TWI547993B - A semiconductor device manufacturing method, a substrate processing method, and a substrate processing apparatus - Google Patents

A semiconductor device manufacturing method, a substrate processing method, and a substrate processing apparatus Download PDF

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Publication number
TWI547993B
TWI547993B TW102128460A TW102128460A TWI547993B TW I547993 B TWI547993 B TW I547993B TW 102128460 A TW102128460 A TW 102128460A TW 102128460 A TW102128460 A TW 102128460A TW I547993 B TWI547993 B TW I547993B
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TW
Taiwan
Prior art keywords
gas
pressure
processing
flow rate
processing chamber
Prior art date
Application number
TW102128460A
Other languages
English (en)
Chinese (zh)
Other versions
TW201421573A (zh
Inventor
吉田秀成
谷山智志
Original Assignee
日立國際電氣股份有限公司
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Application filed by 日立國際電氣股份有限公司 filed Critical 日立國際電氣股份有限公司
Publication of TW201421573A publication Critical patent/TW201421573A/zh
Application granted granted Critical
Publication of TWI547993B publication Critical patent/TWI547993B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • H10P95/90—
    • H10P14/00—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H10P32/00—
    • H10P72/04—
    • H10P72/0418—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
TW102128460A 2012-08-10 2013-08-08 A semiconductor device manufacturing method, a substrate processing method, and a substrate processing apparatus TWI547993B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012178640A JP6061545B2 (ja) 2012-08-10 2012-08-10 半導体装置の製造方法、基板処理方法および基板処理装置

Publications (2)

Publication Number Publication Date
TW201421573A TW201421573A (zh) 2014-06-01
TWI547993B true TWI547993B (zh) 2016-09-01

Family

ID=50066492

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102128460A TWI547993B (zh) 2012-08-10 2013-08-08 A semiconductor device manufacturing method, a substrate processing method, and a substrate processing apparatus

Country Status (4)

Country Link
US (1) US8791031B2 (enExample)
JP (1) JP6061545B2 (enExample)
KR (2) KR20140020782A (enExample)
TW (1) TWI547993B (enExample)

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KR101427726B1 (ko) * 2011-12-27 2014-08-07 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 장치의 제조 방법
US10100407B2 (en) * 2014-12-19 2018-10-16 Lam Research Corporation Hardware and process for film uniformity improvement
KR102487805B1 (ko) * 2015-04-28 2023-01-12 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
WO2017022366A1 (ja) * 2015-08-04 2017-02-09 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体
US11332824B2 (en) 2016-09-13 2022-05-17 Lam Research Corporation Systems and methods for reducing effluent build-up in a pumping exhaust system
US10115607B2 (en) * 2016-09-16 2018-10-30 Applied Materials, Inc. Method and apparatus for wafer outgassing control
JP6763274B2 (ja) * 2016-10-14 2020-09-30 東京エレクトロン株式会社 成膜装置、成膜装置のクリーニング方法及び記憶媒体
JP6864705B2 (ja) * 2018-03-29 2021-04-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、制御システム及び半導体装置の製造方法
JP6681452B1 (ja) * 2018-10-19 2020-04-15 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置及び半導体装置の製造方法
KR102032923B1 (ko) * 2019-01-07 2019-10-16 무진전자 주식회사 웨이퍼 처리 장치
KR102208815B1 (ko) * 2019-05-10 2021-01-28 주식회사 뉴파워 프라즈마 기판 처리 시스템의 제어 방법
TWI866102B (zh) * 2019-05-28 2024-12-11 日商國際電氣股份有限公司 半導體裝置的製造方法，基板處理裝置及程式
JP7482720B2 (ja) * 2020-08-28 2024-05-14 東京エレクトロン株式会社 クリーニング方法及び処理装置
JP7420777B2 (ja) * 2021-09-21 2024-01-23 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置及びプログラム
CN114005767B (zh) * 2021-10-29 2025-10-10 北京北方华创微电子装备有限公司 半导体热处理设备及其排气装置
CN115440633B (zh) * 2022-10-17 2023-07-11 北京北方华创微电子装备有限公司 半导体工艺设备和排气调节机构
US20250122621A1 (en) * 2023-10-13 2025-04-17 Applied Materials, Inc. Process chamber gas flow improvement

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US20050028738A1 (en) * 2001-11-08 2005-02-10 Takanori Saito Thermal treating apparatus
US20090170338A1 (en) * 2006-08-04 2009-07-02 Hitachi Kokusai Electric Inc. Substrate Treatment Device and Manufacturing Method of Semiconductor Device
TW201203426A (en) * 2010-04-23 2012-01-16 Hitachi Int Electric Inc Substrate processing apparatus and method of manufacturing semiconductor device
TW201222637A (en) * 2010-10-26 2012-06-01 Hitachi Int Electric Inc Substrate processing apparatus and semiconductor device manufacturing method

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US6142163A (en) * 1996-03-29 2000-11-07 Lam Research Corporation Method and apparatus for pressure control in vacuum processors
US5758680A (en) * 1996-03-29 1998-06-02 Lam Research Corporation Method and apparatus for pressure control in vacuum processors
JP2008235611A (ja) * 2007-03-21 2008-10-02 Tohoku Univ プラズマ処理装置及びプラズマ処理方法
JP5060916B2 (ja) * 2007-11-05 2012-10-31 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法及び基板処理方法
JP2009218262A (ja) * 2008-03-07 2009-09-24 Omron Corp プラズマ反応炉を用いた電子装置の製造方法
JP2010073823A (ja) * 2008-09-17 2010-04-02 Tokyo Electron Ltd 成膜装置、成膜方法、及びコンピュータ可読記憶媒体
JP2011044446A (ja) * 2009-08-19 2011-03-03 Tokyo Electron Ltd 圧力制御機器、圧力制御方法および基板処理装置
JP2011134781A (ja) * 2009-12-22 2011-07-07 Hitachi Kokusai Electric Inc 半導体装置の製造方法および基板処理装置
JP5921168B2 (ja) * 2011-11-29 2016-05-24 株式会社日立国際電気 基板処理装置
JP5960614B2 (ja) * 2012-03-29 2016-08-02 Ckd株式会社 流体制御システム、流体制御方法

Patent Citations (4)

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US20050028738A1 (en) * 2001-11-08 2005-02-10 Takanori Saito Thermal treating apparatus
US20090170338A1 (en) * 2006-08-04 2009-07-02 Hitachi Kokusai Electric Inc. Substrate Treatment Device and Manufacturing Method of Semiconductor Device
TW201203426A (en) * 2010-04-23 2012-01-16 Hitachi Int Electric Inc Substrate processing apparatus and method of manufacturing semiconductor device
TW201222637A (en) * 2010-10-26 2012-06-01 Hitachi Int Electric Inc Substrate processing apparatus and semiconductor device manufacturing method

Also Published As

Publication number Publication date
KR20140020782A (ko) 2014-02-19
JP2014036216A (ja) 2014-02-24
JP6061545B2 (ja) 2017-01-18
TW201421573A (zh) 2014-06-01
US20140045278A1 (en) 2014-02-13
US8791031B2 (en) 2014-07-29
KR101614275B1 (ko) 2016-04-21
KR20150088229A (ko) 2015-07-31

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