CN114520281A - 发光装置、背光板及显示面板 - Google Patents

发光装置、背光板及显示面板 Download PDF

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CN114520281A
CN114520281A CN202011306944.3A CN202011306944A CN114520281A CN 114520281 A CN114520281 A CN 114520281A CN 202011306944 A CN202011306944 A CN 202011306944A CN 114520281 A CN114520281 A CN 114520281A
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emitting device
layer
light emitting
light
reflective layer
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田运宜
吴有章
张宇礼
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Lextar Electronics Corp
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Lextar Electronics Corp
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Priority to CN202011306944.3A priority Critical patent/CN114520281A/zh
Priority to TW110139919A priority patent/TWI780966B/zh
Priority to US17/454,820 priority patent/US11579486B2/en
Publication of CN114520281A publication Critical patent/CN114520281A/zh
Priority to US18/151,403 priority patent/US11906844B2/en
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    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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Abstract

本揭露提供一种发光装置、背光板及显示面板,发光装置包含基板、导电层、第一反射层、发光元件、第二反射层以及封装层。导电层设置于基板上。第一反射层覆盖该导电层且具有一开口暴露出导电层的一部分。发光元件设置于开口内并电性连接导电层。第二反射层设置于第一反射层上并环绕发光元件,且第二反射层具有一外直径。封装层覆盖该发光元件。封装层的最高点与第一反射层的上表面之间具有一高度,且此高度为外直径的0.1倍至0.5倍。此发光装置可以减少光损失。

Description

发光装置、背光板及显示面板
技术领域
本揭露是有关于一种发光装置、一种背光板以及一种显示面板。
背景技术
随着发光二极管技术的进步与市场需求增多,以次毫米发光二极管/微发光二极管(Mini-LED/Micro-LED)为代表的新型显示技术应运而生。
Mini-LED的封装主要包括COB(Chip on Board)技术和IMD(Integrated MountedDevices)集合封装技术两种方案,其中COB技术是将LED晶片直接封装到模块基板上,再对每个大单元进行整体模封。然而,现有的多种COB封装技术仍存在生产成本高、光损失严重以及产品稳定性不佳等多种问题。
发明内容
有鉴于此,本揭露的一目的在于提出一种可解决上述问题的发光装置、背光板以及显示面板。
本揭露的一态样是提供一种发光装置,其包含基板、导电层、第一反射层、发光元件、第二反射层以及封装层。导电层设置于基板上。第一反射层覆盖该导电层且具有一开口暴露出导电层的一部分。发光元件设置于开口内并电性连接导电层。第二反射层设置于第一反射层上并环绕发光元件,且第二反射层具有一外直径。封装层覆盖该发光元件。封装层的最高点与第一反射层的上表面之间具有一高度,且此高度为外直径的0.1倍至0.5倍。
在多个实施例中,第二反射层具有一内直径,且外直径与内直径的差值介于0.05mm至0.6mm。
在多个实施例中,第一反射层和第二反射层的材料皆为白色油墨。
在多个实施例中,第二反射层的顶表面低于发光元件的顶表面。
在多个实施例中,第二反射层的厚度为20um至60um。
在多个实施例中,外直径为2.0mm至4.5mm。
在多个实施例中,封装层完全覆盖第二反射层。
在多个实施例中,封装层具有一弧形外表面。
在多个实施例中,封装层具有由下往上等差递减的宽度且具有弧形顶表面。
在多个实施例中,封装层具有由下往上等差递减的宽度且具有平坦顶表面。
本揭露的另一态样是提供一种背光板,其包含多个如上所述的发光装置。任两相邻的发光装置间隔一距离,且外直径小于此距离的0.5倍。
本揭露的又一态样是提供一种显示面板,其包含如上所述的背光板、下扩散片、量子点层、光学膜片、上扩散片以及液晶面板。下扩散片设置于背光板上。量子点层设置于下扩散片上。光学膜片设置于量子点层上。上扩散片设置于光学膜片上。液晶面板设置于上扩散片上方。
附图说明
为让本揭露的上述和其他目的、特征、优点与实施例能更明显易懂,所附附图的说明如下:
图1A绘示本揭露一比较例的发光装置的立体示意图;
图1B绘示图1A的发光装置的剖面示意图;
图2绘示本揭露另一比较例的发光装置的剖面示意图;
图3绘示本揭露又一比较例的制造发光装置的剖面示意图;
图4绘示本揭露一实施方式的发光装置的剖面示意图;
图5A、图5B及图5C绘示本揭露多个实施方式的第二反射层的上视示意图;
图6绘示本揭露一实施方式的发光装置的剖面示意图;
图7A绘示本揭露一实施方式的发光装置所发出光的路径图;
图7B绘示本揭露一实施方式的发光装置所发出光的均匀性示意图;
图7C绘示本揭露另一实施方式的发光装置所发出光的路径图;
图7D绘示本揭露另一实施方式的发光装置所发出光的均匀性示意图;
图8A、图8B、图8C及图8D绘示本揭露多个实施方式的发光装置的剖面示意图;
图9A及图9B绘示本揭露一实施方式的发光装置的封装层加工前后的发光均匀性示意图;
图10绘示本揭露一实施方式的背光板的剖面示意图;
图11绘示本揭露一实施方式的显示面板的剖面示意图。
【符号说明】
10:发光装置
110:电路板
120:发光二极管
130:封装胶
20:发光装置
210:电路板
212:基板
214:导电层
216:防焊保护层
220:发光二极管
230:环状坝体
240:封装胶
30:发光装置
310:电路板
320:发光二极管
330:透明罩
40:发光装置
410:基板
420:导电层
430:第一反射层
432:开口
440:发光元件
450:第二反射层
460:封装层
60:发光装置
80a,80b,80c,80d:发光装置
90:背光板
1000:显示面板
1010:下扩散片
1020:量子点层
1030:光学膜片
1040:上扩散片
1050:液晶面板
Din:内直径
Dout:外直径
H:高度
TH:厚度
P:距离
具体实施方式
为了使本揭露内容的叙述更加详尽与完备,下文针对了本揭露的实施态样与具体实施例提出了说明性的描述;但这并非实施或运用本揭露具体实施例的唯一形式。以下所揭露的各实施例,在有益的情形下可相互组合或取代,也可在一实施例中附加其他的实施例,而无须进一步的记载或说明。
能理解的是,虽然在此可使用用语“第一”、“第二”、“第三”等来叙述各种元件、组成成分、区域、层、及/或部分,这些元件、组成成分、区域、层、及/或部分不应被这些用语限定,且这些用语仅是用来区别不同的元件、组成成分、区域、层、及/或部分。因此,以下讨论的一第一元件、组成成分、区域、层、及/或部分可在不偏离本发明的教示的情况下被称为一第二元件、组成成分、区域、层、及/或部分。
在以下描述中,将详细叙述许多特定细节以使读者能够充分理解以下的实施例。然而,可在无这些特定细节的情况下实践本揭露的实施例。在其他情况下,为简化附图,熟知的结构与装置仅示意性地绘示于图中。
图1A绘示本揭露一比较例的发光装置10的立体示意图。图1B绘示图1A的发光装置10的剖面示意图。请同时参阅图1A及图1B,发光装置10包含电路板110、多个发光二极管120以及封装胶130。多个发光二极管120间隔设置在电路板110上。封装胶130完全覆盖电路板110和多个发光二极管120。应注意,封装胶130是通过全面涂布的方式完全覆盖电路板110和多个发光二极管120。这种方式,会使得发光装置10的表面平坦度大幅下降,进而无法达到产品规格要求。此外,这种全面涂布封装胶130的方式亦会同时覆盖发光装置10的无效区域,而使得成本上升,进而造成产品竞争力下降。
图2绘示本揭露另一比较例的发光装置20的剖面示意图。请参阅图2,发光装置20包含电路板210、发光二极管220、环状坝体(Dam)230以及封装胶240。可以理解的是,电路板210包含基板212、设置于基板212上的导电层214以及设置于导电214上的防焊保护层216。发光二极管220设置于电路板210的导电层214上,以与导电层214电性连接。环状坝体230设置于电路板210的防焊保护层216,且环绕发光二极管220。一般来说,环状坝体230可由绝缘性材料构成,其中绝缘性材料例如是硅胶。封装胶240填充于环状坝体230内并覆盖发光二极管220。由于环状坝体230的材料的粘度较高,其所形成的环状坝体230的宽度和高度都比发光二极管220的宽度和高度大,因此,这种发光装置20容易造成光损失,而不适用于形成大尺寸灯板。
图3绘示本揭露又一比较例的制造发光装置30的剖面示意图。发光装置30包含电路板310、发光二极管320以及透明罩330。发光二极管320设置在电路板310上。透明罩330封住设置在电路板310上的单一发光二极管320。具体的说,透明罩330是通过压模(molding)成型的方式所形成。透明罩330的材料包括聚硅氧树脂、环氧树脂与玻璃。然而,制造和操作压模设备皆很昂贵,且在生产大尺寸压模产品的稳定性亦不佳。
图4绘示本揭露一实施方式的发光装置40的剖面示意图。请参阅图4,发光装置40包含基板410、导电层420、第一反射层430、发光元件440、第二反射层450以及封装层460。在多个实施例中,基板410可为绝缘基板、铝复合材料基板、软性基板或陶瓷基板。导电层420设置于基板410上。在多个实施例中,导电层420可包含铜、铝、镍、银、金、钯及其组合的导电材料。第一反射层430覆盖导电层420,且第一反射层430具有一开口432暴露出导电层420的一部分。在多个实施例中,第一反射层430的材料为一白色油墨。详细的说,白色油墨的材料为包含有高反射性的二氧化钛的白色文字油墨。这种材料除了具有高反射性之外,还具备高耐热性(例如,不易黄变且耐应力开裂性)以及高可靠性的效果。
请继续参阅图4,发光元件440设置于开口432内并电性连接导电层420。在多个实施例中,发光元件440可以为次毫米发光二极管(mini-LED)或微发光二极管(micro-LED)。举例来说,发光元件440可以为红光迷你发光二极管、红光微发光二极管、绿光迷你发光二极管、绿光微发光二极管、蓝光次毫米发光二极管、蓝光微发光二极管、黄光次毫米发光二极管、黄光微发光二极管、白光次毫米发光二极管或白光微发光二极管。在多个实施例中,发光元件440为覆晶接触于导电层420。
请继续参阅图4,第二反射层450设置于第一反射层430上并环绕发光元件440。更具体的说,第二反射层450具有一外直径Dout。在多个实施例中,外直径Dout为2.0mm至4.5mm。举例来说,外直径Dout可以为2.1mm、2.3mm、2.5mm、2.7mm、2.9mm、3.0mm、3.1mm、3.3mm、3.5mm、3.7mm、3.9mm、4.0mm、4.1mm或4.3mm。可以理解的是,在多个实施例中,第二反射层450具有一内直径Din,且外直径Dout与内直径Din的差值介于0.05mm至0.6mm,例如,可以为0.1mm、0.15mm、0.2mm、0.25mm、0.3mm、0.35mm、0.4mm、0.45mm、0.5mm或0.55mm。若外直径Dout与内直径Din的差值小于某一数值,例如为0.05mm,则在后续形成封装层的过程中,会造成封装胶的凝聚力不足,进而容易溢胶,且封装层的高度亦不易提高。另一方面,若外直径Dout与内直径Din的差值大于某一数值,例如为0.6mm,则会增加封装胶的使用量,亦会延长形成封装层的制程时间。
在多个实施例中,第二反射层450的材料为一白色油墨。详细的说,白色油墨的材料为包含有高反射性的二氧化钛的白色文字油墨。这种材料除了具有高反射性之外,还具备高耐热性(例如,不易黄变且耐应力开裂性)以及高可靠性的效果。在多个实施例中,第二反射层450的顶表面低于发光元件440的顶表面。在多个实施例中,第二反射层450的厚度TH为20um至60um,例如,可以为25mm、30mm、35mm、40mm、45mm、50mm或55mm。若第二反射层450的厚度TH小于某一数值,例如为20mm,则在后续形成封装层的过程中,会造成封装胶的凝聚力不足,进而容易溢胶,且封装层的高度亦不易提高。另一方面,若第二反射层450的厚度TH大于某一数值,例如为60mm,则第二反射层450不易成型且亦溃堤。在多个实施例中,可以通过印刷或涂布的方式形成第二反射层450,进而可以更精准地控制第二反射层450预期所在的位置及其宽度和厚度。
图5A、图5B及图5C绘示本揭露多个实施方式的第二反射层450的上视示意图。如图5A所示,在一实施例中,第二反射层450于俯视方向所观察到的形状可以为圆形。如图5B所示,在另一实施例中,第二反射层450于俯视方向所观察到的形状可以为有圆角的三角形。如图5C所示,在又一实施例中,第二反射层450于俯视方向所观察到的形状可以为有圆角的正方形。在其他替代实施例中,第二反射层450于俯视方向所观察到的形状可以为有圆角的多边形。应注意,无论第二反射层450于俯视方向所观察到的形状为何,其皆具有一虚拟几何外接圆(如图5A至图5C中虚线所示)以及一虚拟几何内切圆(如图5A至图5C中虚线所示)。上述几何外接圆具有一外直径Dout,且上述几何内切圆具有一内直径Din,且外直径Dout与内直径Din的差值介于0.05mm至0.6mm。
请继续回到图4,封装层460覆盖发光元件440。更详细的说,封装层460的最高点与第一反射层430的上表面之间具有一高度H,且此高度H为外直径Dout的0.1倍至0.5倍,例如可为0.2倍、0.3倍或0.4倍。在多个实施例中,封装层460覆盖发光元件440及部分的第一反射层430,但并未覆盖第二反射层450。换句话说,封装层460仅设置于第二反射层450的内边缘之内。再换言之,封装层460的设置范围仅涵盖第二反射层450的内直径Din。在多个实施例中,封装层460具有一弧形外表面。在多个实施例中,可以通过点胶(dispensing)或喷射(jetting)的方式形成封装层460。在多个实施例中,封装层460可包含有机胶材(organicpackaging material)、无机胶材(inorganic packaging material)及其组合。举例来说,有机胶材包含硅橡胶(silicon rubber)、压克力及环氧树脂;无机胶材包含硅胶(silicondioxide)及氟胶,但本揭露不以此为限。封装层460可以增加屏蔽水气入侵的面积,保护发光元件440免于到水气的干扰,进而提升产品的信赖性及使用寿命。此外,封装层460亦可扮演透镜的角色,用以改变发光元件440的出光角度。
图6绘示本揭露一实施方式的发光装置60的剖面示意图。为了便于比较与上述各实施方式的相异处并简化说明,在下文的各实施例中使用相同的符号标注相同的元件,且主要针对各实施方式的相异处进行说明,而不再对重复部分进行赘述。发光装置60与发光装置40的不同之处在于:发光装置60的封装层460是完全覆盖第二反射层450。相较于发光装置40,本实施方式的发光装置60的出光均匀性更加,且更能提升其应用方面的视觉效果。
图7A绘示本揭露一实施方式的发光装置60所发出光的路径图。图7B绘示本揭露一实施方式的发光装置60所发出光的均匀性示意图。图7C绘示本揭露另一实施方式的发光装置60所发出光的路径图。图7D绘示本揭露另一实施方式的发光装置所发出光的均匀性示意图。须说明的是,图7A和图7B为发光装置60在封装层460的最高点与第一反射层430的上表面之间的高度H为外直径Dout的0.1倍的设计下所展示的出光路径及出光均匀性示意图。图7C和图7D为发光装置60在封装层460的最高点与第一反射层430的上表面之间的高度H为外直径Dout的0.5倍的设计下所展示的出光路径及出光均匀性示意图。可以理解的是,在高度H为外直径Dout的0.1倍至0.5倍的各种实施例中,当高度H越接近外直径Dout的0.5倍时,发光装置60的出光均匀性越佳。
图8A及图8B绘示本揭露多个实施方式的发光装置80a、80b的剖面示意图。如图8A和图8B所示,发光装置80a、80b的封装层460具有由下往上等差递减的宽度且具有弧形顶表面。从剖面示意图来看,发光装置80a、80b的封装层460的侧壁的斜率为一定值。发光装置80a与发光装置80b之间的区别之处在于:发光装置80a的封装层460的弧形顶表面的曲率半径小于发光装置80b的封装层460的弧形顶表面的曲率半径。也就是说,相较于发光装置80a,发光装置80b的封装层460的弧形顶表面具有较为平缓的圆弧状顶表面。在多个实施例中,可以通过后制加工将发光装置80a、80b的封装层460的侧壁平坦化。
图8C及图8D绘示本揭露多个实施方式的发光装置80c、80d的剖面示意图。如图8C和图8D所示,发光装置80c、80d的封装层460具有由下往上等差递减的宽度且具有平坦顶表面。从剖面示意图来看,发光装置80c、80d的封装层460的侧壁的斜率为一定值。发光装置80c与发光装置80d之间的区别之处在于:发光装置80c的封装层460的平坦顶表面的面积小于发光装置80d的封装层460的平坦顶表面的面积。在多个实施例中,可以通过后制加工平坦化制程,例如研磨或平抛,将发光装置80a和80b的弧形顶表面加工成平坦顶表面。
图9A及图9B绘示本揭露一实施方式的发光装置的封装层加工前后的发光均匀性示意图。图9A为发光装置的封装层未经后制加工的发光均匀性示意图。图9B为发光装置的封装层经后制加工后的发光均匀性示意图。由图9A及图9B可看出,经后制加工后的发光装置,其发光均匀性较未经后制加工后的发光装置的发光均匀性更佳。
图10绘示本揭露一实施方式的背光板90的剖面示意图。如图10所示,背光板90包含多个如上所述的发光装置(40、60、80a、80b、80c、80d及其组合)。应注意,任两相邻的发光装置间隔一距离P,且外直径Dout小于所述距离P的0.5倍。这种设计下,可以降低背光板90整体封装胶的量,举例来说,可以降低胶量达80%以上,进而可以降低成本并提升产品的市场竞争力。
图11绘示本揭露一实施方式的显示面板1000的剖面示意图。如图11所示,显示面板1000包含如上所述的背光板90、下扩散片1010、量子点层1020、光学膜片1030、上扩散片1040以及液晶面板1050。具体的说,下扩散片1010设置于背光板90上。下扩散片1010用以提升显示面板1000的辉度。
请继续参阅图11,量子点层1020设置于下扩散片1010上。在多个实施例中,量子点层1020包含红色量子点、绿色量子点、蓝色量子点及其组合。量子点层1020可以使显示面板1000具有更高的色纯度和更强的色彩表现力。
请继续参阅图11,光学膜片1030设置于量子点层1020上。在多个实施例中,光学膜片1030包含棱镜片或增亮膜(BEF)。可以理解的是,光学膜片1030的数量不仅限于如图11中的1片,依据设计设计需求光学膜片1030的数量可以为2片或者更多。光学膜片1030主要的功用为通过光的折射和反射来达到集光、提高正面出光、提升亮度的目的。因为当光经由下扩散片漫射出来之后,光线的行进方向并不集中,光的指向性差,利用光学膜片1030来修正光的行进方向,更可以大幅提升显示面板1000整体的亮度。
请继续参阅图11,上扩散片1040设置于光学膜片1030上。上扩散片1040可以改善光的分布,以扩增视野,上扩散片1040亦可以使后续液晶面板发射出的光线更加地均匀,进而使得显示面板1000能够有柔和均匀化的面光源。
请继续参阅图11,液晶面板1050设置于上扩散片1040上方。在其他实施例中,显示面板1000还可以包含其他本领域常用的光学组件,以更佳地提升显示面板1000的视觉效能。
综上所述,本揭露的发光装置的第二反射层可以精确地控制并划分每一颗发光元件,并通过有效地调整封装层的高度来控制胶材用量,进而达到降低生产生本及提高产品市场竞争力的目的。此外,精确地掌握第二反射层的外直径与封装层高度之间的相对关系,可以进一步提升发光装置及其应用方面(例如,背光板及显示面板)的视觉效果。
虽然本揭露已以实施方式揭露如上,然其并非用以限定本揭露,任何熟悉此技艺者,在不脱离本揭露的精神和范围内,当可作各种的更动与润饰,因此本揭露的保护范围当视所附的权利要求书所界定的范围为准。

Claims (12)

1.一种发光装置,其特征在于,包含:
一基板;
一导电层,设置于该基板上;
一第一反射层,覆盖该导电层,该第一反射层具有一开口暴露出该导电层的一部分;
一发光元件,设置于该开口内并电性连接该导电层;
一第二反射层,设置于该第一反射层上并环绕该发光元件,该第二反射层具有一外直径;以及
一封装层,覆盖该发光元件,该封装层的一最高点与该第一反射层的一上表面之间具有一高度,且该高度为该外直径的0.1倍至0.5倍。
2.根据权利要求1所述的发光装置,其特征在于,其中该第二反射层具有一内直径,且该外直径与该内直径的差值介于0.05mm至0.6mm。
3.根据权利要求1所述的发光装置,其特征在于,其中该第一反射层和该第二反射层的材料皆为一白色油墨。
4.根据权利要求1所述的发光装置,其特征在于,其中该第二反射层的一顶表面低于该发光元件的一顶表面。
5.根据权利要求1所述的发光装置,其特征在于,其中该第二反射层的一厚度为20um至60um。
6.根据权利要求1所述的发光装置,其特征在于,其中该外直径为2.0mm至4.5mm。
7.根据权利要求1所述的发光装置,其特征在于,其中该封装层完全覆盖该第二反射层。
8.根据权利要求1所述的发光装置,其特征在于,其中该封装层具有一弧形外表面。
9.根据权利要求1所述的发光装置,其特征在于,其中该封装层具有由下往上等差递减的一宽度且具有一弧形顶表面。
10.根据权利要求1所述的发光装置,其特征在于,其中该封装层具有由下往上等差递减的一宽度且具有一平坦顶表面。
11.一种背光板,其特征在于,包含:
多个如权利要求1所述的发光装置,其中任两相邻的该发光装置间隔一距离,且该外直径小于该距离的0.5倍。
12.一种显示面板,其特征在于,包含:
一如权利要求11所述的背光板;
一下扩散片,设置于该背光板上;
一量子点层,设置于该下扩散片上;
一光学膜片,设置于该量子点层上;
一上扩散片,设置于该光学膜片上;以及
一液晶面板,设置于该上扩散片上方。
CN202011306944.3A 2020-11-20 2020-11-20 发光装置、背光板及显示面板 Pending CN114520281A (zh)

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114520281A (zh) * 2020-11-20 2022-05-20 隆达电子股份有限公司 发光装置、背光板及显示面板

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN203363863U (zh) * 2013-07-19 2013-12-25 京东方科技集团股份有限公司 一种直下式背光模组和显示装置
US20170263816A1 (en) * 2016-03-11 2017-09-14 Samsung Electronics Co., Ltd. Light-emitting device
US20180040785A1 (en) * 2016-08-03 2018-02-08 Advanced Optoelectronic Technology, Inc. Light emitting diode
US20180045395A1 (en) * 2015-03-10 2018-02-15 Sharp Kabushiki Kaisha Lighting device, display device, and television device
US20180261741A1 (en) * 2017-03-08 2018-09-13 Cree, Inc. Substrates for light emitting diodes and related methods
CN109654404A (zh) * 2017-10-12 2019-04-19 群创光电股份有限公司 显示设备
CN109830590A (zh) * 2019-02-03 2019-05-31 泉州三安半导体科技有限公司 发光装置
CN110071208A (zh) * 2018-01-24 2019-07-30 欣兴电子股份有限公司 发光二极管结构及其制造方法以及微显示器的像素结构
CN110858599A (zh) * 2018-08-22 2020-03-03 隆达电子股份有限公司 像素阵列封装结构及显示面板
US20200136092A1 (en) * 2018-10-29 2020-04-30 Lg Display Co., Ltd. Light emitting display apparatus

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4289027B2 (ja) * 2002-07-25 2009-07-01 豊田合成株式会社 発光装置
TWI287879B (en) * 2004-11-02 2007-10-01 Chi Mei Optoelectronics Corp Light emitting device
WO2006101174A1 (ja) * 2005-03-24 2006-09-28 Kyocera Corporation 発光素子収納用パッケージおよび発光装置ならびに照明装置
JP2006351808A (ja) * 2005-06-15 2006-12-28 Matsushita Electric Works Ltd 発光装置
KR100793338B1 (ko) 2006-02-23 2008-01-11 삼성전기주식회사 발광 다이오드 모듈
JP2007251043A (ja) * 2006-03-17 2007-09-27 Ngk Spark Plug Co Ltd 発光素子収納用パッケージ
KR100809263B1 (ko) 2006-07-10 2008-02-29 삼성전기주식회사 직하 방식 백라이트 장치
JP4869165B2 (ja) 2007-06-28 2012-02-08 昭和電工株式会社 発光装置の製造方法
CN101459211B (zh) * 2007-12-11 2011-03-02 富士迈半导体精密工业(上海)有限公司 固态发光器件
JP2009194112A (ja) * 2008-02-14 2009-08-27 Dainippon Printing Co Ltd Ledモジュール用基板とその作製方法、および該ledモジュール用基板を用いたledモジュール
JP2011014890A (ja) * 2009-06-02 2011-01-20 Mitsubishi Chemicals Corp 金属基板及び光源装置
KR101081196B1 (ko) * 2010-03-22 2011-11-07 엘지이노텍 주식회사 발광소자 및 그 제조방법과 발광소자 패키지
TWI561770B (en) 2010-04-30 2016-12-11 Samsung Electronics Co Ltd Light emitting device package, light source module, backlight unit, display apparatus, television set, and illumination apparatus
JP2012204370A (ja) 2011-03-23 2012-10-22 Sony Corp 光源回路ユニットおよび照明装置、並びに表示装置
WO2012141094A1 (ja) 2011-04-13 2012-10-18 シャープ株式会社 光源モジュールおよびこれを備えた電子機器
KR101255121B1 (ko) * 2011-08-10 2013-04-22 장종진 발광 다이오드 패키지 및 그의 제조 방법
JP6414485B2 (ja) 2015-02-27 2018-10-31 日亜化学工業株式会社 発光装置
JP7082273B2 (ja) 2017-07-21 2022-06-08 日亜化学工業株式会社 発光装置、集積型発光装置および発光モジュール
JP7174216B2 (ja) 2017-10-23 2022-11-17 日亜化学工業株式会社 発光モジュールおよび集積型発光モジュール
US11037911B2 (en) 2017-12-27 2021-06-15 Nichia Corporation Light emitting device
CN111341765A (zh) * 2018-12-18 2020-06-26 深圳Tcl新技术有限公司 一种背光模组
KR20200112540A (ko) * 2019-03-22 2020-10-05 엘지이노텍 주식회사 조명 모듈 및 이를 구비한 조명 장치
CN114428421B (zh) * 2020-10-29 2023-04-18 海信视像科技股份有限公司 一种显示装置
KR20220033578A (ko) * 2020-09-07 2022-03-17 삼성디스플레이 주식회사 표시 장치
CN114520281A (zh) * 2020-11-20 2022-05-20 隆达电子股份有限公司 发光装置、背光板及显示面板

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN203363863U (zh) * 2013-07-19 2013-12-25 京东方科技集团股份有限公司 一种直下式背光模组和显示装置
US20180045395A1 (en) * 2015-03-10 2018-02-15 Sharp Kabushiki Kaisha Lighting device, display device, and television device
US20170263816A1 (en) * 2016-03-11 2017-09-14 Samsung Electronics Co., Ltd. Light-emitting device
US20180040785A1 (en) * 2016-08-03 2018-02-08 Advanced Optoelectronic Technology, Inc. Light emitting diode
US20180261741A1 (en) * 2017-03-08 2018-09-13 Cree, Inc. Substrates for light emitting diodes and related methods
CN109654404A (zh) * 2017-10-12 2019-04-19 群创光电股份有限公司 显示设备
CN110071208A (zh) * 2018-01-24 2019-07-30 欣兴电子股份有限公司 发光二极管结构及其制造方法以及微显示器的像素结构
CN110858599A (zh) * 2018-08-22 2020-03-03 隆达电子股份有限公司 像素阵列封装结构及显示面板
US20200136092A1 (en) * 2018-10-29 2020-04-30 Lg Display Co., Ltd. Light emitting display apparatus
CN109830590A (zh) * 2019-02-03 2019-05-31 泉州三安半导体科技有限公司 发光装置

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