JP6204103B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6204103B2 JP6204103B2 JP2013155233A JP2013155233A JP6204103B2 JP 6204103 B2 JP6204103 B2 JP 6204103B2 JP 2013155233 A JP2013155233 A JP 2013155233A JP 2013155233 A JP2013155233 A JP 2013155233A JP 6204103 B2 JP6204103 B2 JP 6204103B2
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- oxide semiconductor
- film
- semiconductor film
- transistor
- oxide
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
Description
本実施の形態では、半導体装置の一例として、トランジスタの構成等を図1乃至図3を用いて説明すると共に、当該トランジスタの作製方法の一例を、図4および図5を用いて説明する。
図1は、本実施の形態に記載するトランジスタの構造を示す図であり、図1(A)はトランジスタ150の平面図、図1(B)は図1(A)の一点鎖線A1−A2の断面図、図1(C)は図1(A)の一点鎖線B1−B2の断面図である。
次に、トランジスタ150等の作製方法を、図4乃至図6を用いて説明する。
本実施の形態では、実施の形態1にて記載したトランジスタを用いた半導体装置の一例として、NAND型回路の構造を、図7を用いて説明する。
本実施の形態では、実施の形態1にて記載した、トランジスタ150を構成要素の一部に使用した、不揮発性の特性を備えるメモリセルの構造についての説明を記載する。
本実施の形態では、半導体装置の一例として、実施の形態1に記載したトランジスタ150、実施の形態2にて記載したNAND回路およびNOR型回路、実施の形態3にて記載した不揮発性の特性を備えるメモリセルなどを少なくとも一部に用いたCPU(Central Processing Unit)について説明する。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、テレビ、モニタ等の表示装置、照明装置、デスクトップ型或いはノート型のパーソナルコンピュータ、ワードプロセッサ、DVD(Digital Versatile Disc)などの記録媒体に記憶された静止画または動画を再生する画像再生装置、ポータブルCDプレーヤ、ラジオ、テープレコーダ、ヘッドホンステレオ、ステレオ、コードレス電話子機、トランシーバ、携帯電話、自動車電話、携帯型ゲーム機、電卓、携帯情報端末、電子手帳、電子書籍、電子翻訳機、音声入力機器、ビデオカメラ、デジタルスチルカメラ、電気シェーバ、電子レンジ等の高周波加熱装置、電気炊飯器、電気洗濯機、電気掃除機、エアコンディショナーなどの空調設備、食器洗い器、食器乾燥器、衣類乾燥器、布団乾燥器、電気冷蔵庫、電気冷凍庫、電気冷凍冷蔵庫、DNA保存用冷凍庫、煙感知器、放射線測定器、透析装置等の医療機器、などが挙げられる。さらに、誘導灯、信号機、ベルトコンベア、エレベータ、エスカレータ、産業用ロボット、電力貯蔵システム等の産業機器も挙げられる。また、石油を用いたエンジンや、非水系二次電池からの電力を用いて電動機により推進する移動体なども、電子機器の範疇に含まれるものとする。上記移動体として、例えば、電気自動車(EV)、内燃機関と電動機を併せ持ったハイブリッド車(HEV)、プラグインハイブリッド車(PHEV)、これらのタイヤ車輪を無限軌道に変えた装軌車両、電動アシスト自転車を含む原動機付自転車、自動二輪車、電動車椅子、ゴルフ用カート、小型または大型船舶、潜水艦、ヘリコプター、航空機、ロケット、人工衛星、宇宙探査機や惑星探査機、宇宙船が挙げられる。これらの電子機器の具体例を図12に示す。
102 第1の絶縁層
104a 第1の酸化物半導体膜
104b 第2の酸化物半導体膜
104c 第3の酸化物半導体膜
105 領域
108a ソース電極
108b ドレイン電極
110 ゲート絶縁層
112 ゲート電極
114 第2の絶縁層
116 第3の絶縁層
150 トランジスタ
200 領域
600 領域
700 単結晶シリコン基板
701 チャネル形成領域
702 分離層
704 低抵抗領域
706 ゲート絶縁膜
708 ゲート電極
709 側壁絶縁膜
710 第1の層間膜
712 第1の導電膜
713 第2の層間膜
714 第2の導電膜
715 第3の層間膜
716 第3の導電膜
717 第4の層間膜
718 第4の導電膜
719 絶縁膜
720a バックゲート電極
720b バックゲート電極
721 第5の層間膜
722 第5の導電膜
723 第6の層間膜
724 第6の導電膜
750 第1のトランジスタ
760 第2のトランジスタ
770 第3のトランジスタ
780 第4のトランジスタ
850 第5のトランジスタ
860 第6のトランジスタ
870 第7のトランジスタ
880 第8のトランジスタ
901 第1の金属膜
902 第2の金属膜
903 第3の金属膜
1000 トランジスタ
1002 容量素子
1004 ビット線
1006 ワード線
1008 ノード
1010 第1のトランジスタ
1012 第2のトランジスタ
1014 容量素子
1018 ノード
1021 第1の配線
1022 第2の配線
1023 第3の配線
1024 第4の配線
1025 第5の配線
1141 スイッチング素子
1142 メモリセル
1143 メモリセル群
1189 ROMインターフェース
1190 基板
1191 ALU
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
3300 室内機
3301 筐体
3302 送風口
3303 制御装置
3304 室外機
3310 電気冷凍冷蔵庫
3311 筐体
3312 冷蔵室用扉
3313 冷凍室用扉
3314 野菜室用扉
3315 制御装置
3320 映像表示装置
3321 筐体
3322 表示部
3323 制御装置
3330 電気自動車
3331 二次電池
3332 制御装置
3333 駆動装置
Claims (2)
- 絶縁表面上の酸化物半導体層と、
前記酸化物半導体層上のソース電極およびドレイン電極と、
前記酸化物半導体層、前記ソース電極および前記ドレイン電極上のゲート絶縁層と、
前記ゲート絶縁層を挟んで前記酸化物半導体層と重なるゲート電極と、を有し、
前記酸化物半導体層は、第1の酸化物半導体膜と、前記第1の酸化物半導体膜上に位置し、前記ゲート絶縁層と接する領域を有する第2の酸化物半導体膜とを有し、
前記第1の酸化物半導体膜は、前記第2の酸化物半導体膜と重なる第1の領域と、前記第2の酸化物半導体膜と重ならず、且つ前記ソース電極と重なる第2の領域と、前記第2の酸化物半導体膜と重ならず、且つ前記ドレイン電極と重なる第3の領域とを有し、
前記第2の領域は、段差部を有し、
前記第3の領域は、段差部を有し、
前記第2の酸化物半導体膜の電子親和力は、前記第1の酸化物半導体膜の電子親和力より0.1eV以上小さく、
前記第1の酸化物半導体膜と前記第2の酸化物半導体膜は、同一の金属元素を主成分として含み、
前記第1の酸化物半導体膜のチャネル長方向の長さは、前記ゲート電極のチャネル長方向の長さよりも大きく、
前記第2の酸化物半導体膜のチャネル長方向の長さは、前記ゲート電極のチャネル長方向の長さよりも小さいことを特徴とする半導体装置。 - 請求項1において、
前記酸化物半導体層は、前記絶縁表面と前記第1の酸化物半導体膜との間に位置する第3の酸化物半導体膜を有し、
前記第3の酸化物半導体膜の電子親和力は、前記第1の酸化物半導体膜の電子親和力より0.1eV以上小さいことを特徴とする半導体装置。
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-
2013
- 2013-07-16 US US13/942,866 patent/US20140027762A1/en not_active Abandoned
- 2013-07-26 JP JP2013155233A patent/JP6204103B2/ja not_active Expired - Fee Related
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