JP5937696B2 - 改良型発光デバイス及び発光方法 - Google Patents
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Description
本願は2011年12月23日に出願された米国特許出願第13/336,540号に基づく優先権を主張し、同出願の開示は、その全体が引用により本明細書に援用される。
[技術分野]
本明細書にて開示される発明主題は、広くは発光デバイス及び発光方法に関する。より詳細には、本明細書に開示される発明主題は、デバイス内において、反射率を高め、熱性能を向上させ、かつ、接着性を向上させることによって、輝度を高めた発光デバイス及び発光方法に関する。
[背景技術]
発光ダイオード(LED)等の発光デバイスは、白色光(例えば,白色又は近白色として知覚される)を提供するパッケージで利用可能であり、また、白熱灯、蛍光灯、及びメタルハライド高輝度放電(HID)灯製品の代替品として開発されている。LEDデバイスの代表例は、少なくとも1つのLEDチップを有するデバイスを備え、LEDチップの一部は、例えばイットリウム・アルミニウム・ガーネット(YAG)等の蛍光物質で被覆することが可能である。蛍光物質の被覆によって、1つ以上のLEDチップから放出された光を白色光に変換することができる。例えば、LEDチップは所望の波長の光を放出可能であるが、蛍光物質はピーク波長が約550nmの黄色の蛍光を発することが可能である。観察者は、複数の光放出の混合を白色光として知覚する。蛍光物質によって変換された白色光の代わりとして、それぞれが赤色、緑色、及び青色(RGB)の波長の複数の発光デバイスを1つのデバイス又はパッケージ内で組み合わせて、白色として知覚される光を生成することができる。
[概要]
本開示に従って、産業用及び商業用の照明製品を含む様々な用途に十分に適した、新規な発光デバイス及び発光方法が提供される。したがって、本明細書の開示の目的は、デバイス内の反射率を高めることに一部起因して、改良されたより高輝度の発光デバイスを提供することにある。本開示の別の目的は、デバイスのサブマウントの1つ以上の層間の接着性を向上させたデバイスを提供することにある。
ベストモードを含む本発明主題の、当業者への全面的かつ実施可能な程度の開示を、添付図面の参照を含む、明細書の以下の記述においてより詳細に行う。
ここで、本明細書の発明主題の実施可能な態様又は実施形態を詳細に述べるとともに、このうち1つ以上の例を各図に示す。各例は本発明主題を説明するために示されるものであり、本発明をこれらに限定するものではない。実際、一実施形態の一部として図示又は記述される特徴は、別の実施形態で使用することにより、さらに別の実施形態を生じさせることが可能である。本明細書にて開示及び説明された本発明主題はこのような改変や変形を包含することが意図されている。
本発明を限定しない一態様において、伝導性パッド30は、約6.568mmの半径及び約135.5mm2の面積を有することができる。よって、1つのLEDチップ25の面積と伝導性パッド30との面積の比率は約0.0027以下とすることができる。一態様において、1つのLEDチップ25の面積と伝導性パッド30の面積との比率は約0.0018以下とすることができる。他の態様では、比率は約0.0012以下とすることができる。以下の表2では、種々のLED25のチップサイズと伝導性パッド30の面積を列挙している。LED25は、伝導性パッドの面積と比べると小さい、つまり伝導性パッドの面積の約0.0027倍以下のチップを備えることができる。しかしながら、任意のチップサイズを使用することができる。
単一の発光領域の上方に設置面積がより小さいLED25を多数用いることにより、発光領域16の一部の上方にLED25を1つ以上の均一なパターンで配列可能であるため、高輝度等の所望の光学的特性に加えてより均一な光出力を効果的に可能にする。LED25のこの集中したパターンによって、発光を集中させることが可能になる。一態様において、本明細書で説明した1つ以上のパターンにおけるLED25の密集度又は間隔は、隣接するLED25によって光が吸収又は遮断されないように調整することができる。すなわち、本明細書で開示されるLED25のパターン及び配列は、近接する又は隣接するLED25により吸収される光の量を最少に抑えることにより、光抽出を向上させてもよい。1ストリングあたりのLED25の数は、LEDデバイスが低電圧から高電圧まで動作可能となることを可能にする。例示目的で、4つのパターンが図示されてきた。しかしながら、LED25の任意の好適なパターンが想定される。LED25の各ストリングは、単一のパターンを含んでいてもよく、2つ以上のパターンの組み合わせを含んでいてもよい。
Claims (31)
- 1つ以上の発光ダイオード(LED)を支持するサブマウントを備えた発光デバイスであって、前記サブマウントが、
誘電体層と、
前記誘電体層の上に配置され、かつ、前記1つ以上のLEDから離間した導電性配線を含む、伝導層と、
前記伝導層の上に配置された反射層と、
前記反射層および前記伝導層を貫通する少なくとも1つの穴と、
前記穴内、前記誘電体層上、及び前記導電性配線の側壁にソルダーレジストの少なくとも一部が配置されるように前記反射層の上に配置され、かつ、反射材料を含む、ソルダーレジスト層と
を備える発光デバイス。 - 前記穴の一部は前記伝導層の表面上で終端する、請求項1に記載の発光デバイス。
- 前記反射層及び前記伝導層が前記穴の側壁を構成する、請求項1又は2に記載の発光デバイス。
- 前記サブマウントはさらに、前記反射層と前記伝導層との間に配置されたバリア層を備える、請求項1に記載の発光デバイス。
- 前記伝導層が銅(Cu)を含み、前記反射層が銀(Ag)を含み、前記バリア層がニッケル(Ni)を含む、請求項4に記載の発光デバイス。
- 前記伝導層は粗面テクスチャを備える、請求項1に記載の発光デバイス。
- 前記反射層に複数の穴が配置されている、請求項1に記載の発光デバイス。
- 前記少なくとも1つの穴は、約0.2〜500マイクロメートル(μm)の範囲にある深さを備える、請求項1〜7のいずれか一項に記載の発光デバイス。
- 1つ以上の発光ダイオードを備える、請求項1〜8のいずれか一項に記載の発光デバイス。
- 1つ以上の発光ダイオード(LED)を支持するサブマウントを提供する工程を含む、発光デバイスを提供する方法であって、前記サブマウントを提供する工程が、
誘電体層を提供する工程と、
前記誘電体層の上に、前記1つ以上のLEDから離間した導電性配線を有する伝導層を堆積する工程と、
前記伝導層の上に反射層を堆積する工程と、
前記反射層及び前記伝導層を貫通する少なくとも1つの穴を形成する工程と、
前記少なくとも1つの穴内、前記誘電体層上、及び前記導電性配線の側壁にソルダーレジストの少なくとも一部が配置されるように、前記反射層の上に、反射材料を含むソルダーレジスト層を堆積する工程と
を含む方法。 - 前記伝導層を堆積する工程は、銅(Cu)層を堆積する工程を含む、請求項10に記載の方法。
- 前記反射層を堆積する工程は、銀(Ag)層を堆積する工程を含む、請求項10又は11に記載の方法。
- 前記伝導層と前記反射層との間にバリア層を堆積する工程をさらに含む、請求項10〜12のいずれか一項に記載の方法。
- 前記少なくとも1つの穴を形成する工程は、前記穴を化学的にエッチングする工程を含む、請求項10〜13のいずれか一項に記載の方法。
- 前記少なくとも1つの穴を形成する工程は、前記穴の一部が前記伝導層の上面で終端するように前記反射層をエッチングする工程を含む、請求項10〜14のいずれか一項に記載の方法。
- 前記反射層及び前記伝導層に複数の穴を形成する工程をさらに含む、請求項10〜15のいずれか一項に記載の方法。
- 前記少なくとも1つの穴を形成する工程は、約0.2〜500マイクロメートル(μm)の範囲にある深さを有する少なくとも1つの穴を化学的にエッチングする工程を含む、請求項10〜16のいずれか一項に記載の方法。
- サブマウントと、
前記サブマウントの上方に配置された複数の発光ダイオード(LED)であって、1つ以上の電気コネクタによって電気的に接続されている、複数の発光ダイオード(LED)と、
前記複数のLEDの周囲に配置された保持材料であって、前記1つ以上の電気コネクタの少なくとも一部を被覆する保持材料と
を備え、
前記サブマウントが、
誘電体層と、
前記誘電体層の上に配置され、かつ、前記複数のLEDから離間した導電性配線を備える伝導層と、
前記伝導層の上に配置された反射層と、
前記反射層及び前記伝導層の一部を貫通する少なくとも1つの穴と、
前記穴内、前記誘電体層上、及び前記導電性配線の側壁にソルダーレジストの少なくとも一部が配置されるように、前記反射層の上に配置された、反射材料を含むソルダーレジスト層と
を含む、発光デバイス。 - 前記穴の一部は前記伝導層の表面上で終端する、請求項18に記載の発光デバイス。
- 前記反射層及び前記伝導層が前記穴の側壁を形成する、請求項18又は19に記載の発光デバイス。
- 前記少なくとも1つの穴は、約0.2〜500マイクロメートル(μm)の範囲にある深さを備える、請求項18〜20のいずれか一項に記載の発光デバイス。
- 1つ以上の発光ダイオード(LED)を支持するサブマウントを備えた発光デバイスであって、前記サブマウントが、
粗面テクスチャを備え、かつ、前記1つ以上のLEDから離間した導電性配線を備える伝導層と、
前記伝導層の上に配置された反射層であって、平滑面テクスチャを有し、反射層を貫通する穴を備える反射層と、
前記反射層の上、前記穴内、及び前記伝導層の粗面化された表面の上方に配置された、反射材料を含むソルダーレジスト層と
を備える、発光デバイス。 - 前記反射層は電解Agからなる層を含む、請求項22に記載の発光デバイス。
- 前記粗面テクスチャは、波状の表面テクスチャ、複数のリップ、又は複数のくぼみを備える、請求項22又は23に記載の発光デバイス。
- 前記発光デバイスが誘電体層をさらに備え、前記伝導層が前記誘電体層の上方に配置されている、請求項22〜24のいずれか一項に記載の発光デバイス。
- 1つ以上の発光ダイオード(LED)を支持するサブマウントを提供する工程を含む、発光デバイスを提供する方法であって、前記サブマウントを提供する工程が、
前記1つ以上のLEDから離間した導電性配線を備える伝導層を堆積する工程と、
前記伝導層の上に反射層を堆積する工程と、
前記反射層を貫通する穴を形成する工程と、
前記伝導層の表面を粗面化する工程と、
前記反射層の上方、前記穴内、及び前記伝導層の粗面化された表面の上方に、反射材料を含むソルダーレジスト層を堆積する工程と
を含む方法。 - 前記伝導層の表面を粗面化する工程は、前記表面を機械的又は化学的に研磨する工程を含む、請求項26に記載の方法。
- 前記方法は、誘電体層を提供する工程をさらに含み、前記伝導層は前記誘電体層の上方に配置されている、請求項26又は27に記載の方法。
- 発光デバイスを提供する方法であって、
1つ以上の発光ダイオード(LED)を支持するサブマウントを提供する工程であって、前記サブマウントが、誘電体層と、前記誘電体層の上に配置され、かつ、前記1つ以上のLEDから離間した導電性配線を有する伝導層と、前記伝導層の上に配置される反射層とを備える、工程と、
第1フォトマスクを施した後に前記反射層の一部をエッチングする工程と、
前記伝導層が前記反射層よりも面積が大きく、又は小さくなるように、第2フォトマスクを施した後に前記伝導層の一部をエッチングする工程と、
前記誘電体層の一部の上、前記反射層の一部の上、及び前記導電性配線の側壁に、反射材料を含むソルダーレジスト層を堆積する工程と
を含む方法。 - 前記ソルダーレジスト層が前記誘電体層の一部及び前記伝導層の一部に直接接着している、請求項29に記載の方法。
- 前記伝導層と前記反射層との間にバリア層を堆積する工程をさらに含む、請求項29又は30に記載の方法。
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US13/336,540 | 2011-12-23 | ||
PCT/US2012/070589 WO2013096431A1 (en) | 2011-12-23 | 2012-12-19 | Improved light emitting devices and methods |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USD823492S1 (en) | 2016-10-04 | 2018-07-17 | Cree, Inc. | Light emitting device |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USD707192S1 (en) | 2010-11-18 | 2014-06-17 | Cree, Inc. | Light emitting device |
USD712850S1 (en) | 2010-11-18 | 2014-09-09 | Cree, Inc. | Light emitter device |
US8564000B2 (en) | 2010-11-22 | 2013-10-22 | Cree, Inc. | Light emitting devices for light emitting diodes (LEDs) |
USD721339S1 (en) | 2010-12-03 | 2015-01-20 | Cree, Inc. | Light emitter device |
US8575639B2 (en) | 2011-02-16 | 2013-11-05 | Cree, Inc. | Light emitting devices for light emitting diodes (LEDs) |
US9300062B2 (en) | 2010-11-22 | 2016-03-29 | Cree, Inc. | Attachment devices and methods for light emitting devices |
US8624271B2 (en) | 2010-11-22 | 2014-01-07 | Cree, Inc. | Light emitting devices |
US9000470B2 (en) | 2010-11-22 | 2015-04-07 | Cree, Inc. | Light emitter devices |
US9490235B2 (en) | 2010-11-22 | 2016-11-08 | Cree, Inc. | Light emitting devices, systems, and methods |
USD706231S1 (en) | 2010-12-03 | 2014-06-03 | Cree, Inc. | Light emitting device |
US8455908B2 (en) | 2011-02-16 | 2013-06-04 | Cree, Inc. | Light emitting devices |
USD702653S1 (en) | 2011-10-26 | 2014-04-15 | Cree, Inc. | Light emitting device component |
US8809880B2 (en) | 2011-02-16 | 2014-08-19 | Cree, Inc. | Light emitting diode (LED) chips and devices for providing failure mitigation in LED arrays |
USD705181S1 (en) | 2011-10-26 | 2014-05-20 | Cree, Inc. | Light emitting device component |
CN104081112B (zh) | 2011-11-07 | 2016-03-16 | 克利公司 | 高电压阵列发光二极管(led)器件、设备和方法 |
US10043960B2 (en) * | 2011-11-15 | 2018-08-07 | Cree, Inc. | Light emitting diode (LED) packages and related methods |
JP2013118292A (ja) | 2011-12-02 | 2013-06-13 | Citizen Electronics Co Ltd | Led発光装置 |
US9735198B2 (en) | 2012-03-30 | 2017-08-15 | Cree, Inc. | Substrate based light emitter devices, components, and related methods |
US10134961B2 (en) | 2012-03-30 | 2018-11-20 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
US9590155B2 (en) * | 2012-06-06 | 2017-03-07 | Cree, Inc. | Light emitting devices and substrates with improved plating |
JP6080053B2 (ja) * | 2012-09-26 | 2017-02-15 | パナソニックIpマネジメント株式会社 | 発光モジュール |
US9029880B2 (en) * | 2012-12-10 | 2015-05-12 | LuxVue Technology Corporation | Active matrix display panel with ground tie lines |
US9159700B2 (en) | 2012-12-10 | 2015-10-13 | LuxVue Technology Corporation | Active matrix emissive micro LED display |
US9178123B2 (en) | 2012-12-10 | 2015-11-03 | LuxVue Technology Corporation | Light emitting device reflective bank structure |
US9345091B2 (en) | 2013-02-08 | 2016-05-17 | Cree, Inc. | Light emitting device (LED) light fixture control systems and related methods |
US10295124B2 (en) * | 2013-02-27 | 2019-05-21 | Cree, Inc. | Light emitter packages and methods |
US9040409B2 (en) * | 2013-03-15 | 2015-05-26 | Applied Materials, Inc. | Methods of forming solar cells and solar cell modules |
KR102085888B1 (ko) * | 2013-05-08 | 2020-03-06 | 엘지이노텍 주식회사 | 발광 소자 |
USD740453S1 (en) | 2013-06-27 | 2015-10-06 | Cree, Inc. | Light emitter unit |
USD739565S1 (en) | 2013-06-27 | 2015-09-22 | Cree, Inc. | Light emitter unit |
TWM475024U (zh) * | 2013-12-12 | 2014-03-21 | Lee-Sheng Yen | 可發光式封裝件及其承載結構 |
JP6661890B2 (ja) | 2014-05-21 | 2020-03-11 | 日亜化学工業株式会社 | 発光装置 |
USD771579S1 (en) * | 2014-05-26 | 2016-11-15 | Citizens Electronics Co., Ltd. | Light emitting diode |
TWI572005B (zh) * | 2014-09-05 | 2017-02-21 | 光寶光電(常州)有限公司 | 發光裝置 |
JP6583764B2 (ja) * | 2014-09-12 | 2019-10-02 | パナソニックIpマネジメント株式会社 | 発光装置、及び照明装置 |
JP6519135B2 (ja) * | 2014-09-26 | 2019-05-29 | 日亜化学工業株式会社 | 発光装置及び発光装置用基板 |
US9853197B2 (en) * | 2014-09-29 | 2017-12-26 | Bridgelux, Inc. | Light emitting diode package having series connected LEDs |
BR102015027316B1 (pt) * | 2014-10-31 | 2021-07-27 | Nichia Corporation | Dispositivo emissor de luz e sistema de lâmpada frontal de farol de acionamento adaptativo |
US10453825B2 (en) | 2014-11-11 | 2019-10-22 | Cree, Inc. | Light emitting diode (LED) components and methods |
USD786809S1 (en) * | 2015-05-20 | 2017-05-16 | Citizen Electronics Co., Ltd. | Light emitting diode |
CN107851693B (zh) | 2015-08-03 | 2020-02-18 | 创光科学株式会社 | 氮化物半导体发光元件用的基台及其制造方法 |
JP6443426B2 (ja) | 2016-11-08 | 2018-12-26 | 日亜化学工業株式会社 | 半導体装置の製造方法 |
US10804251B2 (en) | 2016-11-22 | 2020-10-13 | Cree, Inc. | Light emitting diode (LED) devices, components and methods |
JP6924642B2 (ja) * | 2017-07-19 | 2021-08-25 | スタンレー電気株式会社 | 半導体発光素子アレイ、及び、半導体発光装置 |
CN109755230A (zh) * | 2017-11-01 | 2019-05-14 | 立诚光电股份有限公司 | 发光二极管载具及其制造方法 |
US10957736B2 (en) | 2018-03-12 | 2021-03-23 | Cree, Inc. | Light emitting diode (LED) components and methods |
USD905648S1 (en) * | 2019-04-24 | 2020-12-22 | Patrick Art Ivs | LCD display |
EP3786518A1 (en) * | 2019-08-27 | 2021-03-03 | Seoul Semiconductor Europe GmbH | Illumination device |
US11083059B2 (en) | 2019-10-03 | 2021-08-03 | Creeled, Inc. | Lumiphoric arrangements for light emitting diode packages |
US11837684B2 (en) | 2019-11-21 | 2023-12-05 | Creeled, Inc. | Submount structures for light emitting diode packages |
CN111010810A (zh) * | 2019-11-27 | 2020-04-14 | 深圳市华星光电半导体显示技术有限公司 | 次毫米发光二极管的基板处理方法、其装置及其处理方法 |
JP1695410S (ja) * | 2021-01-26 | 2021-09-21 |
Family Cites Families (156)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4855194A (en) | 1988-02-05 | 1989-08-08 | The United States Of America As Represented By The United States Department Of Energy | Fuel cell having electrolyte inventory control volume |
US4866005A (en) | 1987-10-26 | 1989-09-12 | North Carolina State University | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
US4946547A (en) | 1989-10-13 | 1990-08-07 | Cree Research, Inc. | Method of preparing silicon carbide surfaces for crystal growth |
US5210051A (en) | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
US5200022A (en) | 1990-10-03 | 1993-04-06 | Cree Research, Inc. | Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product |
JPH0738940Y2 (ja) | 1991-05-13 | 1995-09-06 | スタンレー電気株式会社 | Led表示灯 |
US5393993A (en) | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
US5523589A (en) | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
JPH10311937A (ja) | 1997-05-14 | 1998-11-24 | Japan Aviation Electron Ind Ltd | 端面発光素子或は受光素子の実装構造 |
JP3862870B2 (ja) | 1997-09-25 | 2006-12-27 | 北陸電気工業株式会社 | 半田レスの端子金具を備えた電気部品 |
JP2000251977A (ja) | 1999-02-26 | 2000-09-14 | Fujitsu Ltd | 電源供給端子 |
US6442832B1 (en) | 1999-04-26 | 2002-09-03 | Agilent Technologies, Inc. | Method for coupling a circuit board to a transmission line that includes a heat sensitive dielectric |
US6548832B1 (en) | 1999-06-09 | 2003-04-15 | Sanyo Electric Co., Ltd. | Hybrid integrated circuit device |
DE10016817A1 (de) | 2000-04-05 | 2001-10-18 | Mannesmann Vdo Ag | Farb-Head-up Display, insbesondere für ein Fahrzeug |
JP2001294083A (ja) | 2000-04-14 | 2001-10-23 | Yazaki Corp | 車両の室内照明装置 |
US7055987B2 (en) | 2001-09-13 | 2006-06-06 | Lucea Ag | LED-luminous panel and carrier plate |
US7224000B2 (en) | 2002-08-30 | 2007-05-29 | Lumination, Llc | Light emitting diode component |
JP2004265986A (ja) | 2003-02-28 | 2004-09-24 | Citizen Electronics Co Ltd | 高輝度発光素子及びそれを用いた発光装置及び高輝度発光素子の製造方法 |
JP2004311948A (ja) * | 2003-03-27 | 2004-11-04 | Seiko Epson Corp | 半導体装置、半導体デバイス、電子機器、および半導体装置の製造方法 |
JP2004311101A (ja) | 2003-04-03 | 2004-11-04 | Koito Mfg Co Ltd | 車両用前照灯及び半導体発光素子 |
KR101183776B1 (ko) | 2003-08-19 | 2012-09-17 | 니치아 카가쿠 고교 가부시키가이샤 | 반도체 소자 |
US20050152145A1 (en) | 2003-08-28 | 2005-07-14 | Currie Robert M. | Vehicle lighting system having an electronic module circuit and light emitting diodes |
KR100541395B1 (ko) | 2003-09-09 | 2006-01-11 | 삼성전자주식회사 | 반도체칩 적층장치, 이것을 이용한 반도체 패키지의제조방법, 그리고 이러한 방법에 의하여 제조된 반도체패키지 |
WO2005038935A1 (ja) | 2003-10-15 | 2005-04-28 | Nichia Corporation | 発光装置 |
US20050199899A1 (en) | 2004-03-11 | 2005-09-15 | Ming-Der Lin | Package array and package unit of flip chip LED |
JP2005266117A (ja) | 2004-03-17 | 2005-09-29 | Rohm Co Ltd | 平面ディスプレイ |
US7791061B2 (en) | 2004-05-18 | 2010-09-07 | Cree, Inc. | External extraction light emitting diode based upon crystallographic faceted surfaces |
US7683391B2 (en) | 2004-05-26 | 2010-03-23 | Lockheed Martin Corporation | UV emitting LED having mesa structure |
DE102004047260B4 (de) | 2004-09-24 | 2006-08-03 | Siemens Ag | Isolierstoffgehäuse mit Belüftungsschacht |
KR101154801B1 (ko) | 2004-12-03 | 2012-07-03 | 엔지케이 스파크 플러그 캄파니 리미티드 | 세라믹 기판 및 발광 소자 수납용 세라믹 패키지 |
US7352440B2 (en) | 2004-12-10 | 2008-04-01 | Asml Netherlands B.V. | Substrate placement in immersion lithography |
US20060139595A1 (en) | 2004-12-27 | 2006-06-29 | Asml Netherlands B.V. | Lithographic apparatus and method for determining Z position errors/variations and substrate table flatness |
US7939842B2 (en) | 2005-01-27 | 2011-05-10 | Cree, Inc. | Light emitting device packages, light emitting diode (LED) packages and related methods |
USD528672S1 (en) | 2005-01-28 | 2006-09-19 | Matsushita Electric Industrial Co., Ltd. | LED module |
JP2006294898A (ja) | 2005-04-12 | 2006-10-26 | Sumitomo Metal Electronics Devices Inc | 発光素子収納用パッケージ |
USD535262S1 (en) | 2005-06-08 | 2007-01-16 | Matsushita Electric Industrial Co., Ltd. | Light emitting diode module |
US7365371B2 (en) | 2005-08-04 | 2008-04-29 | Cree, Inc. | Packages for semiconductor light emitting devices utilizing dispensed encapsulants |
US8901575B2 (en) | 2005-08-09 | 2014-12-02 | Seoul Viosys Co., Ltd. | AC light emitting diode and method for fabricating the same |
US8563339B2 (en) | 2005-08-25 | 2013-10-22 | Cree, Inc. | System for and method for closed loop electrophoretic deposition of phosphor materials on semiconductor devices |
US7479660B2 (en) | 2005-10-21 | 2009-01-20 | Perkinelmer Elcos Gmbh | Multichip on-board LED illumination device |
US7213940B1 (en) | 2005-12-21 | 2007-05-08 | Led Lighting Fixtures, Inc. | Lighting device and lighting method |
JP4049186B2 (ja) * | 2006-01-26 | 2008-02-20 | ソニー株式会社 | 光源装置 |
KR100819883B1 (ko) | 2006-02-17 | 2008-04-07 | 삼성전자주식회사 | 발광소자 패키지 및 그 제조방법 |
JP5027427B2 (ja) | 2006-02-23 | 2012-09-19 | パナソニック株式会社 | 発光ダイオードを用いた白色照明装置 |
KR100793338B1 (ko) * | 2006-02-23 | 2008-01-11 | 삼성전기주식회사 | 발광 다이오드 모듈 |
JP4992250B2 (ja) | 2006-03-01 | 2012-08-08 | 日亜化学工業株式会社 | 発光装置 |
KR100738933B1 (ko) | 2006-03-17 | 2007-07-12 | (주)대신엘이디 | 조명용 led 모듈 |
JP4789672B2 (ja) | 2006-03-29 | 2011-10-12 | 京セラ株式会社 | 発光装置および照明装置 |
CN2917018Y (zh) | 2006-04-10 | 2007-06-27 | 富士康(昆山)电脑接插件有限公司 | 线缆连接器组件 |
TWI301679B (en) | 2006-04-14 | 2008-10-01 | High Power Optoelectronics Inc | Semiconductor light emitting device and method of fabricating the same |
CN102800786B (zh) | 2006-04-24 | 2015-09-16 | 克利公司 | 发光二极管和显示元件 |
JP4605096B2 (ja) | 2006-05-30 | 2011-01-05 | ソニー株式会社 | バックライト装置及びカラー画像表示装置 |
JP2007335371A (ja) | 2006-06-19 | 2007-12-27 | Harison Toshiba Lighting Corp | 面照明装置 |
USD570506S1 (en) | 2006-06-20 | 2008-06-03 | Matsushita Electric Industrial Co., Ltd. | Lighting apparatus |
US8044418B2 (en) * | 2006-07-13 | 2011-10-25 | Cree, Inc. | Leadframe-based packages for solid state light emitting devices |
USD593043S1 (en) | 2006-07-14 | 2009-05-26 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode |
USD570797S1 (en) | 2006-07-14 | 2008-06-10 | Samsung Electro-Mechanics Co., Ltd. | Light-emitting diode |
US7804147B2 (en) | 2006-07-31 | 2010-09-28 | Cree, Inc. | Light emitting diode package element with internal meniscus for bubble free lens placement |
US7943952B2 (en) | 2006-07-31 | 2011-05-17 | Cree, Inc. | Method of uniform phosphor chip coating and LED package fabricated using method |
US8425271B2 (en) | 2006-09-01 | 2013-04-23 | Cree, Inc. | Phosphor position in light emitting diodes |
US7910938B2 (en) | 2006-09-01 | 2011-03-22 | Cree, Inc. | Encapsulant profile for light emitting diodes |
US20080089072A1 (en) | 2006-10-11 | 2008-04-17 | Alti-Electronics Co., Ltd. | High Power Light Emitting Diode Package |
USD575246S1 (en) | 2006-11-15 | 2008-08-19 | Citizen Electronics Co., Ltd. | Light-emitting diode unit for illuminating an object |
US9159888B2 (en) | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
USD573553S1 (en) | 2007-02-09 | 2008-07-22 | Matsushita Electric Industrial Co., Ltd. | Light source of light-emitting diode |
US8610143B2 (en) | 2007-03-12 | 2013-12-17 | Nichia Corporation | High output power light emitting device and package used therefor |
US7510400B2 (en) | 2007-03-14 | 2009-03-31 | Visteon Global Technologies, Inc. | LED interconnect spring clip assembly |
JP5089212B2 (ja) | 2007-03-23 | 2012-12-05 | シャープ株式会社 | 発光装置およびそれを用いたledランプ、発光装置の製造方法 |
JP4879794B2 (ja) * | 2007-03-27 | 2012-02-22 | シャープ株式会社 | 発光装置 |
US7656518B2 (en) | 2007-03-30 | 2010-02-02 | Asml Netherlands B.V. | Method of measuring asymmetry in a scatterometer, a method of measuring an overlay error in a substrate and a metrology apparatus |
US20080258130A1 (en) | 2007-04-23 | 2008-10-23 | Bergmann Michael J | Beveled LED Chip with Transparent Substrate |
USD576576S1 (en) | 2007-05-25 | 2008-09-09 | Matsushita Electric Industrial Co., Ltd. | Light source of light emitting diode |
US7614771B2 (en) | 2007-07-05 | 2009-11-10 | Tyco Electronics Corporation | Wireless controlled light emitting assembly |
US7621752B2 (en) | 2007-07-17 | 2009-11-24 | Visteon Global Technologies, Inc. | LED interconnection integrated connector holder package |
KR101283282B1 (ko) * | 2007-07-25 | 2013-07-11 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 그 제조방법 |
TWI478271B (zh) | 2007-08-10 | 2015-03-21 | 尼康股份有限公司 | Substrate bonding device and substrate bonding method |
JP2009044055A (ja) | 2007-08-10 | 2009-02-26 | Toshiba Lighting & Technology Corp | Ledモジュールおよびled照明器具 |
US7611376B2 (en) | 2007-11-20 | 2009-11-03 | Tyco Electronics Corporation | LED socket |
USD592615S1 (en) | 2007-12-05 | 2009-05-19 | Citizen Electronics Co., Ltd. | Light-emitting diode for illuminating an object |
USD607420S1 (en) | 2007-12-05 | 2010-01-05 | Citizen Electronics Co., Ltd. | Light-emitting diode for illuminating an object |
USD591248S1 (en) | 2007-12-05 | 2009-04-28 | Citizen Electronics Co., Ltd. | Light-emitting diode for illuminating an object |
CN101459211B (zh) * | 2007-12-11 | 2011-03-02 | 富士迈半导体精密工业(上海)有限公司 | 固态发光器件 |
US8167674B2 (en) | 2007-12-14 | 2012-05-01 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
US8049237B2 (en) | 2007-12-28 | 2011-11-01 | Nichia Corporation | Light emitting device |
US8058088B2 (en) | 2008-01-15 | 2011-11-15 | Cree, Inc. | Phosphor coating systems and methods for light emitting structures and packaged light emitting diodes including phosphor coating |
US8940561B2 (en) | 2008-01-15 | 2015-01-27 | Cree, Inc. | Systems and methods for application of optical materials to optical elements |
USD589470S1 (en) | 2008-02-01 | 2009-03-31 | Neobulb Technologies, Inc. | Light-emitting module |
TWI360239B (en) | 2008-03-19 | 2012-03-11 | E Pin Optical Industry Co Ltd | Package structure for light emitting diode |
US7833045B2 (en) | 2008-03-24 | 2010-11-16 | Avx Corporation | Insulation displacement connector (IDC) |
US8324723B2 (en) * | 2008-03-25 | 2012-12-04 | Bridge Semiconductor Corporation | Semiconductor chip assembly with bump/base heat spreader and dual-angle cavity in bump |
TW200945570A (en) | 2008-04-18 | 2009-11-01 | Top Crystal Technology Inc | High-voltage LED circuit with multi-staged threshold voltage and diode light-emitting device thereof |
CA128592S (en) | 2008-05-20 | 2009-11-30 | Philips Electronics Ltd | Led module |
US7667169B2 (en) | 2008-05-22 | 2010-02-23 | Omnivision Technologies, Inc. | Image sensor with simultaneous auto-focus and image preview |
US8461613B2 (en) | 2008-05-27 | 2013-06-11 | Interlight Optotech Corporation | Light emitting device |
JP2009289918A (ja) * | 2008-05-28 | 2009-12-10 | Alps Electric Co Ltd | 半導体発光装置 |
US9147812B2 (en) | 2008-06-24 | 2015-09-29 | Cree, Inc. | Methods of assembly for a semiconductor light emitting device package |
JP2010009972A (ja) | 2008-06-27 | 2010-01-14 | Toshiba Lighting & Technology Corp | 発光モジュール及び発光装置 |
US7859190B2 (en) | 2008-09-10 | 2010-12-28 | Bridgelux, Inc. | Phosphor layer arrangement for use with light emitting diodes |
US8247827B2 (en) | 2008-09-30 | 2012-08-21 | Bridgelux, Inc. | LED phosphor deposition |
USD603813S1 (en) | 2008-10-01 | 2009-11-10 | Toshiba Lighting & Technology Corporation | Light emitting diode module |
US20100096642A1 (en) | 2008-10-20 | 2010-04-22 | Brilliant Technology Co., Ltd. | Packaging struture for high power light emitting diode(led) chip |
JP2010199547A (ja) | 2009-01-30 | 2010-09-09 | Nichia Corp | 発光装置及びその製造方法 |
US8957435B2 (en) | 2009-04-28 | 2015-02-17 | Cree, Inc. | Lighting device |
USD615051S1 (en) | 2009-05-05 | 2010-05-04 | Prolight Opto Technology Corporation | LED package |
JP2011009298A (ja) | 2009-06-23 | 2011-01-13 | Citizen Electronics Co Ltd | 発光ダイオード光源装置 |
KR101061246B1 (ko) | 2009-07-08 | 2011-08-31 | 한성엘컴텍 주식회사 | 소켓 결합형의 led램프 |
JP5366688B2 (ja) | 2009-07-16 | 2013-12-11 | 日本航空電子工業株式会社 | ソケット、基板組立体及びそれを備える装置 |
US8901829B2 (en) | 2009-09-24 | 2014-12-02 | Cree Led Lighting Solutions, Inc. | Solid state lighting apparatus with configurable shunts |
US9713211B2 (en) | 2009-09-24 | 2017-07-18 | Cree, Inc. | Solid state lighting apparatus with controllable bypass circuits and methods of operation thereof |
JP2011071242A (ja) | 2009-09-24 | 2011-04-07 | Toshiba Lighting & Technology Corp | 発光装置及び照明装置 |
USD630171S1 (en) | 2009-10-16 | 2011-01-04 | Everlight Electronics Co., Ltd. | Light emitting diode |
USD615052S1 (en) | 2009-10-27 | 2010-05-04 | Citizen Electronics Co. Ltd. | Light-emitting diode |
US8337214B2 (en) | 2009-11-13 | 2012-12-25 | Cree, Inc. | Electrical connectors and light emitting device package and methods of assembling the same |
TWM379163U (en) | 2009-11-26 | 2010-04-21 | Truelight Corp | Packaging apparatus for high power and high orientation matrix semiconductor light-emitting devices |
TWM379717U (en) | 2009-11-26 | 2010-05-01 | Alliance Optotek Corp | Modular illuminating device |
KR101619832B1 (ko) | 2009-11-30 | 2016-05-13 | 삼성전자주식회사 | 발광다이오드 패키지, 이를 구비한 발광다이오드 패키지 모듈과 그 제조 방법, 및 이를 구비한 헤드 램프 모듈과 그 제어 방법 |
US7993025B2 (en) | 2009-12-01 | 2011-08-09 | Davinci Industrial Inc. | LED lamp |
US8241044B2 (en) | 2009-12-09 | 2012-08-14 | Tyco Electronics Corporation | LED socket assembly |
USD636899S1 (en) | 2010-01-28 | 2011-04-26 | Toshiba Lighting & Technology Corporation | Light emitting diode module |
US7955147B1 (en) | 2010-03-15 | 2011-06-07 | Zierick Manufacturing Corporation | Surface mount (SMT) crimp terminal and method of securing wire to same |
USD645417S1 (en) | 2010-04-01 | 2011-09-20 | Citizen Electronics Co., Ltd. | Light-emitting diode |
USD640997S1 (en) | 2010-04-01 | 2011-07-05 | Citizen Electronics Co., Ltd. | Light-emitting diode |
JP5781741B2 (ja) * | 2010-04-16 | 2015-09-24 | 日亜化学工業株式会社 | 発光装置 |
US8517572B2 (en) | 2010-05-06 | 2013-08-27 | Heathco, Llc | Method and apparatus pertaining to a cone-shaped lens in combination with a lateral member |
JP5846408B2 (ja) | 2010-05-26 | 2016-01-20 | 東芝ライテック株式会社 | 発光装置および照明装置 |
USD658603S1 (en) | 2010-06-15 | 2012-05-01 | Toshiba Lighting & Technology Corporation | Light emitting diode module |
USD658602S1 (en) | 2010-06-15 | 2012-05-01 | Toshiba Lighting & Technology Corporation | Light emitting diode module |
USD658601S1 (en) | 2010-06-15 | 2012-05-01 | Toshiba Lighting & Technology Corporation | Light emitting diode module |
US8410679B2 (en) | 2010-09-21 | 2013-04-02 | Cree, Inc. | Semiconductor light emitting devices with densely packed phosphor layer at light emitting surface |
USD669041S1 (en) | 2010-10-05 | 2012-10-16 | Citizen Electronics Co., Ltd. | Light-emitting diode |
USD637564S1 (en) | 2010-10-19 | 2011-05-10 | Edison Opto Corporation | Light emitting diode |
USD676000S1 (en) | 2010-11-22 | 2013-02-12 | Cree, Inc. | Light emitting device package |
USD707192S1 (en) | 2010-11-18 | 2014-06-17 | Cree, Inc. | Light emitting device |
USD712850S1 (en) | 2010-11-18 | 2014-09-09 | Cree, Inc. | Light emitter device |
US8564000B2 (en) | 2010-11-22 | 2013-10-22 | Cree, Inc. | Light emitting devices for light emitting diodes (LEDs) |
US8575639B2 (en) | 2011-02-16 | 2013-11-05 | Cree, Inc. | Light emitting devices for light emitting diodes (LEDs) |
US9300062B2 (en) | 2010-11-22 | 2016-03-29 | Cree, Inc. | Attachment devices and methods for light emitting devices |
USD650760S1 (en) | 2010-11-22 | 2011-12-20 | Cree, Inc. | Light emitting device package |
US9490235B2 (en) | 2010-11-22 | 2016-11-08 | Cree, Inc. | Light emitting devices, systems, and methods |
US8624271B2 (en) | 2010-11-22 | 2014-01-07 | Cree, Inc. | Light emitting devices |
US9000470B2 (en) | 2010-11-22 | 2015-04-07 | Cree, Inc. | Light emitter devices |
USD706231S1 (en) | 2010-12-03 | 2014-06-03 | Cree, Inc. | Light emitting device |
USD683708S1 (en) | 2010-12-09 | 2013-06-04 | Nichia Corporation | Light emitting diode |
US8455908B2 (en) | 2011-02-16 | 2013-06-04 | Cree, Inc. | Light emitting devices |
US8809880B2 (en) | 2011-02-16 | 2014-08-19 | Cree, Inc. | Light emitting diode (LED) chips and devices for providing failure mitigation in LED arrays |
USD702653S1 (en) | 2011-10-26 | 2014-04-15 | Cree, Inc. | Light emitting device component |
EP2503214B1 (en) | 2011-03-24 | 2016-05-18 | OSRAM GmbH | Mounting structure for solid-state light sources |
US20130058099A1 (en) | 2011-09-02 | 2013-03-07 | Soraa, Inc. | High Intensity Light Source with Interchangeable Optics |
USD705181S1 (en) | 2011-10-26 | 2014-05-20 | Cree, Inc. | Light emitting device component |
CN104081112B (zh) | 2011-11-07 | 2016-03-16 | 克利公司 | 高电压阵列发光二极管(led)器件、设备和方法 |
USD689451S1 (en) | 2012-01-24 | 2013-09-10 | Toyoda Gosei Co., Ltd. | Light emitting diode |
US9343441B2 (en) | 2012-02-13 | 2016-05-17 | Cree, Inc. | Light emitter devices having improved light output and related methods |
CN104115291A (zh) | 2012-02-13 | 2014-10-22 | 克利公司 | 改进的发光设备和方法 |
US9240530B2 (en) | 2012-02-13 | 2016-01-19 | Cree, Inc. | Light emitter devices having improved chemical and physical resistance and related methods |
US9735198B2 (en) | 2012-03-30 | 2017-08-15 | Cree, Inc. | Substrate based light emitter devices, components, and related methods |
-
2011
- 2011-12-23 US US13/336,540 patent/US8455908B2/en active Active
-
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- 2012-12-19 WO PCT/US2012/070589 patent/WO2013096431A1/en active Application Filing
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USD823492S1 (en) | 2016-10-04 | 2018-07-17 | Cree, Inc. | Light emitting device |
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US8921869B2 (en) | 2014-12-30 |
US20130334548A1 (en) | 2013-12-19 |
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US8455908B2 (en) | 2013-06-04 |
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