KR102013130B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR102013130B1
KR102013130B1 KR1020120091627A KR20120091627A KR102013130B1 KR 102013130 B1 KR102013130 B1 KR 102013130B1 KR 1020120091627 A KR1020120091627 A KR 1020120091627A KR 20120091627 A KR20120091627 A KR 20120091627A KR 102013130 B1 KR102013130 B1 KR 102013130B1
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KR
South Korea
Prior art keywords
transistor
input
logic circuit
power supply
gate
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Expired - Fee Related
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KR1020120091627A
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English (en)
Korean (ko)
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KR20130022376A (ko
Inventor
준 고야마
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20130022376A publication Critical patent/KR20130022376A/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01714—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by bootstrapping, i.e. by positive feed-back

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Thin Film Transistor (AREA)
  • Shift Register Type Memory (AREA)
KR1020120091627A 2011-08-24 2012-08-22 반도체 장치 Expired - Fee Related KR102013130B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011182274 2011-08-24
JPJP-P-2011-182274 2011-08-24

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020190099433A Division KR102145179B1 (ko) 2011-08-24 2019-08-14 반도체 장치

Publications (2)

Publication Number Publication Date
KR20130022376A KR20130022376A (ko) 2013-03-06
KR102013130B1 true KR102013130B1 (ko) 2019-08-22

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Family Applications (2)

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KR1020120091627A Expired - Fee Related KR102013130B1 (ko) 2011-08-24 2012-08-22 반도체 장치
KR1020190099433A Active KR102145179B1 (ko) 2011-08-24 2019-08-14 반도체 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020190099433A Active KR102145179B1 (ko) 2011-08-24 2019-08-14 반도체 장치

Country Status (3)

Country Link
US (1) US9083335B2 (enExample)
JP (2) JP6116149B2 (enExample)
KR (2) KR102013130B1 (enExample)

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KR101943293B1 (ko) 2009-10-16 2019-01-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치 및 전자 장치
US9742378B2 (en) 2012-06-29 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit and semiconductor device
JP2014045175A (ja) 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd 半導体装置
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US9172369B2 (en) * 2013-05-17 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
JP6475424B2 (ja) * 2013-06-05 2019-02-27 株式会社半導体エネルギー研究所 半導体装置
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US9300292B2 (en) * 2014-01-10 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Circuit including transistor
JP2015149414A (ja) * 2014-02-06 2015-08-20 株式会社東芝 半導体装置及び撮像装置
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SG10201607278TA (en) * 2015-09-18 2017-04-27 Semiconductor Energy Lab Co Ltd Semiconductor device and electronic device
US11048105B1 (en) * 2017-09-30 2021-06-29 Matthew Roy Visor-like tablet and tablet holder for automotive vehicle
KR102366974B1 (ko) * 2017-11-03 2022-02-25 삼성전자주식회사 인터페이스 회로 및 인터페이스 장치
JPWO2021105828A1 (enExample) * 2019-11-29 2021-06-03
KR20220116481A (ko) 2019-12-13 2022-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치, 및 전자 기기
JP2021163917A (ja) * 2020-04-02 2021-10-11 ルネサスエレクトロニクス株式会社 半導体装置
US11699391B2 (en) 2021-05-13 2023-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display apparatus, and electronic device
US11689201B2 (en) 2021-07-26 2023-06-27 Qualcomm Incorporated Universal serial bus (USB) host data switch with integrated equalizer
US12362717B2 (en) 2022-11-16 2025-07-15 Qualcomm Incorporated Second-order equalizer for high-speed data lines

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