TW201304217A - LED package and method for manufacturing the same - Google Patents

LED package and method for manufacturing the same Download PDF

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Publication number
TW201304217A
TW201304217A TW100124694A TW100124694A TW201304217A TW 201304217 A TW201304217 A TW 201304217A TW 100124694 A TW100124694 A TW 100124694A TW 100124694 A TW100124694 A TW 100124694A TW 201304217 A TW201304217 A TW 201304217A
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Taiwan
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electrode
emitting diode
light emitting
substrate
package structure
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TW100124694A
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Chinese (zh)
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TWI427837B (en
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Pi-Chiang Hu
Shih-Yuan Hsu
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Advanced Optoelectronic Tech
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic

Abstract

An LED package includes a number of electrodes, a plurality of LED chips electrically connected to the electrodes and an encapsulation covering the LED chips. The electrodes include a plurality of metal layers separated from each other. A plurality of grooves corresponding to the LED chips is defined in one surface of the encapsulation which is attached to the electrodes. The LED chips are received in the grooves respectively and connected with the electrodes through electrode pads thereof. A reflecting portion surrounds a portion of an outside of the encapsulation which is adjacent to the electrodes. The present invention also provides a method for manufacturing the LED package.

Description

發光二極體封裝結構及其製造方法Light-emitting diode package structure and manufacturing method thereof

本發明涉及一種半導體結構,尤其涉及一種發光二極體封裝結構及其製造方法。The present invention relates to a semiconductor structure, and more particularly to a light emitting diode package structure and a method of fabricating the same.

相比於傳統的發光源,發光二極體(Light Emitting Diode,LED)具有重量輕、體積小、污染低、壽命長等優點,其作為一種新型的發光源,已經被越來越廣泛地應用。Compared with the traditional illumination source, the Light Emitting Diode (LED) has the advantages of light weight, small volume, low pollution and long life. It has been widely used as a new type of illumination source. .

習知的發光二極體封裝結構一般包括基板、形成於基板上的電極以及裝設於基板上並與電極電性連接的發光二極體晶片。該發光二極體晶片與電極的連接方式通常採用固晶打線方式完成。然而固晶打線工藝不僅複雜繁瑣,而且容易因人為操作的失誤導致導線脫落,從而影響發光二極體封裝結構的製作良率。而且發光二極體封裝結構的散熱問題一直是業界努力探索的一個主題。A conventional LED package structure generally includes a substrate, an electrode formed on the substrate, and a light emitting diode chip mounted on the substrate and electrically connected to the electrode. The connection mode of the LED body and the electrode is usually completed by a solid crystal wire bonding method. However, the solid crystal wire bonding process is not only complicated and cumbersome, but also easy to cause the wire to fall off due to human error, thereby affecting the manufacturing yield of the LED package structure. Moreover, the heat dissipation problem of the LED package structure has been a topic that the industry has been trying to explore.

有鑒於此,有必要提供一種製造簡單、利於散熱的發光二極體封裝結構及其製造方法。In view of the above, it is necessary to provide a light emitting diode package structure which is simple to manufacture and which is advantageous for heat dissipation, and a manufacturing method thereof.

一種發光二極體封裝結構,包括電極、與電極電連接的複數個發光二極體及覆蓋所述發光二極體的封裝體,所述電極包括複數個彼此間隔設置的金屬層,該封裝體與電極鄰接的面設有與所述發光二極體對應的凹槽,所述發光二極體容置於凹槽內且藉由電極墊與電極連接,該封裝體靠近電極的外圍部分圍設有反射部。A light emitting diode package structure comprising an electrode, a plurality of light emitting diodes electrically connected to the electrode, and a package covering the light emitting diode, wherein the electrode comprises a plurality of metal layers spaced apart from each other, the package body a surface adjacent to the electrode is provided with a groove corresponding to the light emitting diode, and the light emitting diode is received in the groove and connected to the electrode by an electrode pad, and the package body is disposed adjacent to a peripheral portion of the electrode There is a reflection section.

一種發光二極體封裝結構製造方法,包括以下步驟:A method for manufacturing a light emitting diode package structure, comprising the steps of:

提供一透明的載板,該載板的其中一個表面向內凹陷形成複數個凹槽,該載板採用透明材料製成;Providing a transparent carrier plate, one of the surfaces of the carrier plate is recessed inwardly to form a plurality of grooves, and the carrier plate is made of a transparent material;

於載板的凹槽內裝設發光二極體,該發光二極體包括發光二極體晶片和電極墊,該電極墊朝向凹槽的開口方向設置;a light emitting diode is disposed in the recess of the carrier, the light emitting diode includes a light emitting diode wafer and an electrode pad, and the electrode pad is disposed toward the opening direction of the groove;

提供一凹形板,該凹形板包括複數個分離的金屬層及環設於金屬層外圍的反射部;Providing a concave plate, the concave plate comprising a plurality of separate metal layers and a reflection portion disposed on a periphery of the metal layer;

將凹形板蓋設於載板上,並使發光二極體晶片的電極墊與金屬層對應貼設電連接,且所述反射部環設於載板的外側面上。The concave plate is disposed on the carrier, and the electrode pads of the LED chip are electrically connected to the metal layer, and the reflection portion is disposed on the outer surface of the carrier.

由於發光二極體直接與金屬層電性連接,不但省去了為固定和電連接發光二極體晶片而採用的固晶打線等工序步驟,使製作過程更加簡便,而且由於發光二極體直接與金屬層接觸連接,從而利於發光二極體產生的熱量可以直接向下經金屬層傳導至發光二極體封裝結構的外部,利於散熱。Since the light-emitting diode is directly electrically connected to the metal layer, the process steps such as solid-crystal bonding for fixing and electrically connecting the light-emitting diode wafer are omitted, the manufacturing process is more simple, and the light-emitting diode is directly The contact with the metal layer is connected, so that the heat generated by the light-emitting diode can be directly conducted downward through the metal layer to the outside of the light-emitting diode package structure, which is favorable for heat dissipation.

下面參照附圖,結合具體實施例對本發明作進一步的描述。The invention will now be further described with reference to the specific embodiments thereof with reference to the accompanying drawings.

請參見圖1,本發明第一實施方式提供的發光二極體封裝結構100,其包括基板10、電極20、固定於電極20上並與電極20電性連接的發光二極體30、覆蓋發光二極體30的封裝體40及反射部50。Referring to FIG. 1 , a light emitting diode package structure 100 according to a first embodiment of the present invention includes a substrate 10 , an electrode 20 , a light emitting diode 30 fixed on the electrode 20 and electrically connected to the electrode 20 , and a cover light. The package body 40 of the diode 30 and the reflection portion 50.

所述基板10大致呈矩形平板狀,該基板10包括上表面11、與上表面11相對的下表面12以及連接該上表面11和下表面12的複數個側面13。所述基板10上開設有至少兩通孔14。在本實施方式中,所述通孔14為兩個,所述通孔14分別靠近基板10的相對兩側面13,每一通孔14從上表面11向下表面12貫穿延伸。所述通孔14用於容置電極20。所述上表面11和下表面12均為平面,該上表面11用於承載發光二極體30。該基板10的材料可以為具有較高反射率的材料,如陶瓷,矽等。The substrate 10 has a substantially rectangular flat shape, and the substrate 10 includes an upper surface 11, a lower surface 12 opposite to the upper surface 11, and a plurality of side surfaces 13 connecting the upper surface 11 and the lower surface 12. At least two through holes 14 are defined in the substrate 10 . In the present embodiment, the through holes 14 are two, and the through holes 14 are respectively adjacent to opposite side faces 13 of the substrate 10 , and each of the through holes 14 extends from the upper surface 11 to the lower surface 12 . The through hole 14 is for receiving the electrode 20 . The upper surface 11 and the lower surface 12 are both planar, and the upper surface 11 is for carrying the light emitting diode 30. The material of the substrate 10 may be a material having a high reflectance such as ceramic, tantalum or the like.

所述電極20形成於基板10上。該電極20包括第一電極21、第二電極22及位於第一電極21和第二電極22之間的複數個金屬層23。所述第一電極21、金屬層23與第二電極22之間兩兩間隔設置。該第一電極21填充於該基板10的其中一通孔14中。該第一電極21的底面與基板10的下表面12平齊,頂面高於基板10的上表面11。該第二電極22填充於該基板10的另一通孔14中。該第二電極22的底面與基板10的下表面12平齊,頂面高於基板10的上表面11。該第一電極21和第二電極22的底面均暴露於基板10的通孔14內,用於與外界電路連接從而為該發光二極體封裝結構100提供電能。所述金屬層23鋪設於基板10的上表面11位於第一電極21和第二電極22之間的部分。該金屬層23的厚度與第一電極21和第二電極22高出於基板10的上表面11的部分的高度大致相等。具體實施時,所述金屬層23的數量根據發光二極體30的數量的不同而改變。在本實施方式中,所述金屬層23的數量為兩個,該兩金屬層23彼此間隔且電性不同,以用於將三個發光二極體30電性連接。The electrode 20 is formed on the substrate 10. The electrode 20 includes a first electrode 21, a second electrode 22, and a plurality of metal layers 23 between the first electrode 21 and the second electrode 22. The first electrode 21, the metal layer 23 and the second electrode 22 are spaced apart from each other. The first electrode 21 is filled in one of the through holes 14 of the substrate 10. The bottom surface of the first electrode 21 is flush with the lower surface 12 of the substrate 10, and the top surface is higher than the upper surface 11 of the substrate 10. The second electrode 22 is filled in the other through hole 14 of the substrate 10. The bottom surface of the second electrode 22 is flush with the lower surface 12 of the substrate 10, and the top surface is higher than the upper surface 11 of the substrate 10. The bottom surfaces of the first electrode 21 and the second electrode 22 are both exposed in the through holes 14 of the substrate 10 for connecting with external circuits to supply electric power to the LED package structure 100. The metal layer 23 is laid on a portion of the upper surface 11 of the substrate 10 between the first electrode 21 and the second electrode 22. The thickness of the metal layer 23 is substantially equal to the height of the portion of the first electrode 21 and the second electrode 22 that is higher than the upper surface 11 of the substrate 10. In specific implementation, the number of the metal layers 23 varies depending on the number of the light emitting diodes 30. In the present embodiment, the number of the metal layers 23 is two, and the two metal layers 23 are spaced apart from each other and electrically different for electrically connecting the three light emitting diodes 30.

所述發光二極體30裝設於基板10上。具體的,每一發光二極體30包括發光二極體晶片31和電極墊32。該發光二極體晶片31包括發光面311和背光面312,所述電極墊32至少為兩個,並設置於背光面312上。具體實施時,該發光二極體30的數量根據不同需求可以為一個或者複數個。在本實施方式中,所述發光二極體30的數量為三個,分別為第一發光二極體30a、第二發光二極體30b以及第三發光二極體30c。該三個發光二極體30排成一列裝設於基板10之上,每一發光二極體30的兩電極墊32分別與相鄰的兩電極20貼設連接。具體的,第一發光二極體30a的兩電極墊32分別與第一電極21和與該第一電極21相鄰的金屬層23貼設連接。第三發光二極體30c的兩電極墊32分別與第二電極22和與該第二電極22相鄰的另一金屬層23貼設連接。第二發光二極體30b的其中一電極墊32與第一發光二極體30a共同連接同一個金屬層23,另一電極墊32與第二發光二極體30b共同連接同一個金屬層23。在其他實施方式中,還可以於發光二極體30的電極墊32與電極20之間設置異方性導電膠或銀膠,用以增加發光二極體30與電極20之間的緩衝,也可以增加連接強度與導電性。The light emitting diode 30 is mounted on the substrate 10 . Specifically, each of the light emitting diodes 30 includes a light emitting diode chip 31 and an electrode pad 32. The LED chip 31 includes a light emitting surface 311 and a backlight surface 312. The electrode pads 32 are at least two and disposed on the backlight surface 312. In a specific implementation, the number of the LEDs 30 may be one or plural according to different requirements. In the present embodiment, the number of the light emitting diodes 30 is three, which are the first light emitting diode 30a, the second light emitting diode 30b, and the third light emitting diode 30c, respectively. The three LEDs 30 are arranged in a row on the substrate 10, and the two electrode pads 32 of each of the LEDs 30 are respectively connected to the adjacent two electrodes 20. Specifically, the two electrode pads 32 of the first light emitting diode 30a are respectively connected to the first electrode 21 and the metal layer 23 adjacent to the first electrode 21 . The two electrode pads 32 of the third light emitting diode 30c are respectively connected to the second electrode 22 and another metal layer 23 adjacent to the second electrode 22. One of the electrode pads 32 of the second light-emitting diode 30b and the first light-emitting diode 30a are connected to the same metal layer 23, and the other electrode pad 32 and the second light-emitting diode 30b are connected to the same metal layer 23. In other embodiments, an anisotropic conductive paste or a silver paste may be disposed between the electrode pad 32 and the electrode 20 of the light-emitting diode 30 to increase the buffer between the light-emitting diode 30 and the electrode 20, and also Connection strength and conductivity can be increased.

所述封裝體40覆蓋於基板10上,並採用透明材料一體成型,如玻璃製成。該封裝體40包括遠離基板10的出光面41、與基板10貼合的結合面42及連接出光面41和結合面42的外側面43。該結合面42上開設有複數個凹槽44,所述凹槽44自結合面42向靠近出光面41的方向凹陷形成,其中每一凹槽44對應收容一發光二極體30於其內部。在本實施方式中,該凹槽44的深度與發光二極體晶片31和電極墊32的厚度之和大致相等,該凹槽44的長度和寬度分別與發光二極體晶片31的長度和寬度大致相等,從而使發光二極體晶片31收容於對應的凹槽44內時,其頂面和側面均能夠與封裝體40的圍設形成所述凹槽44的內表面接觸,進而利於發光二極體30產生的熱量傳遞至封裝體40而向外散發。所述封裝體40的外側面43與基板10的側面13相平齊,共同形成一豎直的側平面。The package body 40 is covered on the substrate 10 and integrally formed of a transparent material, such as glass. The package body 40 includes a light-emitting surface 41 away from the substrate 10, a bonding surface 42 that is bonded to the substrate 10, and an outer surface 43 that connects the light-emitting surface 41 and the bonding surface 42. A plurality of recesses 44 are formed in the joint surface 42. The recesses 44 are recessed from the joint surface 42 toward the light exiting surface 41. Each of the recesses 44 receives a light emitting diode 30 therein. In the present embodiment, the depth of the groove 44 is substantially equal to the sum of the thicknesses of the LED wafer 31 and the electrode pad 32, and the length and width of the groove 44 are respectively different from the length and width of the LED wafer 31. When the LEDs 31 are received in the corresponding recesses 44, the top surface and the side surfaces of the LEDs 31 can be in contact with the inner surface of the package 40 forming the recesses 44, thereby facilitating the illumination. The heat generated by the polar body 30 is transferred to the package body 40 to be radiated outward. The outer side surface 43 of the package body 40 is flush with the side surface 13 of the substrate 10 to form a vertical side plane.

該反射部50環繞於該發光二極體封裝結構100的側平面的底端部分。具體而言,該反射部50環設於基板10的側面13以及封裝體40的外側面43於靠近基板10的部分。該反射部50底端與基板10的下表面12平齊,而頂端高於發光二極體30的頂面。採用該種結構,使所述發光二極體30發出的光線一部分直接從封裝體40的出光面41射出,另一部分射向反射部50並經反射部50的反射後最終從出光面41射出。該反射部50可選用具有高反射率的材料製成,具體實施時,該反射部50的材料可以與基板10的材料相同且均採用高反射率材料製成,從而反射部50與基板10可以採用一體成型的方式製作而成,如,可採用一具有凹形容置空間的模具同時形成所述基板10和反射部50,並使該反射部50位於基板10的兩端,從而使該基板10和反射部50整體形成“凹”字形結構。The reflecting portion 50 surrounds a bottom end portion of a side plane of the light emitting diode package structure 100. Specifically, the reflection portion 50 is annularly provided on the side surface 13 of the substrate 10 and the outer surface 43 of the package 40 at a portion close to the substrate 10 . The bottom end of the reflecting portion 50 is flush with the lower surface 12 of the substrate 10, and the top end is higher than the top surface of the light emitting diode 30. With this configuration, a part of the light emitted from the light-emitting diode 30 is directly emitted from the light-emitting surface 41 of the package 40, and the other portion is incident on the reflection portion 50, reflected by the reflection portion 50, and finally emitted from the light-emitting surface 41. The reflective portion 50 can be made of a material having a high reflectivity. In a specific implementation, the material of the reflective portion 50 can be the same as that of the substrate 10 and both are made of a high reflectivity material, so that the reflective portion 50 and the substrate 10 can be The substrate 10 and the reflection portion 50 are simultaneously formed by using a mold having a concave accommodating space, and the reflection portion 50 is located at both ends of the substrate 10, thereby making the substrate 10 The reflection portion 50 is integrally formed with a "concave" shape.

在其他實施方式中,還可以在封裝體40的出光面41上和封裝體40未被反射部50覆蓋的另外一部分外側面43上塗覆一層螢光層(圖未示),從而改變發光二極體30發出光線的光學特性。In other embodiments, a phosphor layer (not shown) may be coated on the light-emitting surface 41 of the package 40 and another portion of the outer surface 43 of the package 40 that is not covered by the reflective portion 50, thereby changing the light-emitting diode. The body 30 emits optical properties of light.

本實施方式中,由於發光二極體30藉由電極墊32直接與電極20貼設連接,不僅避免了採用打線工藝造成的製作過程的繁瑣和困難,還可以避免發光二極體封裝結構在使用中存在的導線脫離、斷裂等不良隱患。發光二極體30直接與電極20接觸連接,並且電極20的底端直接外露於基板10的下表面12,從而發光二極體30產生的熱量可直接藉由電極20迅速向下傳導至發光二極體封裝結構100之外,增加該發光二極體封裝結構100的散熱性能。另外,所述封裝體40採用玻璃材料一體成型並覆蓋發光二極體30,不僅避免了現有技術中發光二極體30產生的熱量對樹脂類封裝材料造成的封裝層黃化和碎裂等問題,還可以使發光二極體30產生的另一部分熱量可向上傳導經由封裝體40迅速傳導至發光二極體封裝結構100的外部,達到更高的散熱效率。此外,用於電性連接所述發光二極體30的電極20形成於基板10的上表面11,所述電極20能夠起到反射層的作用,而反射部50環繞於所述基板10的側面13及封裝體40的外側面43與基板10的側面13連接的底端部分,所述金屬層23與反射部50共同圍設形成大致呈U形的反射面,從而將發光二極體30發出的光線有效反射使其從封裝體40的出光面41出射,以增強該發光二極體封裝結構100的出光效率。In the embodiment, the LEDs 30 are directly connected to the electrodes 20 by the electrode pads 32, which not only avoids the cumbersome and difficult manufacturing process caused by the wire bonding process, but also avoids the use of the LED package structure. There are hidden dangers such as detachment and breakage of the wires. The light-emitting diode 30 is directly in contact with the electrode 20, and the bottom end of the electrode 20 is directly exposed on the lower surface 12 of the substrate 10, so that the heat generated by the light-emitting diode 30 can be directly transmitted downward through the electrode 20 to the light-emitting diode 2 In addition to the polar package structure 100, the heat dissipation performance of the light emitting diode package structure 100 is increased. In addition, the package body 40 is integrally formed with a glass material and covers the light-emitting diode 30, thereby avoiding problems such as yellowing and chipping of the encapsulation layer caused by the heat generated by the light-emitting diode 30 in the prior art. It is also possible to allow another portion of the heat generated by the LEDs 30 to be conducted upward through the package 40 to the outside of the LED package structure 100 for higher heat dissipation efficiency. In addition, an electrode 20 for electrically connecting the light-emitting diodes 30 is formed on the upper surface 11 of the substrate 10, the electrode 20 can function as a reflective layer, and the reflective portion 50 surrounds the side of the substrate 10. 13 and a bottom end portion of the outer side surface 43 of the package 40 and the side surface 13 of the substrate 10, the metal layer 23 and the reflecting portion 50 together form a substantially U-shaped reflecting surface, thereby emitting the light emitting diode 30 The light is effectively reflected to be emitted from the light exit surface 41 of the package body 40 to enhance the light extraction efficiency of the light emitting diode package structure 100.

請參閱圖2,為本發明第二實施方式提供的發光二極體封裝結構200,其與第一實施方式的發光二極體封裝結構100不同之處在於,所述基板10a包括複數個分離的金屬層23a和連接相鄰兩金屬層23a之間的複數個絕緣塊24a。所述金屬層23a的厚度與前述基板10的厚度大致相等,相鄰兩金屬層23a之間藉由一絕緣塊24a電性絕緣。每一發光二極體30分別對應連接相鄰兩金屬層23a。具體而言,每一發光二極體30的兩電極墊32分別與相鄰的兩金屬層23a貼設連接。本實施方式中的發光二極體封裝結構200直接採用金屬層23a作為基板,因為金屬層23a採用金屬材料製成,具有較高的熱傳導性以及高反射性能,使發光二極體30產生的熱量向下經由金屬層23a傳導至發光二極體封裝結構200的外部,從而使散熱效率提高;所述反射部50環設於基板10a的側面以及封裝體40的外側面,因而金屬層23a與反射部50共同形成環繞所述發光二極體30的大致呈U形的反射面,從而將發光二極體30發出的光線有效反射使其從封裝體40的出光面41出射,以增強該發光二極體封裝結構100的出光效率。此外,於封裝體40外表面還形成有一層螢光層80。Referring to FIG. 2 , a light emitting diode package structure 200 according to a second embodiment of the present invention is different from the light emitting diode package structure 100 of the first embodiment in that the substrate 10 a includes a plurality of separate structures. The metal layer 23a and a plurality of insulating blocks 24a connecting between the adjacent two metal layers 23a. The thickness of the metal layer 23a is substantially equal to the thickness of the substrate 10, and the adjacent two metal layers 23a are electrically insulated by an insulating block 24a. Each of the light emitting diodes 30 respectively connects the adjacent two metal layers 23a. Specifically, the two electrode pads 32 of each of the light-emitting diodes 30 are respectively connected to the adjacent two metal layers 23a. The LED package structure 200 of the present embodiment directly uses the metal layer 23a as a substrate, because the metal layer 23a is made of a metal material, has high thermal conductivity and high reflection performance, and generates heat generated by the LEDs 30. Conducting downwardly through the metal layer 23a to the outside of the light emitting diode package structure 200, thereby improving heat dissipation efficiency; the reflection portion 50 is annularly disposed on the side surface of the substrate 10a and the outer side surface of the package body 40, and thus the metal layer 23a and the reflection The portions 50 collectively form a substantially U-shaped reflective surface surrounding the LEDs 30, thereby effectively reflecting the light emitted by the LEDs 30 from the light-emitting surface 41 of the package 40 to enhance the illumination. The light extraction efficiency of the polar package structure 100. In addition, a phosphor layer 80 is formed on the outer surface of the package 40.

請參閱圖3,為本發明第三實施方式提供的發光二極體封裝結構300,其與第一實施方式的發光二極體封裝結構100不同之處在於,所述基板10b呈“凹”字形,其採用透明材料製成。該基板10b包括一水平的平板部11b和位於平板部11b外圍的豎直部12b,當然該基板10b還可以為僅包括一水平的平板部11b的板體結構。平板部11b內開設有複數個穿孔13b,每一穿孔13b對應於一發光二極體30的一電極墊32設置並豎直貫穿該基板10b。該基板10b的下表面鋪設複數個金屬層23b,所述金屬層23b兩兩間隔,並分別封住所述穿孔13b的底端。每一金屬層23b包括收容於對應穿孔13b內的一導電柱231b,以對應電性連接一發光二極體30的電極墊32。所述反射部50b形成於豎直部12b的外側面上並環設於封裝體40的外側面於靠近基板10b的部分。本實施方式中的發光二極體封裝結構300採用金屬層23b鋪設於透明的基板10b的下表面,並與發光二極體30電性連接,在起到電連接的作用的同時還可以將發光二極體30射向金屬層23b的光線反射,從而與反射部50b共同形成環繞所述發光二極體30的大致呈U形的反射面,將發光二極體30發出的光線有效反射使其從封裝體40的出光面41出射,提高發光效率,並使出光均勻。此外,於封裝體40外表面還形成有一層螢光層80。Referring to FIG. 3, a light emitting diode package structure 300 according to a third embodiment of the present invention is different from the light emitting diode package structure 100 of the first embodiment in that the substrate 10b has a "concave" shape. It is made of a transparent material. The substrate 10b includes a horizontal flat portion 11b and a vertical portion 12b located at the periphery of the flat portion 11b. Of course, the substrate 10b may also be a plate structure including only one horizontal flat portion 11b. A plurality of through holes 13b are defined in the flat plate portion 11b. Each of the through holes 13b is disposed corresponding to an electrode pad 32 of a light emitting diode 30 and vertically penetrates the substrate 10b. A plurality of metal layers 23b are laid on the lower surface of the substrate 10b, and the metal layers 23b are spaced apart from each other, and the bottom ends of the through holes 13b are respectively sealed. Each of the metal layers 23b includes a conductive post 231b received in the corresponding through hole 13b to electrically connect the electrode pad 32 of the light emitting diode 30. The reflection portion 50b is formed on the outer surface of the vertical portion 12b and is annularly provided on a portion of the outer surface of the package 40 adjacent to the substrate 10b. The light emitting diode package structure 300 of the present embodiment is laid on the lower surface of the transparent substrate 10b by using the metal layer 23b, and is electrically connected to the light emitting diode 30, and can also emit light while functioning as an electrical connection. The light emitted from the diode 30 to the metal layer 23b is reflected, thereby forming a substantially U-shaped reflecting surface surrounding the light-emitting diode 30 together with the reflecting portion 50b, and effectively reflecting the light emitted from the light-emitting diode 30. The light exiting from the light-emitting surface 41 of the package 40 improves the light-emitting efficiency and makes the light output uniform. In addition, a phosphor layer 80 is formed on the outer surface of the package 40.

請參閱圖4,為上述第一實施方式中的發光二極體封裝結構100的製作方法,其步驟包括:Please refer to FIG. 4 , which is a manufacturing method of the LED package structure 100 in the first embodiment, and the steps thereof include:

請同時參閱圖5,提供一透明的載板60,該載板60大致呈矩形,該載板60的其中一個表面向內凹陷形成複數個凹槽61。該載板60採用透明材料如玻璃製成。Referring to FIG. 5 at the same time, a transparent carrier 60 is provided. The carrier 60 is substantially rectangular. One surface of the carrier 60 is recessed inwardly to form a plurality of grooves 61. The carrier 60 is made of a transparent material such as glass.

請參閱圖6,於載板60的每一個凹槽61內裝設一個發光二極體30,該發光二極體30包括發光二極體晶片31和電極墊32,裝設時,將發光二極體晶片31朝向凹槽61並貼設於凹槽61的底面,使電極墊32朝向凹槽61的開口方向設置。Referring to FIG. 6, a light-emitting diode 30 is disposed in each of the grooves 61 of the carrier 60. The light-emitting diode 30 includes a light-emitting diode chip 31 and an electrode pad 32. The polar body wafer 31 faces the groove 61 and is attached to the bottom surface of the groove 61 so that the electrode pad 32 is disposed toward the opening direction of the groove 61.

請參閱圖7,提供一凹形板70,該凹形板70包括一水平的第一板體71和環設於第一板體71外圍的豎直的第二板體72,該第一板體71的尺寸與載板60的尺寸相當。該第一板體71包括面向載板60的一第一表面711和與該第一表面711相對的第二表面712。所述第一板體71的相對兩端分別設有穿孔173,每一穿孔713從該第二表面712向第一表面711貫穿延伸,且所述穿孔713內分別形成有第一電極21和第二電極22。所述第一表面711上設有複數個金屬層23,所述金屬層23與第一電極21和第二電極22之間分別兩兩分隔設置。Referring to FIG. 7, a concave plate 70 is provided. The concave plate 70 includes a horizontal first plate body 71 and a vertical second plate body 72 disposed around the periphery of the first plate body 71. The first plate The size of the body 71 is comparable to the size of the carrier 60. The first plate body 71 includes a first surface 711 facing the carrier plate 60 and a second surface 712 opposite to the first surface 711. The opposite ends of the first plate body 71 are respectively provided with a through hole 173. Each of the through holes 713 extends from the second surface 712 to the first surface 711, and the first electrode 21 and the first electrode 21 are respectively formed in the through hole 713. Two electrodes 22. The first surface 711 is provided with a plurality of metal layers 23, and the metal layer 23 is spaced apart from the first electrode 21 and the second electrode 22, respectively.

請參閱圖8,將凹形板70覆蓋於載板60上,並使第一電極21、第二電極22及金屬層23分別與發光二極體30的電極墊32貼設連接,將所述結構翻轉,即形成發光二極體封裝結構100,如圖1所示。該第一板體71形成為基板10,第二板體72形成為反射部50。Referring to FIG. 8 , the concave plate 70 is covered on the carrier 60 , and the first electrode 21 , the second electrode 22 , and the metal layer 23 are respectively connected to the electrode pads 32 of the LEDs 30 . The structure is flipped, that is, the light emitting diode package structure 100 is formed, as shown in FIG. The first plate body 71 is formed as a substrate 10, and the second plate body 72 is formed as a reflection portion 50.

其中,第二實施方式中的發光二極體封裝結構200的製作方法與上述第一實施方式中的發光二極體100的製作方法類似,其區別僅在於所提供的凹形板的結構不同,具體的,所提供的凹形板的結構與基板10a的結構相同。第三實施方式中的發光二極體封裝結構300的製作方法與上述第一實施方式中的發光二極體100的製作方法類似,其區別僅在於所提供的凹形板的結構不同,具體的,所提供的凹形板的結構與基板10b的結構相同。The manufacturing method of the LED package structure 200 in the second embodiment is similar to the method of fabricating the LED assembly 100 in the first embodiment, and the difference is only in the structure of the concave plate provided. Specifically, the structure of the concave plate provided is the same as that of the substrate 10a. The manufacturing method of the light emitting diode package structure 300 in the third embodiment is similar to the manufacturing method of the light emitting diode 100 in the first embodiment described above, except that the structure of the concave plate provided is different, and the specific The structure of the concave plate provided is the same as that of the substrate 10b.

綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

100、200、300...發光二極體封裝結構100, 200, 300. . . Light emitting diode package structure

10、10a、10b...基板10, 10a, 10b. . . Substrate

11...上表面11. . . Upper surface

11b...平板部11b. . . Flat section

12...下表面12. . . lower surface

12b...豎直部12b. . . Vertical part

13...側面13. . . side

14...通孔14. . . Through hole

20...電極20. . . electrode

21...第一電極twenty one. . . First electrode

22...第二電極twenty two. . . Second electrode

23、23a、23b...金屬層23, 23a, 23b. . . Metal layer

231b...導電柱231b. . . Conductive column

24a...絕緣塊24a. . . Insulating block

30...發光二極體30. . . Light-emitting diode

30a...第一發光二極體30a. . . First light emitting diode

30b...第二發光二極體30b. . . Second light emitting diode

30c...第三發光二極體30c. . . Third light emitting diode

31...發光二極體晶片31. . . Light-emitting diode chip

311...發光面311. . . Luminous surface

312...背光面312. . . Back surface

32...電極墊32. . . Electrode pad

40...封裝體40. . . Package

41...出光面41. . . Glossy surface

42...結合面42. . . Joint surface

43...外側面43. . . Outer side

44、61...凹槽44, 61. . . Groove

50、50b...反射部50, 50b. . . Reflection section

60...載板60. . . Carrier board

70...凹形板70. . . Concave plate

71...第一板體71. . . First plate

711...第一表面711. . . First surface

712...第二表面712. . . Second surface

13b、713...穿孔13b, 713. . . perforation

72...第二板體72. . . Second plate

80...螢光層80. . . Fluorescent layer

圖1為本發明第一實施方式的發光二極體封裝結構的剖面示意圖。1 is a cross-sectional view showing a light emitting diode package structure according to a first embodiment of the present invention.

圖2為本發明第二實施方式的發光二極體封裝結構的剖面示意圖。2 is a cross-sectional view showing a light emitting diode package structure according to a second embodiment of the present invention.

圖3為本發明第三實施方式的發光二極體封裝結構的剖面示意圖。3 is a cross-sectional view showing a light emitting diode package structure according to a third embodiment of the present invention.

圖4為本發明一實施方式的發光二極體封裝結構的製造方法流程圖。4 is a flow chart showing a method of manufacturing a light emitting diode package structure according to an embodiment of the present invention.

圖5至圖8為本發明一實施方式的發光二極體封裝結構的製造過程中各步驟所得的發光二極體封裝結構的剖面示意圖。5 to FIG. 8 are schematic cross-sectional views showing a light emitting diode package structure obtained in each step of a manufacturing process of a light emitting diode package structure according to an embodiment of the present invention.

100...發光二極體封裝結構100. . . Light emitting diode package structure

10...基板10. . . Substrate

11...上表面11. . . Upper surface

12...下表面12. . . lower surface

13...側面13. . . side

14...通孔14. . . Through hole

20...電極20. . . electrode

21...第一電極twenty one. . . First electrode

22...第二電極twenty two. . . Second electrode

23...金屬層twenty three. . . Metal layer

30...發光二極體30. . . Light-emitting diode

30a...第一發光二極體30a. . . First light emitting diode

30b...第二發光二極體30b. . . Second light emitting diode

30c...第三發光二極體30c. . . Third light emitting diode

31...發光二極體晶片31. . . Light-emitting diode chip

311...發光面311. . . Luminous surface

312...背光面312. . . Back surface

32...電極墊32. . . Electrode pad

40...封裝體40. . . Package

41...出光面41. . . Glossy surface

42...結合面42. . . Joint surface

43...外側面43. . . Outer side

44...凹槽44. . . Groove

50...反射部50. . . Reflection section

Claims (10)

一種發光二極體封裝結構,包括電極、與電極電連接的複數個發光二極體及覆蓋所述發光二極體的封裝體,其改良在於:所述電極包括複數個彼此間隔設置的金屬層,該封裝體與電極鄰接的面設有與所述發光二極體對應的凹槽,所述發光二極體容置於凹槽內且藉由電極墊與電極連接,該封裝體靠近電極的外圍部分圍設有反射部。A light emitting diode package structure comprising an electrode, a plurality of light emitting diodes electrically connected to the electrode, and a package covering the light emitting diode, wherein the electrode comprises a plurality of metal layers spaced apart from each other a surface of the package adjacent to the electrode is provided with a recess corresponding to the light emitting diode, and the light emitting diode is received in the recess and connected to the electrode by an electrode pad, and the package is close to the electrode The peripheral portion is surrounded by a reflecting portion. 如申請專利範圍第1項所述的發光二極體封裝結構,其中,還包括支撐所述電極、發光二極體和封裝體於其上表面的基板,該基板上形成有複數個通孔,所述電極還包括分別收容於通孔內的第一電極和第二電極,所述第一電極與第二電極的頂端高於基板的上表面,所述第一電極與第二電極的底端與基板的下表面平齊。The light emitting diode package structure of claim 1, further comprising a substrate supporting the electrode, the light emitting diode and the package on the upper surface thereof, wherein the substrate is formed with a plurality of through holes. The electrode further includes a first electrode and a second electrode respectively received in the through hole, a top end of the first electrode and the second electrode being higher than an upper surface of the substrate, and a bottom end of the first electrode and the second electrode It is flush with the lower surface of the substrate. 如申請專利範圍第2項所述的發光二極體封裝結構,其中,所述金屬層形成於基板的上表面上,並與反射部共同形成反射面以反射發光二極體發出的光線,所述第一電極和第二電極的頂端與基板的上表面之間的高度差與金屬層的厚度相等。The light emitting diode package structure according to claim 2, wherein the metal layer is formed on an upper surface of the substrate, and forms a reflecting surface together with the reflecting portion to reflect light emitted by the light emitting diode. The difference in height between the tips of the first electrode and the second electrode and the upper surface of the substrate is equal to the thickness of the metal layer. 如申請專利範圍第2項所述的發光二極體封裝結構,其中,該基板包括連接於其上表面與下表面之間的外側面,所述反射部進一步環設於該基板的外側面上。The light emitting diode package structure according to claim 2, wherein the substrate comprises an outer side surface connected between the upper surface and the lower surface, and the reflecting portion is further disposed on the outer side surface of the substrate. . 如申請專利範圍第1項所述的發光二極體封裝結構,其中,每相鄰兩金屬層之間藉由一絕緣塊連接,所述絕緣塊與金屬層共同形成承載發光二極體及封裝體於其上的基板。The light-emitting diode package structure of claim 1, wherein each adjacent two metal layers are connected by an insulating block, and the insulating block and the metal layer together form a light-emitting diode and a package. The substrate on which it is attached. 如申請專利範圍第5項所述的發光二極體封裝結構,其中,所述反射部進一步環設於該基板的外側面上。The light emitting diode package structure according to claim 5, wherein the reflecting portion is further disposed on an outer side surface of the substrate. 如申請專利範圍第1項所述的發光二極體封裝結構,其中,還包括一承載所述電極、發光二極體和封裝體於其上表面的基板,該基板採用透明材料製成,該基板內對應發光二極體的電極墊的位置處分別開設有複數個穿孔,所述金屬層鋪設於該基板的下表面並分別封住所述穿孔的底端,每一金屬層包括收容於對應穿孔內的導電柱以與對應電極墊電性連接。The light emitting diode package structure of claim 1, further comprising a substrate carrying the electrode, the light emitting diode and the package on the upper surface thereof, the substrate being made of a transparent material, A plurality of perforations are respectively disposed at positions of the electrode pads corresponding to the LEDs in the substrate, and the metal layers are laid on the lower surface of the substrate and respectively seal the bottom ends of the perforations, and each metal layer is included in the corresponding The conductive pillars in the perforations are electrically connected to the corresponding electrode pads. 如申請專利範圍第1項至第7項中任意一項所述的發光二極體封裝結構,其中,所述封裝體的凹槽為複數個,並分別對應複數個間隔設置的發光二極體形成於封裝體與電極鄰接的面上,該封裝體由玻璃材料一體成型製成。The light emitting diode package structure according to any one of the preceding claims, wherein the package has a plurality of grooves and corresponds to a plurality of spaced light emitting diodes. The package body is formed on a surface adjacent to the electrode, and the package body is integrally formed from a glass material. 一種發光二極體封裝結構製造方法,包括以下步驟:
提供一透明的載板,該載板的其中一個表面向內凹陷形成複數個凹槽,該載板採用透明材料製成;
於載板的凹槽內裝設發光二極體,該發光二極體包括發光二極體晶片和電極墊,該電極墊朝向凹槽的開口方向設置;
提供一凹形板,該凹形板包括複數個分離的金屬層及環設於金屬層外圍的反射部;
將凹形板蓋設於載板上,並使發光二極體晶片的電極墊與金屬層對應貼設電連接,且所述反射部環設於載板的外側面上。
A method for manufacturing a light emitting diode package structure, comprising the steps of:
Providing a transparent carrier plate, one of the surfaces of the carrier plate is recessed inwardly to form a plurality of grooves, and the carrier plate is made of a transparent material;
a light emitting diode is disposed in the recess of the carrier, the light emitting diode includes a light emitting diode wafer and an electrode pad, and the electrode pad is disposed toward the opening direction of the groove;
Providing a concave plate, the concave plate comprising a plurality of separate metal layers and a reflection portion disposed on a periphery of the metal layer;
The concave plate is disposed on the carrier, and the electrode pads of the LED chip are electrically connected to the metal layer, and the reflection portion is disposed on the outer surface of the carrier.
如申請專利範圍第8項所述的發光二極體封裝結構製造方法,其中,該凹形板包括一水平的第一板體和環設於第一板體外圍的豎直的第二板體,所述金屬層兩兩間隔形成於第一板體上,所述第二板體形成為反射部。The method for manufacturing a light emitting diode package structure according to claim 8, wherein the concave plate comprises a horizontal first plate body and a vertical second plate body disposed around the periphery of the first plate body. The metal layers are formed on the first plate body at intervals, and the second plate body is formed as a reflection portion.
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