JP6014587B2 - 高表面抵抗率の静電チャック - Google Patents
高表面抵抗率の静電チャック Download PDFInfo
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- JP6014587B2 JP6014587B2 JP2013512146A JP2013512146A JP6014587B2 JP 6014587 B2 JP6014587 B2 JP 6014587B2 JP 2013512146 A JP2013512146 A JP 2013512146A JP 2013512146 A JP2013512146 A JP 2013512146A JP 6014587 B2 JP6014587 B2 JP 6014587B2
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- electrostatic chuck
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/12—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
- B23Q3/152—Rotary devices
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/003—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts
- C04B37/005—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts consisting of glass or ceramic material
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- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/008—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of an organic adhesive, e.g. phenol resin or pitch
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- C—CHEMISTRY; METALLURGY
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/04—Ceramic interlayers
- C04B2237/06—Oxidic interlayers
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/04—Ceramic interlayers
- C04B2237/06—Oxidic interlayers
- C04B2237/062—Oxidic interlayers based on silica or silicates
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/04—Ceramic interlayers
- C04B2237/08—Non-oxidic interlayers
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/04—Ceramic interlayers
- C04B2237/08—Non-oxidic interlayers
- C04B2237/083—Carbide interlayers, e.g. silicon carbide interlayers
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/04—Ceramic interlayers
- C04B2237/08—Non-oxidic interlayers
- C04B2237/086—Carbon interlayers
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/341—Silica or silicates
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/343—Alumina or aluminates
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/365—Silicon carbide
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/368—Silicon nitride
Description
本出願は、2010年5月28日に出願された米国仮特許出願第61/349,504号明細書の利益を主張する。上記出願の教示全体は、参照により本明細書に援用される。
Claims (11)
- 静電チャックであって、
電極と、
前記電極における電圧によって作動して電荷を形成して、基板を前記静電チャックに静電的にクランプする表面層とを含み、前記表面層が、
(i)誘電体と、
(ii)ポリマーを含み、かつ約1×1012Ω/□〜約1×1016Ω/□の表面抵抗率を有する電荷制御層とを含み、電荷制御層に含まれるポリマーが、ポリエーテルイミド(PEI)およびポリエーテルエーテルケトン(PEEK)の少なくとも1つを含み、前記表面層がさらに、
(iii)複数のポリマー突出部を含み、前記複数のポリマー突出部が、前記複数のポリマー突出部を取り囲む前記電荷制御層の部分を超える高さまで延在して、前記基板の静電的なクランプ中に前記複数のポリマー突出部上で基板を支持する、静電チャック。 - 前記電荷制御層が約1×1013Ω/□〜約1×1016Ω/□の表面抵抗率を有する、請求項1に記載の静電チャック。
- 前記複数のポリマー突出部を形成するポリマーが、ポリエーテルイミド(PEI)、ポリイミド、およびポリエーテルエーテルケトン(PEEK)の少なくとも1つを含む、請求項1に記載の静電チャック。
- 前記複数のポリマー突出部を形成するポリマーがポリエーテルイミド(PEI)を含み、前記電荷制御層がポリエーテルイミド(PEI)から形成され、前記電荷制御層が約1×1013Ω/□〜約1×1016Ω/□の表面抵抗率を有する、請求項1に記載の静電チャック。
- 静電チャックの製造方法であって、
前記静電チャックにおける表面層を形成するステップを含み、前記表面層が、
(i)誘電体と、
(ii)ポリマーを含み、かつ約1×1012Ω/□〜約1×1016Ω/□の表面抵抗率を有する電荷制御層とを含み、電荷制御層に含まれるポリマーが、ポリエーテルイミド(PEI)およびポリエーテルエーテルケトン(PEEK)の少なくとも1つを含み、前記表面層がさらに、
(iii)複数のポリマー突出部を含み、前記複数のポリマー突出部が、
前記複数のポリマー突出部を取り囲む前記電荷制御層の部分を超える高さまで延在して、前記基板の静電的なクランプ中に前記複数のポリマー突出部上で基板を支持する、方法。 - 前記静電チャックの電源、電極構造、誘電体厚さ、機械的性質、およびクランプ力の少なくとも1つを変更しないことを含む、前記静電チャックの機能を変更することなく、前記静電チャックの使用中のウエハ固着の頻度を低下させるステップを含む、請求項5に記載の方法。
- 前記電荷制御層を形成するステップが、すでに作製された表面層の表面抵抗率を変化させるステップを含む、請求項5に記載の方法。
- 前記表面抵抗率を変化させるステップが、反応性イオンエッチング法を用いて、すでに作製された前記表面層を処理するステップを含む、請求項7に記載の方法。
- 前記表面抵抗率を変化させるステップが、すでに作製された前記表面層に対してプラズマ処理、化学処理、および再水素化処理の少なくとも1つを行うステップを含む、請求項8に記載の方法。
- 前記表面抵抗率を変化させるステップによって、処理前の表面抵抗率の±25%の表面抵抗率が処理後に得られる、請求項8に記載の方法。
- 前記電荷制御層を形成するステップの前に、
前記静電チャックの誘電体層を前記静電チャックの絶縁層に接合するステップと、
ケイ素を含有する窒化物、ケイ素を含有する酸化物、ケイ素を含有する炭化物、非化学量論量のケイ素を含有する窒化物、非化学量論量のケイ素を含有する酸化物、非化学量論量のケイ素を含有する炭化物、炭素、および炭素の窒化物化合物の少なくとも1つを含む接着コーティング層を前記静電チャックの前記誘電体層にコーティングするステップと、
電荷制御層ポリマーを含む電荷制御層を前記静電チャックの前記表面に接合するステップであって、前記電荷制御層ポリマーが、ポリエーテルイミド(PEI)、ポリイミド、およびポリエーテルエーテルケトン(PEEK)の少なくとも1つを含む、前記接合するステップと、
前記電荷制御層上にフォトレジストを堆積するステップと、
前記電荷制御層に対して反応性イオンエッチングを行って、前記電荷制御層に形成される複数のポリマー突出部を取り囲む、前記電荷制御層の一部を除去するステップと、
前記静電チャックから前記フォトレジストを除去し、それによって前記電荷制御層と同じ電荷制御層ポリマーから形成される前記複数のポリマー突出部を露出させるステップとを含む、請求項8に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US34950410P | 2010-05-28 | 2010-05-28 | |
US61/349,504 | 2010-05-28 | ||
PCT/US2011/037712 WO2011149918A2 (en) | 2010-05-28 | 2011-05-24 | High surface resistivity electrostatic chuck |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013533609A JP2013533609A (ja) | 2013-08-22 |
JP2013533609A5 JP2013533609A5 (ja) | 2014-06-19 |
JP6014587B2 true JP6014587B2 (ja) | 2016-10-25 |
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Application Number | Title | Priority Date | Filing Date |
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JP2013512146A Active JP6014587B2 (ja) | 2010-05-28 | 2011-05-24 | 高表面抵抗率の静電チャック |
Country Status (6)
Country | Link |
---|---|
US (1) | US9025305B2 (ja) |
JP (1) | JP6014587B2 (ja) |
KR (1) | KR101731136B1 (ja) |
CN (2) | CN105196094B (ja) |
TW (2) | TWI576957B (ja) |
WO (1) | WO2011149918A2 (ja) |
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TWI475594B (zh) | 2008-05-19 | 2015-03-01 | Entegris Inc | 靜電夾頭 |
WO2010132640A2 (en) | 2009-05-15 | 2010-11-18 | Entegris, Inc. | Electrostatic chuck with polymer protrusions |
US8861170B2 (en) | 2009-05-15 | 2014-10-14 | Entegris, Inc. | Electrostatic chuck with photo-patternable soft protrusion contact surface |
WO2014070764A1 (en) * | 2012-11-02 | 2014-05-08 | Entegris, Inc. | Electrostatic chuck with photo-patternable soft protrusion contact surface |
CN105196094B (zh) | 2010-05-28 | 2018-01-26 | 恩特格林斯公司 | 高表面电阻率静电吸盘 |
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2011
- 2011-05-24 CN CN201510535576.2A patent/CN105196094B/zh active Active
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- 2011-05-24 WO PCT/US2011/037712 patent/WO2011149918A2/en active Application Filing
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TW201639072A (zh) | 2016-11-01 |
TWI545683B (zh) | 2016-08-11 |
TWI576957B (zh) | 2017-04-01 |
KR101731136B1 (ko) | 2017-04-27 |
CN105196094B (zh) | 2018-01-26 |
WO2011149918A3 (en) | 2012-03-01 |
CN102986017A (zh) | 2013-03-20 |
KR20130088748A (ko) | 2013-08-08 |
CN102986017B (zh) | 2015-09-16 |
CN105196094A (zh) | 2015-12-30 |
JP2013533609A (ja) | 2013-08-22 |
US9025305B2 (en) | 2015-05-05 |
WO2011149918A2 (en) | 2011-12-01 |
US20130070384A1 (en) | 2013-03-21 |
TW201205716A (en) | 2012-02-01 |
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