JP6234606B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6234606B2 JP6234606B2 JP2016555131A JP2016555131A JP6234606B2 JP 6234606 B2 JP6234606 B2 JP 6234606B2 JP 2016555131 A JP2016555131 A JP 2016555131A JP 2016555131 A JP2016555131 A JP 2016555131A JP 6234606 B2 JP6234606 B2 JP 6234606B2
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- 239000004065 semiconductor Substances 0.000 title claims description 142
- 239000010410 layer Substances 0.000 claims description 145
- 239000012535 impurity Substances 0.000 claims description 87
- 239000000758 substrate Substances 0.000 claims description 53
- 239000002344 surface layer Substances 0.000 claims description 17
- 238000005468 ion implantation Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 description 67
- 238000004519 manufacturing process Methods 0.000 description 37
- 230000000694 effects Effects 0.000 description 28
- 230000001965 increasing effect Effects 0.000 description 28
- 230000015572 biosynthetic process Effects 0.000 description 23
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 22
- 238000009826 distribution Methods 0.000 description 19
- 229910010271 silicon carbide Inorganic materials 0.000 description 19
- 230000008569 process Effects 0.000 description 17
- 239000011229 interlayer Substances 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 12
- 238000002513 implantation Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000004364 calculation method Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000007480 spreading Effects 0.000 description 5
- 238000003892 spreading Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
- H01L29/086—Impurity concentration or distribution
-
- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
-
- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
- H01L21/0465—Making n or p doped regions or layers, e.g. using diffusion using ion implantation using masks
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
- H01L29/0865—Disposition
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- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7806—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a Schottky barrier diode
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
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- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
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- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
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Description
図1は、実施の形態1に係る半導体装置(MOSFET)の構成を模式的に示す縦断面図であり、MOSFETのユニットセルの右側半分の構造を示している。ユニットセルは半導体装置の能動領域に複数個形成される。つまり、図1は、半導体装置の能動領域の任意の位置の断面を示しており、能動領域の外側に設けられる終端領域を含んでいない。
図18は、実施の形態2に係る半導体装置(MOSFET)の構成を模式的に示す縦断面図である。図18において、図1に示したものと同様の機能を有する要素には同一符号を付してあるので、ここではそれらの説明は省略する。
実施の形態3では、本発明をトレンチ型のMOSFETに適用する。図24〜図29は、本実施の形態に係る半導体装置であるトレンチ型の炭化珪素MOSFETの製造方法を示す工程図である(図28および図29には、完成したMOSFETの構成が示されている)。
実施の形態4では、実施の形態3と同様に、本発明をトレンチ型のMOSFETに適用するが、ソース領域12の構成を、ソースコンタクト領域12a、ソース抵抗制御領域15、ソースエクステンション領域12bが縦方向(ドリフト層2の表面に対して垂直な方向)に並ぶ積層構造とする。
実施の形態5では、本発明を、ショットキーバリアダイオード(SBD;以下、「ショットキーダイオード」とも称す)を内蔵化させたMOSFET(SBD内蔵MOSFET)へ適用する。
実施の形態6では、本発明を、ショットキーバリアダイオードを内蔵化させたトレンチ型のMOSFET(SBD内蔵トレンチMOSFET)へ適用する。
Claims (12)
- 半導体基板と、
前記半導体基板上に形成された第1導電型のドリフト層と、
前記ドリフト層の表層部に選択的に形成された第2導電型のウェル領域と、
前記ウェル領域内の表層部に形成された第1導電型のソース領域と、
前記ウェル領域に隣接する前記ドリフト層の部分であるJFET領域と、
前記ソース領域と前記JFET領域とに挟まれた前記ウェル領域の部分であるチャネル領域と、
前記ドリフト層上にゲート絶縁膜を介して配設され、前記ソース領域、前記チャネル領域および前記JFET領域に跨って延在するゲート電極と、
前記ソース領域に接続するソース電極と、
前記半導体基板の裏面に形成されたドレイン電極とを備え、
前記ソース領域は、
前記ウェル領域内の表層部に形成され、前記ソース電極に接続するソースコンタクト領域と、
前記ウェル領域内の表層部に形成され、前記チャネル領域に隣接するソースエクステンション領域と、
前記ソースエクステンション領域と前記ソースコンタクト領域との間に配設されたソース抵抗制御領域とを含み、
前記ソース抵抗制御領域は、
前記ソースエクステンション領域あるいは前記ソースコンタクト領域よりも第1導電型の不純物濃度が低い低濃度ソース抵抗制御領域と、
前記ウェル領域と前記低濃度ソース抵抗制御領域との間に形成され、前記低濃度ソース抵抗制御領域よりも第1導電型の不純物濃度が高い高濃度ソース抵抗制御領域とを含む
ことを特徴とする半導体装置。 - 半導体基板と、
前記半導体基板上に形成された第1導電型のドリフト層と、
前記ドリフト層の表層部に選択的に形成された第2導電型のウェル領域と、
前記ウェル領域を貫通して前記ドリフト層に達するように形成されたトレンチと、
前記ウェル領域内の表層部に形成され、前記トレンチの側壁に達する第1導電型のソース領域と、
前記ソース領域と前記ウェル領域の下の前記ドリフト層とに挟まれつつ前記トレンチに隣接した前記ウェル領域の部分であるチャネル領域と、
前記トレンチ内にゲート絶縁膜を介して配設され、前記ソース領域、前記チャネル領域および前記ウェル領域の下の前記ドリフト層に跨って延在するゲート電極と、
前記ソース領域に接続するソース電極と、
前記半導体基板の裏面に形成されたドレイン電極とを備え、
前記ソース領域は、
前記ウェル領域内の表層部に形成され、前記ソース電極に接続するソースコンタクト領域と、
前記チャネル領域に隣接するソースエクステンション領域と、
前記ソースエクステンション領域と前記ソースコンタクト領域との間に配設されたソース抵抗制御領域とを含み、
前記ソース抵抗制御領域は、
前記ソースエクステンション領域あるいは前記ソースコンタクト領域よりも第1導電型の不純物濃度が低い低濃度ソース抵抗制御領域と、
前記ウェル領域と前記低濃度ソース抵抗制御領域との間に形成され、前記低濃度ソース抵抗制御領域よりも第1導電型の不純物濃度が高い高濃度ソース抵抗制御領域とを含む
ことを特徴とする半導体装置。 - 前記高濃度ソース抵抗制御領域は、前記ドリフト層の表層部にイオン注入によって形成されたものであり、
前記高濃度ソース抵抗制御領域の厚さは、0.1μm以上3.0μm以下である
請求項1または請求項2に記載の半導体装置。 - 前記高濃度ソース抵抗制御領域は、前記ドリフト層の表面上に形成されたエピタキシャル成長層により構成されており、
前記高濃度ソース抵抗制御領域の厚さは、0.05μm以上0.5μm以下である
請求項1または請求項2に記載の半導体装置。 - 前記高濃度ソース抵抗制御領域の第1導電型の不純物濃度は、前記低濃度ソース抵抗制御領域の第1導電型の不純物濃度に比べて1桁以上高い
請求項1または請求項2に記載の半導体装置。 - 前記高濃度ソース抵抗制御領域は、通常動作時のオン状態において、前記ソース抵抗制御領域と前記ウェル領域との間のpn接合で形成される空乏層によって完全に空乏化される
請求項1または請求項2に記載の半導体装置。 - 前記高濃度ソース抵抗制御領域は、通常動作時のオン状態において、前記ソース抵抗制御領域と前記ウェル領域との間のpn接合で形成される空乏層によって完全には空乏化されない
請求項1または請求項2に記載の半導体装置。 - 前記低濃度ソース抵抗制御領域の導電型は、第2導電型である
請求項1または請求項2に記載の半導体装置。 - 前記ウェル領域は、レトログレード型の不純物濃度プロファイルを有している
請求項1または請求項2に記載の半導体装置。 - 前記低濃度ソース抵抗制御領域および前記高濃度ソース抵抗制御領域のうち、少なくとも前記低濃度ソース抵抗制御領域は、前記ドリフト層の表面上に形成されたエピタキシャル成長層により構成されている
請求項1または請求項2に記載の半導体装置。 - 前記低濃度ソース抵抗制御領域を構成するエピタキシャル成長層が、前記チャネル領域および前記チャネル領域に隣接する前記ドリフト層の部分の上にまで延在している
請求項10に記載の半導体装置。 - 前記ドリフト層上に形成され、前記ドリフト層にショットキー接続すると共に、前記ソース領域と電気的に接続するショットキー電極さらに備える
請求項1または請求項2に記載の半導体装置。
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