JP5953368B2 - 大きな粒子径を有する多結晶材料を製造するための装置及び方法 - Google Patents

大きな粒子径を有する多結晶材料を製造するための装置及び方法 Download PDF

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JP5953368B2
JP5953368B2 JP2014509339A JP2014509339A JP5953368B2 JP 5953368 B2 JP5953368 B2 JP 5953368B2 JP 2014509339 A JP2014509339 A JP 2014509339A JP 2014509339 A JP2014509339 A JP 2014509339A JP 5953368 B2 JP5953368 B2 JP 5953368B2
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crucible
frame
support block
bottom plate
void
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Expired - Fee Related
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JP2014509339A
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Japanese (ja)
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JP2014521577A (ja
JP2014521577A5 (enExample
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ブヴァラガサミー ガネサン ラヴィ，
ブヴァラガサミー ガネサン ラヴィ，
サンタナ ラガヴァン パルタサラティ，
サンタナ ラガヴァン パルタサラティ，
デーヴィッド ラッキー，
デーヴィッド ラッキー，
アンドレ アンドルキヴ，
アンドレ アンドルキヴ，
デーヴィッド リトル，
デーヴィッド リトル，
バラ バティ，
バラ バティ，
カール シャルティエ，
カール シャルティエ，
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GTAT Corp
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GTAT Corp
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
JP2014509339A 2011-05-02 2012-04-30 大きな粒子径を有する多結晶材料を製造するための装置及び方法 Expired - Fee Related JP5953368B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/098,989 2011-05-02
US13/098,989 US20120280429A1 (en) 2011-05-02 2011-05-02 Apparatus and method for producing a multicrystalline material having large grain sizes
PCT/US2012/035803 WO2012151155A2 (en) 2011-05-02 2012-04-30 Apparatus and method for producing a multicrystalline material having large grain sizes

Publications (3)

Publication Number Publication Date
JP2014521577A JP2014521577A (ja) 2014-08-28
JP2014521577A5 JP2014521577A5 (enExample) 2015-04-30
JP5953368B2 true JP5953368B2 (ja) 2016-07-20

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JP2014509339A Expired - Fee Related JP5953368B2 (ja) 2011-05-02 2012-04-30 大きな粒子径を有する多結晶材料を製造するための装置及び方法

Country Status (7)

Country Link
US (1) US20120280429A1 (enExample)
EP (1) EP2705177A4 (enExample)
JP (1) JP5953368B2 (enExample)
KR (1) KR20140044809A (enExample)
CN (1) CN103703169A (enExample)
TW (1) TWI547603B (enExample)
WO (1) WO2012151155A2 (enExample)

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TWI441962B (zh) * 2011-10-14 2014-06-21 Sino American Silicon Prod Inc 矽晶鑄錠及其製造方法（一）
CN103184516B (zh) * 2013-03-25 2015-07-01 湖南红太阳光电科技有限公司 一种降低阴影和硬质点的多晶硅铸锭热场结构及方法
CN103233264A (zh) * 2013-05-03 2013-08-07 江苏海翔化工有限公司 避免直拉法石英坩埚渗硅的硅料融化加热工艺
CN103469293B (zh) * 2013-09-02 2015-10-28 湖南红太阳光电科技有限公司 一种多晶硅的制备方法
US10415151B1 (en) * 2014-03-27 2019-09-17 Varian Semiconductor Equipment Associates, Inc Apparatus for controlling heat flow within a silicon melt
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
CN118380374A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
KR102477163B1 (ko) * 2018-02-23 2022-12-14 오씨아이 주식회사 결정 성장 장치 및 그 구동 방법
US11127572B2 (en) 2018-08-07 2021-09-21 Silfex, Inc. L-shaped plasma confinement ring for plasma chambers
CN115315775A (zh) 2020-03-23 2022-11-08 朗姆研究公司 衬底处理系统中的中环腐蚀补偿
JP7761376B2 (ja) 2020-07-30 2025-10-28 信越石英株式会社 石英ガラスるつぼ

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JP3368113B2 (ja) * 1995-09-05 2003-01-20 シャープ株式会社 多結晶半導体の製造方法
JPH09100199A (ja) * 1995-10-02 1997-04-15 Kyocera Corp ルチル単結晶の製造方法
JPH09255484A (ja) * 1996-03-26 1997-09-30 Sumitomo Sitix Corp 単結晶引き上げ用坩堝の支持部材
JPH10139580A (ja) * 1996-11-13 1998-05-26 Japan Steel Works Ltd:The 一方向凝固材の製造方法および一方向凝固装置
JP3520957B2 (ja) * 1997-06-23 2004-04-19 シャープ株式会社 多結晶半導体インゴットの製造方法および装置
JPH11310496A (ja) * 1998-02-25 1999-11-09 Mitsubishi Materials Corp 一方向凝固組織を有するシリコンインゴットの製造方法およびその製造装置
JP3964070B2 (ja) * 1999-04-08 2007-08-22 三菱マテリアルテクノ株式会社 結晶シリコン製造装置
TWI265198B (en) * 2002-12-02 2006-11-01 Univ Nat Taiwan The method and equipments for controlling the solidification of alloys in induction melting using cold crucible
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Also Published As

Publication number Publication date
TW201311949A (zh) 2013-03-16
WO2012151155A2 (en) 2012-11-08
EP2705177A2 (en) 2014-03-12
TWI547603B (zh) 2016-09-01
CN103703169A (zh) 2014-04-02
WO2012151155A3 (en) 2013-03-21
JP2014521577A (ja) 2014-08-28
KR20140044809A (ko) 2014-04-15
US20120280429A1 (en) 2012-11-08
EP2705177A4 (en) 2014-10-01

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