JP6051302B2 - 半導体ウエハ保護用フィルム及び半導体装置の製造方法 - Google Patents
半導体ウエハ保護用フィルム及び半導体装置の製造方法 Download PDFInfo
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- JP6051302B2 JP6051302B2 JP2015519819A JP2015519819A JP6051302B2 JP 6051302 B2 JP6051302 B2 JP 6051302B2 JP 2015519819 A JP2015519819 A JP 2015519819A JP 2015519819 A JP2015519819 A JP 2015519819A JP 6051302 B2 JP6051302 B2 JP 6051302B2
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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Description
基材層(A)と、
前記基材層(A)上に形成された粘着層(C)と、を有し、
前記基材層(A)がポリマーを含み、前記ポリマーのvan Krevelen法により求めた溶解パラメーターが9以上である、半導体ウエハ保護用フィルムを提供する。
半導体ウエハに、上記の半導体ウエハ保護用フィルムの粘着層(C)を介して貼り付ける第一工程、と
前記半導体ウエハを前記半導体ウエハ保護用フィルムとともに溶剤で洗浄する第二工程、と
を含む、半導体装置の製造方法を提供する。
図1に示すように、半導体ウエハ保護用フィルム10は、基材層1、吸収層2、粘着層3がこの順で積層している。
基材層1としては、合成樹脂をフィルム状に成形加工したものを用いる。基材層1は単層体であっても、又、二層以上の積層体であってもよい。又、基材層1は熱可塑性樹脂を成形加工したものであっても、熱硬化性樹脂を製膜後、硬化したものであってもよい。
また、基材層1の、25℃、周波数1Hzにおける引張弾性率Eaが0.1GPa以上であることが好ましい。引張弾性率Eaを一定以上にすることで、基材層1の変形をさらに抑制することができる。これらパラメーターを組み合わせることにより、耐溶剤性をより一層良好にできる。
従来知られている、ダイシング工程などに用いることができる拡張性を有する半導体ウエハ保護用フィルムには、本発明のように耐溶剤性が必要となる工程にも用いるという思想がなく、そのため、基材層には耐溶剤性が低いもの、具体的にはSP値が9未満のエチレン−酢酸ビニル共重合体(以下、EVAともいう)、ポリエチレンなどが用いられている。これに対し、本発明の半導体ウエハ保護用フィルム10は、基材層1に含まれるポリマーのSP値を9以上とすることにより、溶剤の進入を抑制し、耐溶剤性を良好にできるものである。
拡張性付与成分としては、例えば、イソフタル酸、フタル酸、2,6−ナフタレンジカルボン酸、5−ナトリウムスルホイソフタル酸、シュウ酸、コハク酸、アジピン酸、セバシン酸、アゼライン酸、ドデカン二酸、ダイマー酸、無水マレイン酸、マレイン酸、フマル酸、イタコン酸、シトラコン酸、メサコン酸、シクロヘキサンジカルボン酸等のジカルボン酸、4−ヒドロキシ安息香酸、ε−カプロラクトンや乳酸などのオキシカルボン酸があげられる。また、グリコールを含むことが好ましく、例えば、1,3−プロパンジオール、1,4−ブタンジオール、ネオペンチルグリコール、1,6−ヘキサンジオール、シクロヘキサンジメタノール、トリエチレングリコールポリエチレングリコール、ポリプロピレングリコール、ポリテトラメチレングリコール、ビスフェノールAやビスフェノールSのエチレンオキシド付加体等のグリコール等が挙げられ、ポリマーとの相溶性の観点から、ポリテトラメチレングリコールがより好ましい。これらは、1種または2種以上を混合して用いてもよい。
粘着層3は、半導体ウエハの表面に直接する面である。これにより、半導体ウエハ保護用フィルム10が半導体ウエハに密着し、半導体ウエハ表面を保護できる。
また、粘着層3は、ゲル分率30重量%以上90重量%以下のアクリル系ポリマーを用いることがさらに好ましい。
{(W1/W2)/W1}×100% (1)
吸収層2は、半導体ウエハ表面の凹凸吸収性を有する層である。後述するように、吸収層2は、例えば、基材層1と粘着層3との間に設けられてもよく、また粘着層3の機能を兼ね備える層としてもよい。吸収層2は、一層でもよく、2層以上が積層したものでもよい。また基材層1と吸収層2の間や吸収層2と粘着層3の間に、他の層を設けてもよい。凹凸吸収性の観点から吸収層2と粘着層3の間に設けられうる層は、柔軟性が高い材料からなる層や厚さが薄い層であることが好ましく、吸収層2と粘着層3は少なくとも一部が接しているのがより好ましい。さらに、基材層1と吸収層2の間や吸収層2と粘着層3の間に設けられうる他の層についても、耐溶剤性という観点から、基材層1と同様にSP値が9以上であることが好ましい。
なお、半導体ウエハ表面の凹凸とは、半導体ウエハの表面に、高さが10〜200μmであるバンプ電極、不良回路識別マーク等の突起状物がピッチ50〜1000μmで形成されたものをいう。言い換えると、表面な平滑な半導体ウエハとは、これらバンプ電極、突起状物が形成されていないものをいう。また、半導体ウエハ表面の段差とは、半導体ウエハのこれらバンプ電極、突起状物が形成されていない領域の表面から、これらバンプ電極、突起状物が形成されている領域の高さの最大値をいう。
また、吸収層2は、ゲル分率30重量%以上90重量%以下のアクリル系ポリマーを用いることがさらに好ましい。
なお、吸収層2のゲル分率は、粘着層3と同様にして調整できる。
tx≧ha (2)
次に、粘着層3の貯蔵弾性率Gc、及び吸収層2の貯蔵弾性率Gbの制御方法について説明する。貯蔵弾性率は、(イ)ポリマーを構成する主モノマーの種類及び使用量、(ロ)架橋剤と反応し得る官能基を有するコモノマーの種類及び使用量(共重合量)、(ハ)ポリマーの重合方法、(ニ)架橋剤の添加量、などの因子によって左右される。これらの因子が貯蔵弾性率に及ぼす影響について説明する。
半導体ウエハ保護用フィルム10の製造方法は、特に限定されないが、例えば、以下のようにして製造できる。
本実施形態の半導体装置の製造方法は、以下の工程を含む。
図2(a)に示すように、半導体ウエハ101を用意し、図2(b)に示すように、半導体ウエハ101の主面とは反対側に、接着層103付き支持基板102を貼り付ける。
得られた半導体チップ111を用いて、半導体装置を製造する。
・弾性率
(1)引張弾性率Ea(GPa)
基材フィルムを25mm×150mmに切り出し、TA−インスツルメンツ製 RSA3を用いて、周波数1Hzにて、25〜100℃の温度範囲で引張弾性率を測定した。
(2)貯蔵弾性率Gb、Gc(MPa)
実施例、比較例の各粘着層又は吸収層を作製するときと同等の塗工条件(厚み、乾燥温度、乾燥時間等)で、片表面にシリコーン処理が施されたPETフィルム(剥離フィルム)の離型処理面側に、塗布液を塗布、乾燥し、PETフィルムの離型処理面上に粘着層又は吸収層を形成する。粘着層又は吸収層を形成した後、実施例、比較例に記載の各粘着層、吸収層と同等の熱履歴を与えるため、粘着層又は吸収層を単層のまま、60℃において48時間加熱する。得られた層を順次重ね合わせ、厚み約1mmの粘着層又は吸収層のフィルム状シートを作成する。このフィルム状シートから、直径約8mm、厚み約1mm程度の円盤型形状の試料を採取する。この試料を、動的粘弾性測定装置[レオメトリックス社製、形式;RMS−800、直径8mmのパラレルプレート(平行円盤)型アタッチメントを使用]を用いて、周波数1Hzにて、25〜100℃の温度範囲で貯蔵弾性率を測定する。具体的には、サンプルを25℃にて上記パラレルプレート型アタッチメントを介して動的粘弾性測定装置にセットし、25℃から100℃まで、3℃/分の昇温速度で昇温しながら貯蔵弾性率を測定する。測定終了後、得られた25℃〜100℃における貯蔵弾性率−温度曲線の中から、必要に応じて、50〜100℃における貯蔵弾性率(G'、MPa)の最小値(G'min、MPa)、もしくは60℃における貯蔵弾性率(G'、MPa)、25℃における貯蔵弾性率(G'25℃、MPa)を採用する。
ゲル分率は、重量が約1g(W1)の粘着層または吸収層をトルエンと酢酸エチルの混合溶剤(1:1)100g中に温度25℃で168時間浸漬させた後、ろ過を行い、ろ物を乾燥した後の重量(W2)を求め、下記数式(1)により求めた。
{(W1/W2)/W1}×100(%) (1)
・耐溶剤性1(ウエハ貼り付け面に凹凸なし)
まず、表面が鏡面状の8インチウエハとリングフレームを用意した。次に、ウエハとリングフレームの裏面に、作成したフィルムを貼り付け、ウエハとリングフレームの表面から、溶剤をフィルム全体に行き渡るように滴下した。滴下後、30分後に溶剤を除去し、溶剤滴下前後のフィルムの外観上の変化、およびウエハ及びフィルム間への溶剤のしみこみを確認した。
○:フィルムの外観が変化せず、溶剤のしみ込みがなかった
×:フィルムの外観が大きく変化し、溶剤のしみ込みがあった
まず、80μmの高さ、200μmピッチの半田バンプが表面に配置された8インチウエハとリングフレームを用意した。次に、ウエハとリングフレームの裏面に、作成したフィルムを貼り付け、ウエハとリングフレームの表面から、溶剤をフィルム全体に行き渡るように滴下した。滴下後、30分後に溶剤を除去し、溶剤滴下前後のフィルムの外観上の変化、およびウエハ及びフィルム間への溶剤のしみこみを確認した。
○:フィルムの外観が変化せず、溶剤のしみ込みがなかった
×:フィルムの外観が大きく変化し、溶剤のしみ込みがあった
図4(a)に示すように、6インチ用SUSリングフレーム44に、作成したフィルム40の粘着層側をゴムロールで密着させた。
フィルム40の表面に、図4(a)に示すようなマークa、b、A、B、a'、b'、A'、B'を記入した。拡張前の長さは、それぞれ、a−a'60mm、b−b'60mm、A−A'120mm、B−B'120mmである。
次いで、図4(b)に示されるように、フィルム40の基材層表面が拡張機のステージ43に接触するように、リングフレーム44を拡張機に固定した。そして、図5に示されるように、引き上げ速度5mm/min、引き上げ量を10mmとして、拡張機のステージ43を上昇させて、フィルム40を拡張し、a−a'、b−b'、A−A'、B−B'の長さをそれぞれ測定した。
拡張機は、ヒューグルエレクトロニクス社製 HS−1800を用いた。
a−a'、b−b'、A−A'、B−B'の拡張前の長さに対する拡張後の長さの割合を拡張率(%)とした。
○:1%以上
×:1%未満もしくはリングフレームからのテープ外れが発生
(吸収層・粘着剤主剤の作成)
アクリル酸エチル30重量部、アクリル酸2−エチルヘキシル40重量部、アクリル酸メチル10重量部、メタクリル酸グリシジル20重量部のモノマー混合物を、ベンゾイルパーオキサイド系重合開始剤〔日本油脂株式会社製、ナイパーBMT−K40〕0.8重量部(開始剤として0.32重量部)を用いて、トルエン65重量部、酢酸エチル50重量部中で80℃、10時間反応させた。反応終了後、冷却し、これにキシレン100重量部、アクリル酸10重量部とテトラデシルジメチルベンジルアンモニウムクロライド〔日本油脂株式会社製、カチオンM2−100〕0.3重量部加え、空気を吹き込みながら85℃で50時間反応させ、アクリル系粘着剤ポリマーの溶液(吸収層・粘着剤主剤)を得た。
(吸収層用の塗布液の調製)
得られた吸収層・粘着剤主剤に熱架橋剤としてイソシアナート系架橋剤〔三井東圧化学株式会社製、オレスターP49−75−S〕を0.02重量部添加し、吸収層用の塗布液を得た。
(粘着剤用の塗布液の調製)
得られた粘着剤主剤にアクリル系粘着剤ポリマー固形分100重量部に対して、分子内結合開裂型光重合開始剤としてベンジルジメチルケタール〔日本チバガイギー株式会社、イルガキュアー651〕を2重量部、分子内に重合性炭素−炭素二重結合を有するモノマーとしてジペンタエリスリトールヘキサアクリレートとジペンタエリスリトールモノヒドロキシペンタアクリレートの混合物〔東亜合成化学工業株式会社製、アロニックスM−400〕を0.3重量部添加し、さらに、熱架橋剤としてイソシアナート系架橋剤〔三井東圧化学株式会社製、オレスターP49−75−S〕を1.35重量部(熱架橋剤として1重量部)添加し、粘着剤用の塗布液を得た。
(吸収層付基材フィルムの作製)
上記吸収層用の塗布液をリップコーターを用いてシリコーン離型処理を施したポリエチレンテレフタレートフィルム(剥離フィルム、厚み:40μm)の離型処理面に塗布し、120℃で2分間乾燥して、厚さ100μmの吸収層を設けた。その後、基材フィルムとして準備した表1に示すポリエチレンテレフタレートフィルムのコロナ処理面を貼り合わせ押圧して、吸収層を転写させ、吸収層付基材フィルムを作製した。
(半導体ウエハ保護用フィルムの作製)
上記で得られた粘着層用の塗布液を同様にリップコーターを用いてシリコーン離型処理を施したポリエチレンテレフタレートフィルム(剥離フィルム、厚み:40μm)の離型処理面に塗布し、120℃で2分間乾燥し厚さ10μmの粘着層を設けた。その後、粘着層と、上記で得られた吸収層付基材フィルムの吸収層側とを貼りあわせ、60℃において24時間加熱した後、室温まで冷却することにより半導体ウエハ保護用粘着フィルムを作製した。
基材フィルムを以下のようにして作製した以外は、実施例1と同様にして、半導体ウエハ保護用フィルムを作製した。
(基材フィルムの作製)
ポリテトラメチレングリコールを20%含有したポリブチレンテレフタレートをT−ダイ押出機を用いて、厚さ50μmのポリブチレンテレフタレートフィルムを形成した。この際、吸収層を貼り合わせる側の面にコロナ処理を施した。得られたポリブチレンテレフタレートフィルムの厚みバラツキは±1.5%以内であった。
実施例1で得た粘着剤用の塗布液をリップコーターを用いてシリコーン離型処理を施したポリエチレンテレフタレートフィルム(剥離フィルム、厚み:40μm)の離型処理面に塗布し、120℃で2分間乾燥して、厚さ10μmの粘着層を設けた。その後、基材フィルムとして準備した表1に示すポリエチレンテレフタレートフィルムのコロナ処理面を貼り合わせ押圧して、半導体ウエハ保護用フィルムを作製した。
実施例1で得た粘着剤用の塗布液をリップコーターを用いてシリコーン離型処理を施したポリエチレンテレフタレートフィルム(剥離フィルム、厚み:40μm)の離型処理面に塗布し、120℃で2分間乾燥して、厚さ10μmの粘着層を設けた。その後、実施例2で作製した基材フィルムのコロナ処理面を貼り合わせ押圧して、半導体ウエハ保護用フィルムを作製した。
上記実施例1で用いた基材フィルムとして、表1に記載された基材フィルムを用いた以外は、実施例1と同様にして、半導体ウエハ保護用フィルムを作製した。
上記実施例3で用いた基材フィルムとして、表1に記載された基材フィルムを用いた以外は、実施例3と同様にして、半導体ウエハ保護用フィルムを作製した。
Claims (13)
- 基材層(A)と、
前記基材層(A)上に形成された粘着層(C)と、を有し、
前記基材層(A)がポリマーを含み、前記ポリマーのvan Krevelen法により求めた溶解パラメーターが9以上である、半導体ウエハ保護用フィルム。 - 前記ポリマーが共重合体成分として拡張性付与成分を含み、前記拡張性付与成分単体の融点が40℃以下である、請求項1に記載の半導体ウエハ保護用フィルム。
- 前記拡張性付与成分が、グリコールを含む、請求項1または2に記載の半導体ウエハ保護用フィルム。
- 前記基材層(A)と前記粘着層(C)との間にさらに吸収層(B)を有し、
前記吸収層(B)がアクリル系ポリマーを含み、ゲル分率が30〜90重量%である、請求項1乃至3いずれか一項に記載の半導体ウエハ保護用フィルム。 - 前記吸収層(B)の25℃、周波数1Hzにおける貯蔵弾性率Gbが0.01MPa以上1MPa以下である、請求項4に記載の半導体ウエハ保護用フィルム。
- 前記基材層(A)と前記吸収層(B)との少なくとも一部が接している、請求項4または5に記載の半導体ウエハ保護用フィルム。
- 前記粘着層(C)がアクリル系ポリマーを含み、ゲル分率が30〜90重量%である、請求項1乃至6のいずれか一項に記載の半導体ウエハ保護用フィルム。
- 前記粘着層(C)の25℃、周波数1Hzにおける貯蔵弾性率Gcが0.01MPa以上10MPa以下である、請求項1乃至7いずれか一項に記載の半導体ウエハ保護用フィルム。
- 前記基材層(A)が、前記溶解パラメーターが9以上のポリマーのみで構成されている、請求項1乃至8のいずれか一項に記載の半導体ウエハ保護用フィルム。
- 半導体ウエハに、請求項1乃至9のいずれか一項に記載の半導体ウエハ保護用フィルムの粘着層(C)を介して貼り付ける第一工程、と
前記半導体ウエハを前記半導体ウエハ保護用フィルムとともに溶剤で洗浄する第二工程、と
を含む、半導体装置の製造方法。 - 前記半導体ウエハ保護用フィルムが貼り付けられる側の前記半導体ウエハの表面に、5μm〜200μmの段差が設けられている、請求項10に記載の半導体装置の製造方法。
- 第二工程の後に、
前記半導体ウエハを前記半導体ウエハ保護用フィルムとともにダイシングして、半導体チップを得る第三工程、と
前記半導体ウエハ保護用フィルムを水平方向に拡張し、前記半導体ウエハ保護用フィルムから前記半導体チップをピックアップする第四工程、と
をさらに含む、請求項10または11に記載の半導体装置の製造方法。 - 前記第一工程において、
前記半導体ウエハ保護用シートを前記半導体ウエハの表面に、温度20〜80℃、圧力0.3〜0.5MPaで貼り付ける、請求項10乃至12いずれか一項に記載の半導体装置の製造方法。
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