JP6071478B2 - スパッタリングターゲットの作製方法 - Google Patents
スパッタリングターゲットの作製方法 Download PDFInfo
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- JP6071478B2 JP6071478B2 JP2012261121A JP2012261121A JP6071478B2 JP 6071478 B2 JP6071478 B2 JP 6071478B2 JP 2012261121 A JP2012261121 A JP 2012261121A JP 2012261121 A JP2012261121 A JP 2012261121A JP 6071478 B2 JP6071478 B2 JP 6071478B2
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- Prior art keywords
- layer
- film
- oxide semiconductor
- sputtering target
- transistor
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- 230000035699 permeability Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
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- 239000003505 polymerization initiator Substances 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
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- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
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- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Description
本実施の形態では、本発明の一態様であるスパッタリングターゲットの製造方法について図1を参照して説明する。図1は、本実施の形態に係るスパッタリングターゲットの製造方法の一例を示すフローチャートである。
本実施の形態では、半導体装置及び半導体装置の作製方法の一態様を図3(A)及び図3(B)を用いて説明する。
本実施の形態では、実施の形態2とは異なる構造の例を図3(C)及び図3(D)に示す。なお、実施の形態2と同一の箇所は同じ符号を用い、ここでは簡略化のため詳細な説明は省略することとする。
本実施の形態では、実施の形態2とは異なる構造の例を図4(A)及び図4(B)に示す。なお、実施の形態2と同一の箇所は同じ符号を用い、ここでは簡略化のため詳細な説明は省略することとする。
本実施の形態では、実施の形態2とは異なる構造の例を図4(C)及び図4(D)に示す。なお、実施の形態2と同一の箇所は同じ符号を用い、ここでは簡略化のため詳細な説明は省略することとする。
実施の形態2乃至5は、トップゲート型構造の例を示したが、本実施の形態では、ボトムゲート型構造(チャネルストップ型とも呼ぶ)の例を示す。
本実施の形態では、実施の形態6と一部異なる構造のトランジスタの例を図5(C)、及び図5(D)に示す。
本実施の形態では、実施の形態6と一部異なる構造のトランジスタの例を図6(A)、及び図6(B)に示す。
実施の形態6又は実施の形態7又は実施の形態8に示したトランジスタを用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、トランジスタを含む駆動回路の一部又は全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
本実施の形態では、本明細書に示すトランジスタを使用し、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置の一例を、図面を用いて説明する。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、テレビジョン装置(テレビ、又はテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機、携帯型ゲーム機、携帯情報端末、音響再生装置、遊技機(パチンコ機、スロットマシン等)、ゲーム筐体が挙げられる。これらの電子機器の具体例を図12に示す。
401:ゲート電極層
402:ゲート絶縁層
403:酸化物半導体層
403a:低抵抗領域
403b:低抵抗領域
403c:チャネル形成領域
405a:ソース電極層
405b:ドレイン電極層
406:絶縁層
407:絶縁層
412a:側壁絶縁層
412b:側壁絶縁層
413:絶縁層
414:絶縁層
415:絶縁層
420:トランジスタ
421:トランジスタ
422:トランジスタ
423:トランジスタ
424:トランジスタ
425:トランジスタ
426:トランジスタ
435a、435b:開口
436:下地絶縁層
465a:ソース配線層
465b:ドレイン配線層
Claims (3)
- インジウム及び亜鉛が所望の組成を有する膜を成膜するためのスパッタリングターゲットの作製方法であって、
インジウムを含む酸化物の第1の粉末、及び亜鉛を含む酸化物の第2の粉末を秤量して混合し、
混合された前記第1の粉末及び前記第2の粉末を加熱して、インジウム及び亜鉛を含む結晶を形成し、
前記結晶を粉砕して第3の粉末を形成し、
前記第3の粉末に、亜鉛を含む酸化物の第4の粉末をさらに加えて混合して、第5の粉末を形成し、
前記第5の粉末を焼成してスパッタリングターゲットを作製し、
前記第4の粉末は、前記スパッタリングターゲットの組成が、前記膜の組成よりも亜鉛を多く含むように加えられることを特徴とするスパッタリングターゲットの作製方法。 - ガリウム及び亜鉛が所望の組成を有する膜を成膜するためのスパッタリングターゲットの作製方法であって、
ガリウムを含む酸化物の第1の粉末、及び亜鉛を含む酸化物の第2の粉末を秤量して混合し、
混合された前記第1の粉末及び前記第2の粉末を加熱して、ガリウム及び亜鉛を含む結晶を形成し、
前記結晶を粉砕して第3の粉末を形成し、
前記第3の粉末に、亜鉛を含む酸化物の第4の粉末をさらに加えて混合して、第5の粉末を形成し、
前記第5の粉末を焼成してスパッタリングターゲットを作製し、
前記第4の粉末は、前記スパッタリングターゲットの組成が、前記膜の組成よりも亜鉛を多く含むように加えられることを特徴とするスパッタリングターゲットの作製方法。 - インジウム、ガリウム、及び亜鉛が所望の組成を有する膜を成膜するためのスパッタリングターゲットの作製方法であって、
インジウムを含む酸化物の第1の粉末、ガリウムを含む酸化物の第2の粉末、及び亜鉛を含む酸化物の第3の粉末を秤量して混合し、
混合された前記第1乃至前記第3の粉末を加熱して、インジウム、ガリウム、及び亜鉛を含む結晶を形成し、
前記結晶を粉砕して第4の粉末を形成し、
前記第4の粉末に、亜鉛を含む酸化物の第5の粉末をさらに加えて混合して、第6の粉末を形成し、
前記第6の粉末を焼成してスパッタリングターゲットを作製し、
前記第5の粉末は、前記スパッタリングターゲットの組成が、前記膜の組成よりも亜鉛を多く含むように加えられることを特徴とするスパッタリングターゲットの作製方法。
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2012
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- 2012-11-19 KR KR1020120130983A patent/KR102140165B1/ko active IP Right Grant
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- 2012-11-29 CN CN201811631478.9A patent/CN110079772A/zh active Pending
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JP6412549B2 (ja) | 2018-10-24 |
JP2013136835A (ja) | 2013-07-11 |
US9057126B2 (en) | 2015-06-16 |
TWI580808B (zh) | 2017-05-01 |
CN110079772A (zh) | 2019-08-02 |
KR102140165B1 (ko) | 2020-07-31 |
TW201329266A (zh) | 2013-07-16 |
KR20130060123A (ko) | 2013-06-07 |
JP2017108142A (ja) | 2017-06-15 |
US20130133808A1 (en) | 2013-05-30 |
CN103132030A (zh) | 2013-06-05 |
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