JP6106859B2 - 発光デバイスおよび方法 - Google Patents
発光デバイスおよび方法 Download PDFInfo
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- JP6106859B2 JP6106859B2 JP2013540955A JP2013540955A JP6106859B2 JP 6106859 B2 JP6106859 B2 JP 6106859B2 JP 2013540955 A JP2013540955 A JP 2013540955A JP 2013540955 A JP2013540955 A JP 2013540955A JP 6106859 B2 JP6106859 B2 JP 6106859B2
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
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- H01L2924/11—Device type
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Fastening Of Light Sources Or Lamp Holders (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Description
本出願は、2010年11月22日に出願された米国仮特許出願番号第61/416,184号および2011年5月10日に出願された一部継続出願の米国特許出願番号第13/104,558号の利益を主張し、その開示の全体が参照により本明細書に組み込まれる。本出願は、2010年11月22日に出願された米国意匠特許出願番号第29/379,636号、2011年2月16日に出願された一部継続出願の米国特許出願番号第13/028,972号、および2011年10月26日に出願された米国特許出願番号第13/282,172号に関連する。
本明細書で開示される主題は、一般に、発光デバイスおよび方法に関する。より詳細には、本明細書で開示される主題は、発光ダイオード(LED)の少なくとも1つのパターンおよび/またはアレイを備える発光デバイスならびに方法に関する。
発光ダイオード(LED)などの発光デバイスは、白色光(たとえば、白色またはほぼ白色であると知覚される)を提供するためにパッケージで利用することができ、白熱灯、蛍光灯、および金属ハライド高輝度放電(HID)ライト製品用の代替品として開発されている。LEDデバイスの代表的な例は、LEDチップであって、その一部分がたとえばイットリウムアルミニウムガーネット(YAG)などの蛍光体で被覆されうる、少なくとも1つのLEDチップを有するデバイスを備える。蛍光体被覆は、1つまたは複数のLEDチップから放出される光を白色光に変換しうる。たとえば、LEDチップは、所望の波長を有する光を放出し、蛍光体は、次に、たとえば約550nmのピーク波長を有する黄色の蛍光を放出しうる。観察者は、光放出の混合物を白色光として知覚する。白色光変換蛍光体の代替として、赤色、緑色、および青色(RGB)波長の発光デバイスが、1つのデバイスまたはパッケージまたはデバイス内で組み合わされて、白色として知覚される光を生成しうる。
本開示によれば、工業的および商業的照明製品を含む種々の用途に好適である新規な発光デバイスおよび方法が提供される。したがって、エネルギー節減を提供しながら、光出力性能を増大させ、種々の低電圧用途から高電圧用途に対処するために最適化された発光デバイスの少なくとも1つのパターン、配置、および/またはアレイを備える、発光デバイスおよび方法を提供することが、本明細書で開示される本発明の目的である。
当業者に対する、その最良態様を含む本主題の完全でかつ実施可能な程度の開示は、添付図面に対する参照を含む、本明細書の残りの部分でより詳細に述べられる。
一態様では、限定されることなく、伝導性パッド30は、約6.568mmの半径および約135.7mm2の面積を有しうる。そのため、単一LEDチップ25の面積と伝導性エリア30の面積との比は、約0.0027以下を含みうる。一態様では、単一LEDチップ25の面積と伝導性エリア30の面積との比は、約0.0018以下を含みうる。他の態様では、比は、約0.0012以下を含みうる。以下の表2では、種々のLED25のチップサイズおよび伝導性パッド30の面積が挙げられる。LED25は、伝導性パッドの面積と比較して小さい、すなわち伝導性パッドの面積の約0.0027以下であるチップを備えうる。しかし、任意のチップサイズを使用することができる。
単一放出エリア上で小さなフットプリントを備える多数のLED25を使用することは、LED25が放出エリア16の部分上で1つまたは複数の均一なパターンになるよう配列されうるため、高い輝度などの望ましい光学特性に加えて、より均一な光出力を有利に可能にしうる。LED25の集中化パターンは、集中化された光放出を可能にしうる。一態様では、本明細書で述べる1つまたは複数のパターン内のLED25の密度または間隔は、隣接するLED25によって光が吸収または遮断されないように調整されうる。すなわち、本明細書で開示されるLED25のパターンまたは配置は、隣接するLED25または近傍のLED25によって吸収される光の量を最小にすることによって光抽出を改善する場合がある。1ストリング当たりのLED25の数は、LEDデバイスが低電圧から高電圧で動作可能であることを可能にしうる。説明の目的で、4つのパターンが示されている。しかし、LED25の任意の適したパターンが企図される。LED25の各ストリングは、単一パターンまたは1より多いパターンの組合せを備えうる。
Claims (45)
- 発光デバイスであって、
基板と、
前記基板上にアレイで配設された複数の発光ダイオード(LED)であって、前記アレイは、ストリングを構成するLEDの複数の異なる配置形態を含み、前記LEDの少なくとも1つの配置形態は、隣接するLED同士が各LEDの一側面を通る共通の水平ラインの上と下の両方に交互に配置されるチェッカーボードパターンを形成するように隣接するLED同士が接続されて、非直線状をなしている、発光ダイオード(LED)と、
前記LEDのアレイの周りに吐出された保持材料と、を備えるデバイス。 - 前記保持材料が反射材料を含む、請求項1に記載のデバイス。
- 前記複数のLEDは、64より多いLEDである、請求項1に記載のデバイス。
- 前記LEDのアレイは、LEDの2つ以上のストリングを備え、前記LEDの2つ以上のストリングは、直列に電気接続された複数のLEDを備える、請求項1に記載のデバイス。
- 前記LEDはそれぞれ、約470μm以下の長さおよび約350μm以下の幅を有する、請求項1に記載のデバイス。
- 約16ボルト(V)以下で動作可能である、請求項1に記載のデバイス。
- 約16ボルト(V)以上の動作のために構成される、請求項1に記載のデバイス。
- 約42ボルト(V)以上の動作のために構成される、請求項1に記載のデバイス。
- 前記基板は、少なくとも1つの電気トレースにワイヤボンディングされる少なくとも1つのESDチップを備え、前記保持材料は、前記少なくとも1つのESDチップ上に吐出される、請求項1に記載のデバイス。
- 前記基板は、第1および第2の電気トレースを備え、LEDの各ストリングは、電気コネクタを介して前記第1および第2の電気トレースに電気接続される、請求項4に記載のデバイス。
- 前記保持材料は、前記電気コネクタの一部分の上に少なくとも部分的に吐出される、請求項10に記載のデバイス。
- 前記LEDの2つ以上のストリングは、直列に電気接続された5つ以上のLEDを備える、請求項4に記載のデバイス。
- 前記LEDの2つ以上のストリングは、直列に電気接続された14のLEDを備える、請求項4に記載のデバイス。
- 前記複数の異なる配置形態は、
(i)直線配置、および/または
(ii)格子配置であって、前記LEDが少なくとも2つの方向に実質的に整列する、格子配置
を備える、請求項1に記載のデバイス。 - 発光デバイスであって、
基板と、
前記基板上に配設された、直列的に電気接続される発光ダイオード(LED)の1つまたは複数のストリングと、を備え、LEDの各ストリングは5つ以上のLEDを有し、第1のストリングの少なくともいくつかのLED同士は第1の距離にて離間され、第2のストリングの少なくともいくつかのLED同士は、第1の距離とは異なる第2の距離にて離間され、
前記第1のストリングのLEDが、異なる向きでダイ取付けされており、第1のストリングのLEDのいくつかが同ストリングの他のLEDに対して直角をなすように配置される、デバイス。 - 前記LEDの1つまたは複数のストリングは、ストリングを構成するLEDの1つまたは複数の配置形態を備える、請求項15に記載のデバイス。
- 前記1つまたは複数の配置形態は、
(i)チェッカーボード配置
(ii)直線配置
(iii)格子配置であって、前記LEDが少なくとも2つの方向に実質的に整列する、格子配置
のうち少なくとも2つを備える、請求項16に記載のデバイス。 - LEDの5つより多いストリングを備える、請求項15に記載のデバイス。
- LEDの10より多いストリングを備える、請求項15に記載のデバイス。
- LEDの30のストリングを備える、請求項15に記載のデバイス。
- LEDの各配置形態は14のLEDを備える、請求項16に記載のデバイス。
- LEDの各ストリングは5つのLEDを備える、請求項18に記載のデバイス。
- 64より多いLEDを備える、請求項15に記載のデバイス。
- 約16ボルト(V)以上の動作のために構成される、請求項15に記載のデバイス。
- 約16V以下の動作のために構成される、請求項15に記載のデバイス。
- 約42V以上の動作のために構成される、請求項15に記載のデバイス。
- 発光デバイスを提供する方法であって、
基板を用意するステップと、
複数の発光ダイオード(LED)を前記基板にアレイで取付けるステップであって、前記アレイは、ストリングを構成するLEDの1つまたは複数の配置形態を備え、前記複数のLEDを取付けるステップが、隣接するLED同士が各LEDの一側面を通る共通の水平ラインの上と下の両方に交互に配置されるチェッカーボードパターンを形成するよう隣接するLED同士が接続されるように、非直線状の配置形態でLEDを取付けることを含む、ステップと、
前記LEDのアレイの周りに保持材料を吐出するステップと、を含む方法。 - 前記複数のLEDを取付けるステップは、前記LEDを前記基板にダイ取付けするためにフラックスアシスト共晶、金属アシスト非共晶、または熱圧着を使用するステップを含む、請求項27に記載の方法。
- 前記複数のLEDを取付けるステップは、前記LEDを、前記基板の第1および第2の伝導性トレースに直列に電気接続するステップを含む、請求項27に記載の方法。
- 前記複数のLEDをアレイで取付けるステップは、LEDの1つまたは複数のストリングを前記基板に取付けるステップを含み、各ストリングは、直列に接続された5つ以上のLEDを備える、請求項27に記載の方法。
- LEDの1つまたは複数のストリングを取付けるステップは、LEDの5つより多いストリングを前記基板に取付けるステップを含む、請求項30に記載の方法。
- LEDの1つまたは複数のストリングを取付けるステップは、LEDの10より多いストリングを前記基板に取付けるステップを含む、請求項30に記載の方法。
- LEDの1つまたは複数のストリングを取付けるステップは、LEDの30のストリングを前記基板に取付けるステップを含む、請求項30に記載の方法。
- 前記複数のLEDをアレイで取付けるステップは、64より多いLEDを前記基板に取付けるステップを含む、請求項27に記載の方法。
- 複数のLEDを取付けるステップは、以下の配置形態、
(i)直線配置、および/または
(ii)格子配置であって、前記LEDが少なくとも2つの方向に実質的に整列する、格子配置
で前記LEDを取付けることを含む、請求項27に記載の方法。 - 発光デバイスであって、
基板と、
前記基板上にアレイで配設された複数の発光ダイオード(LED)と、
前記LEDのアレイの周りにてそのLEDのアレイに近接して少なくとも部分的に配設された保持材料とを備え、
前記LEDのアレイは、ストリングを構成するLEDの1つ又は複数の異なる配置形態を備え、前記複数のLEDの少なくとも一部は、LEDの別個のストリングを形成するためにワイヤボンドによって電気接続され、LEDの各ストリングは、前記保持材料によってカバーされる少なくとも1つのワイヤボンドを有し、LEDの少なくとも1つの配置形態は、隣接するLED同士が各LEDの一側面を通る共通の水平ラインの上と下の両方に交互に配置されるチェッカーボードパターンを形成するよう隣接するLED同士が接続されるように、非直線的である、デバイス。 - 64より多いLEDを備える、請求項36に記載のデバイス。
- 前記LEDはそれぞれ、約470μm以下の長さおよび約350μm以下の幅を有する、請求項36に記載のデバイス。
- 前記1つまたは複数の配置形態は、
(i)直線配置、および/または
(ii)格子配置であって、前記LEDが少なくとも2つの方向に実質的に整列する、格子配置
を備える、請求項36に記載のデバイス。 - 前記基板は、少なくとも1つの電気トレースにワイヤボンディングされる少なくとも1つのESDチップを備え、前記保持材料は、前記少なくとも1つのESDチップ上に吐出される、請求項36に記載のデバイス。
- 前記保持材料が反射材料を含む、請求項36に記載のデバイス。
- 前記保持材料が丸みを帯びた外壁を有する、請求項1又は36に記載のデバイス。
- LEDの1つまたは複数のストリングの周りに配設される保持材料をさらに備え、前記保持材料が丸みを帯びた外壁を有する、請求項15に記載のデバイス。
- 前記LEDが、第1のストリングにおける直列的に接続されたLED間のストリング内の間隔と、第1のストリングおよび直列的に接続された第2のストリングの間におけるストリング間の間隔とを備え、ストリング間の間隔が、ストリング内の間隔とは異なっている、請求項1、15、および36のいずれか一項に記載のデバイス。
- 前記LEDの少なくともいくつかが、前記LEDの別の少なくともいくつかと直角をなすように、前記LEDが異なる向きでダイ取付けされる、請求項1、および36のいずれか一項に記載のデバイス。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10134961B2 (en) | 2012-03-30 | 2018-11-20 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
Families Citing this family (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10008637B2 (en) | 2011-12-06 | 2018-06-26 | Cree, Inc. | Light emitter devices and methods with reduced dimensions and improved light output |
USD712850S1 (en) | 2010-11-18 | 2014-09-09 | Cree, Inc. | Light emitter device |
USD707192S1 (en) | 2010-11-18 | 2014-06-17 | Cree, Inc. | Light emitting device |
US8564000B2 (en) | 2010-11-22 | 2013-10-22 | Cree, Inc. | Light emitting devices for light emitting diodes (LEDs) |
USD721339S1 (en) | 2010-12-03 | 2015-01-20 | Cree, Inc. | Light emitter device |
US8624271B2 (en) | 2010-11-22 | 2014-01-07 | Cree, Inc. | Light emitting devices |
US9000470B2 (en) | 2010-11-22 | 2015-04-07 | Cree, Inc. | Light emitter devices |
US10267506B2 (en) | 2010-11-22 | 2019-04-23 | Cree, Inc. | Solid state lighting apparatuses with non-uniformly spaced emitters for improved heat distribution, system having the same, and methods having the same |
US9300062B2 (en) | 2010-11-22 | 2016-03-29 | Cree, Inc. | Attachment devices and methods for light emitting devices |
US9490235B2 (en) | 2010-11-22 | 2016-11-08 | Cree, Inc. | Light emitting devices, systems, and methods |
US8575639B2 (en) | 2011-02-16 | 2013-11-05 | Cree, Inc. | Light emitting devices for light emitting diodes (LEDs) |
USD706231S1 (en) | 2010-12-03 | 2014-06-03 | Cree, Inc. | Light emitting device |
US8455908B2 (en) | 2011-02-16 | 2013-06-04 | Cree, Inc. | Light emitting devices |
US8809880B2 (en) | 2011-02-16 | 2014-08-19 | Cree, Inc. | Light emitting diode (LED) chips and devices for providing failure mitigation in LED arrays |
USD702653S1 (en) | 2011-10-26 | 2014-04-15 | Cree, Inc. | Light emitting device component |
TW201312807A (zh) | 2011-07-21 | 2013-03-16 | Cree Inc | 光發射器元件封裝與部件及改良化學抵抗性的方法與相關方法 |
US10686107B2 (en) | 2011-07-21 | 2020-06-16 | Cree, Inc. | Light emitter devices and components with improved chemical resistance and related methods |
US10211380B2 (en) * | 2011-07-21 | 2019-02-19 | Cree, Inc. | Light emitting devices and components having improved chemical resistance and related methods |
USD705181S1 (en) | 2011-10-26 | 2014-05-20 | Cree, Inc. | Light emitting device component |
KR20140097284A (ko) | 2011-11-07 | 2014-08-06 | 크리,인코포레이티드 | 고전압 어레이 발광다이오드(led) 장치, 기구 및 방법 |
US10043960B2 (en) * | 2011-11-15 | 2018-08-07 | Cree, Inc. | Light emitting diode (LED) packages and related methods |
JP2013118292A (ja) | 2011-12-02 | 2013-06-13 | Citizen Electronics Co Ltd | Led発光装置 |
US9496466B2 (en) | 2011-12-06 | 2016-11-15 | Cree, Inc. | Light emitter devices and methods, utilizing light emitting diodes (LEDs), for improved light extraction |
US9806246B2 (en) | 2012-02-07 | 2017-10-31 | Cree, Inc. | Ceramic-based light emitting diode (LED) devices, components, and methods |
US9786825B2 (en) | 2012-02-07 | 2017-10-10 | Cree, Inc. | Ceramic-based light emitting diode (LED) devices, components, and methods |
US9240530B2 (en) | 2012-02-13 | 2016-01-19 | Cree, Inc. | Light emitter devices having improved chemical and physical resistance and related methods |
US9343441B2 (en) | 2012-02-13 | 2016-05-17 | Cree, Inc. | Light emitter devices having improved light output and related methods |
US20130242538A1 (en) * | 2012-03-13 | 2013-09-19 | Shenzhen China Star Optoelectronics Technology Co Ltd. | Led light bar and backlight module |
US9735198B2 (en) | 2012-03-30 | 2017-08-15 | Cree, Inc. | Substrate based light emitter devices, components, and related methods |
US9538590B2 (en) | 2012-03-30 | 2017-01-03 | Cree, Inc. | Solid state lighting apparatuses, systems, and related methods |
JP6024957B2 (ja) * | 2012-09-24 | 2016-11-16 | 東芝ライテック株式会社 | 発光装置および照明装置 |
US9345091B2 (en) | 2013-02-08 | 2016-05-17 | Cree, Inc. | Light emitting device (LED) light fixture control systems and related methods |
US10094523B2 (en) * | 2013-04-19 | 2018-10-09 | Cree, Inc. | LED assembly |
USD739565S1 (en) | 2013-06-27 | 2015-09-22 | Cree, Inc. | Light emitter unit |
USD740453S1 (en) | 2013-06-27 | 2015-10-06 | Cree, Inc. | Light emitter unit |
USD771579S1 (en) * | 2014-05-26 | 2016-11-15 | Citizens Electronics Co., Ltd. | Light emitting diode |
JP1524801S (ja) * | 2014-05-26 | 2015-06-01 | ||
TWI556478B (zh) * | 2014-06-30 | 2016-11-01 | 億光電子工業股份有限公司 | 發光二極體裝置 |
US10453825B2 (en) * | 2014-11-11 | 2019-10-22 | Cree, Inc. | Light emitting diode (LED) components and methods |
JP6256699B2 (ja) * | 2014-11-11 | 2018-01-10 | 豊田合成株式会社 | 発光装置 |
US9826581B2 (en) | 2014-12-05 | 2017-11-21 | Cree, Inc. | Voltage configurable solid state lighting apparatuses, systems, and related methods |
USD786809S1 (en) | 2015-05-20 | 2017-05-16 | Citizen Electronics Co., Ltd. | Light emitting diode |
JP1545462S (ja) * | 2015-05-20 | 2016-03-14 | ||
DE112016003002T5 (de) | 2015-06-30 | 2018-03-15 | Cree, Inc. | Stabilisierte Quantenpunktstruktur und Verfahren zur Herstellung einer stabilisierten Quantenpunktstruktur |
JP6610866B2 (ja) | 2015-08-31 | 2019-11-27 | パナソニックIpマネジメント株式会社 | 発光装置、及び照明装置 |
JP6633881B2 (ja) * | 2015-09-30 | 2020-01-22 | ローム株式会社 | Led照明器具およびその製造方法 |
JP6788860B2 (ja) * | 2016-08-23 | 2020-11-25 | パナソニックIpマネジメント株式会社 | 発光装置、及び照明装置 |
USD823492S1 (en) | 2016-10-04 | 2018-07-17 | Cree, Inc. | Light emitting device |
US10804251B2 (en) | 2016-11-22 | 2020-10-13 | Cree, Inc. | Light emitting diode (LED) devices, components and methods |
USD831591S1 (en) * | 2017-01-20 | 2018-10-23 | Citizen Electronics Co., Ltd. | Light emitting diode |
USD847769S1 (en) * | 2017-01-31 | 2019-05-07 | Citizen Electronics Co., Ltd. | Light emitting diode |
US10260683B2 (en) | 2017-05-10 | 2019-04-16 | Cree, Inc. | Solid-state lamp with LED filaments having different CCT's |
US10347799B2 (en) | 2017-11-10 | 2019-07-09 | Cree, Inc. | Stabilized quantum dot composite and method of making a stabilized quantum dot composite |
US10741730B2 (en) | 2017-11-10 | 2020-08-11 | Cree, Inc. | Stabilized luminescent nanoparticles comprising a perovskite semiconductor and method of fabrication |
JP2019186505A (ja) * | 2018-04-17 | 2019-10-24 | パナソニックIpマネジメント株式会社 | 発光装置、照明装置、及び、シリコーン樹脂 |
US10608148B2 (en) | 2018-05-31 | 2020-03-31 | Cree, Inc. | Stabilized fluoride phosphor for light emitting diode (LED) applications |
USD905648S1 (en) * | 2019-04-24 | 2020-12-22 | Patrick Art Ivs | LCD display |
US11083059B2 (en) | 2019-10-03 | 2021-08-03 | Creeled, Inc. | Lumiphoric arrangements for light emitting diode packages |
CN111433920B (zh) * | 2019-11-15 | 2022-09-06 | 厦门三安光电有限公司 | 一种发光二极管及其制作方法 |
CN112151519A (zh) * | 2020-10-23 | 2020-12-29 | 开发晶照明(厦门)有限公司 | 板上芯片型光电器件 |
JP1695392S (ja) * | 2020-12-02 | 2021-09-21 | ||
USD1000400S1 (en) * | 2021-04-16 | 2023-10-03 | Creeled, Inc. | Light emitting diode package |
Family Cites Families (195)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US34861A (en) | 1862-04-01 | Improved washing-machine | ||
US4855194A (en) | 1988-02-05 | 1989-08-08 | The United States Of America As Represented By The United States Department Of Energy | Fuel cell having electrolyte inventory control volume |
US4866005A (en) | 1987-10-26 | 1989-09-12 | North Carolina State University | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
US4946547A (en) | 1989-10-13 | 1990-08-07 | Cree Research, Inc. | Method of preparing silicon carbide surfaces for crystal growth |
US5210051A (en) | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
US5200022A (en) | 1990-10-03 | 1993-04-06 | Cree Research, Inc. | Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product |
JPH0738940Y2 (ja) | 1991-05-13 | 1995-09-06 | スタンレー電気株式会社 | Led表示灯 |
JP3231903B2 (ja) | 1993-07-22 | 2001-11-26 | 日本電信電話株式会社 | チャネル割り当て方式 |
US5393993A (en) | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
US5523589A (en) | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
CN2229178Y (zh) | 1995-06-27 | 1996-06-19 | 王德明 | 多用桌 |
CN2229677Y (zh) | 1995-06-28 | 1996-06-19 | 简俊弘 | 改良的电脑壳体 |
JPH10247748A (ja) * | 1997-03-03 | 1998-09-14 | Omron Corp | 発光素子及び当該発光素子を用いた面光源装置 |
JPH10311937A (ja) | 1997-05-14 | 1998-11-24 | Japan Aviation Electron Ind Ltd | 端面発光素子或は受光素子の実装構造 |
JP3862870B2 (ja) | 1997-09-25 | 2006-12-27 | 北陸電気工業株式会社 | 半田レスの端子金具を備えた電気部品 |
JP2000251977A (ja) | 1999-02-26 | 2000-09-14 | Fujitsu Ltd | 電源供給端子 |
US6442832B1 (en) | 1999-04-26 | 2002-09-03 | Agilent Technologies, Inc. | Method for coupling a circuit board to a transmission line that includes a heat sensitive dielectric |
US6548832B1 (en) | 1999-06-09 | 2003-04-15 | Sanyo Electric Co., Ltd. | Hybrid integrated circuit device |
DE10016817A1 (de) | 2000-04-05 | 2001-10-18 | Mannesmann Vdo Ag | Farb-Head-up Display, insbesondere für ein Fahrzeug |
JP2001294083A (ja) | 2000-04-14 | 2001-10-23 | Yazaki Corp | 車両の室内照明装置 |
CN2432021Y (zh) | 2000-07-21 | 2001-05-30 | 刘勇 | 新型服装裁剪剪刀 |
US6547249B2 (en) | 2001-03-29 | 2003-04-15 | Lumileds Lighting U.S., Llc | Monolithic series/parallel led arrays formed on highly resistive substrates |
DE50209685D1 (de) | 2001-09-13 | 2007-04-19 | Lucea Ag | Leuchtdioden-leuchtpaneel und leiterplatte |
JP2003303504A (ja) * | 2002-04-10 | 2003-10-24 | Meiji Natl Ind Co Ltd | 発光ダイオードを用いた照明器具 |
US7224000B2 (en) | 2002-08-30 | 2007-05-29 | Lumination, Llc | Light emitting diode component |
US7244965B2 (en) | 2002-09-04 | 2007-07-17 | Cree Inc, | Power surface mount light emitting die package |
JP2004265986A (ja) | 2003-02-28 | 2004-09-24 | Citizen Electronics Co Ltd | 高輝度発光素子及びそれを用いた発光装置及び高輝度発光素子の製造方法 |
JP2004311101A (ja) | 2003-04-03 | 2004-11-04 | Koito Mfg Co Ltd | 車両用前照灯及び半導体発光素子 |
WO2005018008A1 (ja) | 2003-08-19 | 2005-02-24 | Nichia Corporation | 半導体素子 |
US20050152145A1 (en) | 2003-08-28 | 2005-07-14 | Currie Robert M. | Vehicle lighting system having an electronic module circuit and light emitting diodes |
KR100541395B1 (ko) | 2003-09-09 | 2006-01-11 | 삼성전자주식회사 | 반도체칩 적층장치, 이것을 이용한 반도체 패키지의제조방법, 그리고 이러한 방법에 의하여 제조된 반도체패키지 |
US6982518B2 (en) * | 2003-10-01 | 2006-01-03 | Enertron, Inc. | Methods and apparatus for an LED light |
CN100472823C (zh) | 2003-10-15 | 2009-03-25 | 日亚化学工业株式会社 | 发光装置 |
JP2005183148A (ja) * | 2003-12-18 | 2005-07-07 | Tsubakimoto Chain Co | 照明装置及び仕分けシステム |
US20050199899A1 (en) | 2004-03-11 | 2005-09-15 | Ming-Der Lin | Package array and package unit of flip chip LED |
JP2005266117A (ja) | 2004-03-17 | 2005-09-29 | Rohm Co Ltd | 平面ディスプレイ |
JP2005276979A (ja) * | 2004-03-24 | 2005-10-06 | Matsushita Electric Ind Co Ltd | Led光源 |
US7791061B2 (en) | 2004-05-18 | 2010-09-07 | Cree, Inc. | External extraction light emitting diode based upon crystallographic faceted surfaces |
US7683391B2 (en) | 2004-05-26 | 2010-03-23 | Lockheed Martin Corporation | UV emitting LED having mesa structure |
KR101095637B1 (ko) | 2004-09-23 | 2011-12-19 | 삼성전자주식회사 | 광 발생 장치, 이를 갖는 백라이트 어셈블리 및 백라이트어셈블리를 갖는 표시장치 |
DE102004047260B4 (de) | 2004-09-24 | 2006-08-03 | Siemens Ag | Isolierstoffgehäuse mit Belüftungsschacht |
USD528996S1 (en) | 2004-10-14 | 2006-09-26 | Toshiba Lighting & Technology Corporation | Light emitting diode module |
KR101154801B1 (ko) | 2004-12-03 | 2012-07-03 | 엔지케이 스파크 플러그 캄파니 리미티드 | 세라믹 기판 및 발광 소자 수납용 세라믹 패키지 |
US7352440B2 (en) | 2004-12-10 | 2008-04-01 | Asml Netherlands B.V. | Substrate placement in immersion lithography |
US20060139595A1 (en) | 2004-12-27 | 2006-06-29 | Asml Netherlands B.V. | Lithographic apparatus and method for determining Z position errors/variations and substrate table flatness |
US7821023B2 (en) | 2005-01-10 | 2010-10-26 | Cree, Inc. | Solid state lighting component |
US7939842B2 (en) | 2005-01-27 | 2011-05-10 | Cree, Inc. | Light emitting device packages, light emitting diode (LED) packages and related methods |
USD528672S1 (en) | 2005-01-28 | 2006-09-19 | Matsushita Electric Industrial Co., Ltd. | LED module |
KR100663906B1 (ko) | 2005-03-14 | 2007-01-02 | 서울반도체 주식회사 | 발광 장치 |
JP2006294898A (ja) | 2005-04-12 | 2006-10-26 | Sumitomo Metal Electronics Devices Inc | 発光素子収納用パッケージ |
USD535262S1 (en) | 2005-06-08 | 2007-01-16 | Matsushita Electric Industrial Co., Ltd. | Light emitting diode module |
US7365371B2 (en) | 2005-08-04 | 2008-04-29 | Cree, Inc. | Packages for semiconductor light emitting devices utilizing dispensed encapsulants |
WO2007018360A1 (en) | 2005-08-09 | 2007-02-15 | Seoul Opto Device Co., Ltd. | Ac light emitting diode and method for fabricating the same |
US8563339B2 (en) | 2005-08-25 | 2013-10-22 | Cree, Inc. | System for and method for closed loop electrophoretic deposition of phosphor materials on semiconductor devices |
US7550319B2 (en) | 2005-09-01 | 2009-06-23 | E. I. Du Pont De Nemours And Company | Low temperature co-fired ceramic (LTCC) tape compositions, light emitting diode (LED) modules, lighting devices and method of forming thereof |
US7479660B2 (en) | 2005-10-21 | 2009-01-20 | Perkinelmer Elcos Gmbh | Multichip on-board LED illumination device |
US7213940B1 (en) | 2005-12-21 | 2007-05-08 | Led Lighting Fixtures, Inc. | Lighting device and lighting method |
JP4049186B2 (ja) | 2006-01-26 | 2008-02-20 | ソニー株式会社 | 光源装置 |
KR100819883B1 (ko) | 2006-02-17 | 2008-04-07 | 삼성전자주식회사 | 발광소자 패키지 및 그 제조방법 |
JP5027427B2 (ja) | 2006-02-23 | 2012-09-19 | パナソニック株式会社 | 発光ダイオードを用いた白色照明装置 |
KR100793338B1 (ko) | 2006-02-23 | 2008-01-11 | 삼성전기주식회사 | 발광 다이오드 모듈 |
JP4992250B2 (ja) | 2006-03-01 | 2012-08-08 | 日亜化学工業株式会社 | 発光装置 |
KR100738933B1 (ko) | 2006-03-17 | 2007-07-12 | (주)대신엘이디 | 조명용 led 모듈 |
JP4789672B2 (ja) | 2006-03-29 | 2011-10-12 | 京セラ株式会社 | 発光装置および照明装置 |
CN2917018Y (zh) | 2006-04-10 | 2007-06-27 | 富士康(昆山)电脑接插件有限公司 | 线缆连接器组件 |
TWI301679B (en) | 2006-04-14 | 2008-10-01 | High Power Optoelectronics Inc | Semiconductor light emitting device and method of fabricating the same |
BRPI0711255A2 (pt) * | 2006-04-18 | 2011-08-30 | Cree Led Lighting Solutions | dispositivo de iluminação e método de iluminação |
JP2009534866A (ja) | 2006-04-24 | 2009-09-24 | クリー, インコーポレイティッド | 横向き平面実装白色led |
US7655957B2 (en) | 2006-04-27 | 2010-02-02 | Cree, Inc. | Submounts for semiconductor light emitting device packages and semiconductor light emitting device packages including the same |
JP4605096B2 (ja) | 2006-05-30 | 2011-01-05 | ソニー株式会社 | バックライト装置及びカラー画像表示装置 |
JP2007335371A (ja) | 2006-06-19 | 2007-12-27 | Harison Toshiba Lighting Corp | 面照明装置 |
USD570506S1 (en) | 2006-06-20 | 2008-06-03 | Matsushita Electric Industrial Co., Ltd. | Lighting apparatus |
US8044418B2 (en) | 2006-07-13 | 2011-10-25 | Cree, Inc. | Leadframe-based packages for solid state light emitting devices |
USD570797S1 (en) | 2006-07-14 | 2008-06-10 | Samsung Electro-Mechanics Co., Ltd. | Light-emitting diode |
USD593043S1 (en) | 2006-07-14 | 2009-05-26 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode |
US20080019130A1 (en) | 2006-07-24 | 2008-01-24 | Pei-Choa Wang | Arrangement of Light-Emitting Diodes Of LED Lamp |
US7804147B2 (en) | 2006-07-31 | 2010-09-28 | Cree, Inc. | Light emitting diode package element with internal meniscus for bubble free lens placement |
US7943952B2 (en) | 2006-07-31 | 2011-05-17 | Cree, Inc. | Method of uniform phosphor chip coating and LED package fabricated using method |
KR100793581B1 (ko) | 2006-08-29 | 2008-01-14 | 엘지이노텍 주식회사 | 백라이트 유닛 및 이를 이용한 디스플레이 장치 |
US8425271B2 (en) | 2006-09-01 | 2013-04-23 | Cree, Inc. | Phosphor position in light emitting diodes |
US7910938B2 (en) | 2006-09-01 | 2011-03-22 | Cree, Inc. | Encapsulant profile for light emitting diodes |
US20080089072A1 (en) | 2006-10-11 | 2008-04-17 | Alti-Electronics Co., Ltd. | High Power Light Emitting Diode Package |
USD575246S1 (en) | 2006-11-15 | 2008-08-19 | Citizen Electronics Co., Ltd. | Light-emitting diode unit for illuminating an object |
US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US9159888B2 (en) | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
USD573553S1 (en) | 2007-02-09 | 2008-07-22 | Matsushita Electric Industrial Co., Ltd. | Light source of light-emitting diode |
KR20090124906A (ko) * | 2007-03-12 | 2009-12-03 | 니치아 카가쿠 고교 가부시키가이샤 | 고출력 발광 장치 및 그것에 이용하는 패키지 |
US7510400B2 (en) | 2007-03-14 | 2009-03-31 | Visteon Global Technologies, Inc. | LED interconnect spring clip assembly |
JP5089212B2 (ja) | 2007-03-23 | 2012-12-05 | シャープ株式会社 | 発光装置およびそれを用いたledランプ、発光装置の製造方法 |
US7656518B2 (en) | 2007-03-30 | 2010-02-02 | Asml Netherlands B.V. | Method of measuring asymmetry in a scatterometer, a method of measuring an overlay error in a substrate and a metrology apparatus |
US20080258130A1 (en) | 2007-04-23 | 2008-10-23 | Bergmann Michael J | Beveled LED Chip with Transparent Substrate |
USD576576S1 (en) | 2007-05-25 | 2008-09-09 | Matsushita Electric Industrial Co., Ltd. | Light source of light emitting diode |
US7614771B2 (en) | 2007-07-05 | 2009-11-10 | Tyco Electronics Corporation | Wireless controlled light emitting assembly |
US7621752B2 (en) | 2007-07-17 | 2009-11-24 | Visteon Global Technologies, Inc. | LED interconnection integrated connector holder package |
KR101283282B1 (ko) | 2007-07-25 | 2013-07-11 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 그 제조방법 |
TWI478271B (zh) | 2007-08-10 | 2015-03-21 | 尼康股份有限公司 | Substrate bonding device and substrate bonding method |
JP2009044055A (ja) | 2007-08-10 | 2009-02-26 | Toshiba Lighting & Technology Corp | Ledモジュールおよびled照明器具 |
FR2921537A1 (fr) | 2007-09-20 | 2009-03-27 | Stephane Jebabli | Structure lumineuse pour aquarium d'eau douce tropicale et d'eau de mer recifale |
US8866169B2 (en) | 2007-10-31 | 2014-10-21 | Cree, Inc. | LED package with increased feature sizes |
US7611376B2 (en) | 2007-11-20 | 2009-11-03 | Tyco Electronics Corporation | LED socket |
USD591248S1 (en) | 2007-12-05 | 2009-04-28 | Citizen Electronics Co., Ltd. | Light-emitting diode for illuminating an object |
USD607420S1 (en) | 2007-12-05 | 2010-01-05 | Citizen Electronics Co., Ltd. | Light-emitting diode for illuminating an object |
USD592615S1 (en) | 2007-12-05 | 2009-05-19 | Citizen Electronics Co., Ltd. | Light-emitting diode for illuminating an object |
CN101459211B (zh) | 2007-12-11 | 2011-03-02 | 富士迈半导体精密工业(上海)有限公司 | 固态发光器件 |
US8167674B2 (en) | 2007-12-14 | 2012-05-01 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
US8049237B2 (en) | 2007-12-28 | 2011-11-01 | Nichia Corporation | Light emitting device |
US8058088B2 (en) | 2008-01-15 | 2011-11-15 | Cree, Inc. | Phosphor coating systems and methods for light emitting structures and packaged light emitting diodes including phosphor coating |
US8940561B2 (en) | 2008-01-15 | 2015-01-27 | Cree, Inc. | Systems and methods for application of optical materials to optical elements |
USD589470S1 (en) | 2008-02-01 | 2009-03-31 | Neobulb Technologies, Inc. | Light-emitting module |
TWI360239B (en) | 2008-03-19 | 2012-03-11 | E Pin Optical Industry Co Ltd | Package structure for light emitting diode |
US7833045B2 (en) | 2008-03-24 | 2010-11-16 | Avx Corporation | Insulation displacement connector (IDC) |
US8324723B2 (en) | 2008-03-25 | 2012-12-04 | Bridge Semiconductor Corporation | Semiconductor chip assembly with bump/base heat spreader and dual-angle cavity in bump |
US8890186B2 (en) * | 2008-03-28 | 2014-11-18 | Panasonic Corporation | Molded resin product, semiconductor light-emitting source, lighting device, and method for manufacturing molded resin product |
TW200945570A (en) | 2008-04-18 | 2009-11-01 | Top Crystal Technology Inc | High-voltage LED circuit with multi-staged threshold voltage and diode light-emitting device thereof |
USD622876S1 (en) | 2008-04-25 | 2010-08-31 | Toshiba Lighting & Technology Corporation | Light emitting diode module |
WO2009133615A1 (ja) * | 2008-05-01 | 2009-11-05 | 株式会社グローバル・アイ | Ledを用いた照明器具 |
JP5390516B2 (ja) * | 2008-05-19 | 2014-01-15 | 株式会社東芝 | 線状白色光源ならびにそれを用いたバックライトおよび液晶表示装置 |
CA128592S (en) | 2008-05-20 | 2009-11-30 | Philips Electronics Ltd | Led module |
US7667169B2 (en) | 2008-05-22 | 2010-02-23 | Omnivision Technologies, Inc. | Image sensor with simultaneous auto-focus and image preview |
US8461613B2 (en) | 2008-05-27 | 2013-06-11 | Interlight Optotech Corporation | Light emitting device |
JP2009289918A (ja) | 2008-05-28 | 2009-12-10 | Alps Electric Co Ltd | 半導体発光装置 |
US9147812B2 (en) | 2008-06-24 | 2015-09-29 | Cree, Inc. | Methods of assembly for a semiconductor light emitting device package |
JP2010009972A (ja) | 2008-06-27 | 2010-01-14 | Toshiba Lighting & Technology Corp | 発光モジュール及び発光装置 |
US7859190B2 (en) | 2008-09-10 | 2010-12-28 | Bridgelux, Inc. | Phosphor layer arrangement for use with light emitting diodes |
US8022626B2 (en) | 2008-09-16 | 2011-09-20 | Osram Sylvania Inc. | Lighting module |
US8247827B2 (en) * | 2008-09-30 | 2012-08-21 | Bridgelux, Inc. | LED phosphor deposition |
USD603813S1 (en) | 2008-10-01 | 2009-11-10 | Toshiba Lighting & Technology Corporation | Light emitting diode module |
US20100096642A1 (en) | 2008-10-20 | 2010-04-22 | Brilliant Technology Co., Ltd. | Packaging struture for high power light emitting diode(led) chip |
US9425172B2 (en) * | 2008-10-24 | 2016-08-23 | Cree, Inc. | Light emitter array |
US7854365B2 (en) * | 2008-10-27 | 2010-12-21 | Asm Assembly Automation Ltd | Direct die attach utilizing heated bond head |
JP5379465B2 (ja) * | 2008-12-17 | 2013-12-25 | パナソニック株式会社 | 発光装置 |
JP2010199547A (ja) * | 2009-01-30 | 2010-09-09 | Nichia Corp | 発光装置及びその製造方法 |
JP5283539B2 (ja) * | 2009-03-03 | 2013-09-04 | シャープ株式会社 | 発光装置、発光装置ユニット、および発光装置製造方法 |
CN101865372A (zh) | 2009-04-20 | 2010-10-20 | 富准精密工业(深圳)有限公司 | 发光二极管灯具 |
US8957435B2 (en) | 2009-04-28 | 2015-02-17 | Cree, Inc. | Lighting device |
USD615051S1 (en) | 2009-05-05 | 2010-05-04 | Prolight Opto Technology Corporation | LED package |
JP2011009298A (ja) * | 2009-06-23 | 2011-01-13 | Citizen Electronics Co Ltd | 発光ダイオード光源装置 |
KR101061246B1 (ko) | 2009-07-08 | 2011-08-31 | 한성엘컴텍 주식회사 | 소켓 결합형의 led램프 |
JP5366688B2 (ja) | 2009-07-16 | 2013-12-11 | 日本航空電子工業株式会社 | ソケット、基板組立体及びそれを備える装置 |
JP2011071242A (ja) | 2009-09-24 | 2011-04-07 | Toshiba Lighting & Technology Corp | 発光装置及び照明装置 |
US9713211B2 (en) | 2009-09-24 | 2017-07-18 | Cree, Inc. | Solid state lighting apparatus with controllable bypass circuits and methods of operation thereof |
US8901829B2 (en) | 2009-09-24 | 2014-12-02 | Cree Led Lighting Solutions, Inc. | Solid state lighting apparatus with configurable shunts |
CN102032481B (zh) | 2009-09-25 | 2014-01-08 | 东芝照明技术株式会社 | 附带灯口的照明灯及照明器具 |
USD630171S1 (en) | 2009-10-16 | 2011-01-04 | Everlight Electronics Co., Ltd. | Light emitting diode |
CN102044602A (zh) | 2009-10-23 | 2011-05-04 | 亿光电子工业股份有限公司 | 发光二极管封装结构 |
USD615052S1 (en) | 2009-10-27 | 2010-05-04 | Citizen Electronics Co. Ltd. | Light-emitting diode |
US8337214B2 (en) | 2009-11-13 | 2012-12-25 | Cree, Inc. | Electrical connectors and light emitting device package and methods of assembling the same |
TWM379163U (en) | 2009-11-26 | 2010-04-21 | Truelight Corp | Packaging apparatus for high power and high orientation matrix semiconductor light-emitting devices |
TWM379717U (en) | 2009-11-26 | 2010-05-01 | Alliance Optotek Corp | Modular illuminating device |
KR101619832B1 (ko) | 2009-11-30 | 2016-05-13 | 삼성전자주식회사 | 발광다이오드 패키지, 이를 구비한 발광다이오드 패키지 모듈과 그 제조 방법, 및 이를 구비한 헤드 램프 모듈과 그 제어 방법 |
US7993025B2 (en) | 2009-12-01 | 2011-08-09 | Davinci Industrial Inc. | LED lamp |
US8241044B2 (en) | 2009-12-09 | 2012-08-14 | Tyco Electronics Corporation | LED socket assembly |
CN101876406A (zh) | 2009-12-14 | 2010-11-03 | 东莞市光宇新能源科技有限公司 | 一种大功率led灯的制作工艺 |
USD636899S1 (en) | 2010-01-28 | 2011-04-26 | Toshiba Lighting & Technology Corporation | Light emitting diode module |
US7955147B1 (en) | 2010-03-15 | 2011-06-07 | Zierick Manufacturing Corporation | Surface mount (SMT) crimp terminal and method of securing wire to same |
USD640997S1 (en) | 2010-04-01 | 2011-07-05 | Citizen Electronics Co., Ltd. | Light-emitting diode |
USD645417S1 (en) | 2010-04-01 | 2011-09-20 | Citizen Electronics Co., Ltd. | Light-emitting diode |
US8517572B2 (en) | 2010-05-06 | 2013-08-27 | Heathco, Llc | Method and apparatus pertaining to a cone-shaped lens in combination with a lateral member |
JP5846408B2 (ja) | 2010-05-26 | 2016-01-20 | 東芝ライテック株式会社 | 発光装置および照明装置 |
JP4676565B2 (ja) | 2010-06-08 | 2011-04-27 | シャープ株式会社 | 記録装置 |
USD658603S1 (en) | 2010-06-15 | 2012-05-01 | Toshiba Lighting & Technology Corporation | Light emitting diode module |
USD658601S1 (en) | 2010-06-15 | 2012-05-01 | Toshiba Lighting & Technology Corporation | Light emitting diode module |
USD658602S1 (en) | 2010-06-15 | 2012-05-01 | Toshiba Lighting & Technology Corporation | Light emitting diode module |
WO2012029360A1 (ja) * | 2010-08-30 | 2012-03-08 | シャープ株式会社 | 照明装置および表示装置 |
US8410679B2 (en) | 2010-09-21 | 2013-04-02 | Cree, Inc. | Semiconductor light emitting devices with densely packed phosphor layer at light emitting surface |
JP5612991B2 (ja) * | 2010-09-30 | 2014-10-22 | シャープ株式会社 | 発光装置及びこれを備えた照明装置 |
USD669041S1 (en) | 2010-10-05 | 2012-10-16 | Citizen Electronics Co., Ltd. | Light-emitting diode |
USD637564S1 (en) | 2010-10-19 | 2011-05-10 | Edison Opto Corporation | Light emitting diode |
USD707192S1 (en) | 2010-11-18 | 2014-06-17 | Cree, Inc. | Light emitting device |
USD721339S1 (en) | 2010-12-03 | 2015-01-20 | Cree, Inc. | Light emitter device |
US8564000B2 (en) | 2010-11-22 | 2013-10-22 | Cree, Inc. | Light emitting devices for light emitting diodes (LEDs) |
USD676000S1 (en) | 2010-11-22 | 2013-02-12 | Cree, Inc. | Light emitting device package |
USD712850S1 (en) | 2010-11-18 | 2014-09-09 | Cree, Inc. | Light emitter device |
US9300062B2 (en) * | 2010-11-22 | 2016-03-29 | Cree, Inc. | Attachment devices and methods for light emitting devices |
US9000470B2 (en) | 2010-11-22 | 2015-04-07 | Cree, Inc. | Light emitter devices |
US9490235B2 (en) | 2010-11-22 | 2016-11-08 | Cree, Inc. | Light emitting devices, systems, and methods |
US8624271B2 (en) | 2010-11-22 | 2014-01-07 | Cree, Inc. | Light emitting devices |
USD650760S1 (en) | 2010-11-22 | 2011-12-20 | Cree, Inc. | Light emitting device package |
US8575639B2 (en) | 2011-02-16 | 2013-11-05 | Cree, Inc. | Light emitting devices for light emitting diodes (LEDs) |
USD706231S1 (en) | 2010-12-03 | 2014-06-03 | Cree, Inc. | Light emitting device |
USD683708S1 (en) | 2010-12-09 | 2013-06-04 | Nichia Corporation | Light emitting diode |
US8354684B2 (en) | 2011-01-09 | 2013-01-15 | Bridgelux, Inc. | Packaging photon building blocks having only top side connections in an interconnect structure |
USD702653S1 (en) | 2011-10-26 | 2014-04-15 | Cree, Inc. | Light emitting device component |
US8455908B2 (en) | 2011-02-16 | 2013-06-04 | Cree, Inc. | Light emitting devices |
US8809880B2 (en) | 2011-02-16 | 2014-08-19 | Cree, Inc. | Light emitting diode (LED) chips and devices for providing failure mitigation in LED arrays |
US8272766B2 (en) | 2011-03-18 | 2012-09-25 | Abl Ip Holding Llc | Semiconductor lamp with thermal handling system |
EP2503214B1 (en) | 2011-03-24 | 2016-05-18 | OSRAM GmbH | Mounting structure for solid-state light sources |
US20130058099A1 (en) | 2011-09-02 | 2013-03-07 | Soraa, Inc. | High Intensity Light Source with Interchangeable Optics |
USD705181S1 (en) | 2011-10-26 | 2014-05-20 | Cree, Inc. | Light emitting device component |
KR20140097284A (ko) | 2011-11-07 | 2014-08-06 | 크리,인코포레이티드 | 고전압 어레이 발광다이오드(led) 장치, 기구 및 방법 |
USD689451S1 (en) | 2012-01-24 | 2013-09-10 | Toyoda Gosei Co., Ltd. | Light emitting diode |
US9343441B2 (en) | 2012-02-13 | 2016-05-17 | Cree, Inc. | Light emitter devices having improved light output and related methods |
CN104115291A (zh) | 2012-02-13 | 2014-10-22 | 克利公司 | 改进的发光设备和方法 |
US9240530B2 (en) | 2012-02-13 | 2016-01-19 | Cree, Inc. | Light emitter devices having improved chemical and physical resistance and related methods |
US9735198B2 (en) | 2012-03-30 | 2017-08-15 | Cree, Inc. | Substrate based light emitter devices, components, and related methods |
-
2011
- 2011-05-10 US US13/104,558 patent/US8624271B2/en active Active
- 2011-10-31 WO PCT/US2011/058603 patent/WO2012071139A2/en active Application Filing
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- 2011-10-31 CN CN201180065495.0A patent/CN103329290B/zh active Active
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2014
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10134961B2 (en) | 2012-03-30 | 2018-11-20 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
Also Published As
Publication number | Publication date |
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CN103329290B (zh) | 2017-09-29 |
US9209354B2 (en) | 2015-12-08 |
US20120126257A1 (en) | 2012-05-24 |
US8624271B2 (en) | 2014-01-07 |
CN103329290A (zh) | 2013-09-25 |
TWI481072B (zh) | 2015-04-11 |
TW201232813A (en) | 2012-08-01 |
JP2014505994A (ja) | 2014-03-06 |
WO2012071139A2 (en) | 2012-05-31 |
EP2643861A2 (en) | 2013-10-02 |
US20140183577A1 (en) | 2014-07-03 |
WO2012071139A3 (en) | 2012-07-12 |
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