I28787l890twf.doc/c 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種發光裝置，且特別是有關於一 種可均勻混光的發光裝置。 【先前技術】 由於發光二極體（Light Emitting Diode，LED)的壽 命可長達十萬小時以上’且無須暖燈時間（idling time )。 再加上發光二極體具有反應速度快（約為1〇·9秒）、體積 #小、用電省、污染低、高可靠度、適合量產等優點，所以 目前已將發光二極體廣泛地應用在如大型看板、交通號誌、 燈、手機、掃描器、傳真機之光源以及照明裝置等。 請參照圖1，其繪示習知發光裝置之剖面示意圖。發 光裝置100通常係由印刷電路板110、發光二極體晶片 120、導線130及封裝膠體140所構成。其中，發光二極 體晶片120係配置於印刷電路板11〇上，並藉由導線j 而與印刷電路板110電性連接。封裝膠體14〇則係配置於 印刷電路板110上，並覆蓋住發光二極體晶片12〇，以使 發光二極體晶片120固著於印刷電路板110上。 以目前二極體的全彩化技術而言，通常係將多個可 考X出不同色光的發光^一極體晶片120配置於發光穿置1 〇〇 中，以使這些發光二極體晶片120可在發光裝置=0内進 行混光。舉例來說，一般係將紅光發光二極體晶片、綠光 發光二極體晶片以及藍光發光二極體晶片配置於同一發光 裝置内，以混合發出白光。 、 x 128781㈤c …'、而’由上述之發光裝置所發出的光線在接近紅光 體晶片處會呈現紅光’接近綠光發光二極 ?曰曰片處會呈現綠光’而接近藍光發光二極體晶片 处則會呈現藍光，如此將造成混色不均勻的現象。 【發明内容】 、有鑑於此，本發明之目的就是在提供一種發光裝置， 以使發光二極體晶片所發出的光線可在此發光裝置内 混光。 為達本發明之上述目的，本發明提出一種發光裝置， ，其包括一承載基材、多個發光二極體晶片、一封裝膠體及 夕個引腳，其中承載基材係具有一反射表面，而這些發光 一極體晶片係配置於承載基材上方，且這些發光二極體晶 片例如分別具有二電極。此外，封裝膠體係配置於承載基 材上而覆蓋這些發光二極體晶片，且封裝膠體表面具有多 個凹陷’而這些凹陷係分別對應這於些發光二極體晶片的 上方。另外’這些引腳係配置於承載基材上，並由封裝膠 體内延伸至封裝膠體外，而各個發光二極體晶片之兩個電 極係分別與這些引腳電性連接。 其中’上述之這些凹陷係可將相對應之這些發光二极 體晶片所發射之光線部分全反射至反射表面。 依照本發明的較佳實施例所述，上述之反射表面係 為一反射膜，包含高反射材質。 依照本發明的較佳實施例所述，承載基材例如是具 有一凹杯，且凹杯係具有一底面，而這些發光二極體晶片 I28787g90twf,oc/c 係配置於凹杯之底面上方，且該底面具有一第一反射面。 在一實例中，凹杯之底面設置有/第一光散射機構，且第 一光散射機構例如為多個第一溝槽，而這些第一溝槽例如 為V型溝槽，且這些第一溝槽之肖度為105°〜120°。 在另一實例中，發光裝置更包括〆第一反射面，且第一反 射面係覆蓋凹杯之底面，而這些發光二極體晶片則係配置 於第一反射面上。 依照本發明的較佳實施例所述’此發光裝置更包括 一苐二反射面，且第二反射面係覆蓋凹杯之内側表面，而 凹杯之内側表面設置有一第二光散射機構，且第二光散射 機構例如為多個第二溝槽，而這些第二溝槽例如是V型 溝槽，且這些第二溝槽之角度為80。〜90。。 依照本發明的較佳實施例所述，這些發光二極體晶 片至少包括一紅光發光二極體晶片、一藍光發光二極體晶 片以及一綠光發光二極體晶片。 夕依照本發明的較佳實施例所述，此發光裝置更包括 夕個半穿透半反射光學元件，且這些半穿透半反射光學元 件係分別配置於封裝膠體之這些凹陷内。 夕I，照本發明的較佳實施例所述，此發光裝置更包括 =條f線’且各導線係分別電性連接於這些發光二極體晶 之這些電極以及這些弓丨腳之間。 p a依照本發明的較佳實施例所述，封裝膠體之這些凹 =、、錐狀凹陷，且這些錐狀凹陷例如為圓錐狀凹陷，而這 ‘錐狀凹陷的錐角例如為6〇。〜14〇。。此外，封裝雜 12878¾。一 之折射率介於1.4〜1.8。 依照本發明的較佳實施例所述，承載基材的材質包 括金屬，而此發光裝置更包括多個絕緣墊，配置於這些引 腳與承載基材之間，以及這些發光二極體晶片與承載基材 之間。 基於上述，本發明係在發光二極體晶片上方的封裝 膠體上設計圓錐狀凹陷，此圓錐狀凹陷可將這些發光二極 體晶片所發出的光線反射至承載基材之凹杯的底面及内侧 表面’再經由凹杯之底面與内側表面散射光線。因此，這 些發光二極體晶片所發出的光線可在發光裝置内均勻混 ’光。 為讓本發明之上述和其他目的、特徵和優點能更明 顯易懂，下文特舉較佳實施例，並配合所附圖式，作詳細 呑兄明如下。 【實施方式】 一凊參照圖2A及圖2B，其中圖2A緣示本發明之第〆 二，例的一種發光裝置的剖面示意圖，而圖2B繪示一種 半穿透半反射元件之示意圖。發光裝置2〇〇主要係由承載 基^ 210、多個發光二極體晶片22〇 (在圖2A中僅繪系 出單一發光二極體晶片21〇為例做說明）、封裝膠體23卯 及多個引腳240所構成。其中，承載基材210係具有一反 面218，且此反射表面218係為一反射膜，其例如包 〜反射材質。此外，這些發光二極體晶片，係配置於 承載基材210上方。在一實施例中，這些發光二極體晶片 128787¾。— 220例如疋包括紅光發光二極體晶片、綠光發光二極體晶 片及藍光發光二極體晶片，用以混合發出白光。 請再參照圖2A，封裝膠體230a係配置於承載基材21〇 上而f蓋住這些發光二極體晶片220,且封裝膠體23〇a 例如是折射率介於1·4至1.8之間的透明材料，而此透明 材料例如是環氧樹脂（epoxy resin)。特別的是，封裝膠 體230a係具有多個凹陷232 (圖中僅繪示出單一凹陷232 為例說明），而這些凹陷232係分別位於發光二極體晶片 220的上方，其可相對應於這些發光二極體晶片22〇所發 ，射之光線部分全反射至反射表面。舉例而言，當發光二極 體晶片220所發出的光線照射至凹陷232時，此時，若入 射光線之入射角大於全反射臨界角時，將會產生全反射， 而若入射光線之入射角小於全反射臨界角時，將會產生折 射。由此可知，凹陷232可反射其所對應之發光二極體晶 片220所發出的部分光線，以避免發光二極體22〇所發出 的光線集中在其上方。在一實施例中，凹陷232例如是錐 狀凹陷，且較佳的是圓錐狀凹陷，而凹陷232的錐角A 例如是60。〜140。。 上述實施例係直接在封裝膠體230a上形成凹陷232， 並利用封裝膠體230a為密介質的特性，使部分的光線產 生全反射。然而，在本發明的其他實施例中，還可以在凹 232内配置半穿透半反射光學元件27〇(請參照圖2B)， 亦可達到上述實施例之功效。 請繼續參照圖2A，引腳240的材質例如是銅或其他 Ι28787§—, 導電材料，而這些引腳240係配置於承載基材2ι〇上 由封裝膠體23Ga内延伸至封裝膠體細 晶片220即是藉其電極222與 了極體 電性連接至引腳240，再藉由引腳細而電性連接至 路板（未繪示）。I28787l890twf.doc/c IX. Description of the Invention: [Technical Field] The present invention relates to a light-emitting device, and more particularly to a light-emitting device that can uniformly mix light. [Prior Art] Since the life of a Light Emitting Diode (LED) can be as long as 100,000 hours or more, and no idling time is required. In addition, the light-emitting diode has the advantages of fast reaction speed (about 1 〇·9 seconds), small volume #, low power consumption, low pollution, high reliability, and suitable for mass production, so the light-emitting diode is currently available. Widely used in such as large billboards, traffic signs, lights, mobile phones, scanners, fax machine light sources and lighting devices. Please refer to FIG. 1 , which is a cross-sectional view of a conventional light emitting device. The light emitting device 100 is generally composed of a printed circuit board 110, a light emitting diode wafer 120, a wire 130, and an encapsulant 140. The LED chip 120 is disposed on the printed circuit board 11 and electrically connected to the printed circuit board 110 by the wire j. The package body 14 is disposed on the printed circuit board 110 and covers the LED chip 12A so that the LED chip 120 is fixed on the printed circuit board 110. In the current full-color technology of the diode, a plurality of light-emitting diodes 120 that can detect different colors of light are usually disposed in the light-emitting through-holes, so that the light-emitting diode chips are 120 can be mixed in the illumination device = 0. For example, a red light emitting diode chip, a green light emitting diode chip, and a blue light emitting diode chip are generally disposed in the same light emitting device to mix and emit white light. , x 128781 (five) c ... ', and 'the light emitted by the above-mentioned illuminating device will appear red near the red body wafer 'close to the green light emitting diode? The green light will appear at the 曰曰 piece and close to the blue light two At the polar body wafer, blue light is present, which will cause uneven color mixing. SUMMARY OF THE INVENTION In view of the above, it is an object of the present invention to provide a light-emitting device such that light emitted from a light-emitting diode wafer can be mixed in the light-emitting device. In order to achieve the above object of the present invention, the present invention provides a light-emitting device comprising a carrier substrate, a plurality of light-emitting diode chips, an encapsulant, and a socket, wherein the carrier substrate has a reflective surface. The light-emitting diode chips are disposed above the carrier substrate, and the light-emitting diode chips have, for example, two electrodes, respectively. In addition, the encapsulant system is disposed on the carrier substrate to cover the LED chips, and the encapsulant surface has a plurality of recesses </ RTI> and the recesses respectively correspond to the upper portions of the LED chips. In addition, these pins are disposed on the carrier substrate and extend from the package body to the outside of the package rubber, and the two electrodes of the respective LED chips are electrically connected to the pins. Wherein the recesses described above can totally reflect the portion of the light emitted by the corresponding light-emitting diode wafers to the reflective surface. According to a preferred embodiment of the invention, the reflective surface is a reflective film comprising a highly reflective material. According to a preferred embodiment of the present invention, the carrier substrate has, for example, a concave cup, and the concave cup has a bottom surface, and the light-emitting diode wafers I28787g90twf, oc/c are disposed above the bottom surface of the concave cup. And the bottom surface has a first reflecting surface. In an example, the bottom surface of the concave cup is provided with a /first light scattering mechanism, and the first light scattering mechanism is, for example, a plurality of first grooves, and the first grooves are, for example, V-shaped grooves, and these first The transparency of the groove is 105°~120°. In another example, the light emitting device further includes a first reflective surface, and the first reflective surface covers the bottom surface of the concave cup, and the light emitting diode wafers are disposed on the first reflective surface. According to a preferred embodiment of the present invention, the illuminating device further includes a second reflecting surface, and the second reflecting surface covers the inner surface of the concave cup, and the inner surface of the concave cup is provided with a second light scattering mechanism, and The second light scattering mechanism is, for example, a plurality of second trenches, and the second trenches are, for example, V-shaped trenches, and the angles of the second trenches are 80. ~90. . According to a preferred embodiment of the present invention, the LED films comprise at least a red light emitting diode chip, a blue light emitting diode chip, and a green light emitting diode chip. According to a preferred embodiment of the invention, the illumination device further comprises a transflective optical element, and the transflective optical elements are respectively disposed in the recesses of the encapsulant. In the preferred embodiment of the present invention, the light-emitting device further includes a stripe f-wire and each of the wires is electrically connected to the electrodes of the light-emitting diode crystals and between the arch legs. According to a preferred embodiment of the present invention, the recesses of the encapsulant are, and the conical depressions are, for example, conical depressions, and the cone angle of the 'conical depressions is, for example, 6 〇. ~14〇. . In addition, the package is 128783⁄4. The refractive index of one is between 1.4 and 1.8. According to a preferred embodiment of the present invention, the material of the carrier substrate comprises a metal, and the light-emitting device further comprises a plurality of insulating pads disposed between the pins and the carrier substrate, and the LEDs and the LEDs are Carrying between the substrates. Based on the above, the present invention designs a conical depression on the encapsulant above the LED wafer, and the conical depression reflects the light emitted by the LED wafer to the bottom and the inside of the concave cup of the substrate. The surface 'scatters light again through the bottom and inner surfaces of the concave cup. Therefore, the light emitted by these light-emitting diode chips can be uniformly mixed in the light-emitting device. The above and other objects, features and advantages of the present invention will become more <RTIgt; 2A and 2B, wherein FIG. 2A shows a cross-sectional view of a light-emitting device according to a second embodiment of the present invention, and FIG. 2B shows a schematic view of a transflective element. The light-emitting device 2 is mainly composed of a carrier substrate 210 and a plurality of light-emitting diode chips 22 (only a single light-emitting diode chip 21 is illustrated in FIG. 2A as an example), an encapsulant 23 and A plurality of pins 240 are formed. The carrier substrate 210 has a reverse surface 218, and the reflective surface 218 is a reflective film, for example, a reflective material. Further, these light-emitting diode wafers are disposed above the carrier substrate 210. In one embodiment, these LED chips 1287873⁄4. - 220, for example, includes a red light emitting diode chip, a green light emitting diode chip, and a blue light emitting diode chip for mixing and emitting white light. Referring to FIG. 2A again, the encapsulant 230a is disposed on the carrier substrate 21 to cover the LEDs 220, and the encapsulant 23〇a is, for example, between 1.4 and 1.8. A transparent material, such as an epoxy resin. In particular, the encapsulant 230a has a plurality of recesses 232 (only a single recess 232 is illustrated as an example), and the recesses 232 are respectively located above the LED array 220, which can correspond to these The light-emitting diode chip 22 is emitted, and the emitted light portion is totally reflected to the reflective surface. For example, when the light emitted by the LED chip 220 is irradiated to the recess 232, at this time, if the incident angle of the incident light is greater than the critical angle of total reflection, total reflection will occur, and if the incident angle of the incident light is When it is less than the critical angle of total reflection, refraction will occur. It can be seen that the recess 232 can reflect part of the light emitted by the corresponding LED chip 220 to prevent the light emitted by the LED 22 from being concentrated above it. In one embodiment, the recess 232 is, for example, a tapered recess, and is preferably a conical recess, and the taper angle A of the recess 232 is, for example, 60. ~140. . The above embodiment directly forms the recess 232 on the encapsulant 230a, and utilizes the encapsulation 230a as a dense medium to cause partial reflection of light. However, in other embodiments of the present invention, the transflective optical element 27A (please refer to FIG. 2B) may also be disposed in the recess 232, and the effects of the above embodiments may also be achieved. 2A, the material of the pin 240 is, for example, copper or other germanium 28787 §, a conductive material, and the pins 240 are disposed on the carrier substrate 2 ι and extend from the encapsulant 23Ga to the encapsulant fine wafer 220. The electrode 222 and the electrode body are electrically connected to the pin 240, and then electrically connected to the circuit board (not shown) through the pin.
值得注意的是，承載基材21〇之材質例如是錦或立 他導熱材料。由於-般係以金屬作為導熱材料，因此本^ •施例中更在引腳240與承載基材21〇以及發光二極體晶片 220與承載基材210之間配置絕緣墊29〇，以使引腳24〇 ，及發光二極體晶片220分別與承載基材21〇電性絕緣。 曰除此之外，本發明之發光裝置還可以將發光二極體 晶片配置在一凹杯内，以增加發光二極體晶片所發出之光 線的混光均勻度。以下將舉實施例說明之。It is to be noted that the material of the carrier substrate 21 is, for example, a brocade or a heat conductive material. Since the metal is used as the heat conductive material, the insulating pad 29 is disposed between the lead 240 and the carrier substrate 21A and the LED substrate 220 and the carrier substrate 210 in the embodiment. The pins 24A and the LED array 220 are electrically insulated from the carrier substrate 21, respectively. In addition, the light-emitting device of the present invention can also arrange the light-emitting diode wafer in a concave cup to increase the light-mixing uniformity of the light emitted by the light-emitting diode wafer. The embodiment will be described below.
請參照圖2C及圖2D，其中圖2C繪示本發明之第二實施 例的一種發光裝置的剖面示意圖，而圖2D繪示本發明之 一種發光裝置的立體圖。發光裝置2〇〇之承載基材21〇係 具有凹杯212，且凹杯212係具有底面214以及内側表面 216 ’而發光二極體晶片220係配置於凹杯212之底面214 上方，且底面214具有一第一反射面250。 請繼續參照圖2C及圖2D，凹杯212之底面214設 置有第一光散射機構。因此，當發光二極體晶片220所發 出的光線部分被凹陷232反射後，這些被反射的光線可再 藉由第一光散射機構將其散射出封裝膠體230a，以增加 出光效率。其中，第一光散射機構例如是為多個第一溝槽 11 I28787l89〇twf.doc/c 214a ,而這些第一溝槽214a較佳的是v型溝槽，且這些 第一溝槽214a之角度為1〇5。〜12〇。。此外，在一實施 例中，還可以在第一光散射機構上配置第一反射面250， 以增加光線的反射效果。其中，第一反射面25〇的材質例 如是銀，而發光二極體晶片220即是配置於第一反射面250 另外’為了更進一步提高發光裝置2〇〇的混光效果， 本實施例更令凹杯212之内側表面216設置有一第二光散 射機構。如此一來，即可藉由第二光散射機構再次散射發 ，光二極體220所發出的光線，以使其混光度更為均勻。其 ，，第二光散射機構例如是多個第二溝槽214b，而這些 第二溝槽214b例如是v型溝槽，且這些第二溝槽214b 之角度為80°〜90。。 9 凊參照圖2E，其繪示本發明之第二實施例的另一 發光裝置的剖面示意圖。值得—提的是，封裝 並不侷限於圖2A及圖2C中所緣示之型式，其 圖2E所繪示之型式。封裝膠體230b 例如是呈二—ΑReferring to FIG. 2C and FIG. 2D, FIG. 2C is a cross-sectional view of a light-emitting device according to a second embodiment of the present invention, and FIG. 2D is a perspective view of a light-emitting device of the present invention. The carrying substrate 21 of the light-emitting device 2 has a concave cup 212, and the concave cup 212 has a bottom surface 214 and an inner surface 216', and the light-emitting diode wafer 220 is disposed above the bottom surface 214 of the concave cup 212, and the bottom surface 214 has a first reflective surface 250. 2C and 2D, the bottom surface 214 of the concave cup 212 is provided with a first light scattering mechanism. Therefore, when the light emitted from the LED wafer 220 is partially reflected by the recess 232, the reflected light can be scattered out of the encapsulant 230a by the first light scattering mechanism to increase the light extraction efficiency. The first light scattering mechanism is, for example, a plurality of first trenches 11 I28787l89〇twf.doc/c 214a, and the first trenches 214a are preferably v-type trenches, and the first trenches 214a The angle is 1〇5. ~12〇. . In addition, in an embodiment, the first reflective surface 250 may be disposed on the first light scattering mechanism to increase the reflection effect of the light. The material of the first reflective surface 25A is, for example, silver, and the light-emitting diode wafer 220 is disposed on the first reflective surface 250. In order to further improve the light-mixing effect of the light-emitting device 2, the embodiment further The inner surface 216 of the concave cup 212 is provided with a second light scattering mechanism. In this way, the light emitted by the light diode 220 can be again scattered by the second light scattering mechanism to make the light mixing degree more uniform. The second light scattering mechanism is, for example, a plurality of second grooves 214b, and the second grooves 214b are, for example, v-shaped grooves, and the angles of the second grooves 214b are 80° to 90°. . 9A is a cross-sectional view showing another light-emitting device according to a second embodiment of the present invention. It is worth mentioning that the package is not limited to the type shown in Figures 2A and 2C, which is depicted in Figure 2E. The encapsulant 230b is, for example, a bismuth
Li使22G所發出的光線在經過i裝膠 b之後，可集中往同-方向投射出去。 以下將舉本發明之一模擬數據做說明， 技藝者更佳瞭解本發明之功效。 使热習此 此杈擬過程係先固定第二V型溝槽214b的角声 型溝槽214a的角度ei，以找出^^較 寺第V型溝槽214a的角度0 1。結果如表i所示。 12878¾^ 表1 : Θ1(度） 0 2(度） 效率 光強分布 70 90 X X 80 90 X Δ 90 90 X 〇 95 90 Δ 〇 100 90 △ 〇 105 90 〇 〇 110 90 〇 〇 115 90 〇 〇 120 90 〇 A 125 90 Δ Δ 〇：優△:佳X:劣 經模擬後得知，當第一 V型溝槽214a的角度6Π為 105度至120度時，本發明之發光裝置具有較佳的出光率 及光強角度。 接著，將第一 V型溝槽214a的角度0 1固定為105 度，並調整第二V型溝槽214b的角度Θ2。以找出混光 效果較佳時第二V型溝槽214b的角度02。結果如表2 所示。 13 I2878^9〇twfd〇c/c 表2 :Li allows the light emitted by the 22G to be concentrated in the same direction after passing through the i-loading b. The simulation data of one of the present invention will be described below, and the skilled person will better understand the effects of the present invention. To do this, the simulation process first fixes the angle ei of the angular acoustic groove 214a of the second V-shaped groove 214b to find the angle 0 1 of the V-shaped groove 214a of the temple. The results are shown in Table i. 128783⁄4^ Table 1: Θ1 (degrees) 0 2 (degrees) Efficiency light intensity distribution 70 90 XX 80 90 X Δ 90 90 X 〇95 90 Δ 〇100 90 △ 〇105 90 〇〇110 90 〇〇115 90 〇〇120 90 〇A 125 90 Δ Δ 〇: excellent △: good X: after the simulation, it is known that when the angle 6Π of the first V-shaped groove 214a is 105 degrees to 120 degrees, the light-emitting device of the present invention has better Light extraction rate and light intensity angle. Next, the angle 0 1 of the first V-shaped groove 214a is fixed to 105 degrees, and the angle Θ2 of the second V-shaped groove 214b is adjusted. In order to find the angle 02 of the second V-shaped groove 214b when the light mixing effect is better. The results are shown in Table 2. 13 I2878^9〇twfd〇c/c Table 2:
Θ1(度） 0 2(度） 混光效果 105 70 Δ 105 80 〇 105 90 〇 105 95 Δ 105 100 X 105 105 △ 105 110 X 105 ί -------- 115 X 105 120 X 105 125 X 〇：優△:佳X :劣 經模擬後得知，當第二V型溝槽214b的角度0 2為 80度至90度時，本發明之發光裝置具有較佳混光效果。 換言之’當第一 V型溝槽214a的角度0 1為1〇5度至120 度’而第二V型溝槽214b的角度Θ2為80度至90度時， 本毛明之叙光裝置具有較佳的出光率、混光效果以及較大 的混光有效面積。 另外，以配置有一顆紅光發光二極體晶片Θ1 (degrees) 0 2 (degrees) Mixing effect 105 70 Δ 105 80 〇105 90 〇105 95 Δ 105 100 X 105 105 △ 105 110 X 105 ί -------- 115 X 105 120 X 105 125 X 〇: Excellent △: Good X: After the simulation, it is known that when the angle 0 2 of the second V-shaped groove 214b is 80 to 90 degrees, the illuminating device of the present invention has a better light mixing effect. In other words, when the angle 0 1 of the first V-shaped groove 214a is 1〇5 degrees to 120 degrees' and the angle Θ2 of the second V-shaped groove 214b is 80 degrees to 90 degrees, the present optical device has a comparison Good light output, light mixing effect and large mixed light effective area. In addition, a red light emitting diode chip is arranged
顆I 光^光一極體晶片以及兩顆綠光發光二極體晶片的發光^ 置為例，當第—V型溝槽214a的角度Θ1及第二vm 槽21jb的角度分別為⑽度及 置上量測某些點的色度座標（CIE)，藉“二= 1287879 ; 14290twf.doc/c 體晶片220所發㈣紐在發絲置内之混光效果。當上 述四顆發光一極體晶片係配置在距發光裝置之中心約 LOmm至3.〇mm的位置上時，則可測量發光裝置之中心 P3以及與P3相距25mm的4個點pi、p2、P4及P5之 色度座標數值，而測量結果如表3所示。For example, when the light-emitting diode of the first-V-shaped groove 214a and the angle of the second vm-groove 21jb are (10) degrees and The chromaticity coordinates (CIE) of some points are measured by the "two = 1287879; 14290twf.doc/c body chip 220 (four) button in the hairline setting. When the above four light-emitting ones When the wafer system is disposed at a position of about LOmm to 3. 〇mm from the center of the illuminating device, the chromaticity coordinate values of the center P3 of the illuminating device and the four points pi, p2, P4 and P5 which are 25 mm apart from P3 can be measured. And the measurement results are shown in Table 3.
Chromatic-x Chromatic-y P1 0.335 ____J_ 0.3344 P2 0.3344 0.3316 P3 0.3382 0.3305 P4 0.3391 0.3351 P5 0.3399 0.3283 由表3可知，Pi〜P5各點的色度差異性不大。換言之，Chromatic-x Chromatic-y P1 0.335 ____J_ 0.3344 P2 0.3344 0.3316 P3 0.3382 0.3305 P4 0.3391 0.3351 P5 0.3399 0.3283 As can be seen from Table 3, the chromaticity difference of each point of Pi to P5 is not large. In other words,
發光二極體晶片220所發出的光線能夠在發光裝置2〇〇内 混光均勻。 值得注意的是，雖然上述色度的模擬數據係以可發出 白光的發光裝置為例做說明，但其並非用以限定本發明。 熟習此技藝者應該知道，本發明之發光裝置適於提高任一 色光的出光均勻度。 综上所述，本發明之發光裝置可將發光二極體晶片 往上方發出的部分光線反射回發光裝置内，以改善習知發 光裝置在發光二極體晶片上方具有較強之光強度，因而造 15 14290twf.doc/c 成光線分佈不均的問題。此外，反射回發光裝置内的光線， 可再藉由發光裝置内的光散射機構而使光線往四面八方反 射出發光裝置。因此，本發明之發光裝置可改善發光二極 體晶片所發出之光線的混光均勻度，更可以提高其出光 率。 ’、 雖然本發明已以較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 ^範圍内’當可作些許之更動與潤飾，因此本發明之保 護範圍當視後社ψ請糊範_界定者鱗。 ’、 【圖式簡單說明】 1圖1緣示習知發光裝置之剖面示意圖。 圖2A繪示本發明之第—實施例的一種發光裝 面示意圖。 j 圖2B、、、曰示種半穿透半反射元件之示意圖。 面示繪不本發明之第二實施例的-種發光裝置的剖 圖2D繪不本發明之一種發光裝置的立體圖。 置的 圖2E繪不本發明之第二實施例的另一種發光裝 剖面示意圖。 【主要元件符號說明】 100 發光裝置 110 印刷電路板 120 發光二極體晶片 130 導線 1287879 14290twf.doc/c 140 :封裝膠體 200 :發光裝置 210 :承載基材 212 :凹杯 214 :底面 214a :第一溝槽 214b :第二溝槽 216 :内側表面 218 :反射表面 220 :發光二極體晶片 222、224 :電極 230a :封裝膠體 230b :封裝膠體 232 :凹陷 240 :引腳 250 :第一反射面 260 :第二反射面 270 ··半穿透半反射光學元件 280 :導線 290 :絕緣墊 A :錐角 θ 1、02 :角度 17The light emitted from the light-emitting diode wafer 220 can be uniformly mixed in the light-emitting device 2A. It is to be noted that although the above-described chromaticity simulation data is exemplified by a light-emitting device that emits white light, it is not intended to limit the present invention. It will be appreciated by those skilled in the art that the illumination device of the present invention is suitable for increasing the uniformity of light exiting any shade of light. In summary, the illuminating device of the present invention can reflect a part of the light emitted from the LED chip to the illuminating device to improve the light intensity of the conventional illuminating device above the illuminating diode chip. Create 15 14290twf.doc / c into the problem of uneven distribution of light. In addition, the light reflected back into the illuminating device can be reflected by the light scattering mechanism in the illuminating device to illuminate the illuminating device in all directions. Therefore, the light-emitting device of the present invention can improve the uniformity of light mixing of the light emitted from the light-emitting diode wafer, and can further improve the light-emitting rate. The present invention has been disclosed in the above preferred embodiments, and is not intended to limit the invention, and any skilled person skilled in the art can make some modifications and refinements without departing from the scope of the invention. The scope of protection of the present invention is to be regarded as a stipulation of the scales. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing a conventional light-emitting device. Fig. 2A is a schematic view showing a light-emitting device according to a first embodiment of the present invention. j Figure 2B,, and 曰 show a schematic diagram of a transflective element. A cross-sectional view showing a light-emitting device of a second embodiment of the present invention is a perspective view of a light-emitting device of the present invention. Figure 2E is a cross-sectional view showing another illuminating device in accordance with a second embodiment of the present invention. [Main component symbol description] 100 Light-emitting device 110 Printed circuit board 120 Light-emitting diode chip 130 Wire 1287879 14290twf.doc/c 140: Package colloid 200: Light-emitting device 210: Carrier substrate 212: Concave cup 214: Bottom surface 214a: a trench 214b: a second trench 216: an inner surface 218: a reflective surface 220: a light emitting diode wafer 222, 224: an electrode 230a: an encapsulant 230b: an encapsulant 232: a recess 240: a pin 250: a first reflective surface 260: second reflecting surface 270 · transflective optical element 280: wire 290: insulating pad A: taper angle θ 1 , 02 : angle 17