CN101459211A - 固态发光器件 - Google Patents
固态发光器件 Download PDFInfo
- Publication number
- CN101459211A CN101459211A CNA2007102029837A CN200710202983A CN101459211A CN 101459211 A CN101459211 A CN 101459211A CN A2007102029837 A CNA2007102029837 A CN A2007102029837A CN 200710202983 A CN200710202983 A CN 200710202983A CN 101459211 A CN101459211 A CN 101459211A
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- emitting element
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- light emitting
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- 239000007787 solid Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- 239000010703 silicon Substances 0.000 claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract 5
- 238000004806 packaging method and process Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 230000007547 defect Effects 0.000 abstract 1
- 238000000605 extraction Methods 0.000 description 7
- 239000000843 powder Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000000630 rising effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- -1 acryl Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
Abstract
Description
Claims (12)
- 【权利要求1】一种固态发光器件,其包括:一个硅封装基板,其具有一个承载面;多个电极,其贯穿所述承载面;一个固态发光元件,设置在所述承载面上且与所述多个电极形成电连接;一个反射层,用以反射所述固态发光元件受激产生的光,所述反射层包括一个第一反射部以及一个第二反射部,所述第一反射部与第二反射部共面设置在所述承载面上;一具聚光功能的透明封装体,其设置在所述承载面上且覆盖住所述固态发光元件及所述第一反射部,所述第二反射部暴露在所述透明封装体的外部。
- 【权利要求2】如权利要求1所述的固态发光器件,其特征在于所述第一反射部位于所述承载面与固态发光元件之间。
- 【权利要求3】如权利要求1所述的固态发光器件,其特征在于所述第一反射部的对应所述固态发光元件的位置设置有开口,所述固态发光元件位于所述开口内且所述第一反射部环绕所述固态发光元件。
- 【权利要求4】如权利要求1所述的固态发光器件,其特征在于所述第一反射部与第二反射部的材料为金属或白色物质。
- 【权利要求5】如权利要求1所述的固态发光器件,其特征在于所述第一反射部与第二反射部与所述多个电极均不导通。
- 【权利要求6】如权利要求1所述的固态发光器件,其特征在于所述透明封装体为球形透镜或锥形透镜。
- 【权利要求7】如权利要求1所述的固态发光器件,其特征在于所述透明封装体的材料折射率大于1.4。
- 【权利要求8】如权利要求1所述的固态发光器件,其特征在于所述固态发光元件为一个发光二极管芯片或多个发光二极管芯片的组合。
- 【权利要求9】如权利要求1所述的固态发光元件,其还包括一个辅助元件,所述硅封装基底的承载面向内开设有埋入孔,所述辅助元件容置在所述埋入孔内。
- 【权利要求10】一种固态发光器件,其包括:一个硅封装基板,其具有一个承载面;多个电极,其贯穿所述承载面;一个固态发光元件,设置在所述承载面上且与所述多个电极形成电连接;一个波长转换层,其包括一个第一部分以及一个第二部分,所述第一部分与第二部分共面设置在所述承载面上且所述第一部分位于所述承载面与固态发光元件之间;一具聚光功能的透明封装体,其设置在所述承载面上且覆盖住所述固态发光元件及所述波长转换层的第一部分,所述波长转换层的第二部分暴露在所述透明封装体的外部。
- 【权利要求11】如权利要求10所述的固态发光器件,其特征在于所述透明封装体为球形透镜或锥形透镜。
- 【权利要求12】如权利要求10所述的固态发光元件,其还包括一个辅助元件,所述硅封装基底的承载面向内开设有埋入孔,所述辅助元件容置在所述埋入孔内。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2007102029837A CN101459211B (zh) | 2007-12-11 | 2007-12-11 | 固态发光器件 |
US12/202,555 US7994518B2 (en) | 2007-12-11 | 2008-09-02 | Light-emitting diode |
EP08253440A EP2071637A2 (en) | 2007-12-11 | 2008-10-22 | Light emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2007102029837A CN101459211B (zh) | 2007-12-11 | 2007-12-11 | 固态发光器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101459211A true CN101459211A (zh) | 2009-06-17 |
CN101459211B CN101459211B (zh) | 2011-03-02 |
Family
ID=40329088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007102029837A Expired - Fee Related CN101459211B (zh) | 2007-12-11 | 2007-12-11 | 固态发光器件 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7994518B2 (zh) |
EP (1) | EP2071637A2 (zh) |
CN (1) | CN101459211B (zh) |
Cited By (3)
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CN102479909A (zh) * | 2010-11-24 | 2012-05-30 | 展晶科技(深圳)有限公司 | 发光二极管 |
CN104282830A (zh) * | 2013-07-12 | 2015-01-14 | 展晶科技(深圳)有限公司 | 发光二极管模组 |
CN111509111A (zh) * | 2014-11-18 | 2020-08-07 | 首尔半导体株式会社 | 发光装置及包括该发光装置的车灯 |
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TWI426206B (zh) * | 2008-12-25 | 2014-02-11 | Au Optronics Corp | 發光二極體裝置 |
KR101064026B1 (ko) * | 2009-02-17 | 2011-09-08 | 엘지이노텍 주식회사 | 발광 디바이스 패키지 및 그 제조방법 |
JP5343831B2 (ja) * | 2009-04-16 | 2013-11-13 | 日亜化学工業株式会社 | 発光装置 |
US8474997B2 (en) * | 2010-04-07 | 2013-07-02 | Appotronics Corporation Limited | High brightness illumination device using double-sided excitation of wavelength conversion materials |
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TWI478319B (zh) * | 2010-07-20 | 2015-03-21 | Epistar Corp | 整合式發光裝置及其製造方法 |
USD712850S1 (en) | 2010-11-18 | 2014-09-09 | Cree, Inc. | Light emitter device |
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USD707192S1 (en) | 2010-11-18 | 2014-06-17 | Cree, Inc. | Light emitting device |
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KR20140097284A (ko) | 2011-11-07 | 2014-08-06 | 크리,인코포레이티드 | 고전압 어레이 발광다이오드(led) 장치, 기구 및 방법 |
US9735198B2 (en) | 2012-03-30 | 2017-08-15 | Cree, Inc. | Substrate based light emitter devices, components, and related methods |
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CN1129968C (zh) * | 2000-11-23 | 2003-12-03 | 诠兴开发科技股份有限公司 | 发光二极管的封装方法 |
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TW200721525A (en) | 2005-11-16 | 2007-06-01 | High Power Lighting Corp | Package structure of combining zener diode chip and light-emitting diode chip |
US7607815B2 (en) * | 2006-11-27 | 2009-10-27 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Low profile and high efficiency lighting device for backlighting applications |
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-
2007
- 2007-12-11 CN CN2007102029837A patent/CN101459211B/zh not_active Expired - Fee Related
-
2008
- 2008-09-02 US US12/202,555 patent/US7994518B2/en not_active Expired - Fee Related
- 2008-10-22 EP EP08253440A patent/EP2071637A2/en not_active Withdrawn
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102479909A (zh) * | 2010-11-24 | 2012-05-30 | 展晶科技(深圳)有限公司 | 发光二极管 |
CN104282830A (zh) * | 2013-07-12 | 2015-01-14 | 展晶科技(深圳)有限公司 | 发光二极管模组 |
CN104282830B (zh) * | 2013-07-12 | 2018-01-30 | 展晶科技(深圳)有限公司 | 发光二极管模组 |
CN111509111A (zh) * | 2014-11-18 | 2020-08-07 | 首尔半导体株式会社 | 发光装置及包括该发光装置的车灯 |
Also Published As
Publication number | Publication date |
---|---|
EP2071637A2 (en) | 2009-06-17 |
US20090146155A1 (en) | 2009-06-11 |
US7994518B2 (en) | 2011-08-09 |
CN101459211B (zh) | 2011-03-02 |
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