CN101459211B - 固态发光器件 - Google Patents

固态发光器件 Download PDF

Info

Publication number
CN101459211B
CN101459211B CN2007102029837A CN200710202983A CN101459211B CN 101459211 B CN101459211 B CN 101459211B CN 2007102029837 A CN2007102029837 A CN 2007102029837A CN 200710202983 A CN200710202983 A CN 200710202983A CN 101459211 B CN101459211 B CN 101459211B
Authority
CN
China
Prior art keywords
solid
emitting element
state light
light emitting
loading end
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007102029837A
Other languages
English (en)
Other versions
CN101459211A (zh
Inventor
王君伟
徐弘光
江文章
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Foxsemicon Integrated Technology Shanghai Inc
Foxsemicon Integrated Technology Inc
Original Assignee
Foxsemicon Integrated Technology Shanghai Inc
Foxsemicon Integrated Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Foxsemicon Integrated Technology Shanghai Inc, Foxsemicon Integrated Technology Inc filed Critical Foxsemicon Integrated Technology Shanghai Inc
Priority to CN2007102029837A priority Critical patent/CN101459211B/zh
Priority to US12/202,555 priority patent/US7994518B2/en
Priority to EP08253440A priority patent/EP2071637A2/en
Publication of CN101459211A publication Critical patent/CN101459211A/zh
Application granted granted Critical
Publication of CN101459211B publication Critical patent/CN101459211B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

Abstract

本发明涉及一种固态发光器件，其包括硅封装基板、多个电极、固态发光元件、反射层以及具聚光功能的透明封装体；硅封装基板具有一个承载面，所述多个电极贯穿所述承载面，所述固态发光元件设置在承载面上且与所述多个电极形成电连接；反射层包括一个第一反射部以及一个第二反射部，第一反射部与第二反射部共面设置在承载面上；透明封装体设置在承载面上且覆盖住所述固态发光元件及第一反射部，第二反射部暴露在透明封装体的外部。所述固态发光器件经由在硅封装基板上不设置碗杯结构，并采用具聚光功能的透明封装体来该其整体出光角度以达到预定要求，从而可克服现有技术中因采用碗杯结构而导致的出光效率不佳之缺陷。

Description

固态发光器件
技术领域
本发明涉及光学领域，尤其是一种固态发光器件。
背景技术
发光二极管(LED)为一种固态发光器件，因具功耗低、寿命长、体积小及亮度高等特性而被广泛用作LCD显示器背光源、车用光源及通用照明光源，具体可参见Atsushi Okuno等人在2003IEEE Electronic Components andTechnology Conference上发表的“Unique White LED Packaging Systems”一文。
现有的一种发光二极管包括硅封装基板、发光二极管芯片、多个电极、以及封装树脂。所述硅封装基板上设置有碗杯结构，所述发光二极管芯片设置在所述碗杯结构内。所述多个电极贯穿所述硅封装基板的碗杯结构之底部并与所述发光二极管芯片形成电连接。所述封装树脂充填在所述碗杯结构内且完全覆盖住所述发光二极管芯片。其中，碗杯结构的设置虽然可以缩小整个发光二极管的出光角度，但是其出光效率也会因为所述发光二极管芯片发出的光在碗杯结构内全反射而降低。有鉴于此，有必要提供一种具较佳出光效率的发光二极管。
发明内容
下面将以实施例说明一种出光效率佳的固态发光器件，例如发光二极管。
一种固态发光器件，其包括：一个硅封装基板、多个电极、一个固态发光元件、一个反射层以及一个具聚光功能的透明封装体；硅封装基板具有一个承载面，所述多个电极贯穿所述承载面，所述固态发光元件设置在承载面上且与所述多个电极形成电连接；反射层用以反射所述固态发光元件受激产生的光，其包括一个第一反射部以及一个第二反射部，第一反射部与第二反射部共面设置在承载面上；透明封装体设置在承载面上且覆盖住所述固态发光元件及第一反射部，第二反射部暴露在透明封装体的外部，其中，所述第一反射部位于所述承载面与固态发光元件之间；或者，所述第一反射部的对应所述固态发光元件的位置设置有开口，所述固态发光元件位于所述开口内且所述第一反射部环绕所述固态发光元件。
相对于现有技术，所述固态发光器件经由在硅封装基板上不设置碗杯结构，并采用具聚光功能的透明封装体来改变固态发光器件的整体出光角度以达到预定要求；从而可克服现有技术中因采用碗杯结构而导致的出光效率不佳之缺陷。
附图说明
图1是本发明第一实施例提供的固态发光器件的截面示意图。
图2与图1基本相同，不同之处在于其示出的反射层之第一反射部是环绕固态发光元件设置。
图3与图1基本相同，不同之处在于其示出的具聚光功能的透明封装体之形状不同。
图4是本发明第二实施例提供的固态发光器件的截面示意图。
图5与图4基本相同，不同之处主要在于其示出的埋入孔位于具聚光功能的透明封装体之覆盖范围内。
具体实施方式
下面将结合附图对本发明实施例作进一步的详细说明。
参见图1，本发明第一实施例提供的固态发光器件100，其包括：一个硅封装基板110、多个电极130、一个固态发光元件150、一个反射层170以及一个具聚光功能的透明封装体190a。
硅封装基板110具有一个承载面112，承载面112可为一平面。由于硅材料具有较好的热传导性及较佳的可靠度，因此较适合用作固态发光器件100中的封装基板。
多个电极130贯穿硅封装基板110的承载面112，其材料可选用金属，例如银、铜、铝等。具体的，所述多个电极130可贯穿整个硅封装基板110，从而其两端部分别暴露在硅封装基板110的两侧。所述多个电极130可分别具有一L型横截面。
固态发光元件150设置在承载面112上且与多个电极130形成电连接。其中，固态发光元件150可一个或多个发光二极管芯片的组合，其可经由打线(wiring bonding)方式与多个电极130形成电连接。进一步的，发光二极管芯片可选用红光、绿、蓝、或紫外光发光二极管芯片。
反射层170设置在硅封装基板110的承载面112上，用以反射固态发光元件150受激产生的光以减少因硅封装基板110吸光而导致的光损耗，进而提升固态发光器件100的出光效率。具体的，反射层170包括一个第一反射部172a及一个第二反射部174；第一反射部172a与第二反射部174共面(coplanar)设置在承载面112上，且第一反射部172a设置在固态发光元件150与硅封装基板110的承载面112之间。其中，固态发光元件150可经由银胶等导热性能较好的粘性材料粘著在第一反射部172a上。第一反射部172a与第二反射部174的材料可为金属或白色物质。其中，金属可为银、铝、铜等，白色物质可为陶瓷粉、二氧化钛(TiO2)等。另外，可以理解的是，反射层170并不限于如图1所示之与所述多个电极130均不导通，其也可仅与所述多个电极130的其中之一不导通。
此外，反射层170的第一反射部172a并不限于如图1所示之位于固态发光元件150及承载面112之间的情形；如图2所示，其还可在对应固态发光元件150的位置设置一开口(图2中未标示)，从而固态发光元件150可经由银胶等导热性能较好的粘性材料直接粘著在承载面112上；而第一反射部172b则环绕所述固态发光元件150。在此情形下，第一反射部172b的厚度可设置为小于固态发光元件150沿承载面112的一法向量方向之高度。
所述具聚光功能的透明封装体190a设置在硅封装基板110的承载面112上且覆盖住固态发光元件150及反射层170的第一反射部172a。反射层170的第二反射部174则暴露在透明封装体190a的外部。所述透明封装体190a的材料折射率可设置为大于1.4，其材料可为硅胶、环氧树脂、聚碳酸酯(Polycarbonate，PC)、压克力(Polymethyl methacrylate，PMMA)等透明物质。所述透明封装体190a因具有聚光功能而可改变固态发光器件100的出光角度，以防止出射光线过度分散而导致的亮度降低。如图1所示，透明封装体190a为半球形透镜，其外表面为一沿远离固态发光元件150的方向向外凸设的弧面。可以理解的是，透明封装体190a并不限于半球形透镜，其还可为其他合适形状的透镜，只要其可改变固态发光器件100的出光角度以达到预定要求均可。例如，如图3所示，透明封装体190b为一锥形透镜，其远离固态发光元件150的一表面为非球面。
参见图4，本发明第二实施例提供的固态发光器件200与第一实施例提供的固态发光器件100基本相同，其包括：多个电极130、一个固态发光元件150、一个反射层170以及一个具聚光功能的透明封装体190a。不同之处在于：其硅封装基板210的承载面212上向内开设有一埋入孔214；埋入孔214暴露在透明封装体190a的外部，其内收容有一个辅助元件，例如保护元件220。所述保护元件220与固态发光元件150并联，其可为稽纳二极管(Zener Diode)、肖特基二极管(Schottky Barrier Diode)、硅基二极管、晶体管或静电保护集成电路。由于保护元件220收容在埋入孔214内且位于透明封装体150的外部，其将不会遮挡固态发光元件150受激产生的光，有利于整个固态发光元件200的出光效率之提升。
另外，可以理解的是，所述保护元件220也可根据实际应用中的需要变更为其他辅助元件，例如图5所示的光感测器320。为使光感测器320能更精准地量测固态发光器件200的光强度或亮度等光学特性，所述埋入孔214则设置在透明封装体190a的覆盖区域内，从而可克服因空气与透明封装体190a之间的折射率不匹配而导致的量测精度不佳之问题。
此外，本发明第一及第二实施例中的反射层170可替换一荧光粉层，所述荧光粉层包括一个第一部分及一个第二部分，第一部分与第二部分共面设置在硅封装基板110或220的承载面112或212上。所述第一部分由透明封装体190a或190b覆盖住且位于固态发光元件150与承载面112或212之间，所述第二部分暴露在透明封装体190a或190b的外部。所述荧光粉层可经由印刷、喷墨或镀膜等方式形成。所述荧光粉层作为一种波长转换层，其可吸收固态发光元件150受激产生且入射至硅封装基板110或210的承载面112或212的光线，并产生另一种波长的光线且该另一种波长的光线之传播方向是任意的。因此，荧光粉层的设置也可提升固态发光器件100或200的出光效率。
另外，本领域技术人员还可于本发明精神内做其它变化，如变更固态发光元件的种类、透明封装体的形状、辅助元件的种类等以用于本发明等设计，只要其不偏离本发明的技术效果均可。这些依据本发明精神所做的变化，都应包含在本发明所要求保护的范围之内。

Claims (10)

1.一种固态发光器件，其包括：
一个硅封装基板，其具有一个承载面；
多个电极，其贯穿所述承载面；
一个固态发光元件，设置在所述承载面上且与所述多个电极形成电连接；
一个反射层，用以反射所述固态发光元件受激产生的光，所述反射层包括一个第一反射部以及一个第二反射部，所述第一反射部与第二反射部共面设置在所述承载面上；
一具聚光功能的透明封装体，其设置在所述承载面上且覆盖住所述固态发光元件及所述第一反射部，所述第二反射部暴露在所述透明封装体的外部；其中，所述第一反射部位于所述承载面与固态发光元件之间；或者，所述第一反射部的对应所述固态发光元件的位置设置有开口，所述固态发光元件位于所述开口内且所述第一反射部环绕所述固态发光元件。
2.如权利要求1所述的固态发光器件，其特征在于所述第一反射部与第二反射部的材料为金属或白色物质。
3.如权利要求1所述的固态发光器件，其特征在于所述第一反射部与第二反射部与所述多个电极均不导通。
4.如权利要求1所述的固态发光器件，其特征在于所述透明封装体为球形透镜或锥形透镜。
5.如权利要求1所述的固态发光器件，其特征在于所述透明封装体的材料折射率大于1.4。
6.如权利要求1所述的固态发光器件，其特征在于所述固态发光元件为一个发光二极管芯片或多个发光二极管芯片的组合。
7.如权利要求1所述的固态发光元件，其还包括一个辅助元件，所述硅封装基底的承载面向内开设有埋入孔，所述辅助元件容置在所述埋入孔内。
8.一种固态发光器件，其包括：
一个硅封装基板，其具有一个承载面；
多个电极，其贯穿所述承载面；
一个固态发光元件，设置在所述承载面上且与所述多个电极形成电连接；
一个波长转换层，其包括一个第一部分以及一个第二部分，所述第一部分与第二部分共面设置在所述承载面上且所述第一部分位于所述承载面与固态发光元件之间；
一具聚光功能的透明封装体，其设置在所述承载面上且覆盖住所述固态发光元件及所述波长转换层的第一部分，所述波长转换层的第二部分暴露在所述透明封装体的外部。
9.如权利要求8所述的固态发光器件，其特征在于所述透明封装体为球形透镜或锥形透镜。
10.如权利要求8所述的固态发光元件，其还包括一个辅助元件，所述硅封装基底的承载面向内开设有埋入孔，所述辅助元件容置在所述埋入孔内。
CN2007102029837A 2007-12-11 2007-12-11 固态发光器件 Expired - Fee Related CN101459211B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2007102029837A CN101459211B (zh) 2007-12-11 2007-12-11 固态发光器件
US12/202,555 US7994518B2 (en) 2007-12-11 2008-09-02 Light-emitting diode
EP08253440A EP2071637A2 (en) 2007-12-11 2008-10-22 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2007102029837A CN101459211B (zh) 2007-12-11 2007-12-11 固态发光器件

Publications (2)

Publication Number Publication Date
CN101459211A CN101459211A (zh) 2009-06-17
CN101459211B true CN101459211B (zh) 2011-03-02

Family

ID=40329088

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007102029837A Expired - Fee Related CN101459211B (zh) 2007-12-11 2007-12-11 固态发光器件

Country Status (3)

Country Link
US (1) US7994518B2 (zh)
EP (1) EP2071637A2 (zh)
CN (1) CN101459211B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103000785A (zh) * 2012-11-05 2013-03-27 何忠亮 一种led发光结构及其制作方法

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI426206B (zh) * 2008-12-25 2014-02-11 Au Optronics Corp 發光二極體裝置
KR101064026B1 (ko) * 2009-02-17 2011-09-08 엘지이노텍 주식회사 발광 디바이스 패키지 및 그 제조방법
JP5343831B2 (ja) 2009-04-16 2013-11-13 日亜化学工業株式会社 発光装置
US8474997B2 (en) * 2010-04-07 2013-07-02 Appotronics Corporation Limited High brightness illumination device using double-sided excitation of wavelength conversion materials
TWI472067B (zh) * 2010-04-28 2015-02-01 Lg Innotek Co Ltd 光學封裝及其製造方法
KR101130137B1 (ko) * 2010-07-02 2012-03-28 연세대학교 산학협력단 발광다이오드 모듈
TWI478319B (zh) * 2010-07-20 2015-03-21 Epistar Corp 整合式發光裝置及其製造方法
US8564000B2 (en) 2010-11-22 2013-10-22 Cree, Inc. Light emitting devices for light emitting diodes (LEDs)
USD707192S1 (en) 2010-11-18 2014-06-17 Cree, Inc. Light emitting device
USD712850S1 (en) 2010-11-18 2014-09-09 Cree, Inc. Light emitter device
USD721339S1 (en) 2010-12-03 2015-01-20 Cree, Inc. Light emitter device
CN102468406B (zh) * 2010-11-19 2014-11-05 展晶科技(深圳)有限公司 发光二极管封装结构及其制造方法
US9000470B2 (en) 2010-11-22 2015-04-07 Cree, Inc. Light emitter devices
US8575639B2 (en) 2011-02-16 2013-11-05 Cree, Inc. Light emitting devices for light emitting diodes (LEDs)
US9490235B2 (en) 2010-11-22 2016-11-08 Cree, Inc. Light emitting devices, systems, and methods
US8624271B2 (en) 2010-11-22 2014-01-07 Cree, Inc. Light emitting devices
US9300062B2 (en) 2010-11-22 2016-03-29 Cree, Inc. Attachment devices and methods for light emitting devices
CN102479909B (zh) * 2010-11-24 2014-12-10 展晶科技(深圳)有限公司 发光二极管
USD706231S1 (en) 2010-12-03 2014-06-03 Cree, Inc. Light emitting device
US8729589B2 (en) 2011-02-16 2014-05-20 Cree, Inc. High voltage array light emitting diode (LED) devices and fixtures
USD702653S1 (en) 2011-10-26 2014-04-15 Cree, Inc. Light emitting device component
US8809880B2 (en) 2011-02-16 2014-08-19 Cree, Inc. Light emitting diode (LED) chips and devices for providing failure mitigation in LED arrays
US8455908B2 (en) * 2011-02-16 2013-06-04 Cree, Inc. Light emitting devices
TWI517452B (zh) * 2011-03-02 2016-01-11 建準電機工業股份有限公司 發光晶體之多晶封裝結構
USD705181S1 (en) 2011-10-26 2014-05-20 Cree, Inc. Light emitting device component
US9735198B2 (en) 2012-03-30 2017-08-15 Cree, Inc. Substrate based light emitter devices, components, and related methods
US10134961B2 (en) 2012-03-30 2018-11-20 Cree, Inc. Submount based surface mount device (SMD) light emitter components and methods
US9345091B2 (en) 2013-02-08 2016-05-17 Cree, Inc. Light emitting device (LED) light fixture control systems and related methods
US10295124B2 (en) 2013-02-27 2019-05-21 Cree, Inc. Light emitter packages and methods
DE102013215326A1 (de) * 2013-04-30 2014-10-30 Tridonic Jennersdorf Gmbh LED-Modul mit hochreflektierender Fläche
USD740453S1 (en) 2013-06-27 2015-10-06 Cree, Inc. Light emitter unit
USD739565S1 (en) 2013-06-27 2015-09-22 Cree, Inc. Light emitter unit
CN104282830B (zh) * 2013-07-12 2018-01-30 展晶科技(深圳)有限公司 发光二极管模组
JP6201617B2 (ja) * 2013-10-17 2017-09-27 日亜化学工業株式会社 発光装置
CN104393159A (zh) * 2014-10-21 2015-03-04 深圳市瑞丰光电子股份有限公司 一种led灯丝
EP3239592B1 (en) * 2014-11-18 2021-03-31 Seoul Semiconductor Co., Ltd. Light emitting device and vehicular lamp comprising same
US9252337B1 (en) 2014-12-22 2016-02-02 Bridgelux, Inc. Composite substrate for light emitting diodes
USD823492S1 (en) 2016-10-04 2018-07-17 Cree, Inc. Light emitting device
CN114520281A (zh) * 2020-11-20 2022-05-20 隆达电子股份有限公司 发光装置、背光板及显示面板

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1355571A (zh) * 2000-11-23 2002-06-26 诠兴开发科技股份有限公司 发光二极管的封装方法
CN1679179A (zh) * 2002-09-02 2005-10-05 帝希欧有限公社 表面安装型发光二极管
CN1860620A (zh) * 2003-09-30 2006-11-08 株式会社东芝 发光装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2735089B2 (ja) 1993-03-22 1998-04-02 株式会社サトミ製作所 軽質の細かい異物の除去方法
WO2006005062A2 (en) * 2004-06-30 2006-01-12 Cree, Inc. Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
JP4176703B2 (ja) * 2004-11-25 2008-11-05 松下電器産業株式会社 半導体発光装置、照明装置、携帯通信機器、カメラ、及び製造方法
TW200721525A (en) 2005-11-16 2007-06-01 High Power Lighting Corp Package structure of combining zener diode chip and light-emitting diode chip
US7607815B2 (en) * 2006-11-27 2009-10-27 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Low profile and high efficiency lighting device for backlighting applications
US20080246397A1 (en) * 2007-04-04 2008-10-09 Bily Wang Manufacturing method of white light led and structure thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1355571A (zh) * 2000-11-23 2002-06-26 诠兴开发科技股份有限公司 发光二极管的封装方法
CN1679179A (zh) * 2002-09-02 2005-10-05 帝希欧有限公社 表面安装型发光二极管
CN1860620A (zh) * 2003-09-30 2006-11-08 株式会社东芝 发光装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103000785A (zh) * 2012-11-05 2013-03-27 何忠亮 一种led发光结构及其制作方法

Also Published As

Publication number Publication date
EP2071637A2 (en) 2009-06-17
US20090146155A1 (en) 2009-06-11
CN101459211A (zh) 2009-06-17
US7994518B2 (en) 2011-08-09

Similar Documents

Publication Publication Date Title
CN101459211B (zh) 固态发光器件
KR101039994B1 (ko) 발광소자 및 이를 구비한 라이트 유닛
JP6166546B2 (ja) 発光素子、発光素子製造方法、及びこれを備えた照明システム
CN102651442B (zh) 发光二极管光源
CN102044616A (zh) 发光设备和照明系统
KR20150027480A (ko) 발광 소자 패키지
US9184349B2 (en) Light emitting device, adhesive having surface roughness, and lighting system having the same
US8476662B2 (en) Light emitting device, method for manufacturing the same, and backlight unit
KR102042214B1 (ko) 발광 모듈 및 이를 구비한 조명 장치
KR20150109591A (ko) 발광 소자 패키지
KR20140049274A (ko) 광원 모듈 및 이를 구비한 조명시스템
KR101047633B1 (ko) 발광소자 및 이를 구비한 라이트 유닛
KR101905520B1 (ko) 발광 소자
KR20110128693A (ko) 발광 소자 패키지 및 이를 구비한 라이트 유닛
KR102432222B1 (ko) 광학 플레이트, 조명 소자 및 광원 모듈
KR20110138756A (ko) 발광 소자
KR102531846B1 (ko) 광학 플레이트, 발광 소자 및 광원 모듈
KR102451866B1 (ko) 광학 플레이트, 조명 소자 및 광원 모듈
KR102110477B1 (ko) 발광 소자 및 이를 구비한 조명시스템
KR101936289B1 (ko) 발광 소자
KR102075080B1 (ko) 발광 소자, 발광 소자 제조방법 및 조명 장치
KR101946921B1 (ko) 발광 장치 및 이를 구비한 조명시스템
KR102101367B1 (ko) 발광 소자
KR20170052208A (ko) 광학 플레이트, 조명 소자 및 광원 모듈
KR102531104B1 (ko) 광학 플레이트, 발광 소자 및 광원 모듈

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee
CP01 Change in the name or title of a patent holder

Address after: 201600 Shanghai City, Songjiang District Songjiang Industrial Zone West science and Technology Industrial Park No. 500 Wen Ji Lu

Patentee after: Foxsemicon Semiconductor Precision (Shanghai) Inc.

Patentee after: Foxsemicon Integrated Technology Inc.

Address before: 201600 Shanghai City, Songjiang District Songjiang Industrial Zone West science and Technology Industrial Park No. 500 Wen Ji Lu

Patentee before: Foxsemicon Semiconductor Precision (Shanghai) Inc.

Patentee before: Foxsemicon Integrated Technology Inc.

C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110302

Termination date: 20131211