JP6116149B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6116149B2
JP6116149B2 JP2012165298A JP2012165298A JP6116149B2 JP 6116149 B2 JP6116149 B2 JP 6116149B2 JP 2012165298 A JP2012165298 A JP 2012165298A JP 2012165298 A JP2012165298 A JP 2012165298A JP 6116149 B2 JP6116149 B2 JP 6116149B2
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Prior art keywords
transistor
gate electrode
semiconductor layer
gate
power supply
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Japanese (ja)
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JP2013062014A (ja
JP2013062014A5 (enExample
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小山　潤
潤 小山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2013062014A5 publication Critical patent/JP2013062014A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01714—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by bootstrapping, i.e. by positive feed-back

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Shift Register Type Memory (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Thin Film Transistor (AREA)
JP2012165298A 2011-08-24 2012-07-26 半導体装置 Active JP6116149B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012165298A JP6116149B2 (ja) 2011-08-24 2012-07-26 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011182274 2011-08-24
JP2011182274 2011-08-24
JP2012165298A JP6116149B2 (ja) 2011-08-24 2012-07-26 半導体装置

Related Child Applications (1)

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JP2017054256A Division JP6468688B2 (ja) 2011-08-24 2017-03-21 半導体装置及びその作製方法

Publications (3)

Publication Number Publication Date
JP2013062014A JP2013062014A (ja) 2013-04-04
JP2013062014A5 JP2013062014A5 (enExample) 2015-06-18
JP6116149B2 true JP6116149B2 (ja) 2017-04-19

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JP2012165298A Active JP6116149B2 (ja) 2011-08-24 2012-07-26 半導体装置
JP2017054256A Expired - Fee Related JP6468688B2 (ja) 2011-08-24 2017-03-21 半導体装置及びその作製方法

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US (1) US9083335B2 (enExample)
JP (2) JP6116149B2 (enExample)
KR (2) KR102013130B1 (enExample)

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JP2014045175A (ja) 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd 半導体装置
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TWI638519B (zh) * 2013-05-17 2018-10-11 半導體能源研究所股份有限公司 可程式邏輯裝置及半導體裝置
JP6475424B2 (ja) * 2013-06-05 2019-02-27 株式会社半導体エネルギー研究所 半導体装置
JP6126509B2 (ja) * 2013-10-04 2017-05-10 株式会社半導体エネルギー研究所 半導体装置
US9300292B2 (en) * 2014-01-10 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Circuit including transistor
JP2015149414A (ja) * 2014-02-06 2015-08-20 株式会社東芝 半導体装置及び撮像装置
US9520872B2 (en) * 2014-12-23 2016-12-13 Qualcomm Incorporated Linear equalizer with variable gain
US10032921B2 (en) * 2015-07-31 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
US9666606B2 (en) * 2015-08-21 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
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US11048105B1 (en) * 2017-09-30 2021-06-29 Matthew Roy Visor-like tablet and tablet holder for automotive vehicle
KR102366974B1 (ko) * 2017-11-03 2022-02-25 삼성전자주식회사 인터페이스 회로 및 인터페이스 장치
WO2021105828A1 (ja) * 2019-11-29 2021-06-03 株式会社半導体エネルギー研究所 半導体装置、表示装置、及び電子機器
WO2021116828A1 (ja) 2019-12-13 2021-06-17 株式会社半導体エネルギー研究所 半導体装置、表示装置、及び電子機器
JP2021163917A (ja) * 2020-04-02 2021-10-11 ルネサスエレクトロニクス株式会社 半導体装置
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US12362717B2 (en) 2022-11-16 2025-07-15 Qualcomm Incorporated Second-order equalizer for high-speed data lines

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