KR101543375B1 - 기판 처리 장치, 반도체 장치의 제조 방법 및 온도 검출 방법 - Google Patents

기판 처리 장치, 반도체 장치의 제조 방법 및 온도 검출 방법 Download PDF

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KR101543375B1
KR101543375B1 KR1020130103884A KR20130103884A KR101543375B1 KR 101543375 B1 KR101543375 B1 KR 101543375B1 KR 1020130103884 A KR1020130103884 A KR 1020130103884A KR 20130103884 A KR20130103884 A KR 20130103884A KR 101543375 B1 KR101543375 B1 KR 101543375B1
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thermocouple
reaction tube
insulation
tube
substrate
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KR20140039987A (ko
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히데토 야마구치
테츠야 코스기
마사아키 우에노
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가부시키가이샤 히다치 고쿠사이 덴키
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020130103884A 2012-09-25 2013-08-30 기판 처리 장치, 반도체 장치의 제조 방법 및 온도 검출 방법 Active KR101543375B1 (ko)

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JP2012210264A JP6080451B2 (ja) 2012-09-25 2012-09-25 基板処理装置、半導体装置の製造方法、及び熱電対支持体
JPJP-P-2012-210264 2012-09-25

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KR1020150029724A Active KR101579501B1 (ko) 2012-09-25 2015-03-03 기판 처리 장치, 반도체 장치의 제조 방법 및 온도 검출 방법

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US (3) US20140120636A1 (enExample)
JP (1) JP6080451B2 (enExample)
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TW (2) TWI511203B (enExample)

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JP6857156B2 (ja) 2017-07-14 2021-04-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、基板保持具及び半導体装置の製造方法
KR20190008101A (ko) 2017-07-14 2019-01-23 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 기판 보지구 및 반도체 장치의 제조 방법
US10998205B2 (en) * 2018-09-14 2021-05-04 Kokusai Electric Corporation Substrate processing apparatus and manufacturing method of semiconductor device
JP7034324B2 (ja) 2018-09-18 2022-03-11 株式会社Kokusai Electric 基板温度センサ、温度制御システム、基板処理装置および半導体装置の製造方法
JP7117398B2 (ja) * 2019-01-07 2022-08-12 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法およびヒータユニット
CN114846587A (zh) * 2020-03-02 2022-08-02 株式会社国际电气 基板处理装置、半导体装置的制造方法和存储介质
JP6916920B1 (ja) * 2020-03-04 2021-08-11 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、治具、半導体装置の製造方法および基板処理装置の校正方法
TWI736449B (zh) * 2020-10-19 2021-08-11 中國鋼鐵股份有限公司 熱電偶之修復與固定裝置及其使用方法
JP7236420B2 (ja) * 2020-10-29 2023-03-09 株式会社Kokusai Electric 温度センサ、ヒータユニット、基板処理装置及び半導体装置の製造方法
JP7565885B2 (ja) * 2021-07-27 2024-10-11 三菱電機株式会社 半導体装置の製造方法および半導体製造装置
CN114234763B (zh) * 2021-12-31 2024-07-26 拓荆科技股份有限公司 位置调整量监测装置
CN114527009B (zh) * 2022-02-09 2023-07-04 南京钢铁股份有限公司 一种在热模拟试验机上熔化凝固过程控制方法
WO2025074667A1 (ja) 2023-10-06 2025-04-10 株式会社Kokusai Electric 温度測定アセンブリ、基板処理装置、基板処理方法、半導体装置の製造方法及びプログラム
KR102763912B1 (ko) 2024-07-11 2025-02-10 (주) 예스티 파티클 비산 방지 기능을 갖는 고압 어닐링 장치

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TWI511203B (zh) 2015-12-01
US10418293B2 (en) 2019-09-17
JP6080451B2 (ja) 2017-02-15
TWI562240B (enExample) 2016-12-11
JP2014067766A (ja) 2014-04-17
KR20150035904A (ko) 2015-04-07
TW201546905A (zh) 2015-12-16
KR20140039987A (ko) 2014-04-02
TW201421585A (zh) 2014-06-01
US20190355630A1 (en) 2019-11-21
US11049742B2 (en) 2021-06-29
US20140120636A1 (en) 2014-05-01
US20180040520A1 (en) 2018-02-08
KR101579501B1 (ko) 2015-12-22

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