KR20140143836A - 반도체 장치의 제조방법 - Google Patents

반도체 장치의 제조방법 Download PDF

Info

Publication number
KR20140143836A
KR20140143836A KR1020147031393A KR20147031393A KR20140143836A KR 20140143836 A KR20140143836 A KR 20140143836A KR 1020147031393 A KR1020147031393 A KR 1020147031393A KR 20147031393 A KR20147031393 A KR 20147031393A KR 20140143836 A KR20140143836 A KR 20140143836A
Authority
KR
South Korea
Prior art keywords
laser pulse
laser
pulse
semiconductor substrate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020147031393A
Other languages
English (en)
Korean (ko)
Inventor
나오키 와카바야시
Original Assignee
스미도모쥬기가이고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 스미도모쥬기가이고교 가부시키가이샤 filed Critical 스미도모쥬기가이고교 가부시키가이샤
Publication of KR20140143836A publication Critical patent/KR20140143836A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species

Landscapes

  • Recrystallisation Techniques (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
KR1020147031393A 2012-08-08 2013-06-24 반도체 장치의 제조방법 Ceased KR20140143836A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2012-176435 2012-08-08
JP2012176435A JP6245678B2 (ja) 2012-08-08 2012-08-08 半導体装置の製造方法
PCT/JP2013/067255 WO2014024589A1 (ja) 2012-08-08 2013-06-24 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
KR20140143836A true KR20140143836A (ko) 2014-12-17

Family

ID=50067830

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147031393A Ceased KR20140143836A (ko) 2012-08-08 2013-06-24 반도체 장치의 제조방법

Country Status (7)

Country Link
US (1) US9653299B2 (enExample)
EP (1) EP2884522B1 (enExample)
JP (1) JP6245678B2 (enExample)
KR (1) KR20140143836A (enExample)
CN (1) CN104508796B (enExample)
TW (1) TWI523083B (enExample)
WO (1) WO2014024589A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI545627B (zh) * 2012-06-13 2016-08-11 住友重機械工業股份有限公司 半導體裝置的製造方法及雷射退火裝置
DE102014103749A1 (de) * 2013-12-18 2015-06-18 Rofin-Baasel Lasertech Gmbh & Co. Kg Verfahren und Vorrichtung zur Bearbeitung eines Werkstücks
TW201528379A (zh) * 2013-12-20 2015-07-16 應用材料股份有限公司 雙波長退火方法與設備
JP6320799B2 (ja) * 2014-03-07 2018-05-09 住友重機械工業株式会社 半導体装置の製造方法
JP6338512B2 (ja) * 2014-11-17 2018-06-06 住友重機械工業株式会社 半導体装置の製造方法及びレーザアニール装置
JP6497903B2 (ja) * 2014-11-25 2019-04-10 住友重機械工業株式会社 レーザアニール装置
JP6771810B2 (ja) * 2015-04-20 2020-10-21 住友重機械工業株式会社 レーザ加工装置
JP6732371B2 (ja) * 2016-03-28 2020-07-29 住友重機械工業株式会社 レーザアニール装置
DE102016008509A1 (de) * 2016-07-13 2018-01-18 Siltectra Gmbh Laserkonditionierung von Festkörpern mit Vorwissen aus vorherigen Bearbeitungsschritten
JP2018107190A (ja) 2016-12-22 2018-07-05 トヨタ自動車株式会社 半導体装置の製造方法
WO2018179798A1 (ja) * 2017-03-29 2018-10-04 富士電機株式会社 半導体装置の製造方法
JP7091714B2 (ja) * 2018-03-01 2022-06-28 株式会社デンソー 半導体装置
EP3667704A1 (en) * 2018-12-13 2020-06-17 Laser Systems & Solutions of Europe Method for thermally processing a substrate and associated system
JP7428481B2 (ja) * 2019-06-07 2024-02-06 住友重機械工業株式会社 レーザアニール方法及びレーザ制御装置
CN115803852B (zh) 2020-06-18 2026-02-03 住友重机械工业株式会社 激光退火装置的控制装置及激光退火方法
CN112435921B (zh) * 2020-11-05 2024-05-17 北京华卓精科科技股份有限公司 一种功率器件的激光退火方法和激光退火系统

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004207691A (ja) * 2002-12-11 2004-07-22 Sharp Corp 半導体薄膜の製造方法、その製造方法により得られる半導体薄膜、その半導体薄膜を用いる半導体素子および半導体薄膜の製造装置
JP4373115B2 (ja) * 2003-04-04 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4590880B2 (ja) * 2003-06-24 2010-12-01 富士電機システムズ株式会社 半導体素子の製造方法
DE102004030268B4 (de) 2003-06-24 2013-02-21 Fuji Electric Co., Ltd Verfahren zum Herstellen eines Halbleiterelements
JP4171399B2 (ja) * 2003-10-30 2008-10-22 住友重機械工業株式会社 レーザ照射装置
US7491909B2 (en) 2004-03-31 2009-02-17 Imra America, Inc. Pulsed laser processing with controlled thermal and physical alterations
JP2006351659A (ja) * 2005-06-14 2006-12-28 Toyota Motor Corp 半導体装置の製造方法
JP4117020B2 (ja) 2005-08-03 2008-07-09 フェトン株式会社 半導体装置の製造方法および半導体装置の製造装置
JP2007123300A (ja) * 2005-10-25 2007-05-17 Toyota Motor Corp 不純物活性化方法、レーザアニール装置、半導体装置とその製造方法
DE102008003953A1 (de) 2007-02-28 2008-09-04 Fuji Electric Device Technology Co. Ltd. Verfahren zur Herstellung eines Halbleiterelements
JP5105984B2 (ja) 2007-07-26 2012-12-26 住友重機械工業株式会社 ビーム照射装置、及び、レーザアニール方法
JP2010171057A (ja) 2009-01-20 2010-08-05 Denso Corp 半導体装置およびその製造方法
JP4678700B1 (ja) 2009-11-30 2011-04-27 株式会社日本製鋼所 レーザアニール装置およびレーザアニール方法
JP5307093B2 (ja) * 2010-08-23 2013-10-02 株式会社日本製鋼所 半導体デバイスの製造方法
JP5641965B2 (ja) * 2011-02-09 2014-12-17 住友重機械工業株式会社 レーザアニール方法及びレーザアニール装置
TWI545627B (zh) * 2012-06-13 2016-08-11 住友重機械工業股份有限公司 半導體裝置的製造方法及雷射退火裝置
JP5963701B2 (ja) * 2013-03-27 2016-08-03 住友重機械工業株式会社 半導体アニール装置及び温度測定方法

Also Published As

Publication number Publication date
CN104508796B (zh) 2017-07-11
US20150170918A1 (en) 2015-06-18
JP2014036110A (ja) 2014-02-24
EP2884522A4 (en) 2016-05-11
TWI523083B (zh) 2016-02-21
EP2884522B1 (en) 2019-04-10
TW201407672A (zh) 2014-02-16
EP2884522A1 (en) 2015-06-17
WO2014024589A1 (ja) 2014-02-13
US9653299B2 (en) 2017-05-16
JP6245678B2 (ja) 2017-12-13
CN104508796A (zh) 2015-04-08

Similar Documents

Publication Publication Date Title
JP6245678B2 (ja) 半導体装置の製造方法
EP2674967B1 (en) Laser annealing method and laser annealing apparatus
KR101228488B1 (ko) 레이저 어닐링 장치 및 레이저 어닐링 방법
KR101572717B1 (ko) 반도체장치의 제조방법 및 레이저어닐링장치
TWI497600B (zh) 用於積體電路製造之具有減少圖案密度效應的超快速雷射退火
JP5105984B2 (ja) ビーム照射装置、及び、レーザアニール方法
US9302348B2 (en) Ultrafast laser annealing with reduced pattern density effects in integrated circuit fabrication
JP6910742B2 (ja) レーザアニール方法及びレーザアニール装置
JP6004765B2 (ja) 半導体装置の製造方法及びレーザアニール装置
JP6000015B2 (ja) 半導体装置の製造方法
WO2015133290A1 (ja) 半導体装置の製造方法
JP5500573B2 (ja) 半導体不純物の活性化方法
JP6338512B2 (ja) 半導体装置の製造方法及びレーザアニール装置
JP2014195004A (ja) 半導体素子の製造方法及び半導体素子の製造装置
JP6497903B2 (ja) レーザアニール装置

Legal Events

Date Code Title Description
A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000