JP6050975B2 - リードフレーム、半導体装置及びリードフレームの製造方法 - Google Patents

リードフレーム、半導体装置及びリードフレームの製造方法 Download PDF

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Publication number
JP6050975B2
JP6050975B2 JP2012150495A JP2012150495A JP6050975B2 JP 6050975 B2 JP6050975 B2 JP 6050975B2 JP 2012150495 A JP2012150495 A JP 2012150495A JP 2012150495 A JP2012150495 A JP 2012150495A JP 6050975 B2 JP6050975 B2 JP 6050975B2
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Prior art keywords
layer
wiring
lead frame
resin layer
opening
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Active
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JP2012150495A
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English (en)
Japanese (ja)
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JP2013229542A (ja
JP2013229542A5 (https=
Inventor
小林 敏男
敏男 小林
清水 浩
浩 清水
敏幸 岡部
敏幸 岡部
木村 康之
康之 木村
小林 和貴
和貴 小林
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to JP2012150495A priority Critical patent/JP6050975B2/ja
Priority to US13/848,225 priority patent/US8928130B2/en
Priority to EP13160808.5A priority patent/EP2645415B1/en
Priority to CN201310100730.4A priority patent/CN103367300B/zh
Publication of JP2013229542A publication Critical patent/JP2013229542A/ja
Publication of JP2013229542A5 publication Critical patent/JP2013229542A5/ja
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/456Materials
    • H10W70/458Materials of insulating layers on leadframes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/10Arrangements for heating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/04Manufacture or treatment of leadframes
    • H10W70/042Etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/461Leadframes specially adapted for cooling
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/479Leadframes on or in insulating or insulated package substrates, interposers, or redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0364Manufacture or treatment of packages of interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/858Means for heat extraction or cooling
    • H10H20/8583Means for heat extraction or cooling not being in contact with the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/421Shapes or dispositions
    • H10W70/424Cross-sectional shapes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • H10W72/252Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/547Dispositions of multiple bond wires
    • H10W72/5473Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/726Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
JP2012150495A 2012-03-27 2012-07-04 リードフレーム、半導体装置及びリードフレームの製造方法 Active JP6050975B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012150495A JP6050975B2 (ja) 2012-03-27 2012-07-04 リードフレーム、半導体装置及びリードフレームの製造方法
US13/848,225 US8928130B2 (en) 2012-03-27 2013-03-21 Lead frame including an insulating resin layer entirely covering lead surface, and semiconductor device including the same
EP13160808.5A EP2645415B1 (en) 2012-03-27 2013-03-25 Lead frame, semiconductor device, and method for manufacturing lead frame
CN201310100730.4A CN103367300B (zh) 2012-03-27 2013-03-26 引线框、半导体装置以及引线框的制造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012072110 2012-03-27
JP2012072110 2012-03-27
JP2012150495A JP6050975B2 (ja) 2012-03-27 2012-07-04 リードフレーム、半導体装置及びリードフレームの製造方法

Publications (3)

Publication Number Publication Date
JP2013229542A JP2013229542A (ja) 2013-11-07
JP2013229542A5 JP2013229542A5 (https=) 2015-08-20
JP6050975B2 true JP6050975B2 (ja) 2016-12-21

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Country Status (4)

Country Link
US (1) US8928130B2 (https=)
EP (1) EP2645415B1 (https=)
JP (1) JP6050975B2 (https=)
CN (1) CN103367300B (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6032086B2 (ja) * 2013-03-25 2016-11-24 豊田合成株式会社 発光装置
JP6418625B2 (ja) * 2013-12-13 2018-11-07 東芝メモリ株式会社 半導体装置の製造方法
CN103887185B (zh) * 2014-04-08 2017-01-18 安捷利(番禺)电子实业有限公司 一种用于芯片封装的引线框架的制备方法
JP6375753B2 (ja) * 2014-07-24 2018-08-22 大日本印刷株式会社 リードフレームの多面付け体、樹脂付きリードフレームの多面付け体、半導体装置の多面付け体
TWI610411B (zh) * 2014-08-14 2018-01-01 艾馬克科技公司 用於半導體晶粒互連的雷射輔助接合
KR20160028014A (ko) * 2014-09-02 2016-03-11 삼성전자주식회사 반도체 소자 패키지 제조방법
US9859481B2 (en) * 2014-12-22 2018-01-02 Nichia Corporation Light emitting device
US9590158B2 (en) 2014-12-22 2017-03-07 Nichia Corporation Light emitting device
JP2016207893A (ja) * 2015-04-24 2016-12-08 イビデン株式会社 プリント配線板およびその製造方法
JP6589577B2 (ja) * 2015-11-10 2019-10-16 凸版印刷株式会社 樹脂付リードフレーム基板の製造方法
CN109155349B (zh) * 2016-05-18 2021-09-07 亮锐控股有限公司 照明组件及用于制造照明组件的方法
TWI620279B (zh) * 2016-09-30 2018-04-01 Chang Wah Technology Co., Ltd. 分離式預成形封裝導線架及其製作方法
JP6777365B2 (ja) * 2016-12-09 2020-10-28 大口マテリアル株式会社 リードフレーム
US11081448B2 (en) * 2017-03-29 2021-08-03 Intel Corporation Embedded die microelectronic device with molded component
JP6924411B2 (ja) * 2017-08-28 2021-08-25 大日本印刷株式会社 リードフレームおよび半導体装置の製造方法
JP6637003B2 (ja) * 2017-09-08 2020-01-29 サンコール株式会社 バスバーアッセンブリ
JP2020025019A (ja) 2018-08-07 2020-02-13 キオクシア株式会社 半導体装置
TWI681572B (zh) * 2018-11-26 2020-01-01 諾沛半導體有限公司 高覆蓋率發光二極體載板
TWI672711B (zh) * 2019-01-10 2019-09-21 健策精密工業股份有限公司 絕緣金屬基板及其製造方法
DE102019106546A1 (de) 2019-03-14 2020-09-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung von optoelektronischen halbleiterbauteilen und optoelektronisches halbleiterbauteil
TWI692846B (zh) * 2019-03-21 2020-05-01 旭德科技股份有限公司 散熱基板及其製作方法
CN112250029B (zh) * 2020-11-10 2025-06-10 武汉飞恩微电子有限公司 压力传感器、基板结构及其制造方法
EP4057338A1 (en) * 2021-03-10 2022-09-14 Hitachi Energy Switzerland AG Metal substrate structure and method of manufacturing a metal substrate structure for a semiconductor power module and semiconductor power module
CN113193094B (zh) * 2021-04-27 2023-03-21 成都辰显光电有限公司 批量转移方法和显示面板
US20230038411A1 (en) * 2021-08-03 2023-02-09 Texas Instruments Incorporated Semiconductor package with raised dam on clip or leadframe
TWI758227B (zh) * 2021-09-06 2022-03-11 復盛精密工業股份有限公司 封裝導線架的製作方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3135823A (en) * 1960-06-28 1964-06-02 Pritikin Nathan Metallic element embedding process and product
JP2781020B2 (ja) * 1989-09-06 1998-07-30 モトローラ・インコーポレーテッド 半導体装置およびその製造方法
JPH09252014A (ja) * 1996-03-15 1997-09-22 Nissan Motor Co Ltd 半導体素子の製造方法
JP2001177022A (ja) * 1999-12-17 2001-06-29 Matsushita Electric Ind Co Ltd 熱伝導基板とその製造方法
US6909178B2 (en) * 2000-09-06 2005-06-21 Sanyo Electric Co., Ltd. Semiconductor device and method of manufacturing the same
US6870244B2 (en) * 2000-12-27 2005-03-22 Matsushita Electric Industrial Co., Ltd. Lead frame and production process thereof and production process of thermally conductive substrate
JP3833938B2 (ja) * 2000-12-27 2006-10-18 松下電器産業株式会社 リードフレームおよびその製造方法、ならびに熱伝導性基板の製造方法
JP2003309241A (ja) 2002-04-15 2003-10-31 Dainippon Printing Co Ltd リードフレーム部材とリードフレーム部材の製造方法、及び該リードフレーム部材を用いた半導体パッケージとその製造方法
JP2003309242A (ja) * 2002-04-15 2003-10-31 Dainippon Printing Co Ltd リードフレーム部材とリードフレーム部材の製造方法、及び該リードフレーム部材を用いた半導体パッケージとその製造方法
CN1549669A (zh) * 2003-05-09 2004-11-24 ������������ʽ���� 板状体的制造方法及采用该板状体的电路装置制造方法
JP4589170B2 (ja) * 2005-04-28 2010-12-01 新光電気工業株式会社 半導体装置及びその製造方法
KR101298225B1 (ko) * 2005-06-30 2013-08-27 페어차일드 세미컨덕터 코포레이션 반도체 다이 패키지 및 그의 제조 방법
JP2008098488A (ja) * 2006-10-13 2008-04-24 Matsushita Electric Ind Co Ltd 熱伝導基板とその製造方法
JP5526575B2 (ja) * 2009-03-30 2014-06-18 凸版印刷株式会社 半導体素子用基板の製造方法および半導体装置
US8501539B2 (en) * 2009-11-12 2013-08-06 Freescale Semiconductor, Inc. Semiconductor device package
JP2012033855A (ja) * 2010-07-01 2012-02-16 Hitachi Cable Ltd Ledモジュール、ledパッケージ、並びに配線基板およびその製造方法
JP2013153068A (ja) * 2012-01-25 2013-08-08 Shinko Electric Ind Co Ltd 配線基板、発光装置及び配線基板の製造方法

Also Published As

Publication number Publication date
JP2013229542A (ja) 2013-11-07
EP2645415B1 (en) 2019-04-24
CN103367300A (zh) 2013-10-23
CN103367300B (zh) 2017-06-23
EP2645415A2 (en) 2013-10-02
US20130256854A1 (en) 2013-10-03
EP2645415A3 (en) 2018-01-24
US8928130B2 (en) 2015-01-06

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