JP6050975B2 - リードフレーム、半導体装置及びリードフレームの製造方法 - Google Patents
リードフレーム、半導体装置及びリードフレームの製造方法 Download PDFInfo
- Publication number
- JP6050975B2 JP6050975B2 JP2012150495A JP2012150495A JP6050975B2 JP 6050975 B2 JP6050975 B2 JP 6050975B2 JP 2012150495 A JP2012150495 A JP 2012150495A JP 2012150495 A JP2012150495 A JP 2012150495A JP 6050975 B2 JP6050975 B2 JP 6050975B2
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- Prior art keywords
- layer
- wiring
- lead frame
- resin layer
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/456—Materials
- H10W70/458—Materials of insulating layers on leadframes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/10—Arrangements for heating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/04—Manufacture or treatment of leadframes
- H10W70/042—Etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/461—Leadframes specially adapted for cooling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/479—Leadframes on or in insulating or insulated package substrates, interposers, or redistribution layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0364—Manufacture or treatment of packages of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8583—Means for heat extraction or cooling not being in contact with the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/421—Shapes or dispositions
- H10W70/424—Cross-sectional shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/547—Dispositions of multiple bond wires
- H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
- H10W74/127—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/726—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012150495A JP6050975B2 (ja) | 2012-03-27 | 2012-07-04 | リードフレーム、半導体装置及びリードフレームの製造方法 |
| US13/848,225 US8928130B2 (en) | 2012-03-27 | 2013-03-21 | Lead frame including an insulating resin layer entirely covering lead surface, and semiconductor device including the same |
| EP13160808.5A EP2645415B1 (en) | 2012-03-27 | 2013-03-25 | Lead frame, semiconductor device, and method for manufacturing lead frame |
| CN201310100730.4A CN103367300B (zh) | 2012-03-27 | 2013-03-26 | 引线框、半导体装置以及引线框的制造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012072110 | 2012-03-27 | ||
| JP2012072110 | 2012-03-27 | ||
| JP2012150495A JP6050975B2 (ja) | 2012-03-27 | 2012-07-04 | リードフレーム、半導体装置及びリードフレームの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013229542A JP2013229542A (ja) | 2013-11-07 |
| JP2013229542A5 JP2013229542A5 (https=) | 2015-08-20 |
| JP6050975B2 true JP6050975B2 (ja) | 2016-12-21 |
Family
ID=47913264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012150495A Active JP6050975B2 (ja) | 2012-03-27 | 2012-07-04 | リードフレーム、半導体装置及びリードフレームの製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8928130B2 (https=) |
| EP (1) | EP2645415B1 (https=) |
| JP (1) | JP6050975B2 (https=) |
| CN (1) | CN103367300B (https=) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6032086B2 (ja) * | 2013-03-25 | 2016-11-24 | 豊田合成株式会社 | 発光装置 |
| JP6418625B2 (ja) * | 2013-12-13 | 2018-11-07 | 東芝メモリ株式会社 | 半導体装置の製造方法 |
| CN103887185B (zh) * | 2014-04-08 | 2017-01-18 | 安捷利(番禺)电子实业有限公司 | 一种用于芯片封装的引线框架的制备方法 |
| JP6375753B2 (ja) * | 2014-07-24 | 2018-08-22 | 大日本印刷株式会社 | リードフレームの多面付け体、樹脂付きリードフレームの多面付け体、半導体装置の多面付け体 |
| TWI610411B (zh) * | 2014-08-14 | 2018-01-01 | 艾馬克科技公司 | 用於半導體晶粒互連的雷射輔助接合 |
| KR20160028014A (ko) * | 2014-09-02 | 2016-03-11 | 삼성전자주식회사 | 반도체 소자 패키지 제조방법 |
| US9859481B2 (en) * | 2014-12-22 | 2018-01-02 | Nichia Corporation | Light emitting device |
| US9590158B2 (en) | 2014-12-22 | 2017-03-07 | Nichia Corporation | Light emitting device |
| JP2016207893A (ja) * | 2015-04-24 | 2016-12-08 | イビデン株式会社 | プリント配線板およびその製造方法 |
| JP6589577B2 (ja) * | 2015-11-10 | 2019-10-16 | 凸版印刷株式会社 | 樹脂付リードフレーム基板の製造方法 |
| CN109155349B (zh) * | 2016-05-18 | 2021-09-07 | 亮锐控股有限公司 | 照明组件及用于制造照明组件的方法 |
| TWI620279B (zh) * | 2016-09-30 | 2018-04-01 | Chang Wah Technology Co., Ltd. | 分離式預成形封裝導線架及其製作方法 |
| JP6777365B2 (ja) * | 2016-12-09 | 2020-10-28 | 大口マテリアル株式会社 | リードフレーム |
| US11081448B2 (en) * | 2017-03-29 | 2021-08-03 | Intel Corporation | Embedded die microelectronic device with molded component |
| JP6924411B2 (ja) * | 2017-08-28 | 2021-08-25 | 大日本印刷株式会社 | リードフレームおよび半導体装置の製造方法 |
| JP6637003B2 (ja) * | 2017-09-08 | 2020-01-29 | サンコール株式会社 | バスバーアッセンブリ |
| JP2020025019A (ja) | 2018-08-07 | 2020-02-13 | キオクシア株式会社 | 半導体装置 |
| TWI681572B (zh) * | 2018-11-26 | 2020-01-01 | 諾沛半導體有限公司 | 高覆蓋率發光二極體載板 |
| TWI672711B (zh) * | 2019-01-10 | 2019-09-21 | 健策精密工業股份有限公司 | 絕緣金屬基板及其製造方法 |
| DE102019106546A1 (de) | 2019-03-14 | 2020-09-17 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung von optoelektronischen halbleiterbauteilen und optoelektronisches halbleiterbauteil |
| TWI692846B (zh) * | 2019-03-21 | 2020-05-01 | 旭德科技股份有限公司 | 散熱基板及其製作方法 |
| CN112250029B (zh) * | 2020-11-10 | 2025-06-10 | 武汉飞恩微电子有限公司 | 压力传感器、基板结构及其制造方法 |
| EP4057338A1 (en) * | 2021-03-10 | 2022-09-14 | Hitachi Energy Switzerland AG | Metal substrate structure and method of manufacturing a metal substrate structure for a semiconductor power module and semiconductor power module |
| CN113193094B (zh) * | 2021-04-27 | 2023-03-21 | 成都辰显光电有限公司 | 批量转移方法和显示面板 |
| US20230038411A1 (en) * | 2021-08-03 | 2023-02-09 | Texas Instruments Incorporated | Semiconductor package with raised dam on clip or leadframe |
| TWI758227B (zh) * | 2021-09-06 | 2022-03-11 | 復盛精密工業股份有限公司 | 封裝導線架的製作方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3135823A (en) * | 1960-06-28 | 1964-06-02 | Pritikin Nathan | Metallic element embedding process and product |
| JP2781020B2 (ja) * | 1989-09-06 | 1998-07-30 | モトローラ・インコーポレーテッド | 半導体装置およびその製造方法 |
| JPH09252014A (ja) * | 1996-03-15 | 1997-09-22 | Nissan Motor Co Ltd | 半導体素子の製造方法 |
| JP2001177022A (ja) * | 1999-12-17 | 2001-06-29 | Matsushita Electric Ind Co Ltd | 熱伝導基板とその製造方法 |
| US6909178B2 (en) * | 2000-09-06 | 2005-06-21 | Sanyo Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US6870244B2 (en) * | 2000-12-27 | 2005-03-22 | Matsushita Electric Industrial Co., Ltd. | Lead frame and production process thereof and production process of thermally conductive substrate |
| JP3833938B2 (ja) * | 2000-12-27 | 2006-10-18 | 松下電器産業株式会社 | リードフレームおよびその製造方法、ならびに熱伝導性基板の製造方法 |
| JP2003309241A (ja) | 2002-04-15 | 2003-10-31 | Dainippon Printing Co Ltd | リードフレーム部材とリードフレーム部材の製造方法、及び該リードフレーム部材を用いた半導体パッケージとその製造方法 |
| JP2003309242A (ja) * | 2002-04-15 | 2003-10-31 | Dainippon Printing Co Ltd | リードフレーム部材とリードフレーム部材の製造方法、及び該リードフレーム部材を用いた半導体パッケージとその製造方法 |
| CN1549669A (zh) * | 2003-05-09 | 2004-11-24 | ������������ʽ���� | 板状体的制造方法及采用该板状体的电路装置制造方法 |
| JP4589170B2 (ja) * | 2005-04-28 | 2010-12-01 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
| KR101298225B1 (ko) * | 2005-06-30 | 2013-08-27 | 페어차일드 세미컨덕터 코포레이션 | 반도체 다이 패키지 및 그의 제조 방법 |
| JP2008098488A (ja) * | 2006-10-13 | 2008-04-24 | Matsushita Electric Ind Co Ltd | 熱伝導基板とその製造方法 |
| JP5526575B2 (ja) * | 2009-03-30 | 2014-06-18 | 凸版印刷株式会社 | 半導体素子用基板の製造方法および半導体装置 |
| US8501539B2 (en) * | 2009-11-12 | 2013-08-06 | Freescale Semiconductor, Inc. | Semiconductor device package |
| JP2012033855A (ja) * | 2010-07-01 | 2012-02-16 | Hitachi Cable Ltd | Ledモジュール、ledパッケージ、並びに配線基板およびその製造方法 |
| JP2013153068A (ja) * | 2012-01-25 | 2013-08-08 | Shinko Electric Ind Co Ltd | 配線基板、発光装置及び配線基板の製造方法 |
-
2012
- 2012-07-04 JP JP2012150495A patent/JP6050975B2/ja active Active
-
2013
- 2013-03-21 US US13/848,225 patent/US8928130B2/en active Active
- 2013-03-25 EP EP13160808.5A patent/EP2645415B1/en active Active
- 2013-03-26 CN CN201310100730.4A patent/CN103367300B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013229542A (ja) | 2013-11-07 |
| EP2645415B1 (en) | 2019-04-24 |
| CN103367300A (zh) | 2013-10-23 |
| CN103367300B (zh) | 2017-06-23 |
| EP2645415A2 (en) | 2013-10-02 |
| US20130256854A1 (en) | 2013-10-03 |
| EP2645415A3 (en) | 2018-01-24 |
| US8928130B2 (en) | 2015-01-06 |
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