JP4331773B2 - 半導体装置及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 66
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 84
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 68
- 230000007547 defect Effects 0.000 claims description 65
- 239000013078 crystal Substances 0.000 claims description 59
- 238000000034 method Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 19
- 239000002019 doping agent Substances 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000002513 implantation Methods 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 230000004913 activation Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000005092 sublimation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
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- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
MOSFET)形成領域に近接する位置に溝が形成された炭化珪素(SiC)基板上にエピタキシャル成長されたSiC膜を備えるDiMOS製造方法の一部について説明する。
101,201 SiC基板
102,202 SiC層(エピタキシャル成長膜)
103,203 結晶欠陥集約領域
107,207,307 溝
Claims (20)
- 炭化珪素(SiC)膜を有する半導体基板を用いて製造される半導体装置の製造方法において、
半導体ウエハ上に炭化珪素膜を形成する工程と;
前記半導体ウエハの変形状態を確認する工程と;
前記半導体ウエハの変形状態に応じて定められる形状の溝を前記炭化珪素膜に形成する工程とを含むことを特徴とする半導体装置の製造方法。 - 前記半導体ウエハに一方向に延びる隆起状の反りがある場合には、前記溝は、前記反りの延びる長手方向と略垂直に延びるスリット状の複数の溝とすることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記半導体ウエハの中央付近に凹状又は凸状の反りがある場合には、前記溝は、第一の方向に延びる第一の溝と、前記第一の方向と直交する第二の方向に延びる第二の溝とからなることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記溝は、前記炭化珪素膜の結晶欠陥が集約された領域の周囲に形成されることを特徴とする請求項1,2又は3に記載の半導体装置の製造方法。
- 前記溝は、前記炭化珪素膜中の結晶欠陥が集約された領域を除去するように形成されることを特徴とする請求項1,2又は3に記載の半導体装置の製造方法。
- 前記結晶欠陥が集約された領域は、104個/cm2以上の欠陥を有する領域であることを特徴とする請求項4又は5に記載の半導体装置の製造方法。
- 前記結晶欠陥が集約された領域は、所定の方法により意図的に形成されることを特徴とする請求項4,5又は6に記載の半導体装置の製造方法。
- 前記結晶欠陥は、少なくとも、マイクロパイプ、螺旋転位、刃状転位のうちの1種類を含むことを特徴とする請求項4,5,6又は7に記載の半導体装置の製造方法。
- 表面に炭化珪素(SiC)膜を有する半導体ウエハを用いて製造される半導体装置において、
前記炭化珪素膜には溝が形成され、
前記溝は、前記ウエハ上における一方向に延びる隆起状の反りの長手方向と略垂直に延びるスリット状の複数の溝であることを特徴とする半導体装置。 - 前記溝は、前記炭化珪素膜の結晶欠陥が集約された領域の周囲に形成されていることを特徴とする請求項9に記載の半導体装置。
- 前記結晶欠陥が集約された領域は、104個/cm2以上の欠陥を有する領域であることを特徴とする請求項10に記載の半導体装置。
- 前記結晶欠陥が集約された領域は、所定の方法により意図的に形成された領域であることを特徴とする請求項10又は11に記載の半導体装置。
- 前記結晶欠陥は、少なくとも、マイクロパイプ、螺旋転位、刃状転位のうちの1種類を含むことを特徴とする請求項10,11又は12に記載の半導体装置。
- 前記溝は、前記炭化珪素膜中の結晶欠陥が集約された領域を除去するように形成されていることを特徴とする請求項10,11,12又は13に記載の半導体装置。
- 表面に炭化珪素(SiC)膜を有する半導体ウエハを用いて製造される半導体装置において、
前記炭化珪素膜の結晶欠陥が集約された領域の周囲に溝が形成され、
前記溝は、第一の方向に延びる第一の溝と、前記第一の方向と直交する第二の方向に延びる第二の溝であることを特徴とする半導体装置。 - 前記第一の溝と前記第二の溝とは交互に配置されることを特徴とする請求項15に記載の半導体装置。
- 前記結晶欠陥が集約された領域は、104個/cm2以上の欠陥を有する領域であることを特徴とする請求項15又は16に記載の半導体装置。
- 前記結晶欠陥が集約された領域は、所定の方法により意図的に形成された領域であることを特徴とする請求項15、16又は17に記載の半導体装置。
- 前記結晶欠陥は、少なくとも、マイクロパイプ、螺旋転位、刃状転位のうちの1種類を含むことを特徴とする請求項15,16,17又は18に記載の半導体装置。
- 前記溝は、前記炭化珪素膜中の結晶欠陥が集約された領域を除去するように形成されることを特徴とする請求項15,16,17,18又は19に記載の半導体装置。
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JP2007071926A JP4331773B2 (ja) | 2007-03-20 | 2007-03-20 | 半導体装置及びその製造方法 |
US12/073,492 US7718515B2 (en) | 2007-03-20 | 2008-03-06 | Method for fabricating semiconductor device |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5240658B2 (ja) * | 2008-10-31 | 2013-07-17 | 信越半導体株式会社 | 化合物半導体エピタキシャルウェーハの製造方法、化合物半導体エピタキシャルウェーハ及び発光素子 |
JP2011060901A (ja) * | 2009-09-08 | 2011-03-24 | Sumitomo Electric Ind Ltd | 半導体装置および半導体装置の製造方法 |
TWI562195B (en) | 2010-04-27 | 2016-12-11 | Pilegrowth Tech S R L | Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication |
CN103109350A (zh) * | 2010-09-30 | 2013-05-15 | 飞思卡尔半导体公司 | 处理半导体晶片的方法、半导体晶片以及半导体器件 |
TW201430957A (zh) * | 2013-01-25 | 2014-08-01 | Anpec Electronics Corp | 半導體功率元件的製作方法 |
JP6197461B2 (ja) * | 2013-08-06 | 2017-09-20 | 住友電気工業株式会社 | 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 |
CN109205549A (zh) * | 2017-07-03 | 2019-01-15 | 无锡华润上华科技有限公司 | 双空腔结构的制备方法 |
CN109238518B (zh) * | 2018-09-17 | 2021-11-05 | 胡耿 | 微小极间距电容式力敏传感器及其制造方法 |
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JPH10125905A (ja) | 1996-10-17 | 1998-05-15 | Denso Corp | 半導体基板および半導体基板のそり矯正方法 |
JP4459723B2 (ja) | 2004-06-08 | 2010-04-28 | 株式会社デンソー | 炭化珪素単結晶、炭化珪素基板およびその製造方法 |
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