TWI547993B - A semiconductor device manufacturing method, a substrate processing method, and a substrate processing apparatus - Google Patents
A semiconductor device manufacturing method, a substrate processing method, and a substrate processing apparatus Download PDFInfo
- Publication number
- TWI547993B TWI547993B TW102128460A TW102128460A TWI547993B TW I547993 B TWI547993 B TW I547993B TW 102128460 A TW102128460 A TW 102128460A TW 102128460 A TW102128460 A TW 102128460A TW I547993 B TWI547993 B TW I547993B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- pressure
- processing
- flow rate
- processing chamber
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims description 222
- 239000000758 substrate Substances 0.000 title claims description 111
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000003672 processing method Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims description 74
- 230000008569 process Effects 0.000 claims description 70
- 238000010926 purge Methods 0.000 claims description 26
- 238000000746 purification Methods 0.000 claims description 25
- 238000004140 cleaning Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 232
- 235000012431 wafers Nutrition 0.000 description 95
- 239000000463 material Substances 0.000 description 51
- 238000012546 transfer Methods 0.000 description 31
- 239000010408 film Substances 0.000 description 30
- 238000006243 chemical reaction Methods 0.000 description 29
- 239000002994 raw material Substances 0.000 description 23
- 230000007246 mechanism Effects 0.000 description 19
- 230000008859 change Effects 0.000 description 17
- 239000011261 inert gas Substances 0.000 description 17
- 238000007789 sealing Methods 0.000 description 15
- 238000003860 storage Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 230000032258 transport Effects 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 230000003028 elevating effect Effects 0.000 description 8
- 239000007788 liquid Substances 0.000 description 7
- 239000000376 reactant Substances 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000011084 recovery Methods 0.000 description 6
- 230000003213 activating effect Effects 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 238000002407 reforming Methods 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- KDSNLYIMUZNERS-UHFFFAOYSA-N 2-methylpropanamine Chemical compound CC(C)CN KDSNLYIMUZNERS-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011344 liquid material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000001784 detoxification Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- YDLQKLWVKKFPII-UHFFFAOYSA-N timiperone Chemical compound C1=CC(F)=CC=C1C(=O)CCCN1CCC(N2C(NC3=CC=CC=C32)=S)CC1 YDLQKLWVKKFPII-UHFFFAOYSA-N 0.000 description 1
- 229950000809 timiperone Drugs 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012178640A JP6061545B2 (ja) | 2012-08-10 | 2012-08-10 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201421573A TW201421573A (zh) | 2014-06-01 |
| TWI547993B true TWI547993B (zh) | 2016-09-01 |
Family
ID=50066492
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102128460A TWI547993B (zh) | 2012-08-10 | 2013-08-08 | A semiconductor device manufacturing method, a substrate processing method, and a substrate processing apparatus |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8791031B2 (enExample) |
| JP (1) | JP6061545B2 (enExample) |
| KR (2) | KR20140020782A (enExample) |
| TW (1) | TWI547993B (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101427726B1 (ko) * | 2011-12-27 | 2014-08-07 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 반도체 장치의 제조 방법 |
| US10100407B2 (en) * | 2014-12-19 | 2018-10-16 | Lam Research Corporation | Hardware and process for film uniformity improvement |
| KR102487805B1 (ko) * | 2015-04-28 | 2023-01-12 | 주성엔지니어링(주) | 기판 처리 장치 및 기판 처리 방법 |
| JP6606551B2 (ja) * | 2015-08-04 | 2019-11-13 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 基板処理装置、半導体装置の製造方法および記録媒体 |
| US11332824B2 (en) | 2016-09-13 | 2022-05-17 | Lam Research Corporation | Systems and methods for reducing effluent build-up in a pumping exhaust system |
| US10115607B2 (en) * | 2016-09-16 | 2018-10-30 | Applied Materials, Inc. | Method and apparatus for wafer outgassing control |
| JP6763274B2 (ja) * | 2016-10-14 | 2020-09-30 | 東京エレクトロン株式会社 | 成膜装置、成膜装置のクリーニング方法及び記憶媒体 |
| JP6864705B2 (ja) * | 2018-03-29 | 2021-04-28 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 基板処理装置、制御システム及び半導体装置の製造方法 |
| JP6681452B1 (ja) * | 2018-10-19 | 2020-04-15 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 基板処理装置及び半導体装置の製造方法 |
| KR102032923B1 (ko) * | 2019-01-07 | 2019-10-16 | 무진전자 주식회사 | 웨이퍼 처리 장치 |
| KR102208815B1 (ko) * | 2019-05-10 | 2021-01-28 | 주식회사 뉴파워 프라즈마 | 기판 처리 시스템의 제어 방법 |
| TWI866102B (zh) * | 2019-05-28 | 2024-12-11 | 日商國際電氣股份有限公司 | 半導體裝置的製造方法，基板處理裝置及程式 |
| JP7482720B2 (ja) * | 2020-08-28 | 2024-05-14 | 東京エレクトロン株式会社 | クリーニング方法及び処理装置 |
| JP7420777B2 (ja) * | 2021-09-21 | 2024-01-23 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理方法、基板処理装置及びプログラム |
| CN114005767B (zh) * | 2021-10-29 | 2025-10-10 | 北京北方华创微电子装备有限公司 | 半导体热处理设备及其排气装置 |
| CN115440633B (zh) * | 2022-10-17 | 2023-07-11 | 北京北方华创微电子装备有限公司 | 半导体工艺设备和排气调节机构 |
| US20250122621A1 (en) * | 2023-10-13 | 2025-04-17 | Applied Materials, Inc. | Process chamber gas flow improvement |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050028738A1 (en) * | 2001-11-08 | 2005-02-10 | Takanori Saito | Thermal treating apparatus |
| US20090170338A1 (en) * | 2006-08-04 | 2009-07-02 | Hitachi Kokusai Electric Inc. | Substrate Treatment Device and Manufacturing Method of Semiconductor Device |
| TW201203426A (en) * | 2010-04-23 | 2012-01-16 | Hitachi Int Electric Inc | Substrate processing apparatus and method of manufacturing semiconductor device |
| TW201222637A (en) * | 2010-10-26 | 2012-06-01 | Hitachi Int Electric Inc | Substrate processing apparatus and semiconductor device manufacturing method |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6142163A (en) * | 1996-03-29 | 2000-11-07 | Lam Research Corporation | Method and apparatus for pressure control in vacuum processors |
| US5758680A (en) * | 1996-03-29 | 1998-06-02 | Lam Research Corporation | Method and apparatus for pressure control in vacuum processors |
| JP2008235611A (ja) * | 2007-03-21 | 2008-10-02 | Tohoku Univ | プラズマ処理装置及びプラズマ処理方法 |
| JP5060916B2 (ja) * | 2007-11-05 | 2012-10-31 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法及び基板処理方法 |
| JP2009218262A (ja) * | 2008-03-07 | 2009-09-24 | Omron Corp | プラズマ反応炉を用いた電子装置の製造方法 |
| JP2010073823A (ja) * | 2008-09-17 | 2010-04-02 | Tokyo Electron Ltd | 成膜装置、成膜方法、及びコンピュータ可読記憶媒体 |
| JP2011044446A (ja) * | 2009-08-19 | 2011-03-03 | Tokyo Electron Ltd | 圧力制御機器、圧力制御方法および基板処理装置 |
| JP2011134781A (ja) * | 2009-12-22 | 2011-07-07 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法および基板処理装置 |
| JP5921168B2 (ja) * | 2011-11-29 | 2016-05-24 | 株式会社日立国際電気 | 基板処理装置 |
| JP5960614B2 (ja) * | 2012-03-29 | 2016-08-02 | Ckd株式会社 | 流体制御システム、流体制御方法 |
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2012
- 2012-08-10 JP JP2012178640A patent/JP6061545B2/ja not_active Expired - Fee Related
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2013
- 2013-08-08 KR KR1020130094066A patent/KR20140020782A/ko not_active Abandoned
- 2013-08-08 TW TW102128460A patent/TWI547993B/zh active
- 2013-08-09 US US13/963,695 patent/US8791031B2/en active Active
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2015
- 2015-07-14 KR KR1020150099498A patent/KR101614275B1/ko active Active
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| US20050028738A1 (en) * | 2001-11-08 | 2005-02-10 | Takanori Saito | Thermal treating apparatus |
| US20090170338A1 (en) * | 2006-08-04 | 2009-07-02 | Hitachi Kokusai Electric Inc. | Substrate Treatment Device and Manufacturing Method of Semiconductor Device |
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| TW201222637A (en) * | 2010-10-26 | 2012-06-01 | Hitachi Int Electric Inc | Substrate processing apparatus and semiconductor device manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101614275B1 (ko) | 2016-04-21 |
| JP2014036216A (ja) | 2014-02-24 |
| JP6061545B2 (ja) | 2017-01-18 |
| KR20150088229A (ko) | 2015-07-31 |
| KR20140020782A (ko) | 2014-02-19 |
| US20140045278A1 (en) | 2014-02-13 |
| US8791031B2 (en) | 2014-07-29 |
| TW201421573A (zh) | 2014-06-01 |
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