JP6051524B2 - 半導体基板及び半導体基板の製造方法 - Google Patents

半導体基板及び半導体基板の製造方法 Download PDF

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JP6051524B2
JP6051524B2 JP2012008102A JP2012008102A JP6051524B2 JP 6051524 B2 JP6051524 B2 JP 6051524B2 JP 2012008102 A JP2012008102 A JP 2012008102A JP 2012008102 A JP2012008102 A JP 2012008102A JP 6051524 B2 JP6051524 B2 JP 6051524B2
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single crystal
film
silicon substrate
silicon carbide
stress relaxation
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JP2013149733A5 (https=
JP2013149733A (ja
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幸宗 渡邉
幸宗 渡邉
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Seiko Epson Corp
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Seiko Epson Corp
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Priority to JP2012008102A priority Critical patent/JP6051524B2/ja
Priority to US13/735,444 priority patent/US8847236B2/en
Priority to CN201310013795.5A priority patent/CN103219361B/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/276—Lateral overgrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/276—Lateral overgrowth
    • H10P14/278—Pendeoepitaxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3208—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement

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  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2012008102A 2012-01-18 2012-01-18 半導体基板及び半導体基板の製造方法 Active JP6051524B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012008102A JP6051524B2 (ja) 2012-01-18 2012-01-18 半導体基板及び半導体基板の製造方法
US13/735,444 US8847236B2 (en) 2012-01-18 2013-01-07 Semiconductor substrate and semiconductor substrate manufacturing method
CN201310013795.5A CN103219361B (zh) 2012-01-18 2013-01-15 半导体基板及半导体基板的制造方法

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JP2012008102A JP6051524B2 (ja) 2012-01-18 2012-01-18 半導体基板及び半導体基板の製造方法

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JP2013149733A JP2013149733A (ja) 2013-08-01
JP2013149733A5 JP2013149733A5 (https=) 2015-03-05
JP6051524B2 true JP6051524B2 (ja) 2016-12-27

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US (1) US8847236B2 (https=)
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CN (1) CN103219361B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150072066A (ko) * 2013-12-19 2015-06-29 서울바이오시스 주식회사 반도체 성장용 템플릿, 성장 기판 분리 방법 및 이를 이용한 발광소자 제조 방법
JP2015192006A (ja) 2014-03-28 2015-11-02 セイコーエプソン株式会社 半導体ウェハー、受光センサー製造方法及び受光センサー
US9536954B2 (en) 2014-10-31 2017-01-03 Seiko Epson Corporation Substrate with silicon carbide film, semiconductor device, and method for producing substrate with silicon carbide film
US9362368B2 (en) 2014-10-31 2016-06-07 Seiko Epson Corporation Substrate with silicon carbide film, method for producing substrate with silicon carbide film, and semiconductor device
JP6592961B2 (ja) * 2015-05-19 2019-10-23 セイコーエプソン株式会社 炭化ケイ素基板および炭化ケイ素基板の製造方法
CN106504975B (zh) * 2015-09-06 2019-12-27 中芯国际集成电路制造（天津）有限公司 提高关键尺寸精确性的方法
CN108987250B (zh) * 2017-06-02 2021-08-17 上海新昇半导体科技有限公司 衬底及其制作方法
KR102463483B1 (ko) * 2017-08-29 2022-11-04 마이크론 테크놀로지, 인크 고 밴드 갭 재료를 포함하는 스트링 드라이버들을 갖는 디바이스들 및 시스템들, 및 형성 방법들
CN107946215A (zh) * 2017-11-23 2018-04-20 长江存储科技有限责任公司 晶圆翘曲状态调整方法
JP7129888B2 (ja) * 2018-11-07 2022-09-02 東京エレクトロン株式会社 成膜方法及び半導体製造装置
CN112908839B (zh) * 2019-12-03 2021-10-01 上海积塔半导体有限公司 减少碳化硅晶圆弯曲度的方法
WO2021217301A1 (zh) * 2020-04-26 2021-11-04 苏州晶湛半导体有限公司 半导体结构的制作方法及半导体结构

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JPS6126227A (ja) * 1984-07-16 1986-02-05 Matsushita Electric Ind Co Ltd 半導体装置
JPS61225816A (ja) * 1985-03-29 1986-10-07 Sharp Corp 化合物半導体装置の製造方法
JPS6313324A (ja) * 1986-07-03 1988-01-20 Rohm Co Ltd 基板の製造方法
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US5562770A (en) * 1994-11-22 1996-10-08 International Business Machines Corporation Semiconductor manufacturing process for low dislocation defects
JP3880717B2 (ja) * 1997-12-19 2007-02-14 Ｈｏｙａ株式会社 炭化珪素の製造方法
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JP3589200B2 (ja) * 2000-06-19 2004-11-17 日亜化学工業株式会社 窒化物半導体基板及びその製造方法、並びにその窒化物半導体基板を用いた窒化物半導体素子
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CN103219361A (zh) 2013-07-24
US20130181230A1 (en) 2013-07-18
US8847236B2 (en) 2014-09-30
CN103219361B (zh) 2017-05-10
JP2013149733A (ja) 2013-08-01

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