TW582122B - Light emitting diode package structure - Google Patents
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- TW582122B TW582122B TW92101763A TW92101763A TW582122B TW 582122 B TW582122 B TW 582122B TW 92101763 A TW92101763 A TW 92101763A TW 92101763 A TW92101763 A TW 92101763A TW 582122 B TW582122 B TW 582122B
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Description
582122 五、發明說明(1) 一、【發明所屬之技術領域】 本發明係關於一種發光二極體 其關於-種可增強發光二極體之發2 裝二明ί 降低生產成本。 進而挺阿生產率並 二、【先前技術】 普業之應用上,發光二極體提供比白敎燈* 極體已經開發出各種封裝構造及方法,例如表 裝構造與倒裝晶片型封裝構造。 、 圖1顯示習知的發光二極體之封裝構造之一 面圖'參照圖1,一發光二極體10以倒裝晶片之方式安^ 於一封裝基座20上。發光二極體10具有一基板u、一 導電型半導體層12,形成於基板11上方,以及一第二導電 型半導體層13,形成於第一導電型半導體層12上方了此 外’在第一導電型半導體層12之_預定的區域上形成有一 第一電極14,而在第二導電型半導體層13之一預定的區域 上形成有一第二電極15。發光二極體;1〇之製造方法與操作 方式皆為眾所週知’故本文不再費述。 在圖1所示之習知封裝構造中,二個金屬焊球16與17 分別形成於發光二極體1〇之第一電極14與第二電極15上。 繼而以倒裝晶片之方式,二個金屬焊球1 6與1 7分別對準且 接合於封裝基座20上所形成的第一墊21與第二墊22上。最582122 V. Description of the invention (1) 1. [Technical field to which the invention belongs] The present invention relates to a light-emitting diode, which relates to a kind of light-emitting diode that can enhance the development of the light-emitting diode and reduce production costs. Productivity is further improved. 2. [Previous technology] In general industry applications, light-emitting diodes provide more than white fluorescent lamps. * The body has developed various packaging structures and methods, such as surface-mount structures and flip-chip-type package structures. 1. FIG. 1 shows one of the conventional packaging structures of a light-emitting diode. Referring to FIG. 1, a light-emitting diode 10 is mounted on a package base 20 in a flip-chip manner. The light-emitting diode 10 has a substrate u, a conductive semiconductor layer 12 formed on the substrate 11, and a second conductive semiconductor layer 13 formed on the first conductive semiconductor layer 12. In addition, the first conductive A first electrode 14 is formed on a predetermined area of the semiconductor type semiconductor layer 12, and a second electrode 15 is formed on a predetermined area of one of the second conductivity type semiconductor layers 13. Light-emitting diodes; the manufacturing methods and operating methods of 10 are well known, so this article will not go into details. In the conventional package structure shown in FIG. 1, two metal solder balls 16 and 17 are respectively formed on the first electrode 14 and the second electrode 15 of the light emitting diode 10. Then, in a flip chip manner, the two metal solder balls 16 and 17 are aligned and bonded to the first pad 21 and the second pad 22 formed on the package base 20, respectively. most
582122 五 發明說明(2) 一 後 —,使用一透明樹脂18密封發光二極 的發光二極禮之封裝。t電源經由第體1二=完成習知 應至發光二極體10時,發光二極體10 ^ 一墊供 基板11與透明樹脂1 8而射出到外界,、“線會經由 示。 如圓1中之箭頭所指 圖1所示之習知封裝構造具有下列缺點。首 焊球16與17可能彼此相接觸而導致第—電極14 二屬 15短路。再者’在發光二極體1〇以倒裝晶片“二 封裝基座20上時,必須確保金屬焊球16與17分 對^ 墊21與第二塾22 ’導致製造更加困難而增心::準 此外,期望能提供一種比圖丨所示之習知封 有=佳的發光二極體之發光效率的封裝構造’藉以構造彳氏操 所產生的熱量,進而增加發光二極體之使用壽命與可 彡、【發明内容】 有鑒於前述問題,本發明之目的在於提供一種 棰,之封裝構造,用以簡化發光二極體之封裝製程, 提南生產率並降低生產成本。 ’ 本發明之另一目的在於提供一種發光二極體之封裝構 造’具有更佳的發光二極體之發光效率,藉以降低操作中 戶斤產生的熱量,進而增加發光二極體之使用壽命盥可 展0 ^582122 V Description of the invention (2) One after the other-a transparent resin 18 is used to seal the light-emitting diode package. When the power supply passes through the body 12 and the light emitting diode 10 is completed, the light emitting diode 10 ^ a pad for the substrate 11 and the transparent resin 18 to be emitted to the outside, "the line will be shown through. The conventional package structure shown in FIG. 1 indicated by the arrow in 1 has the following disadvantages. The first solder balls 16 and 17 may contact each other and cause the short circuit of the first electrode 14 and the second genus 15. Furthermore, the light emitting diode 1 ′ When flip chip is mounted on the second package base 20, it is necessary to ensure that the metal solder balls 16 and 17 are aligned ^ The pad 21 and the second 塾 22 'cause manufacturing to be more difficult and increase the heart: In addition, it is expected to provide a comparison diagram丨 The conventional package shown with the seal = good luminous efficiency of the light-emitting diode is used to construct the heat generated by the 彳 operation, thereby increasing the life and availability of the light-emitting diode. [Summary of the Invention] Yes In view of the foregoing problems, an object of the present invention is to provide a packaging structure for simplifying the packaging process of light emitting diodes, improving productivity and reducing production costs. 'Another object of the present invention is to provide a packaging structure of a light emitting diode', which has better light emitting efficiency of the light emitting diode, thereby reducing the heat generated by households during operation, thereby increasing the life of the light emitting diode. Shown 0 ^
582122 五、發明說明(3) 依據本發 造,包括形成 係用以支撐發 容納發光二極 座之表面中位 一平面金屬詹 一樹脂填滿凹 密封發光二極 依據本發 用以提供至少 一中間檯面上 少一配線連接 二電極中之一 與至少一配線 依據本發 裝構造,包括 體之基板朝向 全容納發光二 載座之表面中 至少一平面金 個。一樹脂填 分,藉以密封 依據本發 部,用以提供 明之一態樣 有一凹槽之 光二極體之 體。至少一 於凹槽以外 中之一層與 槽且覆蓋至 體與至少一 明之另一態 一中間檯面 並連接至位 至少一平面 個。一樹脂 〇 明之又另一 形成有一貫 貫通孔之下 極體。至少 位於貫通孔 屬層中之一 滿貫通孔且 發光二極體 明之再另一 至少一中間 ,提供一種發光二極體之封裝構 一透明絕緣承載座。凹槽之底面 基板。凹槽之深度足夠用以完全 平面金屬層形成於透明絕緣承載 之區域上。至少一配線連接至少 發光二極體之二電極中之一個。 少一平面金屬層之一部分,藉以 配線。 樣,凹 。至少 於凹槽 金屬層 填滿凹 槽得具有至少一階梯部, 一平面金屬層形成於至少 以外之至少一金屬墊。至 中之一層與發光二極體之 槽,藉以密封發光二極體 態樣,提供一種發光二 通孔之 絕 開口。 一平面 緣承載座。 孔之深度足 層形成於透 以外之 層與發光二 覆蓋至少一 與至少一配 態樣 檯面 貫通 金屬 區域上。至少 極體之封 發光二極 夠用以完 明絕緣承 配線連接 極體之二電極中之一 平面金屬層之一部 線。 孔得具有至少一階梯 貫通 至少一平面金屬層形成於582122 V. Description of the invention (3) According to the present invention, including the formation of a flat metal Zhan-resin to fill the concave sealed light-emitting diodes which are used to support the surface of the light-emitting diode holder, and provide at least one One less wiring on the middle table connects one of the two electrodes and at least one wiring. According to the hair mounting structure, the substrate including the body faces at least one flat gold on the surface that fully accommodates the light-emitting two carriers. A resin filler is used to seal the light emitting diode according to the present invention to provide a light diode body with a groove. At least one layer and groove out of the groove and covering the body and at least one other state, an intermediate countertop, and connected to the at least one plane. One resin 〇 The other is formed under the body through a through hole. At least one of the through-hole metal layers is full of through-holes, and the light-emitting diode is another one, at least one in the middle, providing a light-emitting diode package structure and a transparent insulating carrier. The bottom surface of the groove. The depth of the grooves is sufficient to form a completely planar metal layer on the area of the transparent insulating carrier. At least one wiring is connected to at least one of the two electrodes of the light emitting diode. One part of the plane metal layer is missing for wiring. Like, concave. At least the groove metal layer fills the groove to have at least one stepped portion, and a planar metal layer is formed on at least one metal pad other than at least one. The grooves of the middle layer and the light emitting diode are used to seal the light emitting diode form, and provide an insulating opening of the light emitting diode through hole. A flat edge bearing seat. The depth layer of the hole is formed on the transparent layer and the light-emitting layer, and covers at least one and at least one configuration. The mesa penetrates the metal region. At least the encapsulation of the pole body and the light-emitting diode can be used to complete the insulation and wiring connection. One of the two electrodes of the pole body is a part of the planar metal layer. The hole has at least one step through, at least one planar metal layer is formed in
第9頁 582122 五、發明說明(4) 牵少_ * 塾。 丨間檯面上並連接至位於貫通孔以外之至少一金屬 恭一配線連接至少一平面金屬層與發光二極體之二 你”, 一個。一樹脂填滿貫通孔,藉以密封發光二極體 與至少一配線。 四 【實施方式】 發明之前述與其他目的、 實施例。 絕緣承載座 施例之發光 面圖。 明絕緣承載 槽31具有一 明絕緣承載 面上,在凹 面金屬層 成於平面金 邊區域上。 使得發光二 例而言,發 底面32上, 發光二择體 而得為任意 本發明之較佳 實施例之透明 本發明第一實 之線A - A ’之剖 一實施例之透 一凹槽3 1。凹 舉例而言,透 承載座30之表 彼此分離的平 a與3 5 b分別形 承載座3 0之周 放入凹槽31中 3 2所支撐。舉 黏附劑固定於 在本發明中, 類型或結構, 杜#下文中之說明與附圖將使本 特徵三與優點更明顯。 錄將參照圖示詳細說明依據 圖2 (a)顯示依據本發明第一 一 ^頂現圖,而圖2(b)顯示依據 一玉體之封裝構造沿著圖2 ( a )中 參照圖2 ( a ),依據本發明第 座30於大約中央的區域中形成有 底面32與二個側壁面33a與33b。 座3 0係由玻璃所形成。透明絕緣 槽31以外之區域中’形成有二個 34a與3 4b。此外,二個金屬墊35 屬層34a與34b上,位於透明絕緣 參照圖2 (b),發光二極體10 極體10之基板11由凹槽31之底面 光二極體10之基板11可藉由透明 以方便後續製程之進行。應注意 1 0不限於圖示所顯示的特定材料Page 9 582122 V. Description of the invention (4) Minorities _ * 塾.丨 on the mesa and connected to at least one metal located outside the through hole connected to at least one flat metal layer and two of the light emitting diode ", one. A resin fills the through hole to seal the light emitting diode and at least one One wiring. Four [Embodiments] The foregoing and other objects and examples of the invention. Illuminated side view of the example of the insulating bearing seat. The clear insulating bearing groove 31 has a clear insulating bearing surface, and the concave metal layer is formed on the flat gold edge area. As for the two examples of light emission, on the bottom surface 32, the light emitting alternative can be transparent to any preferred embodiment of the present invention. The first solid line A-A 'of the present invention is cut through one embodiment. Indentation 31. For example, indentation, the planes a and 3 5 b of the transparent bearing seat 30 are separated from each other and placed in the groove 31 and supported by the groove 31. The adhesive is fixed on the In the present invention, the type or structure, the following description and drawings will make the third feature and the advantages more obvious. The record will be described in detail with reference to the drawings. Figure 2 (a) shows the first embodiment of the present invention. Figure while 2 (b) shows a package structure according to a jade body. Referring to FIG. 2 (a) and FIG. 2 (a), according to the seat 30 of the present invention, a bottom surface 32 and two side wall surfaces 33a and 33 are formed in an approximately central area. 33b. Block 30 is made of glass. Two 34a and 34b are formed in the area other than the transparent insulation groove 31. In addition, two metal pads 35 are on the layers 34a and 34b, and are located on the transparent insulation with reference to FIG. 2 ( b), the substrate 11 of the light-emitting diode 10 is formed by the bottom surface of the groove 31, and the substrate 11 of the light-emitting diode 10 can be transparent to facilitate subsequent processes. It should be noted that 10 is not limited to the specific material
第10頁 582122 五、發明說明(5) 材料類型或結構。舉例而言,發光二極體1 0之材料類型得 為填化铭鎵銦型、氮化銘鎵銦型、氮化銦鎵型、_化紹鎵 型、或碳化發型等諸如此類者。發光二極體10之組態得為 兩電極在同一側且具有透明基板之組態。再者,發光二極 體10得設計成正面發光或背面發光。此外,發光二極體1〇 得更包括有一反射層以及一透明導電層。 依據本發明之凹槽3 1具有足夠的深度使得發光二極體 10可完全容納於凹槽31内,不會從凹槽31之開口露出。舉 例而言,凹槽31之深度小於1 〇 m。配線3 6 a用以連接第一 電極14與平面金屬層34a,而配線36b用以連接第二電極η 與平面金属層34b。樹脂37填滿凹槽31且覆蓋配線36a與 36b中露出凹槽31之部分,使得發光二極體1〇與配線36a愈 36b密封於樹脂37内。舉例而言,樹脂37得由環氧樹脂所、 形成。樹脂37中可添加具有高導熱性之材料,以增強封 構造之散熱性能。亦且,樹脂37中可添加具有高反射性之 材料’使發光二極體1〇所產生的光線中朝向樹脂37的部分 被反射以提尚發光效率。此外,為了更加提高發光效率, 一反射層(未圖示)得塗佈於樹脂37上,用以反射發光二極 體10所產生的光線朝向底面32。 當電源經由突出的金屬墊35&與351)供應至發光二極體 祕ί*發光二極體10所|生的光線會經由基板11與透明絕 ,承載座30而射出到外界,如圖2(b)中之箭頭所指示f = 較於圖1所示之習知封裝播、i . *封魅m ^ ^對裝構化,依據本發明之發光二極體 、 足,β 9由簡單的封裝製程完成,無須運用精密Page 10 582122 V. Description of the invention (5) Material type or structure. For example, the material type of the light-emitting diode 10 can be indium gallium indium type, indium gallium indium type, indium gallium nitride type, gallium gallium type, or carbonized type. The configuration of the light emitting diode 10 is a configuration in which two electrodes are on the same side and have a transparent substrate. Furthermore, the light emitting diode 10 must be designed to emit light from the front or the back. In addition, the light emitting diode 10 further includes a reflective layer and a transparent conductive layer. The groove 31 according to the present invention has a sufficient depth so that the light emitting diode 10 can be completely accommodated in the groove 31 and not exposed from the opening of the groove 31. For example, the depth of the groove 31 is less than 10 m. The wiring 36a is used to connect the first electrode 14 and the planar metal layer 34a, and the wiring 36b is used to connect the second electrode η to the planar metal layer 34b. The resin 37 fills the groove 31 and covers the portions of the wirings 36a and 36b that expose the groove 31, so that the light-emitting diodes 10 and the wirings 36a and 36b are sealed in the resin 37. For example, the resin 37 may be made of epoxy resin. A material having high thermal conductivity may be added to the resin 37 to enhance the heat dissipation performance of the sealing structure. Further, a material having high reflectivity 'may be added to the resin 37 so that a portion of the light generated by the light emitting diode 10 toward the resin 37 is reflected to improve the light emitting efficiency. In addition, in order to further improve the light emitting efficiency, a reflective layer (not shown) may be coated on the resin 37 to reflect the light generated by the light emitting diode 10 toward the bottom surface 32. When the power is supplied to the light-emitting diode 10 through the protruding metal pads 35 & 351), the light generated by the light-emitting diode 10 will be emitted to the outside through the substrate 11 and the transparent insulation, and the carrier 30, as shown in Figure 2. The arrow f in (b) indicates f = Compared to the conventional package shown in Figure 1, i. * 封 魅 m ^ ^ Pair structure, according to the light-emitting diode and foot of the present invention, β 9 is simple Complete packaging process without the need to use precision
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五、發明說明(6) 對準技術,進而提高生產率並降低生產成本。 圖3 ( a )顯示依據本發明第二實旅例之透明絕緣承載座 40之頂視圖,而圖3(b)顯示依據本發明第二實施例之發光 二極體之封裝楱造沿著圖3(a)中之線B-B,之剖面圖。下文 僅說明第二實施例不同於第一實施例之處。 參照圖3 (a)與3(b),依據本發明第二實施例不同於依 據本發明第一實施例之處在於依據本發明第二實施例之凹 槽41中形成有二個階梯部。具體而言,下侧壁面43a、中 間檯面44a、與上侧壁面45a構成一階梯部,而下侧壁面 4 3b、中間檯面44b、與上側壁面45b則構成另一階梯部。 再者,平面金屬層46a形成於中間檯面44a與上侧壁面45a 上,而平面金屬層46b則形成於中間檯面44b與上侧壁面 45b上。透明絕緣承載座30之表面上,在凹槽31以外之區 域中,形成有二個彼此分離的金屬墊47a與47b。金屬塾 47a連接於平面金屬層46a,而金屬墊47b則連接於平面金 屬層4 6 b。 發光二極體10放入凹槽41中使得發光二極體1〇之基板 11由凹槽41之底面4 2所支撐。配線4 8 a用以連接第一電極 1 4與平面金屬層4 6 a中位於中間檯面4 4 a上之部分,而配線 48b用以連接第二電極15與平面金屬層46b中位於中間檯面 44 b上之部分。藉著此種具有二個階梯部之凹槽41的設 計,配線48a與48b可完全容納於凹槽41内。最後,樹脂49 填滿凹槽41且覆蓋配線48a與48b,使得發光二極體1〇與配 線48a與48b密封於樹脂49内。舉例而言,樹脂49得由環氧V. Description of the invention (6) Alignment technology, which will increase productivity and reduce production costs. Fig. 3 (a) shows a top view of a transparent insulating carrier 40 according to a second practical example of the present invention, and Fig. 3 (b) shows a packaging fabrication diagram of a light emitting diode according to a second embodiment of the present invention. Sectional view of line BB in 3 (a). Only the differences between the second embodiment and the first embodiment will be described below. 3 (a) and 3 (b), the second embodiment according to the present invention is different from the first embodiment according to the present invention in that two step portions are formed in the groove 41 according to the second embodiment of the present invention. Specifically, the lower sidewall surface 43a, the intermediate mesa surface 44a, and the upper sidewall surface 45a constitute a stepped portion, and the lower sidewall surface 43b, the intermediate mesa surface 44b, and the upper sidewall surface 45b constitute another stepped portion. Furthermore, the planar metal layer 46a is formed on the intermediate mesa 44a and the upper side wall surface 45a, and the planar metal layer 46b is formed on the intermediate mesa 44b and the upper side wall surface 45b. On the surface of the transparent insulating carrier 30, two metal pads 47a and 47b separated from each other are formed in an area other than the groove 31. The metal hafnium 47a is connected to the planar metal layer 46a, and the metal pad 47b is connected to the planar metal layer 46b. The light emitting diode 10 is placed in the groove 41 so that the substrate 11 of the light emitting diode 10 is supported by the bottom surface 42 of the groove 41. The wiring 4 8 a is used to connect the portion of the first electrode 14 and the planar metal layer 4 6 a on the intermediate mesa 4 4 a, and the wiring 48 b is used to connect the second electrode 15 and the planar metal layer 46 b on the intermediate mesa 44. Part b. With such a design of the groove 41 having two stepped portions, the wirings 48a and 48b can be completely accommodated in the groove 41. Finally, the resin 49 fills the groove 41 and covers the wirings 48a and 48b, so that the light emitting diodes 10 and the wirings 48a and 48b are sealed in the resin 49. For example, resin 49 must be made of epoxy
第12頁 582122 五、發明說明(7) 樹脂所形成。樹脂49中可添加具有高導熱性之材料,以增 強封裝構造之散熱性能。亦且,樹脂49中可添加具有高反 射性之材料,使發光二極體1〇所產生的光線中朝;^樹脂49 的部分被反射以提高發光效率。此外,為了更加提高發光 效率,一反射層(未圖示)得塗佈於樹脂49上,用以反射發 光二極體10所產生的光線朝向底面42。 從圖2(b)與圖3(b)之比較可知,因為配線與48b可 元全位於凹槽41内,所以第二實施例之發光二極體之封裝 構造具有小於第一實施例之尺寸。Page 12 582122 V. Description of the invention (7) Resin. A material having high thermal conductivity may be added to the resin 49 to enhance the heat dissipation performance of the package structure. In addition, a highly reflective material may be added to the resin 49, so that the light generated by the light emitting diode 10 is directed toward the center; a portion of the resin 49 is reflected to improve the light emitting efficiency. In addition, in order to further improve the light emitting efficiency, a reflective layer (not shown) may be coated on the resin 49 to reflect the light generated by the light emitting diode 10 toward the bottom surface 42. As can be seen from the comparison between FIG. 2 (b) and FIG. 3 (b), since the wiring and 48b can all be located in the groove 41, the packaging structure of the light emitting diode of the second embodiment has a size smaller than that of the first embodiment. .
圖4顯示依據本發明第三實施例之發光二極體之封裝 構造之剖面圖。下文僅說明第三實施例不同於第一實施例 之處。 參照圖4,依據本發明第三實施例不同於依據本發明 第一實施例之處在於依據本發明第三實施例之絕緣承載座 50無須為透明且於大約中央的區域處形成有一貫通孔51。 貫通孔51穿過絕緣承載座50,而形成下開口 52&與上開口 5 2 b。應注意在本發明中,下開口 5 2 a之孔徑尺寸得大於、 等於、或小於上開口 52b之孔徑尺寸,不限於圖4所示之例 子。 在封住下開口 52a之情況下,從上開口 52b注入透明樹 脂53a於貫通孔51内,使得貫通孔51僅被部分填滿。繼 而’經由上開口 52b放入發光二極體1〇於貫通孔51内,使 得發光二極體1〇之基板丨丨由透明樹脂53a所支撐。在透明 樹脂5 3 a經由烘烤處理而硬化之後,發光二極體丨〇即固著FIG. 4 shows a cross-sectional view of a packaging structure of a light emitting diode according to a third embodiment of the present invention. In the following, only the third embodiment differs from the first embodiment. Referring to FIG. 4, the third embodiment according to the present invention is different from the first embodiment according to the present invention in that the insulating carrier 50 according to the third embodiment of the present invention does not need to be transparent and a through hole 51 is formed at an approximately central area. . The through hole 51 passes through the insulating carrier 50 to form a lower opening 52 & and an upper opening 5 2 b. It should be noted that in the present invention, the pore size of the lower opening 5 2 a is larger than, equal to, or smaller than the pore size of the upper opening 52 b, and is not limited to the example shown in FIG. 4. When the lower opening 52a is sealed, the transparent resin 53a is injected into the through-hole 51 from the upper opening 52b so that the through-hole 51 is only partially filled. Then, the light-emitting diode 10 is placed in the through-hole 51 through the upper opening 52b, so that the substrate of the light-emitting diode 10 is supported by the transparent resin 53a. After the transparent resin 5 3 a is hardened by the baking treatment, the light-emitting diode is fixed.
第13頁 582122 五、發明說明(8) 於貝,^51内之透明樹脂53a上。最後,進行配線連接製 程ΐ ^孙透明樹脂53b填滿貫通孔51且覆蓋配線36a與361) 中路貝通孔51之部分,使得發光二極體1〇與配線36a與 36b密封於透明樹脂53a與53b内。 S電源經由突出的金屬墊35a與35b供應至發光二極體 10時’發光二極體10所產生的光線會經由基板11與透明樹 月曰5 3a而射出到外界,如圖4中之箭頭所指示。既然光線不 需經由絕緣承栽座5〇射出到外界,故依據本發明第三實施 例之絕緣承载座5〇不限於由透明材料例如玻璃所形成,而 亦可由例=陶瓷、A1N、Sic、塑膠、樹脂、或印刷電路 ,、以及則述材料之組合所形成。此外,絕緣承載座5 〇亦 得由複數個構件所組合而成,例如藉由使用一絕緣材料外 膜包覆一金屬核心體而形成。 圖5顯不依據本發明第四實施例之發光二極體之封裝 構造之剖面圖。下文僅說明第四實施例不同於第二實施例 之處。 ^ 參照圖5 ’依據本發明第四實施例不同於依據本發明 第二實施例之處在於依據本發明第四實施例之絕緣承載座 60無須為透明且於大約中央的區域處形成有一貫通孔61。 貫通孔61穿過絕緣承載座6〇,而形成下開口 62a與上開口 62b。應注意在本發明中,下開口62a之孔徑尺寸得大於、 等於、或小於上開口 62b之孔徑尺寸,不限於圖5所示之例 子。 如同第二實施例之凹槽41,貫通孔6 1中亦形成有二個Page 13 582122 V. Description of the invention (8) Yu Bei, ^ 51 on the transparent resin 53a. Finally, the wiring connection process is performed. The transparent resin 53b fills the through-hole 51 and covers the portions of the wiring holes 51a and 36b, so that the light-emitting diode 10 and the wirings 36a and 36b are sealed in the transparent resin 53a and Within 53b. When the S power is supplied to the light emitting diode 10 through the protruding metal pads 35a and 35b, the light generated by the light emitting diode 10 will be emitted to the outside through the substrate 11 and the transparent tree 5a, as shown by the arrow in FIG. Indicated. Since the light does not need to be emitted to the outside through the insulating support base 50, the insulating support base 50 according to the third embodiment of the present invention is not limited to being formed of a transparent material such as glass, but may also be made of ceramics, A1N, Sic, Plastic, resin, or printed circuit, and a combination of materials. In addition, the insulating carrier 50 may also be composed of a plurality of components, for example, formed by covering a metal core with an outer film of an insulating material. FIG. 5 is a cross-sectional view showing a package structure of a light emitting diode according to a fourth embodiment of the present invention. Only the differences between the fourth embodiment and the second embodiment will be described below. ^ Referring to FIG. 5 'The fourth embodiment according to the present invention is different from the second embodiment according to the present invention in that the insulating carrier 60 according to the fourth embodiment of the present invention does not need to be transparent and a through-hole is formed at an approximately central area. 61. The through hole 61 passes through the insulating carrier 60 and forms a lower opening 62a and an upper opening 62b. It should be noted that, in the present invention, the aperture size of the lower opening 62a is larger than, equal to, or smaller than the aperture size of the upper opening 62b, and is not limited to the example shown in FIG. Like the groove 41 of the second embodiment, two through holes 61 are also formed.
第14頁Page 14
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582122 五、發明說明(9) 階梯部。藉由類似於第三實施例之製造方法,發光二極體 10之基板11由透明樹脂63a所支撐,然後透明樹脂63b填滿 貫通孔61且覆蓋配線48a與48b,使得發光二極體1〇與配線 48a與48b密封於透明樹脂63a與6 3b内。絕緣承載座60不限 於由透明材料例如玻璃所形成,而亦可由例如陶瓷、 A1N、S i C、塑膠、樹脂、或印刷電路板、以及前述材料之 組合所形成。此外,絕緣承載座60亦得由複數個構件所組 合而成,例如藉由使用一絕緣材料外膜包覆一金屬核心體 而形成。 從圖4與圖5之比較可知,因為配線48a與48b可完全位 於貫通孔6 1内,所以第四實施例之發光二極體之封裝構造 具有小於第三實施例之尺寸。 圖6顯示依據本發明第五實施例之發光二極體之封裝 構造之剖面圖。下文僅說明第五實施例不同於第三實施例 之處。 在第五實施例中,用以密封發光二極體1 〇與配線3 β a 與36b之樹脂係由下樹脂部73a與上樹脂部73b所組成下 樹脂部73a係由透明的材料所形成,用以作為光線射出通 道。較佳者為選擇對於基板11之折射率匹配度高的材料來 形成下樹脂部73a,可降低光線於基板11與下樹脂部73 a間 之界面發生全反射。上樹脂部73b可由具反射性的材料或 摻雜有高反射性材料之樹脂所形成,用以反射光線朝向下 樹脂部73a。此外,為了更加提高發光效率,一反射層(未 圖示)得塗佈於樹脂73b上,用以反射發光二極體1〇所產生582122 V. Description of invention (9) Stepped part. By a manufacturing method similar to the third embodiment, the substrate 11 of the light-emitting diode 10 is supported by the transparent resin 63a, and then the transparent resin 63b fills the through-hole 61 and covers the wirings 48a and 48b, so that the light-emitting diode 10 The wirings 48a and 48b are sealed in transparent resins 63a and 63b. The insulating carrier 60 is not limited to being formed of a transparent material such as glass, but may also be formed of, for example, ceramic, A1N, SIC, plastic, resin, or printed circuit board, and a combination of the foregoing materials. In addition, the insulating carrier 60 must be composed of a plurality of components, for example, formed by covering a metal core with an outer film of an insulating material. As can be seen from the comparison between Fig. 4 and Fig. 5, since the wirings 48a and 48b can be completely located in the through-hole 61, the package structure of the light emitting diode of the fourth embodiment has a size smaller than that of the third embodiment. FIG. 6 shows a cross-sectional view of a packaging structure of a light emitting diode according to a fifth embodiment of the present invention. In the following, only the fifth embodiment differs from the third embodiment. In the fifth embodiment, the resin used to seal the light emitting diode 10 and the wiring 3 β a and 36 b is composed of a lower resin portion 73 a and an upper resin portion 73 b. The lower resin portion 73 a is formed of a transparent material. Used as a light exit channel. It is preferable to select a material having a high refractive index matching with the substrate 11 to form the lower resin portion 73a, which can reduce the total reflection of light at the interface between the substrate 11 and the lower resin portion 73a. The upper resin portion 73b may be formed of a reflective material or a resin doped with a highly reflective material to reflect light toward the lower resin portion 73a. In addition, in order to further improve the luminous efficiency, a reflective layer (not shown) must be coated on the resin 73b to reflect the light emitting diode 10 generated.
582122 五、發明說明(ίο) 的光線朝向下開口52a。再者,一屈光透鏡74得設置於貫 通孔51之下開口 52a處,藉以控制從發光二極體之封裝構 造射出的光線。 圖7顯示依據本發明第六實施例之發光二極體之封裝 構造之剖面圖。下文僅說明第六實施例不同於第四實施例 之處。 在第六實施例中,用以密封發光二極體1〇與配線48a 與48b之樹脂係由下樹脂部8 3a與上樹脂部83b所組成。下 樹脂部8 3 a係由透明的材料所形成,用以作為光線射出通 道。較佳者為選擇對於基板丨丨之折射率匹配度高的材料來 形成下樹脂部83a,可降低光線於基板u與下樹脂部83&間 之界面,生全反射。上樹脂部83b可由具反射性的材料或 推雜有高反射性材料之樹脂所形成,用以反射光線朝向下 樹脂部83a。此外,下樹脂部83a中得摻雜有一螢光材 如磷光劑或者一螢光層84塗佈於貫通孔61之下開口 * 處。基於螢光物質的孔隙度以及塗佈厚度,從二 & 之封裝構造射出的光線之波長被改變,藉 望的顏色之光線。. 挺供具有所期 雖然本發明業已藉由較佳實施例作為例示 應了解者為:本發明不限於此被揭露的實 说明’ 本發明意欲涵蓋對於熟習此項技藝之人士 二二相反地, 種修改與相似配置。因此,申請專利範園二囹=顯的各· 廣的詮釋,以包容所有此類修改與相似配靶…板據最 依據本發明之絕緣承載座、凹槽、以及 。舉例而言, 貝通孔之上開口與582122 V. The light of the invention description (ίο) faces the lower opening 52a. Furthermore, a refractive lens 74 must be disposed at the opening 52a below the through-hole 51 to control the light emitted from the package structure of the light emitting diode. FIG. 7 shows a cross-sectional view of a packaging structure of a light emitting diode according to a sixth embodiment of the present invention. In the following, only the sixth embodiment is different from the fourth embodiment. In the sixth embodiment, the resin used to seal the light emitting diode 10 and the wirings 48a and 48b is composed of a lower resin portion 83a and an upper resin portion 83b. The lower resin portion 8 3 a is formed of a transparent material and serves as a light emission path. It is preferable to select a material having a high refractive index matching with the substrate 丨 to form the lower resin portion 83a, which can reduce the light at the interface between the substrate u and the lower resin portion 83 & The upper resin portion 83b may be formed of a reflective material or a resin doped with a highly reflective material to reflect light toward the lower resin portion 83a. In addition, a fluorescent material such as a phosphor or a fluorescent layer 84 is doped in the lower resin portion 83a and is applied to the openings * under the through-hole 61. Based on the porosity of the fluorescent substance and the thickness of the coating, the wavelength of the light emitted from the package structure of the two & It is expected that although the present invention has been exemplified by preferred embodiments, it should be understood that the present invention is not limited to the actual disclosure disclosed herein. The present invention is intended to cover the opposite of those skilled in the art, This modification is similar to the configuration. Therefore, the patent application of Fanyuan Erji = Xuan's various interpretations to accommodate all such modifications and similar targets ... The board is based on the insulating bearing seat, groove and most according to the present invention. For example, the opening above the Beton hole and
582122 五、發明說明(π) 下開口之平面型態皆不限於矩形而得為任何形狀例如圓 形、橢圓形、或多邊形。 582122 圖式簡單說明 五、【圖示之簡單說明】 圖1顯示習知的發光二極體之封裝構造之一例子之剖 面圖; 圖2(e)顯示依據本發明第一實施例之透明絕緣承載座 之頂視圖, 圖2(b)顯示依據本發明第一實施例之發光二極體之封 裝構造沿著圖2(a)中之線A-A’之剖面圖; 圖3 (a)顯示依據本發明第二實施例之透明絕緣承載座 之頂視圖,582122 V. Description of the invention (π) The planar shape of the opening underneath is not limited to a rectangle and may be any shape such as a circle, an oval, or a polygon. 582122 Brief description of the diagram 5. [Simplified description of the diagram] FIG. 1 shows a cross-sectional view of an example of a conventional packaging structure of a light emitting diode; FIG. 2 (e) shows a transparent insulation according to a first embodiment of the present invention Top view of the carrier, FIG. 2 (b) shows a cross-sectional view of the packaging structure of the light-emitting diode according to the first embodiment of the present invention along the line AA ′ in FIG. 2 (a); FIG. 3 (a) Showing a top view of a transparent insulating carrier according to a second embodiment of the present invention,
圖3 (b)顯示依據本發明第二實施例之發光二極體之封 裝構造沿著圖3(a)中之線B-B’之剖面圖; 圖4顯示依據本發明第三實施例之發光二極體之封裝 構造之剖面圖; 圖5顯示依據本發明第四實施例之發光二極體之封裝 構造之剖面圖; 圖6顯示依據本發明第五實施例之發光二極體之封裝 構造之剖面圖;以及FIG. 3 (b) shows a cross-sectional view of the packaging structure of the light emitting diode according to the second embodiment of the present invention along the line BB ′ in FIG. 3 (a); FIG. 4 shows a package according to the third embodiment of the present invention. Sectional view of a packaging structure of a light emitting diode; FIG. 5 shows a sectional view of a packaging structure of a light emitting diode according to a fourth embodiment of the present invention; FIG. 6 shows a packaging of a light emitting diode according to a fifth embodiment of the present invention Structural section; and
圖7顧示後據本發明第六實施例之發光二極體之封裝 構造之剖面圖。 元件符·號說明: 10 發光二極體 11 基板 12 第一導電型半導體層Fig. 7 is a cross-sectional view showing a packaging structure of a light emitting diode according to a sixth embodiment of the present invention. Symbol and symbol description: 10 Light-emitting diode 11 Substrate 12 First conductive semiconductor layer
第18頁 582122 圖式簡單說明 13 第二導電型半導體層 14,15 電極 16, 17 金屬焊球 18 透明樹脂 20 封裝基座 21, 22 墊 30,40 透明絕緣承載座 31,41 凹槽 32, 42 底面 33a,33b 侧壁面 34a, 3 4 b 平面金屬層 35a, 35b 金屬墊 3 6 a,3 6 b 配線 37, 49 樹脂 43a,43b 下侧壁面 44a, 44b 中間檯面 45a, 45b 上侧壁面 46a,46b 平面金屬層 47a, 47b 金屬墊 48a,48b 配線 50, 60 絕緣承載座 51, 61 貫通孔 52a 下開口 52b 上開口Page 18 582122 Brief description of the diagram 13 Second conductive semiconductor layer 14, 15 Electrode 16, 17 Metal solder ball 18 Transparent resin 20 Package base 21, 22 Pad 30, 40 Transparent insulation carrier 31, 41 Groove 32, 42 Bottom surface 33a, 33b Side wall surface 34a, 3 4 b Flat metal layer 35a, 35b Metal pad 3 6 a, 3 6 b Wiring 37, 49 Resin 43a, 43b Lower side wall surface 44a, 44b Intermediate table surface 45a, 45b Upper side wall surface 46a , 46b Flat metal layers 47a, 47b Metal pads 48a, 48b Wiring 50, 60 Insulating bases 51, 61 Through holes 52a Lower opening 52b Upper opening
第19頁 582122 圖式簡單說明 53a, 53b, 63a, 6 3b 透明樹脂 62a 下開口 62b 上開口 73a 下樹脂部 73b 上樹脂部 74 屈光透鏡 8 3ε 下樹脂部 8 3b 上樹脂部 84 螢光層Page 19 582122 Brief description of drawings 53a, 53b, 63a, 6 3b Transparent resin 62a lower opening 62b upper opening 73a lower resin portion 73b upper resin portion 74 refractive lens 8 3ε lower resin portion 8 3b upper resin portion 84 fluorescent layer
第20頁Page 20
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US7115911B2 (en) | 2004-10-29 | 2006-10-03 | Lighthouse Technology Co., Ltd | LED module and method of packaging the same |
US8432089B2 (en) | 2010-12-08 | 2013-04-30 | Au Optronics Corp. | Light source module and backlight module |
US9741699B2 (en) | 2012-05-29 | 2017-08-22 | Epistar Corporation | Light emitting device |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI398026B (en) * | 2010-04-28 | 2013-06-01 | Advanced Optoelectronic Tech | Light emitting element and light emitting module having the same |
JP5756803B2 (en) * | 2010-07-23 | 2015-07-29 | シャープ株式会社 | Light emitting device and manufacturing method thereof |
CN103456728B (en) | 2012-05-29 | 2016-09-21 | 璨圆光电股份有限公司 | Light-emitting component and light-emitting device thereof |
TWI570350B (en) * | 2013-08-29 | 2017-02-11 | 晶元光電股份有限公司 | Illumination device |
TWI570352B (en) * | 2014-11-28 | 2017-02-11 | 宏齊科技股份有限公司 | Light emitting diode device and light emitting device using the same |
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2003
- 2003-01-27 TW TW92101763A patent/TW582122B/en not_active IP Right Cessation
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7115911B2 (en) | 2004-10-29 | 2006-10-03 | Lighthouse Technology Co., Ltd | LED module and method of packaging the same |
US8432089B2 (en) | 2010-12-08 | 2013-04-30 | Au Optronics Corp. | Light source module and backlight module |
US9741699B2 (en) | 2012-05-29 | 2017-08-22 | Epistar Corporation | Light emitting device |
US10247395B2 (en) | 2012-05-29 | 2019-04-02 | Epistar Corporation | Light emitting device |
US10670244B2 (en) | 2012-05-29 | 2020-06-02 | Epistar Corporation | Light emitting device |
US11255524B2 (en) | 2012-05-29 | 2022-02-22 | Epistar Corporation | Light emitting device |
US11808436B2 (en) | 2012-05-29 | 2023-11-07 | Epistar Corporation | Light emitting apparatus |
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