JP6080451B2 - 基板処理装置、半導体装置の製造方法、及び熱電対支持体 - Google Patents

基板処理装置、半導体装置の製造方法、及び熱電対支持体 Download PDF

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Publication number
JP6080451B2
JP6080451B2 JP2012210264A JP2012210264A JP6080451B2 JP 6080451 B2 JP6080451 B2 JP 6080451B2 JP 2012210264 A JP2012210264 A JP 2012210264A JP 2012210264 A JP2012210264 A JP 2012210264A JP 6080451 B2 JP6080451 B2 JP 6080451B2
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thermocouple
tube
reaction tube
insulating tube
insulating
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Japanese (ja)
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JP2014067766A5 (enExample
JP2014067766A (ja
Inventor
山口　英人
英人 山口
哲也 小杉
哲也 小杉
上野　正昭
正昭 上野
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Kokusai Denki Electric Inc
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Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
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Priority to JP2012210264A priority Critical patent/JP6080451B2/ja
Priority to KR1020130103884A priority patent/KR101543375B1/ko
Priority to TW104129332A priority patent/TW201546905A/zh
Priority to TW102132387A priority patent/TWI511203B/zh
Priority to US14/033,880 priority patent/US20140120636A1/en
Publication of JP2014067766A publication Critical patent/JP2014067766A/ja
Priority to KR1020150029724A priority patent/KR101579501B1/ko
Publication of JP2014067766A5 publication Critical patent/JP2014067766A5/ja
Application granted granted Critical
Publication of JP6080451B2 publication Critical patent/JP6080451B2/ja
Priority to US15/789,311 priority patent/US10418293B2/en
Priority to US16/531,540 priority patent/US11049742B2/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
JP2012210264A 2012-09-25 2012-09-25 基板処理装置、半導体装置の製造方法、及び熱電対支持体 Active JP6080451B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2012210264A JP6080451B2 (ja) 2012-09-25 2012-09-25 基板処理装置、半導体装置の製造方法、及び熱電対支持体
KR1020130103884A KR101543375B1 (ko) 2012-09-25 2013-08-30 기판 처리 장치, 반도체 장치의 제조 방법 및 온도 검출 방법
TW102132387A TWI511203B (zh) 2012-09-25 2013-09-09 A substrate processing apparatus, a manufacturing method of a semiconductor device, and a temperature detection method
TW104129332A TW201546905A (zh) 2012-09-25 2013-09-09 熱電偶支撐體、基板處理裝置、溫度檢測方法及半導體裝置之製造方法
US14/033,880 US20140120636A1 (en) 2012-09-25 2013-09-23 Substrate processing apparatus, method of manufacturing semiconductor device, and thermocouple support
KR1020150029724A KR101579501B1 (ko) 2012-09-25 2015-03-03 기판 처리 장치, 반도체 장치의 제조 방법 및 온도 검출 방법
US15/789,311 US10418293B2 (en) 2012-09-25 2017-10-20 Substrate processing apparatus, method of manufacturing semiconductor device, and thermocouple support
US16/531,540 US11049742B2 (en) 2012-09-25 2019-08-05 Substrate processing apparatus, method of manufacturing semiconductor device, and thermocouple support

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012210264A JP6080451B2 (ja) 2012-09-25 2012-09-25 基板処理装置、半導体装置の製造方法、及び熱電対支持体

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JP2014067766A JP2014067766A (ja) 2014-04-17
JP2014067766A5 JP2014067766A5 (enExample) 2015-11-12
JP6080451B2 true JP6080451B2 (ja) 2017-02-15

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US (3) US20140120636A1 (enExample)
JP (1) JP6080451B2 (enExample)
KR (2) KR101543375B1 (enExample)
TW (2) TWI511203B (enExample)

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US20230036107A1 (en) * 2021-07-27 2023-02-02 Mitsubishi Electric Corporation Method of manufacturing semiconductor device and semiconductor manufacturing apparatus

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JP6579974B2 (ja) * 2015-02-25 2019-09-25 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、温度センサ及び半導体装置の製造方法
US10228291B2 (en) 2015-02-25 2019-03-12 Kokusai Electric Corporation Substrate processing apparatus, and thermocouple
US10535538B2 (en) * 2017-01-26 2020-01-14 Gary Hillman System and method for heat treatment of substrates
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KR20190008101A (ko) 2017-07-14 2019-01-23 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 기판 보지구 및 반도체 장치의 제조 방법
US10998205B2 (en) * 2018-09-14 2021-05-04 Kokusai Electric Corporation Substrate processing apparatus and manufacturing method of semiconductor device
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CN114846587A (zh) * 2020-03-02 2022-08-02 株式会社国际电气 基板处理装置、半导体装置的制造方法和存储介质
JP6916920B1 (ja) * 2020-03-04 2021-08-11 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、治具、半導体装置の製造方法および基板処理装置の校正方法
TWI736449B (zh) * 2020-10-19 2021-08-11 中國鋼鐵股份有限公司 熱電偶之修復與固定裝置及其使用方法
JP7236420B2 (ja) * 2020-10-29 2023-03-09 株式会社Kokusai Electric 温度センサ、ヒータユニット、基板処理装置及び半導体装置の製造方法
CN114234763B (zh) * 2021-12-31 2024-07-26 拓荆科技股份有限公司 位置调整量监测装置
CN114527009B (zh) * 2022-02-09 2023-07-04 南京钢铁股份有限公司 一种在热模拟试验机上熔化凝固过程控制方法
WO2025074667A1 (ja) 2023-10-06 2025-04-10 株式会社Kokusai Electric 温度測定アセンブリ、基板処理装置、基板処理方法、半導体装置の製造方法及びプログラム
KR102763912B1 (ko) 2024-07-11 2025-02-10 (주) 예스티 파티클 비산 방지 기능을 갖는 고압 어닐링 장치

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Publication number Priority date Publication date Assignee Title
US20230036107A1 (en) * 2021-07-27 2023-02-02 Mitsubishi Electric Corporation Method of manufacturing semiconductor device and semiconductor manufacturing apparatus
US12451355B2 (en) * 2021-07-27 2025-10-21 Mitsubishi Electric Corporation Method of manufacturing semiconductor device and semiconductor manufacturing apparatus

Also Published As

Publication number Publication date
TWI511203B (zh) 2015-12-01
US10418293B2 (en) 2019-09-17
TWI562240B (enExample) 2016-12-11
JP2014067766A (ja) 2014-04-17
KR20150035904A (ko) 2015-04-07
TW201546905A (zh) 2015-12-16
KR20140039987A (ko) 2014-04-02
KR101543375B1 (ko) 2015-08-11
TW201421585A (zh) 2014-06-01
US20190355630A1 (en) 2019-11-21
US11049742B2 (en) 2021-06-29
US20140120636A1 (en) 2014-05-01
US20180040520A1 (en) 2018-02-08
KR101579501B1 (ko) 2015-12-22

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