JPWO2018117061A1 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 148
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000010410 layer Substances 0.000 claims abstract description 139
- 239000012535 impurity Substances 0.000 claims abstract description 79
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 239000002344 surface layer Substances 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 32
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 19
- 229910052799 carbon Inorganic materials 0.000 claims description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- 238000002513 implantation Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 68
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 67
- 238000005468 ion implantation Methods 0.000 description 25
- 230000007547 defect Effects 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005136 cathodoluminescence Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
Description
図1は、実施の形態にかかる炭化珪素半導体装置の構成を示す断面図である。図1に示すように、実施の形態にかかる炭化珪素半導体装置は、n+型炭化珪素基板(第1導電型のワイドバンドギャップ半導体基板)1の第1主面(おもて面)、例えば(0001)面(Si面)に、n型ドリフト層(第1導電型の第1ワイドバンドギャップ半導体層)2が堆積されている。
次に、実施の形態にかかる炭化珪素半導体装置の製造方法について説明する。図3〜図8は、実施の形態にかかる炭化珪素半導体装置の製造途中の状態を模式的に示す断面図である。
2 n型ドリフト層
2a 第1n型ドリフト層
2b 第2n型ドリフト層
3 第1p+型領域
3a 深い第1p+型領域
3b 浅い第1p+型領域
4 第2p+型領域
5 n型エピタキシャル層
5a 第1n型エピタキシャル層
5b 第2n型エピタキシャル層
6 p型ベース層
7 n+型ソース領域
8 p++型コンタクト領域
9 ゲート絶縁膜
10 ゲート電極
11 層間絶縁膜
12 ソース電極
13 裏面電極
14 ソース電極バッド
15 ドレイン電極パッド
16 トレンチ
Claims (6)
- シリコンよりもバンドギャップが広い半導体からなる第1導電型のワイドバンドギャップ半導体基板と、
前記ワイドバンドギャップ半導体基板のおもて面に設けられた、シリコンよりもバンドギャップが広い半導体からなる、前記ワイドバンドギャップ半導体基板より低不純物濃度の第1導電型のワイドバンドギャップ半導体層と、
前記第1導電型のワイドバンドギャップ半導体層の前記ワイドバンドギャップ半導体基板側に対して反対側の表面層に選択的に設けられた第2導電型の第1ベース領域と、
前記第1導電型のワイドバンドギャップ半導体層の内部に選択的に設けられた第2導電型の第2ベース領域と、
前記第1導電型のワイドバンドギャップ半導体層の前記ワイドバンドギャップ半導体基板に対して反対側の表面に設けられた、シリコンよりもバンドギャップが広い半導体からなる、第2導電型のワイドバンドギャップ半導体層と、
前記第2導電型のワイドバンドギャップ半導体層の内部に選択的に設けられた第1導電型のソース領域と、
前記ソース領域および前記第2導電型のワイドバンドギャップ半導体層を貫通して前記第1導電型のワイドバンドギャップ半導体層に達するトレンチと、
前記トレンチの内部にゲート絶縁膜を介して設けられたゲート電極と、
前記第2導電型のワイドバンドギャップ半導体層および前記ソース領域に接触するソース電極と、
前記ワイドバンドギャップ半導体基板の裏面に設けられたドレイン電極と、
を備え、
前記第1ベース領域は、前記トレンチの底部よりも前記ドレイン電極側に深い位置にある深い第1ベース領域および前記トレンチの底部よりも前記ソース領域側に近い位置にある浅い第1ベース領域を有し、
前記深い第1ベース領域は、前記第1ベース領域の導電型を決定する不純物に追い出された元素と結合する他の元素が所定の割合で注入されていることを特徴とする半導体装置。 - 前記浅い第1ベース領域は、前記元素が所定の割合で注入されていることを特徴とする請求項1に記載の半導体装置。
- 前記不純物がシリコンサイトに入る不純物である場合、前記元素は炭素であり、
前記不純物がカーボンサイトに入る不純物である場合、前記元素は珪素であることを特徴とする請求項1または2に記載の半導体装置。 - 前記不純物がアルミニウムであり、前記元素が炭素であることを特徴とする請求項1または2に記載の半導体装置。
- シリコンよりもバンドギャップが広い半導体からなる第1導電型のワイドバンドギャップ半導体基板のおもて面に、シリコンよりもバンドギャップが広い半導体からなる、前記ワイドバンドギャップ半導体基板より低不純物濃度の第1導電型のワイドバンドギャップ半導体層を形成する工程と、
前記第1導電型のワイドバンドギャップ半導体層の表面層に、第2導電型の第1ベース領域を選択的に形成する工程と、
前記第1導電型のワイドバンドギャップ半導体層の内部に、第2導電型の第2ベース領域を選択的に形成する工程と、
前記第1導電型のワイドバンドギャップ半導体層の表面に、シリコンよりもバンドギャップが広い半導体からなる、第2導電型のワイドバンドギャップ半導体層を形成する工程と、
前記第2導電型のワイドバンドギャップ半導体層の内部に第1導電型のソース領域を選択的に形成する工程と、
前記ソース領域および前記第2導電型のワイドバンドギャップ半導体層を貫通して前記第1導電型のワイドバンドギャップ半導体層に達するトレンチを形成する工程と、
前記トレンチの内部にゲート絶縁膜を介してゲート電極を形成する工程と、
前記第2導電型のワイドバンドギャップ半導体層および前記ソース領域に接するソース電極を形成する工程と、
前記ワイドバンドギャップ半導体基板の裏面にドレイン電極を形成する工程と、
を含み、
前記第1ベース領域を選択的に形成する工程は、前記第1ベース領域の内、前記トレンチの底部よりも前記ドレイン電極側に深い位置にある深い第1ベース領域を、前記第1ベース領域の導電型を決定する不純物と、前記不純物に追い出された元素と結合する他の元素とを共注入することにより形成することを特徴とする半導体装置の製造方法。 - 前記第1ベース領域を選択的に形成する工程は、前記第1ベース領域の内、前記トレンチの底部よりも前記ソース領域側に近い位置にある浅い第1ベース領域を、前記不純物と、前記元素とを共注入することにより形成することを特徴とする請求項5に記載の半導体装置の製造方法。
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