JP6110769B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6110769B2
JP6110769B2 JP2013198300A JP2013198300A JP6110769B2 JP 6110769 B2 JP6110769 B2 JP 6110769B2 JP 2013198300 A JP2013198300 A JP 2013198300A JP 2013198300 A JP2013198300 A JP 2013198300A JP 6110769 B2 JP6110769 B2 JP 6110769B2
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Japan
Prior art keywords
semiconductor chip
plan
view
semiconductor device
die pad
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Expired - Fee Related
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JP2013198300A
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English (en)
Japanese (ja)
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JP2015065296A5 (enExample
JP2015065296A (ja
Inventor
慎一 内田
慎一 内田
健次 西川
健次 西川
正人 菅野
正人 菅野
美香 米澤
美香 米澤
帰山　隼一
隼一 帰山
俊範 清原
俊範 清原
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Renesas Electronics Corp
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Renesas Electronics Corp
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Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2013198300A priority Critical patent/JP6110769B2/ja
Priority to US14/487,762 priority patent/US9257400B2/en
Priority to CN201410498376.XA priority patent/CN104465592B/zh
Publication of JP2015065296A publication Critical patent/JP2015065296A/ja
Priority to HK15108392.0A priority patent/HK1207743B/zh
Priority to US14/982,155 priority patent/US20160111357A1/en
Publication of JP2015065296A5 publication Critical patent/JP2015065296A5/ja
Application granted granted Critical
Publication of JP6110769B2 publication Critical patent/JP6110769B2/ja
Expired - Fee Related legal-status Critical Current
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    • H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
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    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10D62/117—Shapes of semiconductor bodies

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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US14/487,762 US9257400B2 (en) 2013-09-25 2014-09-16 Semiconductor device
CN201410498376.XA CN104465592B (zh) 2013-09-25 2014-09-25 半导体器件
HK15108392.0A HK1207743B (zh) 2013-09-25 2015-08-28 半导体器件
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JP2017112327A (ja) * 2015-12-18 2017-06-22 ルネサスエレクトロニクス株式会社 半導体装置
CN111383542A (zh) 2018-12-29 2020-07-07 广东聚华印刷显示技术有限公司 像素结构和显示面板
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JPH08130284A (ja) * 1994-10-31 1996-05-21 Fuji Electric Co Ltd 半導体装置
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US6476474B1 (en) * 2000-10-10 2002-11-05 Siliconware Precision Industries Co., Ltd. Dual-die package structure and method for fabricating the same
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JP4759948B2 (ja) * 2004-07-28 2011-08-31 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
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US9257400B2 (en) 2016-02-09

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