CN103703169A - 制造具有大粒径的多晶材料的装置及方法 - Google Patents

制造具有大粒径的多晶材料的装置及方法 Download PDF

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Publication number
CN103703169A
CN103703169A CN201280032882.9A CN201280032882A CN103703169A CN 103703169 A CN103703169 A CN 103703169A CN 201280032882 A CN201280032882 A CN 201280032882A CN 103703169 A CN103703169 A CN 103703169A
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China
Prior art keywords
crucible
crystal growth
box
depression
rest pad
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Pending
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CN201280032882.9A
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English (en)
Chinese (zh)
Inventor
B·G·拉维
S·R·帕萨芮彻
D·拉基
A·安德鲁凯文
D·利特尔
B·巴斯
C·夏蒂埃
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GTAT Corp
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GTAT Corp
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Application filed by GTAT Corp filed Critical GTAT Corp
Publication of CN103703169A publication Critical patent/CN103703169A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
CN201280032882.9A 2011-05-02 2012-04-30 制造具有大粒径的多晶材料的装置及方法 Pending CN103703169A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/098,989 US20120280429A1 (en) 2011-05-02 2011-05-02 Apparatus and method for producing a multicrystalline material having large grain sizes
US13/098,989 2011-05-02
PCT/US2012/035803 WO2012151155A2 (en) 2011-05-02 2012-04-30 Apparatus and method for producing a multicrystalline material having large grain sizes

Publications (1)

Publication Number Publication Date
CN103703169A true CN103703169A (zh) 2014-04-02

Family

ID=47089731

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280032882.9A Pending CN103703169A (zh) 2011-05-02 2012-04-30 制造具有大粒径的多晶材料的装置及方法

Country Status (7)

Country Link
US (1) US20120280429A1 (enExample)
EP (1) EP2705177A4 (enExample)
JP (1) JP5953368B2 (enExample)
KR (1) KR20140044809A (enExample)
CN (1) CN103703169A (enExample)
TW (1) TWI547603B (enExample)
WO (1) WO2012151155A2 (enExample)

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TWI441962B (zh) * 2011-10-14 2014-06-21 Sino American Silicon Prod Inc 矽晶鑄錠及其製造方法（一）
CN103184516B (zh) * 2013-03-25 2015-07-01 湖南红太阳光电科技有限公司 一种降低阴影和硬质点的多晶硅铸锭热场结构及方法
CN103233264A (zh) * 2013-05-03 2013-08-07 江苏海翔化工有限公司 避免直拉法石英坩埚渗硅的硅料融化加热工艺
CN103469293B (zh) * 2013-09-02 2015-10-28 湖南红太阳光电科技有限公司 一种多晶硅的制备方法
US10415151B1 (en) * 2014-03-27 2019-09-17 Varian Semiconductor Equipment Associates, Inc Apparatus for controlling heat flow within a silicon melt
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
CN118380375A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
KR102477163B1 (ko) * 2018-02-23 2022-12-14 오씨아이 주식회사 결정 성장 장치 및 그 구동 방법
US11127572B2 (en) 2018-08-07 2021-09-21 Silfex, Inc. L-shaped plasma confinement ring for plasma chambers
JP7466686B2 (ja) 2020-03-23 2024-04-12 ラム リサーチ コーポレーション 基板処理システムにおける中間リング腐食補償
JP7761376B2 (ja) 2020-07-30 2025-10-28 信越石英株式会社 石英ガラスるつぼ

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US20070028835A1 (en) * 2005-05-02 2007-02-08 Norichika Yamauchi Crucible apparatus and method of solidifying a molten material
CN101624723A (zh) * 2008-07-10 2010-01-13 昆山中辰矽晶有限公司 晶体形成方式及装置
WO2010005705A1 (en) * 2008-06-16 2010-01-14 Gt Solar Incorporated Systems and methods for growing monocrystalline silicon ingots by directional solidification

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US6299682B1 (en) * 1998-02-25 2001-10-09 Mitsubishi Materials Corporation Method for producing silicon ingot having directional solidification structure and apparatus for producing the same
US20070028835A1 (en) * 2005-05-02 2007-02-08 Norichika Yamauchi Crucible apparatus and method of solidifying a molten material
WO2010005705A1 (en) * 2008-06-16 2010-01-14 Gt Solar Incorporated Systems and methods for growing monocrystalline silicon ingots by directional solidification
TW201012986A (en) * 2008-06-16 2010-04-01 Chandra P Khattak Systems and methods for growing monocrystalline silicon ingots by directional solidification
CN101624723A (zh) * 2008-07-10 2010-01-13 昆山中辰矽晶有限公司 晶体形成方式及装置

Also Published As

Publication number Publication date
KR20140044809A (ko) 2014-04-15
EP2705177A4 (en) 2014-10-01
WO2012151155A3 (en) 2013-03-21
JP5953368B2 (ja) 2016-07-20
US20120280429A1 (en) 2012-11-08
TWI547603B (zh) 2016-09-01
TW201311949A (zh) 2013-03-16
EP2705177A2 (en) 2014-03-12
JP2014521577A (ja) 2014-08-28
WO2012151155A2 (en) 2012-11-08

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