TWI547603B - 製造具有大粒徑之多晶材料的裝置及方法 - Google Patents
製造具有大粒徑之多晶材料的裝置及方法 Download PDFInfo
- Publication number
- TWI547603B TWI547603B TW101115531A TW101115531A TWI547603B TW I547603 B TWI547603 B TW I547603B TW 101115531 A TW101115531 A TW 101115531A TW 101115531 A TW101115531 A TW 101115531A TW I547603 B TWI547603 B TW I547603B
- Authority
- TW
- Taiwan
- Prior art keywords
- crucible
- crystal growth
- support block
- growth apparatus
- coolant
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 239000000463 material Substances 0.000 title description 23
- 239000013078 crystal Substances 0.000 claims description 88
- 239000002826 coolant Substances 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 32
- 239000007787 solid Substances 0.000 claims description 23
- 239000002178 crystalline material Substances 0.000 claims description 21
- 239000002994 raw material Substances 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 17
- 229910052732 germanium Inorganic materials 0.000 claims description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 13
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 10
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 9
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 8
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 6
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 3
- AGDGPIPRLIPOPB-UHFFFAOYSA-N [La].[Ta] Chemical compound [La].[Ta] AGDGPIPRLIPOPB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 241001674044 Blattodea Species 0.000 claims 1
- 239000002245 particle Substances 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 238000004891 communication Methods 0.000 description 7
- 229910002804 graphite Inorganic materials 0.000 description 7
- 239000010439 graphite Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000007711 solidification Methods 0.000 description 5
- 230000008023 solidification Effects 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000003779 heat-resistant material Substances 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 238000012733 comparative method Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 241001260012 Bursa Species 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- NQKXFODBPINZFK-UHFFFAOYSA-N dioxotantalum Chemical compound O=[Ta]=O NQKXFODBPINZFK-UHFFFAOYSA-N 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/098,989 US20120280429A1 (en) | 2011-05-02 | 2011-05-02 | Apparatus and method for producing a multicrystalline material having large grain sizes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201311949A TW201311949A (zh) | 2013-03-16 |
| TWI547603B true TWI547603B (zh) | 2016-09-01 |
Family
ID=47089731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101115531A TWI547603B (zh) | 2011-05-02 | 2012-05-02 | 製造具有大粒徑之多晶材料的裝置及方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20120280429A1 (enExample) |
| EP (1) | EP2705177A4 (enExample) |
| JP (1) | JP5953368B2 (enExample) |
| KR (1) | KR20140044809A (enExample) |
| CN (1) | CN103703169A (enExample) |
| TW (1) | TWI547603B (enExample) |
| WO (1) | WO2012151155A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12398484B2 (en) | 2020-07-30 | 2025-08-26 | Shin-Etsu Quartz Products Co., Ltd. | Quartz glass crucible for growing a single crystal silicon ingot by a Czochralski (CZ) method |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI441962B (zh) * | 2011-10-14 | 2014-06-21 | Sino American Silicon Prod Inc | 矽晶鑄錠及其製造方法（一） |
| CN103184516B (zh) * | 2013-03-25 | 2015-07-01 | 湖南红太阳光电科技有限公司 | 一种降低阴影和硬质点的多晶硅铸锭热场结构及方法 |
| CN103233264A (zh) * | 2013-05-03 | 2013-08-07 | 江苏海翔化工有限公司 | 避免直拉法石英坩埚渗硅的硅料融化加热工艺 |
| CN103469293B (zh) * | 2013-09-02 | 2015-10-28 | 湖南红太阳光电科技有限公司 | 一种多晶硅的制备方法 |
| US10415151B1 (en) * | 2014-03-27 | 2019-09-17 | Varian Semiconductor Equipment Associates, Inc | Apparatus for controlling heat flow within a silicon melt |
| US10658222B2 (en) | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
| CN118380374A (zh) | 2017-11-21 | 2024-07-23 | 朗姆研究公司 | 底部边缘环和中部边缘环 |
| KR102477163B1 (ko) * | 2018-02-23 | 2022-12-14 | 오씨아이 주식회사 | 결정 성장 장치 및 그 구동 방법 |
| US11127572B2 (en) | 2018-08-07 | 2021-09-21 | Silfex, Inc. | L-shaped plasma confinement ring for plasma chambers |
| CN115315775A (zh) | 2020-03-23 | 2022-11-08 | 朗姆研究公司 | 衬底处理系统中的中环腐蚀补偿 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6299682B1 (en) * | 1998-02-25 | 2001-10-09 | Mitsubishi Materials Corporation | Method for producing silicon ingot having directional solidification structure and apparatus for producing the same |
| TW201012986A (en) * | 2008-06-16 | 2010-04-01 | Chandra P Khattak | Systems and methods for growing monocrystalline silicon ingots by directional solidification |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0603391B1 (en) * | 1992-05-15 | 1997-07-23 | Shin-Etsu Quartz Products Co., Ltd. | Vertical heat treatment apparatus and heat insulating material |
| JP3368113B2 (ja) * | 1995-09-05 | 2003-01-20 | シャープ株式会社 | 多結晶半導体の製造方法 |
| JPH09100199A (ja) * | 1995-10-02 | 1997-04-15 | Kyocera Corp | ルチル単結晶の製造方法 |
| JPH09255484A (ja) * | 1996-03-26 | 1997-09-30 | Sumitomo Sitix Corp | 単結晶引き上げ用坩堝の支持部材 |
| JPH10139580A (ja) * | 1996-11-13 | 1998-05-26 | Japan Steel Works Ltd:The | 一方向凝固材の製造方法および一方向凝固装置 |
| JP3520957B2 (ja) * | 1997-06-23 | 2004-04-19 | シャープ株式会社 | 多結晶半導体インゴットの製造方法および装置 |
| JP3964070B2 (ja) * | 1999-04-08 | 2007-08-22 | 三菱マテリアルテクノ株式会社 | 結晶シリコン製造装置 |
| TWI265198B (en) * | 2002-12-02 | 2006-11-01 | Univ Nat Taiwan | The method and equipments for controlling the solidification of alloys in induction melting using cold crucible |
| JP2005162507A (ja) * | 2003-11-28 | 2005-06-23 | Sharp Corp | 多結晶半導体インゴット製造装置、多結晶半導体インゴットの製造方法および多結晶半導体インゴット |
| JP2005289776A (ja) * | 2004-04-05 | 2005-10-20 | Canon Inc | 結晶製造方法および結晶製造装置 |
| JP2006308267A (ja) * | 2005-05-02 | 2006-11-09 | Iis Materials:Kk | るつぼ装置及びそれを用いた溶融材料の凝固方法 |
| JP2007197274A (ja) * | 2006-01-27 | 2007-08-09 | Toyota Motor Corp | 炭化珪素単結晶の製造方法 |
| KR100955221B1 (ko) * | 2007-10-05 | 2010-04-29 | 주식회사 글로실 | 힌지를 이용한 도어 개폐장치가 구비된 태양전지용 다결정실리콘 주괴 제조 장치 |
| US20090159244A1 (en) * | 2007-12-19 | 2009-06-25 | Stephen Mounioloux | Water-cooled cold plate with integrated pump |
| JP5002522B2 (ja) * | 2008-04-24 | 2012-08-15 | 株式会社日立製作所 | 電子機器用冷却装置及びこれを備えた電子機器 |
| JP2009298652A (ja) * | 2008-06-13 | 2009-12-24 | Sumco Corp | 黒鉛ルツボ及び該黒鉛ルツボを用いた石英ルツボの変形防止方法 |
| CN101624723B (zh) * | 2008-07-10 | 2012-06-06 | 昆山中辰矽晶有限公司 | 晶体形成方式及装置 |
| KR20100024675A (ko) * | 2008-08-26 | 2010-03-08 | 주식회사 아바코 | 잉곳 제조 장치 및 제조 방법 |
| TW201012988A (en) * | 2008-08-27 | 2010-04-01 | Bp Corp North America Inc | Gas recirculation heat exchanger for casting silicon |
| DE102008051492A1 (de) * | 2008-10-13 | 2010-04-15 | Pva Tepla Ag | Vorrichtung zum Kristallisieren von Nicht-Eisen-Metallen |
-
2011
- 2011-05-02 US US13/098,989 patent/US20120280429A1/en not_active Abandoned
-
2012
- 2012-04-30 CN CN201280032882.9A patent/CN103703169A/zh active Pending
- 2012-04-30 EP EP12779465.9A patent/EP2705177A4/en not_active Withdrawn
- 2012-04-30 WO PCT/US2012/035803 patent/WO2012151155A2/en not_active Ceased
- 2012-04-30 KR KR1020137031928A patent/KR20140044809A/ko not_active Withdrawn
- 2012-04-30 JP JP2014509339A patent/JP5953368B2/ja not_active Expired - Fee Related
- 2012-05-02 TW TW101115531A patent/TWI547603B/zh not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6299682B1 (en) * | 1998-02-25 | 2001-10-09 | Mitsubishi Materials Corporation | Method for producing silicon ingot having directional solidification structure and apparatus for producing the same |
| TW201012986A (en) * | 2008-06-16 | 2010-04-01 | Chandra P Khattak | Systems and methods for growing monocrystalline silicon ingots by directional solidification |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12398484B2 (en) | 2020-07-30 | 2025-08-26 | Shin-Etsu Quartz Products Co., Ltd. | Quartz glass crucible for growing a single crystal silicon ingot by a Czochralski (CZ) method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201311949A (zh) | 2013-03-16 |
| WO2012151155A2 (en) | 2012-11-08 |
| EP2705177A2 (en) | 2014-03-12 |
| CN103703169A (zh) | 2014-04-02 |
| WO2012151155A3 (en) | 2013-03-21 |
| JP2014521577A (ja) | 2014-08-28 |
| KR20140044809A (ko) | 2014-04-15 |
| US20120280429A1 (en) | 2012-11-08 |
| EP2705177A4 (en) | 2014-10-01 |
| JP5953368B2 (ja) | 2016-07-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |