JP6014258B2 - 結晶の製造方法 - Google Patents

結晶の製造方法 Download PDF

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Publication number
JP6014258B2
JP6014258B2 JP2015525338A JP2015525338A JP6014258B2 JP 6014258 B2 JP6014258 B2 JP 6014258B2 JP 2015525338 A JP2015525338 A JP 2015525338A JP 2015525338 A JP2015525338 A JP 2015525338A JP 6014258 B2 JP6014258 B2 JP 6014258B2
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crystal
solution
temperature
temperature range
crucible
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JPWO2015115543A1 (ja
Inventor
堂本　千秋
千秋 堂本
久芳　豊
豊 久芳
克明 正木
克明 正木
雄一郎 林
雄一郎 林
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Kyocera Corp
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Kyocera Corp
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/062—Vertical dipping system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/08—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/06—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using as solvent a component of the crystal composition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2015525338A 2014-01-29 2015-01-29 結晶の製造方法 Active JP6014258B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014014102 2014-01-29
JP2014014102 2014-01-29
PCT/JP2015/052520 WO2015115543A1 (ja) 2014-01-29 2015-01-29 結晶の製造方法

Related Child Applications (2)

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JP2016141548A Division JP6231622B2 (ja) 2014-01-29 2016-07-19 結晶の製造方法
JP2016185984A Division JP6267303B2 (ja) 2014-01-29 2016-09-23 結晶の製造方法

Publications (2)

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JP6014258B2 true JP6014258B2 (ja) 2016-10-25
JPWO2015115543A1 JPWO2015115543A1 (ja) 2017-03-23

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JP2016141548A Active JP6231622B2 (ja) 2014-01-29 2016-07-19 結晶の製造方法
JP2016185984A Active JP6267303B2 (ja) 2014-01-29 2016-09-23 結晶の製造方法
JP2017244801A Pending JP2018043930A (ja) 2014-01-29 2017-12-21 結晶の製造方法

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JP2016185984A Active JP6267303B2 (ja) 2014-01-29 2016-09-23 結晶の製造方法
JP2017244801A Pending JP2018043930A (ja) 2014-01-29 2017-12-21 結晶の製造方法

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US (1) US10443149B2 (enExample)
JP (4) JP6014258B2 (enExample)
WO (1) WO2015115543A1 (enExample)

Families Citing this family (8)

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US10573093B2 (en) 1995-06-07 2020-02-25 Automotive Technologies International, Inc. Vehicle computer design and use techniques for receiving navigation software
US10358057B2 (en) 1997-10-22 2019-07-23 American Vehicular Sciences Llc In-vehicle signage techniques
US9177476B2 (en) 1997-10-22 2015-11-03 American Vehicular Sciences Llc Method and system for guiding a person to a location
US10240935B2 (en) 1998-10-22 2019-03-26 American Vehicular Sciences Llc Vehicle software upgrade techniques
KR102092231B1 (ko) * 2015-10-26 2020-03-23 주식회사 엘지화학 실리콘계 용융 조성물 및 이를 이용한 SiC 단결정의 제조 방법
KR102061781B1 (ko) * 2015-10-26 2020-01-02 주식회사 엘지화학 실리콘계 용융 조성물 및 이를 이용한 SiC 단결정의 제조 방법
CN115787065A (zh) * 2021-09-10 2023-03-14 日立金属株式会社 单晶制造方法、单晶制造装置和坩埚
WO2025175274A1 (en) * 2024-02-16 2025-08-21 Vladimir Mancevski Joule heating of a mixed powder

Citations (6)

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JPH07172998A (ja) * 1993-12-21 1995-07-11 Toshiba Corp 炭化ケイ素単結晶の製造方法
JP2004002173A (ja) * 2002-04-15 2004-01-08 Sumitomo Metal Ind Ltd 炭化珪素単結晶とその製造方法
JP2009091222A (ja) * 2007-10-11 2009-04-30 Sumitomo Metal Ind Ltd ＳｉＣ単結晶の製造方法、ＳｉＣ単結晶ウエハ及びＳｉＣ半導体デバイス
JP2012162439A (ja) * 2011-02-09 2012-08-30 Toyota Motor Corp 溶液法によるＳｉＣ単結晶の製造方法
WO2013062130A1 (ja) * 2011-10-28 2013-05-02 京セラ株式会社 結晶の製造方法
JP2013540094A (ja) * 2010-10-21 2013-10-31 エスケー イノベーション カンパニー リミテッド 炭化珪素単結晶の製造方法及び装置

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US3353914A (en) * 1964-12-30 1967-11-21 Martin Marietta Corp Method of seed-pulling beta silicon carbide crystals from a melt containing silver and the product thereof
US7520930B2 (en) * 2002-04-15 2009-04-21 Sumitomo Metal Industries, Ltd. Silicon carbide single crystal and a method for its production
DE60324409D1 (de) * 2002-04-15 2008-12-11 Sumitomo Metal Ind Verfahren zur herstellung eines siliciumcarbid-einkristalles
JP4419937B2 (ja) * 2005-09-16 2010-02-24 住友金属工業株式会社 炭化珪素単結晶の製造方法
JP5071406B2 (ja) 2009-02-13 2012-11-14 トヨタ自動車株式会社 溶液法によるＳｉＣ単結晶成長用種結晶の複合接着方法
DE112009005154B4 (de) * 2009-07-17 2016-07-14 Toyota Jidosha Kabushiki Kaisha Verfahren zum Erzeugen eines SiC-Einkristalls
KR101666596B1 (ko) * 2009-09-29 2016-10-14 후지 덴키 가부시키가이샤 ＳｉＣ 단결정 및 그 제조 방법
BR112012018814A2 (pt) * 2010-01-27 2016-04-12 Afl Telecommunications Llc cabo de registro
JP5434801B2 (ja) 2010-06-03 2014-03-05 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
JP5273130B2 (ja) * 2010-11-26 2013-08-28 信越化学工業株式会社 ＳｉＣ単結晶の製造方法
US8838284B2 (en) * 2011-07-26 2014-09-16 General Electric Company Devices and methods for decentralized Volt/VAR control
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JPH07172998A (ja) * 1993-12-21 1995-07-11 Toshiba Corp 炭化ケイ素単結晶の製造方法
JP2004002173A (ja) * 2002-04-15 2004-01-08 Sumitomo Metal Ind Ltd 炭化珪素単結晶とその製造方法
JP2009091222A (ja) * 2007-10-11 2009-04-30 Sumitomo Metal Ind Ltd ＳｉＣ単結晶の製造方法、ＳｉＣ単結晶ウエハ及びＳｉＣ半導体デバイス
JP2013540094A (ja) * 2010-10-21 2013-10-31 エスケー イノベーション カンパニー リミテッド 炭化珪素単結晶の製造方法及び装置
JP2012162439A (ja) * 2011-02-09 2012-08-30 Toyota Motor Corp 溶液法によるＳｉＣ単結晶の製造方法
WO2013062130A1 (ja) * 2011-10-28 2013-05-02 京セラ株式会社 結晶の製造方法

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JP2017024985A (ja) 2017-02-02
JP2016179942A (ja) 2016-10-13
JPWO2015115543A1 (ja) 2017-03-23
US10443149B2 (en) 2019-10-15
JP6231622B2 (ja) 2017-11-15
WO2015115543A1 (ja) 2015-08-06
JP2018043930A (ja) 2018-03-22
JP6267303B2 (ja) 2018-01-24
US20160340795A1 (en) 2016-11-24

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