a substrate and associated system
JP7428481B2 (ja) * 2019-06-07 2024-02-06 住友重機械工業株式会社 レーザアニール方法及びレーザ制御装置
WO2021256434A1 (ja) 2020-06-18 2021-12-23 住友重機械工業株式会社 レーザアニール装置の制御装置及びレーザアニール方法
CN112435921B (zh) * 2020-11-05 2024-05-17 北京华卓精科科技股份有限公司 一种功率器件的激光退火方法和激光退火系统

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004207691A (ja) * 2002-12-11 2004-07-22 Sharp Corp 半導体薄膜の製造方法、その製造方法により得られる半導体薄膜、その半導体薄膜を用いる半導体素子および半導体薄膜の製造装置
US20050059263A1 (en) * 2003-06-24 2005-03-17 Haruo Nakazawa Method of manufacturing semiconductor element
JP2007123300A (ja) * 2005-10-25 2007-05-17 Toyota Motor Corp 不純物活性化方法、レーザアニール装置、半導体装置とその製造方法
CN101256948A (zh) * 2007-02-28 2008-09-03 富士电机电子技术株式会社 半导体元件的制造方法
JP4171399B2 (ja) * 2003-10-30 2008-10-22 住友重機械工業株式会社 レーザ照射装置
US20090227121A1 (en) * 2005-08-03 2009-09-10 Phoeton Corp. Semiconductor device manufacturing method and semiconductor device manufacturing system
WO2011065094A1 (ja) * 2009-11-30 2011-06-03 株式会社日本製鋼所 レーザアニール装置およびレーザアニール方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4373115B2 (ja) * 2003-04-04 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4590880B2 (ja) * 2003-06-24 2010-12-01 富士電機システムズ株式会社 半導体素子の製造方法
US7491909B2 (en) 2004-03-31 2009-02-17 Imra America, Inc. Pulsed laser processing with controlled thermal and physical alterations
JP2006351659A (ja) * 2005-06-14 2006-12-28 Toyota Motor Corp 半導体装置の製造方法
JP5105984B2 (ja) 2007-07-26 2012-12-26 住友重機械工業株式会社 ビーム照射装置、及び、レーザアニール方法
JP2010171057A (ja) 2009-01-20 2010-08-05 Denso Corp 半導体装置およびその製造方法
JP5307093B2 (ja) 2010-08-23 2013-10-02 株式会社日本製鋼所 半導体デバイスの製造方法
JP5641965B2 (ja) * 2011-02-09 2014-12-17 住友重機械工業株式会社 レーザアニール方法及びレーザアニール装置
TWI545627B (zh) * 2012-06-13 2016-08-11 住友重機械工業股份有限公司 半導體裝置的製造方法及雷射退火裝置
JP5963701B2 (ja) * 2013-03-27 2016-08-03 住友重機械工業株式会社 半導体アニール装置及び温度測定方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004207691A (ja) * 2002-12-11 2004-07-22 Sharp Corp 半導体薄膜の製造方法、その製造方法により得られる半導体薄膜、その半導体薄膜を用いる半導体素子および半導体薄膜の製造装置
US20050059263A1 (en) * 2003-06-24 2005-03-17 Haruo Nakazawa Method of manufacturing semiconductor element
JP4171399B2 (ja) * 2003-10-30 2008-10-22 住友重機械工業株式会社 レーザ照射装置
US20090227121A1 (en) * 2005-08-03 2009-09-10 Phoeton Corp. Semiconductor device manufacturing method and semiconductor device manufacturing system
JP2007123300A (ja) * 2005-10-25 2007-05-17 Toyota Motor Corp 不純物活性化方法、レーザアニール装置、半導体装置とその製造方法
CN101256948A (zh) * 2007-02-28 2008-09-03 富士电机电子技术株式会社 半导体元件的制造方法
WO2011065094A1 (ja) * 2009-11-30 2011-06-03 株式会社日本製鋼所 レーザアニール装置およびレーザアニール方法

Also Published As

Publication number Publication date
JP6245678B2 (ja) 2017-12-13
TW201407672A (zh) 2014-02-16
TWI523083B (zh) 2016-02-21
WO2014024589A1 (ja) 2014-02-13
CN104508796A (zh) 2015-04-08
US9653299B2 (en) 2017-05-16
EP2884522A1 (en) 2015-06-17
KR20140143836A (ko) 2014-12-17
EP2884522A4 (en) 2016-05-11
EP2884522B1 (en) 2019-04-10
JP2014036110A (ja) 2014-02-24
US20150170918A1 (en) 2015-06-18

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