JP6061545B2 - 半導体装置の製造方法、基板処理方法および基板処理装置 - Google Patents

半導体装置の製造方法、基板処理方法および基板処理装置 Download PDF

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Publication number
JP6061545B2
JP6061545B2 JP2012178640A JP2012178640A JP6061545B2 JP 6061545 B2 JP6061545 B2 JP 6061545B2 JP 2012178640 A JP2012178640 A JP 2012178640A JP 2012178640 A JP2012178640 A JP 2012178640A JP 6061545 B2 JP6061545 B2 JP 6061545B2
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Japan
Prior art keywords
pressure
gas
flow rate
processing
processing chamber
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Expired - Fee Related
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JP2012178640A
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English (en)
Japanese (ja)
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JP2014036216A5 (enExample
JP2014036216A (ja
Inventor
吉田　秀成
秀成 吉田
谷山　智志
智志 谷山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
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Application filed by Hitachi Kokusai Electric Inc, Kokusai Denki Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP2012178640A priority Critical patent/JP6061545B2/ja
Priority to KR1020130094066A priority patent/KR20140020782A/ko
Priority to TW102128460A priority patent/TWI547993B/zh
Priority to US13/963,695 priority patent/US8791031B2/en
Publication of JP2014036216A publication Critical patent/JP2014036216A/ja
Priority to KR1020150099498A priority patent/KR101614275B1/ko
Publication of JP2014036216A5 publication Critical patent/JP2014036216A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
JP2012178640A 2012-08-10 2012-08-10 半導体装置の製造方法、基板処理方法および基板処理装置 Expired - Fee Related JP6061545B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012178640A JP6061545B2 (ja) 2012-08-10 2012-08-10 半導体装置の製造方法、基板処理方法および基板処理装置
KR1020130094066A KR20140020782A (ko) 2012-08-10 2013-08-08 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치
TW102128460A TWI547993B (zh) 2012-08-10 2013-08-08 A semiconductor device manufacturing method, a substrate processing method, and a substrate processing apparatus
US13/963,695 US8791031B2 (en) 2012-08-10 2013-08-09 Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus
KR1020150099498A KR101614275B1 (ko) 2012-08-10 2015-07-14 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012178640A JP6061545B2 (ja) 2012-08-10 2012-08-10 半導体装置の製造方法、基板処理方法および基板処理装置

Publications (3)

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JP2014036216A JP2014036216A (ja) 2014-02-24
JP2014036216A5 JP2014036216A5 (enExample) 2015-09-17
JP6061545B2 true JP6061545B2 (ja) 2017-01-18

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Country Status (4)

Country Link
US (1) US8791031B2 (enExample)
JP (1) JP6061545B2 (enExample)
KR (2) KR20140020782A (enExample)
TW (1) TWI547993B (enExample)

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KR101427726B1 (ko) * 2011-12-27 2014-08-07 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 장치의 제조 방법
US10100407B2 (en) * 2014-12-19 2018-10-16 Lam Research Corporation Hardware and process for film uniformity improvement
KR102487805B1 (ko) * 2015-04-28 2023-01-12 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
JP6606551B2 (ja) * 2015-08-04 2019-11-13 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法および記録媒体
US11332824B2 (en) 2016-09-13 2022-05-17 Lam Research Corporation Systems and methods for reducing effluent build-up in a pumping exhaust system
US10115607B2 (en) * 2016-09-16 2018-10-30 Applied Materials, Inc. Method and apparatus for wafer outgassing control
JP6763274B2 (ja) * 2016-10-14 2020-09-30 東京エレクトロン株式会社 成膜装置、成膜装置のクリーニング方法及び記憶媒体
JP6864705B2 (ja) * 2018-03-29 2021-04-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、制御システム及び半導体装置の製造方法
JP6681452B1 (ja) * 2018-10-19 2020-04-15 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置及び半導体装置の製造方法
KR102032923B1 (ko) * 2019-01-07 2019-10-16 무진전자 주식회사 웨이퍼 처리 장치
KR102208815B1 (ko) * 2019-05-10 2021-01-28 주식회사 뉴파워 프라즈마 기판 처리 시스템의 제어 방법
TWI866102B (zh) * 2019-05-28 2024-12-11 日商國際電氣股份有限公司 半導體裝置的製造方法，基板處理裝置及程式
JP7482720B2 (ja) * 2020-08-28 2024-05-14 東京エレクトロン株式会社 クリーニング方法及び処理装置
JP7420777B2 (ja) * 2021-09-21 2024-01-23 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置及びプログラム
CN114005767B (zh) * 2021-10-29 2025-10-10 北京北方华创微电子装备有限公司 半导体热处理设备及其排气装置
CN115440633B (zh) * 2022-10-17 2023-07-11 北京北方华创微电子装备有限公司 半导体工艺设备和排气调节机构
US20250122621A1 (en) * 2023-10-13 2025-04-17 Applied Materials, Inc. Process chamber gas flow improvement

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Also Published As

Publication number Publication date
KR101614275B1 (ko) 2016-04-21
JP2014036216A (ja) 2014-02-24
KR20150088229A (ko) 2015-07-31
KR20140020782A (ko) 2014-02-19
US20140045278A1 (en) 2014-02-13
US8791031B2 (en) 2014-07-29
TW201421573A (zh) 2014-06-01
TWI547993B (zh) 2016-09-01

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