KR20140020782A - 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치 - Google Patents

반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치 Download PDF

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Publication number
KR20140020782A
KR20140020782A KR1020130094066A KR20130094066A KR20140020782A KR 20140020782 A KR20140020782 A KR 20140020782A KR 1020130094066 A KR1020130094066 A KR 1020130094066A KR 20130094066 A KR20130094066 A KR 20130094066A KR 20140020782 A KR20140020782 A KR 20140020782A
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South Korea
Prior art keywords
pressure
gas
processing
flow rate
film
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Abandoned
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KR1020130094066A
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English (en)
Korean (ko)
Inventor
히데나리 요시다
토모시 타니야마
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가부시키가이샤 히다치 고쿠사이 덴키
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Publication of KR20140020782A publication Critical patent/KR20140020782A/ko
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020130094066A 2012-08-10 2013-08-08 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치 Abandoned KR20140020782A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012178640A JP6061545B2 (ja) 2012-08-10 2012-08-10 半導体装置の製造方法、基板処理方法および基板処理装置
JPJP-P-2012-178640 2012-08-10

Related Child Applications (1)

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KR1020150099498A Division KR101614275B1 (ko) 2012-08-10 2015-07-14 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치

Publications (1)

Publication Number Publication Date
KR20140020782A true KR20140020782A (ko) 2014-02-19

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KR1020130094066A Abandoned KR20140020782A (ko) 2012-08-10 2013-08-08 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치
KR1020150099498A Active KR101614275B1 (ko) 2012-08-10 2015-07-14 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치

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Country Status (4)

Country Link
US (1) US8791031B2 (enExample)
JP (1) JP6061545B2 (enExample)
KR (2) KR20140020782A (enExample)
TW (1) TWI547993B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190005246A (ko) * 2019-01-07 2019-01-15 무진전자 주식회사 웨이퍼 처리 장치
KR20220029394A (ko) * 2020-08-28 2022-03-08 도쿄엘렉트론가부시키가이샤 클리닝 방법 및 처리 장치

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KR101427726B1 (ko) * 2011-12-27 2014-08-07 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 장치의 제조 방법
US10100407B2 (en) * 2014-12-19 2018-10-16 Lam Research Corporation Hardware and process for film uniformity improvement
KR102487805B1 (ko) * 2015-04-28 2023-01-12 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
JP6606551B2 (ja) * 2015-08-04 2019-11-13 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法および記録媒体
US11332824B2 (en) 2016-09-13 2022-05-17 Lam Research Corporation Systems and methods for reducing effluent build-up in a pumping exhaust system
US10115607B2 (en) * 2016-09-16 2018-10-30 Applied Materials, Inc. Method and apparatus for wafer outgassing control
JP6763274B2 (ja) * 2016-10-14 2020-09-30 東京エレクトロン株式会社 成膜装置、成膜装置のクリーニング方法及び記憶媒体
JP6864705B2 (ja) * 2018-03-29 2021-04-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、制御システム及び半導体装置の製造方法
JP6681452B1 (ja) * 2018-10-19 2020-04-15 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置及び半導体装置の製造方法
KR102208815B1 (ko) * 2019-05-10 2021-01-28 주식회사 뉴파워 프라즈마 기판 처리 시스템의 제어 방법
TWI866102B (zh) * 2019-05-28 2024-12-11 日商國際電氣股份有限公司 半導體裝置的製造方法，基板處理裝置及程式
JP7420777B2 (ja) * 2021-09-21 2024-01-23 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置及びプログラム
CN114005767B (zh) * 2021-10-29 2025-10-10 北京北方华创微电子装备有限公司 半导体热处理设备及其排气装置
CN115440633B (zh) * 2022-10-17 2023-07-11 北京北方华创微电子装备有限公司 半导体工艺设备和排气调节机构
US20250122621A1 (en) * 2023-10-13 2025-04-17 Applied Materials, Inc. Process chamber gas flow improvement

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US6142163A (en) * 1996-03-29 2000-11-07 Lam Research Corporation Method and apparatus for pressure control in vacuum processors
JP2003209063A (ja) * 2001-11-08 2003-07-25 Tokyo Electron Ltd 熱処理装置および熱処理方法
US7795157B2 (en) * 2006-08-04 2010-09-14 Hitachi Kokusai Electric, Inc. Substrate treatment device and manufacturing method of semiconductor device
JP2008235611A (ja) * 2007-03-21 2008-10-02 Tohoku Univ プラズマ処理装置及びプラズマ処理方法
JP5060916B2 (ja) * 2007-11-05 2012-10-31 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法及び基板処理方法
JP2009218262A (ja) * 2008-03-07 2009-09-24 Omron Corp プラズマ反応炉を用いた電子装置の製造方法
JP2010073823A (ja) * 2008-09-17 2010-04-02 Tokyo Electron Ltd 成膜装置、成膜方法、及びコンピュータ可読記憶媒体
JP2011044446A (ja) * 2009-08-19 2011-03-03 Tokyo Electron Ltd 圧力制御機器、圧力制御方法および基板処理装置
JP2011134781A (ja) * 2009-12-22 2011-07-07 Hitachi Kokusai Electric Inc 半導体装置の製造方法および基板処理装置
JP5470149B2 (ja) * 2010-04-23 2014-04-16 株式会社日立国際電気 基板処理装置、半導体装置の製造方法およびクリーニング方法
TWI562204B (en) * 2010-10-26 2016-12-11 Hitachi Int Electric Inc Substrate processing apparatus, semiconductor device manufacturing method and computer-readable recording medium
JP5921168B2 (ja) * 2011-11-29 2016-05-24 株式会社日立国際電気 基板処理装置
JP5960614B2 (ja) * 2012-03-29 2016-08-02 Ckd株式会社 流体制御システム、流体制御方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190005246A (ko) * 2019-01-07 2019-01-15 무진전자 주식회사 웨이퍼 처리 장치
KR20220029394A (ko) * 2020-08-28 2022-03-08 도쿄엘렉트론가부시키가이샤 클리닝 방법 및 처리 장치

Also Published As

Publication number Publication date
JP6061545B2 (ja) 2017-01-18
US8791031B2 (en) 2014-07-29
US20140045278A1 (en) 2014-02-13
KR20150088229A (ko) 2015-07-31
TWI547993B (zh) 2016-09-01
TW201421573A (zh) 2014-06-01
KR101614275B1 (ko) 2016-04-21
JP2014036216A (ja) 2014-02-24

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Patent event code: PA01071R01D

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