TWI562240B - - Google Patents

Info

Publication number
TWI562240B
TWI562240B TW104129332A TW104129332A TWI562240B TW I562240 B TWI562240 B TW I562240B TW 104129332 A TW104129332 A TW 104129332A TW 104129332 A TW104129332 A TW 104129332A TW I562240 B TWI562240 B TW I562240B
Authority
TW
Taiwan
Application number
TW104129332A
Other versions
TW201546905A (zh
Inventor
Hideto Yamaguchi
Tetsuya Kosugi
Masaaki Ueno
Original Assignee
Hitachi Int Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Int Electric Inc filed Critical Hitachi Int Electric Inc
Publication of TW201546905A publication Critical patent/TW201546905A/zh
Application granted granted Critical
Publication of TWI562240B publication Critical patent/TWI562240B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW104129332A 2012-09-25 2013-09-09 熱電偶支撐體、基板處理裝置、溫度檢測方法及半導體裝置之製造方法 TW201546905A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012210264A JP6080451B2 (ja) 2012-09-25 2012-09-25 基板処理装置、半導体装置の製造方法、及び熱電対支持体

Publications (2)

Publication Number Publication Date
TW201546905A TW201546905A (zh) 2015-12-16
TWI562240B true TWI562240B (zh) 2016-12-11

Family

ID=50547606

Family Applications (2)

Application Number Title Priority Date Filing Date
TW102132387A TWI511203B (zh) 2012-09-25 2013-09-09 A substrate processing apparatus, a manufacturing method of a semiconductor device, and a temperature detection method
TW104129332A TW201546905A (zh) 2012-09-25 2013-09-09 熱電偶支撐體、基板處理裝置、溫度檢測方法及半導體裝置之製造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW102132387A TWI511203B (zh) 2012-09-25 2013-09-09 A substrate processing apparatus, a manufacturing method of a semiconductor device, and a temperature detection method

Country Status (4)

Country Link
US (3) US20140120636A1 (zh)
JP (1) JP6080451B2 (zh)
KR (2) KR101543375B1 (zh)
TW (2) TWI511203B (zh)

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US20140134838A1 (en) * 2012-11-09 2014-05-15 Primestar Solar, Inc. Methods of annealing a conductive transparent oxide film layer for use in a thin film photovoltaic device
US9700951B2 (en) * 2014-05-28 2017-07-11 Hakko Corporation Heater sensor complex with high thermal capacity
JP6333126B2 (ja) 2014-08-29 2018-05-30 東京エレクトロン株式会社 磁気アニール装置及び磁気アニール方法
DE102014119593A1 (de) * 2014-12-23 2016-06-23 Endress + Hauser Wetzer Gmbh + Co. Kg Temperaturfühler
JP6579974B2 (ja) * 2015-02-25 2019-09-25 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、温度センサ及び半導体装置の製造方法
US10228291B2 (en) 2015-02-25 2019-03-12 Kokusai Electric Corporation Substrate processing apparatus, and thermocouple
US10535538B2 (en) * 2017-01-26 2020-01-14 Gary Hillman System and method for heat treatment of substrates
KR20190008101A (ko) 2017-07-14 2019-01-23 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 기판 보지구 및 반도체 장치의 제조 방법
JP6857156B2 (ja) 2017-07-14 2021-04-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、基板保持具及び半導体装置の製造方法
US10998205B2 (en) * 2018-09-14 2021-05-04 Kokusai Electric Corporation Substrate processing apparatus and manufacturing method of semiconductor device
JP7034324B2 (ja) 2018-09-18 2022-03-11 株式会社Kokusai Electric 基板温度センサ、温度制御システム、基板処理装置および半導体装置の製造方法
WO2020145183A1 (ja) * 2019-01-07 2020-07-16 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法およびヒータユニット
CN114846587A (zh) * 2020-03-02 2022-08-02 株式会社国际电气 基板处理装置、半导体装置的制造方法和存储介质
JP6916920B1 (ja) * 2020-03-04 2021-08-11 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、治具、半導体装置の製造方法および基板処理装置の校正方法
TWI736449B (zh) * 2020-10-19 2021-08-11 中國鋼鐵股份有限公司 熱電偶之修復與固定裝置及其使用方法
CN114234763B (zh) * 2021-12-31 2024-07-26 拓荆科技股份有限公司 位置调整量监测装置
CN114527009B (zh) * 2022-02-09 2023-07-04 南京钢铁股份有限公司 一种在热模拟试验机上熔化凝固过程控制方法

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JPS63121431U (zh) * 1987-01-30 1988-08-05
JP2006173531A (ja) * 2004-12-20 2006-06-29 Hitachi Kokusai Electric Inc 基板処理装置
TW201140699A (en) * 2006-03-07 2011-11-16 Hitachi Int Electric Inc Substrate processing device and substrate processing method thereof

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JPH0997787A (ja) * 1995-09-30 1997-04-08 Tokyo Electron Ltd 処理装置
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US20090095422A1 (en) * 2007-09-06 2009-04-16 Hitachi Kokusai Electric Inc. Semiconductor manufacturing apparatus and substrate processing method
KR101097945B1 (ko) * 2007-10-19 2011-12-22 가부시키가이샤 히다치 고쿠사이 덴키 온도 제어 방법, 온도 보정치 취득 방법, 반도체 디바이스를 제조하기 위한 방법, 기판 처리 장치
US7946762B2 (en) * 2008-06-17 2011-05-24 Asm America, Inc. Thermocouple
JP5647502B2 (ja) * 2010-02-23 2014-12-24 株式会社日立国際電気 熱処理装置、半導体装置の製造方法及び基板処理方法。
KR101172376B1 (ko) * 2010-06-11 2012-08-08 한국수력원자력 주식회사 외장 열전대를 이용한 용융금속 액위 측정 장치
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JP5980551B2 (ja) * 2011-07-13 2016-08-31 株式会社日立国際電気 温度検出部、基板処理装置、及び半導体装置の製造方法

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JPS63121431U (zh) * 1987-01-30 1988-08-05
JP2006173531A (ja) * 2004-12-20 2006-06-29 Hitachi Kokusai Electric Inc 基板処理装置
TW201140699A (en) * 2006-03-07 2011-11-16 Hitachi Int Electric Inc Substrate processing device and substrate processing method thereof

Also Published As

Publication number Publication date
TW201421585A (zh) 2014-06-01
US20190355630A1 (en) 2019-11-21
KR101543375B1 (ko) 2015-08-11
KR101579501B1 (ko) 2015-12-22
TW201546905A (zh) 2015-12-16
US20140120636A1 (en) 2014-05-01
KR20140039987A (ko) 2014-04-02
JP6080451B2 (ja) 2017-02-15
TWI511203B (zh) 2015-12-01
US20180040520A1 (en) 2018-02-08
US11049742B2 (en) 2021-06-29
US10418293B2 (en) 2019-09-17
KR20150035904A (ko) 2015-04-07
JP2014067766A (ja) 2014-04-17

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