JP6166546B2 - 発光素子、発光素子製造方法、及びこれを備えた照明システム - Google Patents
発光素子、発光素子製造方法、及びこれを備えた照明システム Download PDFInfo
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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Description
11 モールド部材
13 キャビティ
16、16C、16D、16E、16F、16G、16H、16I 接着フィルム
16B 接着部材
20、20A 基板
21、22、72、73、82、83 リード電極
24 間隙部
31 発光チップ
41 樹脂部材
Claims (16)
- 第1及び第2リード電極を有する基板と、
前記基板の上部に配置されてキャビティを有するモールド部材と、
前記キャビティの内に配置され、前記第1及び第2リード電極のうち、少なくとも1つの上に配置された発光チップと、
前記第1及び第2リード電極のうちのいずれか1つと前記発光チップとを電気的に連結する連結部材と、
前記キャビティに配置された樹脂部材と、
前記第1及び第2リード電極の間に前記モールド部材と前記樹脂部材と異なる材質を有する間隙部と、
前記モールド部材と前記基板との間に配置された接着フィルムと、を含み、
前記接着フィルムは、前記モールド部材の下面の幅と異なる幅を有し、
前記モールド部材及び前記接着フィルムは、前記第1及び第2リード電極に接触し、
前記接着フィルムは、前記第1及び第2リード電極の上面と前記モールド部材の下面に接着され、
前記モールド部材はエポキシ系列の樹脂材質で形成され、
前記樹脂部材はシリコン系列の樹脂材質で形成され、
前記接着フィルムは、前記モールド部材の下面と対応する領域の一部がオープンされたオープン領域を含み、前記接着フィルムのオープン領域には前記モールド部材の突起が配置され、
前記第1及び第2リード電極のそれぞれに溝が配置され、
前記モールド部材の突起は、前記接着フィルムのオープン領域を通じて前記第1及び第2リード電極の溝にそれぞれ結合され、
前記溝は、前記第1及び第2リード電極の厚さより小さい深さを有することを特徴とする、発光素子。 - 前記接着フィルムは、前記モールド部材の下面の幅より狭い幅を有することを特徴とする、請求項1に記載の発光素子。
- 前記モールド部材の第1外側壁は、前記第1リード電極の外側壁と同一平面上に配置され、前記モールド部材の第2外側壁は、前記第2リード電極の外側壁と同一平面上に配置されることを特徴とする、請求項1または2に記載の発光素子。
- 前記間隙部は、絶縁物質の金属酸化物または金属窒化物を含むことを特徴とする、請求項3に記載の発光素子。
- 前記モールド部材は、前記キャビティの底に前記発光チップに隣接した延長部を含み、前記接着フィルムは、前記モールド部材の延長部と前記第1及び第2リード電極との間に延長されることを特徴とする、請求項1乃至4のうち、いずれか1項に記載の発光素子。
- 前記延長部は、前記キャビティの底で前記発光チップが配置された第1オープン領域と、前記発光チップと連結された連結部材が配置された第2オープン領域とを含み、前記接着フィルムは、前記第1及び第2オープン領域と対応する領域がオープンされることを特徴とする、請求項5に記載の発光素子。
- 前記基板は、前記第1及び第2リード電極の下に支持部材を含み、前記支持部材は、樹脂材質またはセラミック材質を含むことを特徴とする、請求項1乃至6のうち、いずれか1項に記載の発光素子。
- 前記接着フィルムの内側壁は前記キャビティに露出し、前記樹脂部材に接触することを特徴とする、請求項1乃至7のうち、いずれか1項に記載の発光素子。
- 前記接着フィルムの外側壁は、前記モールド部材の外側壁と同一平面上に配置されることを特徴とする、請求項6に記載の発光素子。
- 前記モールド部材は蛍光物質を含むことを特徴とする、請求項1乃至9のうち、いずれか1項に記載の発光素子。
- 前記接着フィルムは、PVCフィルム、Polyethylene terephthalate(PET)フィルム、Polycarbonate(PC)、Polystyrene(PS)、ポリイミドのうち、少なくとも1つを含むことを特徴とする、請求項1乃至10のうち、いずれか1項に記載の発光素子。
- 複数の結合孔を有する複数のリード電極を含む基板と、
キャビティを有し、前記基板の上部に配置され、前記複数のリード電極の複数の結合孔と結合されたモールド部材と、
前記キャビティの内に配置され、前記複数のリード電極のうち、少なくとも1つの上に配置された発光チップと、
前記複数のリード電極のうちのいずれか1つと前記発光チップとを電気的に連結する連結部材と、
前記キャビティに配置された樹脂部材と、
前記複数のリード電極の間に前記モールド部材及び前記樹脂部材と異なる材質を有する間隙部と、
前記モールド部材と前記基板との間に配置された接着部材と、を含み、
前記接着部材は、前記モールド部材の下面の幅と異なる幅を有し、
前記モールド部材及び前記接着部材は、前記複数のリード電極に接触し、
前記モールド部材はエポキシ系列の樹脂材質で形成され、
前記樹脂部材はシリコン系列の樹脂材質で形成され、
前記結合孔は前記複数のリード電極のそれぞれに配置され、
前記モールド部材は、前記複数のリード電極のそれぞれの結合孔の一部に結合される複数の突起を含み、前記複数の突起は、前記結合孔の深さより低い深さを有し、
前記モールド部材の突起は、前記複数のリード電極の下面から離隔し、
前記複数のリード電極は、前記間隙部に対応する領域がリセスされた領域を含み、
前記接着部材は前記モールド部材と同一材質であり、
前記接着部材は、前記キャビティの側壁より内側に突出し、前記モールド部材の外側壁より外側に突出し、
前記モールド部材の外側壁は、前記第1及び第2リード電極の外側壁と同一平面上に配置されることを特徴とする、発光素子。 - 前記モールド部材は蛍光物質を含むことを特徴とする、請求項12に記載の発光素子。
- 前記間隙部は、絶縁物質の金属酸化物または金属窒化物を含むことを特徴とする、請求項13に記載の発光素子。
- 第1及び第2リード電極を有する基板と、
前記基板の上部に配置されてキャビティを有するモールド部材と、
前記キャビティの内に配置され、前記第1及び第2リード電極のうち、少なくとも1つの上に配置された発光チップと、
前記第1及び第2リード電極のうちのいずれか1つと前記発光チップとを電気的に連結する連結部材と、
前記キャビティに配置された樹脂部材と、
前記第1及び第2リード電極の間に前記モールド部材と前記樹脂部材と異なる材質を有する間隙部と、
前記モールド部材と前記基板との間に配置された接着フィルムと、を含み、
前記接着フィルムは、前記モールド部材の下面の幅と異なる幅を有し、
前記モールド部材及び前記接着フィルムは、前記第1及び第2リード電極に接触し、
前記接着フィルムは、前記第1及び第2リード電極の上面と前記モールド部材の下面に接着され、
前記モールド部材はエポキシ系列の樹脂材質で形成され、
前記樹脂部材はシリコン系列の樹脂材質で形成され、
前記間隙部は、絶縁物質の金属酸化物または金属窒化物を含むことを特徴とする、発光素子。 - 前記接着フィルムは前記モールド部材と同一材質であり、前記モールド部材は蛍光物質を含み、
前記モールド部材は、前記キャビティの底に前記発光チップに隣接した延長部を含み、
前記接着フィルムは、前記モールド部材の延長部と前記第1及び第2リード電極との間に延長されることを特徴とする、請求項15に記載の発光素子。
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