JP6110769B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6110769B2
JP6110769B2 JP2013198300A JP2013198300A JP6110769B2 JP 6110769 B2 JP6110769 B2 JP 6110769B2 JP 2013198300 A JP2013198300 A JP 2013198300A JP 2013198300 A JP2013198300 A JP 2013198300A JP 6110769 B2 JP6110769 B2 JP 6110769B2
Authority
JP
Japan
Prior art keywords
semiconductor chip
plan
view
semiconductor device
die pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013198300A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015065296A5 (enExample
JP2015065296A (ja
Inventor
慎一 内田
慎一 内田
健次 西川
健次 西川
正人 菅野
正人 菅野
美香 米澤
美香 米澤
帰山　隼一
隼一 帰山
俊範 清原
俊範 清原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2013198300A priority Critical patent/JP6110769B2/ja
Priority to US14/487,762 priority patent/US9257400B2/en
Priority to CN201410498376.XA priority patent/CN104465592B/zh
Publication of JP2015065296A publication Critical patent/JP2015065296A/ja
Priority to HK15108392.0A priority patent/HK1207743B/zh
Priority to US14/982,155 priority patent/US20160111357A1/en
Publication of JP2015065296A5 publication Critical patent/JP2015065296A5/ja
Application granted granted Critical
Publication of JP6110769B2 publication Critical patent/JP6110769B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H10W90/811—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H10W20/497—
    • H10W70/411—
    • H10W72/00—
    • H10W90/293—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10W70/417—
    • H10W70/427—
    • H10W72/0113—
    • H10W72/01304—
    • H10W72/01325—
    • H10W72/07178—
    • H10W72/073—
    • H10W72/07327—
    • H10W72/07352—
    • H10W72/07353—
    • H10W72/075—
    • H10W72/321—
    • H10W72/334—
    • H10W72/344—
    • H10W72/352—
    • H10W72/354—
    • H10W72/5449—
    • H10W72/5473—
    • H10W72/5522—
    • H10W72/865—
    • H10W72/932—
    • H10W72/944—
    • H10W72/9445—
    • H10W74/00—
    • H10W74/111—
    • H10W74/137—
    • H10W90/731—
    • H10W90/736—
    • H10W90/756—

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2013198300A 2013-09-25 2013-09-25 半導体装置 Expired - Fee Related JP6110769B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013198300A JP6110769B2 (ja) 2013-09-25 2013-09-25 半導体装置
US14/487,762 US9257400B2 (en) 2013-09-25 2014-09-16 Semiconductor device
CN201410498376.XA CN104465592B (zh) 2013-09-25 2014-09-25 半导体器件
HK15108392.0A HK1207743B (zh) 2013-09-25 2015-08-28 半导体器件
US14/982,155 US20160111357A1 (en) 2013-09-25 2015-12-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013198300A JP6110769B2 (ja) 2013-09-25 2013-09-25 半導体装置

Publications (3)

Publication Number Publication Date
JP2015065296A JP2015065296A (ja) 2015-04-09
JP2015065296A5 JP2015065296A5 (enExample) 2016-03-24
JP6110769B2 true JP6110769B2 (ja) 2017-04-05

Family

ID=52690244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013198300A Expired - Fee Related JP6110769B2 (ja) 2013-09-25 2013-09-25 半導体装置

Country Status (3)

Country Link
US (2) US9257400B2 (enExample)
JP (1) JP6110769B2 (enExample)
CN (1) CN104465592B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017037911A (ja) * 2015-08-07 2017-02-16 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2017112327A (ja) * 2015-12-18 2017-06-22 ルネサスエレクトロニクス株式会社 半導体装置
CN111383542A (zh) 2018-12-29 2020-07-07 广东聚华印刷显示技术有限公司 像素结构和显示面板
US11393774B2 (en) 2019-08-21 2022-07-19 Stmicroelectronics, Inc. Semiconductor device having cavities at an interface of an encapsulant and a die pad or leads

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08130284A (ja) * 1994-10-31 1996-05-21 Fuji Electric Co Ltd 半導体装置
JP2000156464A (ja) * 1998-11-20 2000-06-06 Hitachi Ltd 半導体装置の製造方法
US6476474B1 (en) * 2000-10-10 2002-11-05 Siliconware Precision Industries Co., Ltd. Dual-die package structure and method for fabricating the same
JP3670625B2 (ja) * 2001-06-13 2005-07-13 松下電器産業株式会社 半導体装置およびその製造方法
JP2004296613A (ja) * 2003-03-26 2004-10-21 Renesas Technology Corp 半導体装置
JP2005150647A (ja) * 2003-11-20 2005-06-09 Renesas Technology Corp 半導体装置及びその製造方法
JP4759948B2 (ja) * 2004-07-28 2011-08-31 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2007165459A (ja) * 2005-12-12 2007-06-28 Mitsubishi Electric Corp マルチチップモジュール
JP2008091627A (ja) * 2006-10-02 2008-04-17 Toshiba Corp 半導体集積チップ及び半導体装置
JP5646830B2 (ja) * 2009-09-02 2014-12-24 ルネサスエレクトロニクス株式会社 半導体装置、半導体装置の製造方法、及びリードフレーム
JP5667381B2 (ja) * 2010-06-01 2015-02-12 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置及びその製造方法
KR20140011687A (ko) * 2012-07-18 2014-01-29 삼성전자주식회사 반도체 패키지 및 그의 제조 방법
US9379048B2 (en) * 2013-02-28 2016-06-28 Semiconductor Components Industries, Llc Dual-flag stacked die package

Also Published As

Publication number Publication date
CN104465592B (zh) 2018-10-19
US20150084209A1 (en) 2015-03-26
HK1207743A1 (en) 2016-02-05
US9257400B2 (en) 2016-02-09
US20160111357A1 (en) 2016-04-21
CN104465592A (zh) 2015-03-25
JP2015065296A (ja) 2015-04-09

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