JP6237248B2 - 炭化珪素単結晶の製造方法 - Google Patents
炭化珪素単結晶の製造方法 Download PDFInfo
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- JP6237248B2 JP6237248B2 JP2014005043A JP2014005043A JP6237248B2 JP 6237248 B2 JP6237248 B2 JP 6237248B2 JP 2014005043 A JP2014005043 A JP 2014005043A JP 2014005043 A JP2014005043 A JP 2014005043A JP 6237248 B2 JP6237248 B2 JP 6237248B2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 139
- 239000013078 crystal Substances 0.000 title claims description 138
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 138
- 238000004519 manufacturing process Methods 0.000 title claims description 48
- 239000000758 substrate Substances 0.000 claims description 57
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 41
- 238000010438 heat treatment Methods 0.000 claims description 38
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 239000011261 inert gas Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000003763 carbonization Methods 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 76
- 239000000853 adhesive Substances 0.000 description 18
- 230000001070 adhesive effect Effects 0.000 description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- 229910052799 carbon Inorganic materials 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000002994 raw material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000005092 sublimation method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
[本願発明の実施形態の説明]
(1)本実施の形態に係る炭化珪素単結晶の製造方法は、種基板10と台座20とを応力緩衝層30を介して固定する工程(S10)と、種基板10上に炭化珪素単結晶50を成長させる工程(S20)と、応力緩衝層30において炭化珪素単結晶50と台座20とを切り離す工程(S30)と、切り離す工程(S30)後の炭化珪素単結晶50に付着している応力緩衝層30の残渣を除去する工程(S40)とを備える。
(S30)において応力緩衝層30を切断することにより、種基板10の第4の主面10B上には応力緩衝層30の残渣31が生じることになるが、当該残渣31は、除去する工程(S40)において研削や研磨等によらず容易に除去することができる(詳細は後述する)。
次に、本発明の実施の形態についてより詳細に説明する。
10A 第3の主面
10B 第4の主面
20 台座
20A 第5の主面
30 応力緩衝層
30A 第1の主面
30B 第2の主面
30E 端面
31,32 残渣
40 接着剤
50 単結晶
60 ワイヤ
70 レーザ光源
Claims (5)
- 種基板と台座とを応力緩衝層を介して固定する工程と、
前記種基板上に炭化珪素単結晶を成長させる工程と、
前記応力緩衝層において前記炭化珪素単結晶と前記台座とを切り離す工程と、
前記切り離す工程後の前記炭化珪素単結晶に付着している前記応力緩衝層の残渣を除去する工程とを備える、炭化珪素単結晶の製造方法。 - 前記切り離す工程では、前記応力緩衝層の主面に沿った方向に延びるワイヤを前記応力緩衝層の端面から前記応力緩衝層に圧入させることにより、前記応力緩衝層において前記炭化珪素単結晶と前記台座とを切り離す、請求項1に記載の炭化珪素単結晶の製造方法。
- 前記切り離す工程では、前記応力緩衝層に対してレーザ光を照射させることにより前記応力緩衝層において前記炭化珪素単結晶と前記台座とを切り離す、請求項1に記載の炭化珪素単結晶の製造方法。
- 前記残渣を除去する工程では、酸素含有雰囲気下において前記炭化珪素単結晶を加熱することにより、前記応力緩衝層の残渣を除去する、請求項1〜請求項3のいずれか1項に記載の炭化珪素単結晶の製造方法。
- 前記炭化珪素単結晶を不活性ガス雰囲気下において加熱する工程をさらに備え、
前記加熱する工程は、前記残渣を除去する工程の後に連続して実施される、請求項4に記載の炭化珪素単結晶の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014005043A JP6237248B2 (ja) | 2014-01-15 | 2014-01-15 | 炭化珪素単結晶の製造方法 |
PCT/JP2014/080849 WO2015107772A1 (ja) | 2014-01-15 | 2014-11-21 | 炭化珪素単結晶の製造方法 |
DE112014006171.9T DE112014006171T5 (de) | 2014-01-15 | 2014-11-21 | Verfahren für die Herstellung eines Siliziumcarbid-Einkristalls |
US15/111,013 US10184191B2 (en) | 2014-01-15 | 2014-11-21 | Method for manufacturing silicon carbide single crystal |
CN201480073219.2A CN105917034A (zh) | 2014-01-15 | 2014-11-21 | 碳化硅单晶的制造方法 |
Applications Claiming Priority (1)
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JP2014005043A JP6237248B2 (ja) | 2014-01-15 | 2014-01-15 | 炭化珪素単結晶の製造方法 |
Publications (3)
Publication Number | Publication Date |
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JP2015131748A JP2015131748A (ja) | 2015-07-23 |
JP2015131748A5 JP2015131748A5 (ja) | 2016-10-20 |
JP6237248B2 true JP6237248B2 (ja) | 2017-11-29 |
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JP2014005043A Expired - Fee Related JP6237248B2 (ja) | 2014-01-15 | 2014-01-15 | 炭化珪素単結晶の製造方法 |
Country Status (5)
Country | Link |
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US (1) | US10184191B2 (ja) |
JP (1) | JP6237248B2 (ja) |
CN (1) | CN105917034A (ja) |
DE (1) | DE112014006171T5 (ja) |
WO (1) | WO2015107772A1 (ja) |
Families Citing this family (3)
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JP2022103797A (ja) * | 2020-12-28 | 2022-07-08 | 昭和電工株式会社 | 炭化珪素単結晶製造装置および炭化珪素単結晶の製造方法 |
JP2022103720A (ja) * | 2020-12-28 | 2022-07-08 | 昭和電工株式会社 | 炭化珪素単結晶製造装置および炭化珪素単結晶の製造方法 |
CN112981524B (zh) * | 2021-02-23 | 2023-03-07 | 芜湖予秦半导体科技有限公司 | 一种物理气相传输法用坩埚盖及其制备方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
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US6110279A (en) * | 1996-03-29 | 2000-08-29 | Denso Corporation | Method of producing single-crystal silicon carbide |
US6328796B1 (en) * | 1999-02-01 | 2001-12-11 | The United States Of America As Represented By The Secretary Of The Navy | Single-crystal material on non-single-crystalline substrate |
FR2849714B1 (fr) * | 2003-01-07 | 2007-03-09 | Recyclage par des moyens mecaniques d'une plaquette comprenant une structure multicouches apres prelevement d'une couche mince | |
JP2005255420A (ja) * | 2004-03-09 | 2005-09-22 | Ngk Insulators Ltd | 炭化珪素単結晶膜の製造方法および炭化珪素単結晶膜 |
JP4556634B2 (ja) * | 2004-11-18 | 2010-10-06 | パナソニック株式会社 | 種結晶固定部及び種結晶固定方法 |
JP4894717B2 (ja) | 2007-10-23 | 2012-03-14 | 株式会社デンソー | 炭化珪素単結晶基板の製造方法 |
JP5012655B2 (ja) * | 2008-05-16 | 2012-08-29 | 三菱電機株式会社 | 単結晶成長装置 |
JP5061038B2 (ja) * | 2008-06-13 | 2012-10-31 | 株式会社ブリヂストン | 炭化ケイ素単結晶の研削方法 |
JP2010064918A (ja) * | 2008-09-10 | 2010-03-25 | Showa Denko Kk | 炭化珪素単結晶の製造方法、炭化珪素単結晶ウェーハ及び炭化珪素単結晶半導体パワーデバイス |
JP4985625B2 (ja) * | 2008-12-02 | 2012-07-25 | 三菱電機株式会社 | 炭化珪素単結晶の製造方法 |
JP5346788B2 (ja) * | 2009-11-30 | 2013-11-20 | 昭和電工株式会社 | 炭化珪素単結晶の製造方法 |
JP2011251884A (ja) * | 2010-06-03 | 2011-12-15 | Bridgestone Corp | 炭化ケイ素単結晶の製造装置 |
KR20130014272A (ko) * | 2011-07-29 | 2013-02-07 | 엘지이노텍 주식회사 | 잉곳 제조 장치 |
JP2013067522A (ja) | 2011-09-21 | 2013-04-18 | Sumitomo Electric Ind Ltd | 炭化珪素結晶の製造方法 |
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2014
- 2014-01-15 JP JP2014005043A patent/JP6237248B2/ja not_active Expired - Fee Related
- 2014-11-21 US US15/111,013 patent/US10184191B2/en not_active Expired - Fee Related
- 2014-11-21 CN CN201480073219.2A patent/CN105917034A/zh active Pending
- 2014-11-21 WO PCT/JP2014/080849 patent/WO2015107772A1/ja active Application Filing
- 2014-11-21 DE DE112014006171.9T patent/DE112014006171T5/de not_active Withdrawn
Also Published As
Publication number | Publication date |
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US20160340796A1 (en) | 2016-11-24 |
WO2015107772A1 (ja) | 2015-07-23 |
DE112014006171T5 (de) | 2016-09-29 |
JP2015131748A (ja) | 2015-07-23 |
CN105917034A (zh) | 2016-08-31 |
US10184191B2 (en) | 2019-01-22 |
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