KR20140044809A - 큰 입경을 갖는 다결정 재료의 제조장치 및 방법 - Google Patents

큰 입경을 갖는 다결정 재료의 제조장치 및 방법 Download PDF

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Publication number
KR20140044809A
KR20140044809A KR1020137031928A KR20137031928A KR20140044809A KR 20140044809 A KR20140044809 A KR 20140044809A KR 1020137031928 A KR1020137031928 A KR 1020137031928A KR 20137031928 A KR20137031928 A KR 20137031928A KR 20140044809 A KR20140044809 A KR 20140044809A
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South Korea
Prior art keywords
crucible
crystal growth
support block
growth apparatus
cavity
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Withdrawn
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KR1020137031928A
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English (en)
Korean (ko)
Inventor
부바라가사미 가네산 라비
산타나 래그해반 파스사라시
데이비드 라키
안드레 앤드루키브
데이비드 리틀
바라 바데이
칼 차티어
Original Assignee
지티에이티 코포레이션
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Application filed by 지티에이티 코포레이션 filed Critical 지티에이티 코포레이션
Publication of KR20140044809A publication Critical patent/KR20140044809A/ko
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
KR1020137031928A 2011-05-02 2012-04-30 큰 입경을 갖는 다결정 재료의 제조장치 및 방법 Withdrawn KR20140044809A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/098,989 2011-05-02
US13/098,989 US20120280429A1 (en) 2011-05-02 2011-05-02 Apparatus and method for producing a multicrystalline material having large grain sizes
PCT/US2012/035803 WO2012151155A2 (en) 2011-05-02 2012-04-30 Apparatus and method for producing a multicrystalline material having large grain sizes

Publications (1)

Publication Number Publication Date
KR20140044809A true KR20140044809A (ko) 2014-04-15

Family

ID=47089731

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137031928A Withdrawn KR20140044809A (ko) 2011-05-02 2012-04-30 큰 입경을 갖는 다결정 재료의 제조장치 및 방법

Country Status (7)

Country Link
US (1) US20120280429A1 (enExample)
EP (1) EP2705177A4 (enExample)
JP (1) JP5953368B2 (enExample)
KR (1) KR20140044809A (enExample)
CN (1) CN103703169A (enExample)
TW (1) TWI547603B (enExample)
WO (1) WO2012151155A2 (enExample)

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KR20190101797A (ko) * 2018-02-23 2019-09-02 오씨아이 주식회사 결정 성장 장치 및 그 구동 방법

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TWI441962B (zh) * 2011-10-14 2014-06-21 Sino American Silicon Prod Inc 矽晶鑄錠及其製造方法（一）
CN103184516B (zh) * 2013-03-25 2015-07-01 湖南红太阳光电科技有限公司 一种降低阴影和硬质点的多晶硅铸锭热场结构及方法
CN103233264A (zh) * 2013-05-03 2013-08-07 江苏海翔化工有限公司 避免直拉法石英坩埚渗硅的硅料融化加热工艺
CN103469293B (zh) * 2013-09-02 2015-10-28 湖南红太阳光电科技有限公司 一种多晶硅的制备方法
US10415151B1 (en) * 2014-03-27 2019-09-17 Varian Semiconductor Equipment Associates, Inc Apparatus for controlling heat flow within a silicon melt
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
CN118380374A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
US11127572B2 (en) 2018-08-07 2021-09-21 Silfex, Inc. L-shaped plasma confinement ring for plasma chambers
CN115315775A (zh) 2020-03-23 2022-11-08 朗姆研究公司 衬底处理系统中的中环腐蚀补偿
JP7761376B2 (ja) 2020-07-30 2025-10-28 信越石英株式会社 石英ガラスるつぼ

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190101797A (ko) * 2018-02-23 2019-09-02 오씨아이 주식회사 결정 성장 장치 및 그 구동 방법

Also Published As

Publication number Publication date
TW201311949A (zh) 2013-03-16
WO2012151155A2 (en) 2012-11-08
EP2705177A2 (en) 2014-03-12
TWI547603B (zh) 2016-09-01
CN103703169A (zh) 2014-04-02
WO2012151155A3 (en) 2013-03-21
JP2014521577A (ja) 2014-08-28
US20120280429A1 (en) 2012-11-08
EP2705177A4 (en) 2014-10-01
JP5953368B2 (ja) 2016-07-20

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PA0105 International application

Patent event date: 20131202

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid