TWI562240B - - Google Patents
Info
- Publication number
- TWI562240B TWI562240B TW104129332A TW104129332A TWI562240B TW I562240 B TWI562240 B TW I562240B TW 104129332 A TW104129332 A TW 104129332A TW 104129332 A TW104129332 A TW 104129332A TW I562240 B TWI562240 B TW I562240B
- Authority
- TW
- Taiwan
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0602—Temperature monitoring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0434—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
- H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012210264A JP6080451B2 (ja) | 2012-09-25 | 2012-09-25 | 基板処理装置、半導体装置の製造方法、及び熱電対支持体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201546905A TW201546905A (zh) | 2015-12-16 |
| TWI562240B true TWI562240B (enExample) | 2016-12-11 |
Family
ID=50547606
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102132387A TWI511203B (zh) | 2012-09-25 | 2013-09-09 | A substrate processing apparatus, a manufacturing method of a semiconductor device, and a temperature detection method |
| TW104129332A TW201546905A (zh) | 2012-09-25 | 2013-09-09 | 熱電偶支撐體、基板處理裝置、溫度檢測方法及半導體裝置之製造方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102132387A TWI511203B (zh) | 2012-09-25 | 2013-09-09 | A substrate processing apparatus, a manufacturing method of a semiconductor device, and a temperature detection method |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US20140120636A1 (enExample) |
| JP (1) | JP6080451B2 (enExample) |
| KR (2) | KR101543375B1 (enExample) |
| TW (2) | TWI511203B (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140134838A1 (en) * | 2012-11-09 | 2014-05-15 | Primestar Solar, Inc. | Methods of annealing a conductive transparent oxide film layer for use in a thin film photovoltaic device |
| US9700951B2 (en) * | 2014-05-28 | 2017-07-11 | Hakko Corporation | Heater sensor complex with high thermal capacity |
| JP6333126B2 (ja) | 2014-08-29 | 2018-05-30 | 東京エレクトロン株式会社 | 磁気アニール装置及び磁気アニール方法 |
| DE102014119593A1 (de) * | 2014-12-23 | 2016-06-23 | Endress + Hauser Wetzer Gmbh + Co. Kg | Temperaturfühler |
| JP6579974B2 (ja) * | 2015-02-25 | 2019-09-25 | 株式会社Kokusai Electric | 基板処理装置、温度センサ及び半導体装置の製造方法 |
| US10228291B2 (en) | 2015-02-25 | 2019-03-12 | Kokusai Electric Corporation | Substrate processing apparatus, and thermocouple |
| US10535538B2 (en) * | 2017-01-26 | 2020-01-14 | Gary Hillman | System and method for heat treatment of substrates |
| JP6857156B2 (ja) | 2017-07-14 | 2021-04-14 | 株式会社Kokusai Electric | 基板処理装置、基板保持具及び半導体装置の製造方法 |
| KR20190008101A (ko) | 2017-07-14 | 2019-01-23 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 기판 보지구 및 반도체 장치의 제조 방법 |
| US10998205B2 (en) * | 2018-09-14 | 2021-05-04 | Kokusai Electric Corporation | Substrate processing apparatus and manufacturing method of semiconductor device |
| JP7034324B2 (ja) | 2018-09-18 | 2022-03-11 | 株式会社Kokusai Electric | 基板温度センサ、温度制御システム、基板処理装置および半導体装置の製造方法 |
| JP7117398B2 (ja) * | 2019-01-07 | 2022-08-12 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法およびヒータユニット |
| CN114846587A (zh) * | 2020-03-02 | 2022-08-02 | 株式会社国际电气 | 基板处理装置、半导体装置的制造方法和存储介质 |
| JP6916920B1 (ja) * | 2020-03-04 | 2021-08-11 | 株式会社Kokusai Electric | 基板処理装置、治具、半導体装置の製造方法および基板処理装置の校正方法 |
| TWI736449B (zh) * | 2020-10-19 | 2021-08-11 | 中國鋼鐵股份有限公司 | 熱電偶之修復與固定裝置及其使用方法 |
| JP7236420B2 (ja) * | 2020-10-29 | 2023-03-09 | 株式会社Kokusai Electric | 温度センサ、ヒータユニット、基板処理装置及び半導体装置の製造方法 |
| JP7565885B2 (ja) * | 2021-07-27 | 2024-10-11 | 三菱電機株式会社 | 半導体装置の製造方法および半導体製造装置 |
| CN114234763B (zh) * | 2021-12-31 | 2024-07-26 | 拓荆科技股份有限公司 | 位置调整量监测装置 |
| CN114527009B (zh) * | 2022-02-09 | 2023-07-04 | 南京钢铁股份有限公司 | 一种在热模拟试验机上熔化凝固过程控制方法 |
| WO2025074667A1 (ja) | 2023-10-06 | 2025-04-10 | 株式会社Kokusai Electric | 温度測定アセンブリ、基板処理装置、基板処理方法、半導体装置の製造方法及びプログラム |
| KR102763912B1 (ko) | 2024-07-11 | 2025-02-10 | (주) 예스티 | 파티클 비산 방지 기능을 갖는 고압 어닐링 장치 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63121431U (enExample) * | 1987-01-30 | 1988-08-05 | ||
| JP2006173531A (ja) * | 2004-12-20 | 2006-06-29 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| TW201140699A (en) * | 2006-03-07 | 2011-11-16 | Hitachi Int Electric Inc | Substrate processing device and substrate processing method thereof |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3165426A (en) * | 1962-07-30 | 1965-01-12 | Beckman Paul | Thermopile |
| US3400587A (en) * | 1965-09-03 | 1968-09-10 | Bethlehem Steel Corp | Apparatus for measuring the temperature of a moving surface |
| US4377550A (en) * | 1981-01-29 | 1983-03-22 | The United States Of America As Represented By The United States Department Of Energy | High temperature liquid level sensor |
| JPH0648217B2 (ja) * | 1987-12-24 | 1994-06-22 | 川惣電機工業株式会社 | 溶融金属の連続測温装置 |
| US5517594A (en) * | 1994-10-17 | 1996-05-14 | Relman, Inc. | Thermal reactor optimization |
| JP3471100B2 (ja) * | 1994-11-07 | 2003-11-25 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
| JPH08210923A (ja) * | 1995-02-06 | 1996-08-20 | Kokusai Electric Co Ltd | 加熱炉用の炉内温度測定器 |
| JPH0997787A (ja) * | 1995-09-30 | 1997-04-08 | Tokyo Electron Ltd | 処理装置 |
| JPH1025577A (ja) * | 1996-07-12 | 1998-01-27 | Tokyo Electron Ltd | 成膜処理装置 |
| JP2000150404A (ja) * | 1998-11-11 | 2000-05-30 | Sony Corp | 熱処理装置 |
| WO2003040673A2 (en) * | 2001-11-02 | 2003-05-15 | Phipps Jack M | Temperature sensor with enhanced ambient air temperature detection |
| JP4557499B2 (ja) | 2003-04-07 | 2010-10-06 | 株式会社日立国際電気 | 基板処理装置 |
| US20050098107A1 (en) * | 2003-09-24 | 2005-05-12 | Du Bois Dale R. | Thermal processing system with cross-flow liner |
| JP4396547B2 (ja) * | 2004-06-28 | 2010-01-13 | 東京エレクトロン株式会社 | 成膜方法、成膜装置及び記憶媒体 |
| JP2006090742A (ja) | 2004-09-21 | 2006-04-06 | Okazaki Mfg Co Ltd | シース型k熱電対 |
| KR100669861B1 (ko) * | 2005-03-21 | 2007-01-16 | 삼성전자주식회사 | 반도체 기판 가공 장치 |
| KR20060110951A (ko) * | 2005-04-21 | 2006-10-26 | 삼성전자주식회사 | 스파이크형 열전대 |
| WO2007018142A1 (ja) * | 2005-08-09 | 2007-02-15 | Hitachi Kokusai Electric Inc. | 基板処理装置、基板の製造方法及び半導体装置の製造方法 |
| JP2008227363A (ja) * | 2007-03-15 | 2008-09-25 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| US7874726B2 (en) * | 2007-05-24 | 2011-01-25 | Asm America, Inc. | Thermocouple |
| KR101012082B1 (ko) * | 2007-06-25 | 2011-02-07 | 데이또꾸샤 가부시키가이샤 | 가열 장치 및 이것을 채용한 기판 처리 장치 및 반도체장치의 제조 방법 및 절연체 |
| US20090095422A1 (en) * | 2007-09-06 | 2009-04-16 | Hitachi Kokusai Electric Inc. | Semiconductor manufacturing apparatus and substrate processing method |
| KR101097945B1 (ko) * | 2007-10-19 | 2011-12-22 | 가부시키가이샤 히다치 고쿠사이 덴키 | 온도 제어 방법, 온도 보정치 취득 방법, 반도체 디바이스를 제조하기 위한 방법, 기판 처리 장치 |
| US7946762B2 (en) * | 2008-06-17 | 2011-05-24 | Asm America, Inc. | Thermocouple |
| JP5647502B2 (ja) * | 2010-02-23 | 2014-12-24 | 株式会社日立国際電気 | 熱処理装置、半導体装置の製造方法及び基板処理方法。 |
| KR101172376B1 (ko) * | 2010-06-11 | 2012-08-08 | 한국수력원자력 주식회사 | 외장 열전대를 이용한 용융금속 액위 측정 장치 |
| KR101196723B1 (ko) * | 2010-12-31 | 2012-11-07 | 주식회사수성기술 | 다결정 실리콘 잉곳 제조장치용 열전대 |
| JP5980551B2 (ja) * | 2011-07-13 | 2016-08-31 | 株式会社日立国際電気 | 温度検出部、基板処理装置、及び半導体装置の製造方法 |
-
2012
- 2012-09-25 JP JP2012210264A patent/JP6080451B2/ja active Active
-
2013
- 2013-08-30 KR KR1020130103884A patent/KR101543375B1/ko active Active
- 2013-09-09 TW TW102132387A patent/TWI511203B/zh active
- 2013-09-09 TW TW104129332A patent/TW201546905A/zh unknown
- 2013-09-23 US US14/033,880 patent/US20140120636A1/en not_active Abandoned
-
2015
- 2015-03-03 KR KR1020150029724A patent/KR101579501B1/ko active Active
-
2017
- 2017-10-20 US US15/789,311 patent/US10418293B2/en active Active
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2019
- 2019-08-05 US US16/531,540 patent/US11049742B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63121431U (enExample) * | 1987-01-30 | 1988-08-05 | ||
| JP2006173531A (ja) * | 2004-12-20 | 2006-06-29 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| TW201140699A (en) * | 2006-03-07 | 2011-11-16 | Hitachi Int Electric Inc | Substrate processing device and substrate processing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI511203B (zh) | 2015-12-01 |
| US10418293B2 (en) | 2019-09-17 |
| JP6080451B2 (ja) | 2017-02-15 |
| JP2014067766A (ja) | 2014-04-17 |
| KR20150035904A (ko) | 2015-04-07 |
| TW201546905A (zh) | 2015-12-16 |
| KR20140039987A (ko) | 2014-04-02 |
| KR101543375B1 (ko) | 2015-08-11 |
| TW201421585A (zh) | 2014-06-01 |
| US20190355630A1 (en) | 2019-11-21 |
| US11049742B2 (en) | 2021-06-29 |
| US20140120636A1 (en) | 2014-05-01 |
| US20180040520A1 (en) | 2018-02-08 |
| KR101579501B1 (ko) | 2015-12-22 |