TWI821731B - Bottom-emission light-emitting diode display - Google Patents
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Abstract
Description
本發明係有關一種底部發光型(bottom-emission)發光二極體顯示器(LED display),特別是關於一種具高發光效能(luminous efficiency)的底部發光型發光二極體顯示器。The present invention relates to a bottom-emission light-emitting diode display (LED display), and in particular to a bottom-emission light-emitting diode display with high luminous efficiency.
微發光二極體(microLED、mLED或μLED)顯示面板為平板顯示器(flat panel display)的一種,其係由尺寸等級為1~10微米之個別精微(microscopic)發光二極體所組成。相較於傳統液晶顯示面板,微發光二極體顯示面板具較大對比度及較快反應時間,且消耗較少功率。微發光二極體與有機發光二極體(OLED)雖然同樣具有低功耗的特性,但是,微發光二極體因為使用三-五族二極體技術(例如氮化鎵),因此相較於有機發光二極體具有較高的亮度(brightness)、較高的發光效能及較長的壽命。MicroLED (microLED, mLED or μLED) display panel is a type of flat panel display, which is composed of individual microscopic light-emitting diodes with a size range of 1 to 10 microns. Compared with traditional liquid crystal display panels, micro-light-emitting diode display panels have larger contrast ratios, faster response times, and consume less power. Although micro-light-emitting diodes and organic light-emitting diodes (OLED) also have low power consumption characteristics, micro-light-emitting diodes use Group III-V diode technology (such as gallium nitride), so compared with Organic light-emitting diodes have higher brightness, higher luminous efficiency and longer life.
底部發光型發光二極體顯示器為發光二極體顯示器的一種,其發光二極體向下發光。於底部發光型發光二極體顯示器中,發光二極體所發射光線首先被反射,接著向下行進,但是可能被發光二極體的接合墊(bonding pad)或基板的相應接觸區(例如電極走線)阻擋,因而降低發光效能。此外,反射的光線可能被發光二極體吸收,因而更降低發光效能。A bottom-emitting light-emitting diode display is a type of light-emitting diode display in which the light-emitting diodes emit downward light. In a bottom-emitting LED display, the light emitted by the LED is first reflected and then travels downward, but may be blocked by the bonding pad of the LED or the corresponding contact area (such as an electrode) of the substrate. wiring), thus reducing the luminous efficiency. In addition, the reflected light may be absorbed by the light-emitting diode, thereby further reducing the luminous efficiency.
因此亟需提出一種新穎的底部發光型發光二極體顯示器,用以克服傳統底部發光型發光二極體顯示器的缺失。Therefore, it is urgent to propose a novel bottom-emitting light-emitting diode display to overcome the shortcomings of the traditional bottom-emitting light-emitting diode display.
鑑於上述,本發明實施例的目的之一在於提出一種底部發光型發光二極體顯示器,具非平滑(non-smooth)反射/封裝層或具不同折射率(refractivity)的封裝層,可增進發功效能。In view of the above, one of the purposes of embodiments of the present invention is to provide a bottom-emitting light-emitting diode display with a non-smooth reflection/encapsulation layer or an encapsulation layer with different refractive indexes (refractivity), which can enhance the Efficacy.
根據本發明實施例,底部發光型發光二極體顯示器包含透明基板、複數發光二極體、封裝層及反射層。發光二極體接合於基板。封裝層形成於基板上以覆蓋發光二極體。反射層形成於封裝層上,以反射發光二極體所發射光線。在一實施例中,反射層具有非平滑形狀。在另一實施例中,封裝層具有不同折射率。According to embodiments of the present invention, a bottom-emitting light-emitting diode display includes a transparent substrate, a plurality of light-emitting diodes, an encapsulation layer, and a reflective layer. The light emitting diode is bonded to the substrate. An encapsulation layer is formed on the substrate to cover the light emitting diode. The reflective layer is formed on the encapsulation layer to reflect the light emitted by the light emitting diode. In one embodiment, the reflective layer has a non-smooth shape. In another embodiment, the encapsulation layers have different refractive indices.
第一圖顯示本發明第一實施例的底部發光型(bottom-emission)發光二極體(LED)顯示器100的剖面圖。The first figure shows a cross-sectional view of a bottom-emission light emitting diode (LED) display 100 according to the first embodiment of the present invention.
在本實施例中,底部發光型發光二極體顯示器(以下簡稱顯示器)100可包含透明基板11,例如玻璃。發光二極體12可藉由接合墊(bonding pad)13,例如焊接凸塊(solder bump),而(翻轉)接合至基板11。本實施例的顯示器100可包含封裝層(packaging layer)14,形成於基板11上,以覆蓋發光二極體12。In this embodiment, the bottom-emitting light-emitting diode display (hereinafter referred to as the display) 100 may include a
在本實施例中,顯示器100可包含反射層15,形成於封裝層14上,以反射發光二極體12所發射光線。根據本實施例的特徵之一,反射層15或/且封裝層14具有非平滑(外部)形狀或表面。在本實施例中,反射層15具有凹陷151,向發光二極體12彎曲,且對齊於發光二極體12(在本實施例中為紅色發光二極體、綠色發光二極體及藍色發光二極體)。In this embodiment, the
相較於傳統具平滑反射層的底部發光型發光二極體顯示器,根據第一圖所示顯示器100,受反射層15所反射光線具有更多的方向(如箭號所示)。藉此,反射光線較可能避開發光二極體12的接合墊13與基板11的相應接觸區(未顯示)。此外,反射的光線較可能避免被發光二極體12吸收。因此,顯示器100的發光效能可大量的增進。Compared with the traditional bottom-emitting light-emitting diode display with a smooth reflective layer, according to the
在本實施例中,封裝層14可包含具高透光度(transmittance)的透明材質,例如光阻、環氧樹脂(epoxy resin)、矽基膠(silicon-based glue)、壓克力(acrylic)或高分子聚合物(polymer)。反射層15可包含反射材質(例如反射率大於70%),例如金屬塗層、反射薄膜或反射膠。In this embodiment, the
在一實施例中,顯示器100的(封裝層14的)非平滑形狀可使用半導體製程來形成。例如,可使用具不同透光度的區域的光罩(例如半色調光罩(half-tone mask)或狹縫光罩(slit mask))以形成特定結構,例如凹陷151。在另一實施例中,可對某一區域進行多次微影曝光(photolithographic exposure)以形成特定結構,例如凹陷151。In one embodiment, the non-smooth shape (of encapsulation layer 14) of
在另一實施例中,顯示器100的非平滑形狀可使用塗佈(coating)製程來形成。例如,可使用塗佈技術(例如噴墨印刷(inkjet printing)、網版印刷(screen printing)、噴霧(spray)或點膠(dispensing))以形成特定結構(例如凹陷151),可配合模製(molding)。在另一實施例中,可使用壓模技術(compress molding)且調整塗佈材質的黏度(viscosity)以形成特定結構,例如凹陷151。In another embodiment, the non-smooth shape of the
在又一實施例中,顯示器100的非平滑形狀可使用黏著技術(adhesion)來形成。例如,可使用具預製結構的薄膜以形成特定結構,例如凹陷151。In yet another embodiment, the non-smooth shape of
第二圖顯示本發明第二實施例的底部發光型發光二極體顯示器200的剖面圖。底部發光型發光二極體顯示器(以下簡稱顯示器)200類似於第一圖的顯示器100,其差異說明如下。The second figure shows a cross-sectional view of a bottom-emitting light-
本實施例的反射層15或/且封裝層14具有非平滑(外部)形狀或表面。在本實施例中,反射層15具有複數凹陷151,分別向發光二極體12(例如紅色發光二極體、綠色發光二極體及藍色發光二極體)彎曲,且分別對齊於發光二極體12。The
第三圖顯示本發明第三實施例的底部發光型發光二極體顯示器300的剖面圖。底部發光型發光二極體顯示器(以下簡稱顯示器)300類似於第一圖的顯示器100,其差異說明如下。The third figure shows a cross-sectional view of a bottom-emitting light-emitting
本實施例的反射層15具有非平滑(外部)形狀或表面。在本實施例中,反射層15具有複數凸塊(convex bump)152,背離發光二極體12向外突出。The
第四顯示本發明第四實施例的底部發光型發光二極體顯示器400的剖面圖。底部發光型發光二極體顯示器(以下簡稱顯示器)400類似於第一圖的顯示器100,其差異說明如下。The fourth shows a cross-sectional view of a bottom-emitting light-
本實施例的反射層15具有非平滑(外部)形狀或表面。在本實施例中,反射層15具有複數凹腔(concave cavity)153,面向發光二極體12向內凹入。The
第五顯示本發明第五實施例的底部發光型發光二極體顯示器500的剖面圖。底部發光型發光二極體顯示器(以下簡稱顯示器)500類似於第一圖的顯示器100,其差異說明如下。The fifth shows a cross-sectional view of the bottom-emitting light-emitting
本實施例的反射層15具有非平滑(外部)形狀或表面。在本實施例中,反射層15具有(凸狀)多面體(polyhedron)形狀,其具有複數多邊(polygonal)表面154。The
第六顯示本發明第六實施例的底部發光型發光二極體顯示器600的剖面圖。底部發光型發光二極體顯示器(以下簡稱顯示器)600類似於第一圖的顯示器100,其差異說明如下。The sixth diagram shows a cross-sectional view of the bottom-emitting light-
本實施例的反射層15具有非平滑(外部)形狀或表面。在本實施例中,反射層15的表面具有不規則(irregular)形狀。在一實施例中,奈米粒子(nanoparticle)155覆蓋封裝層14,再形成反射層15於奈米粒子155上,因而於反射層15的外表面形成不規則形狀。The
第七顯示本發明第七實施例的底部發光型發光二極體顯示器700的剖面圖。The seventh diagram shows a cross-sectional view of the bottom-emitting type light-
在本實施例中,底部發光型發光二極體顯示器(以下簡稱顯示器)700可包含透明基板11,例如玻璃。發光二極體12可藉由接合墊(或焊接凸塊)13而(翻轉)接合至基板11。本實施例的顯示器700可包含封裝層14,形成於基板11上,以覆蓋發光二極體12;且可包含反射層15,形成於封裝層14上,以反射發光二極體12所發射光線。In this embodiment, the bottom-emitting light-emitting diode display (hereinafter referred to as the display) 700 may include a
根據本實施例的特徵之一,封裝層14可包含複數封裝次層(例如14a~14d),從發光二極體12往反射層15,依序覆蓋發光二極體12。特別的是,在本實施例中,下層(或內層)的封裝次層的折射率高於上層(或外層)的封裝次層的折射率。According to one of the features of this embodiment, the
根據第七圖所示的顯示器700,發光二極體12所發射光線可能以異於原始發射方向的方向而被反射回來。如第七圖所示,由於封裝次層14a的高折射率,發光二極體12發射的一些光線會被全反射(total reflection)(如箭號141所示)。發光二極體12發射的另一些光線被封裝次層14a~14d依序折射(如箭號142所示),最後被反射層15反射。發光二極體12發射的另一些光線被封裝次層14a~14c依序折射,接著由於封裝次層14d的低折射率,光線會被全反射(如箭號143所示)。According to the
第八顯示本發明第八實施例的底部發光型發光二極體顯示器800的剖面圖。The eighth diagram shows a cross-sectional view of a bottom-emitting light-emitting
在本實施例中,底部發光型發光二極體顯示器(以下簡稱顯示器)800可包含透明基板11,例如玻璃。發光二極體12可藉由接合墊(或焊接凸塊)13而(翻轉)接合至基板11。本實施例的顯示器800可包含封裝層14,形成於基板11上,以覆蓋發光二極體12;且可包含反射層15,形成於封裝層14上,以反射發光二極體12所發射光線。In this embodiment, the bottom-emitting light-emitting diode display (hereinafter referred to as the display) 800 may include a
根據本實施例的特徵之一,於封裝層14加入具不同折射率的粒子144或粉末,使得發光二極體12所發射光線的行進方向受到粒子144或粉末的改變(如箭號所示)。在本實施例中,粒子144或粉末可為具高折射率的粉末,例如量子點(quantum dot)粉末或金屬球。According to one of the features of this embodiment,
以上所述僅為本發明之較佳實施例而已,並非用以限定本發明之申請專利範圍;凡其它未脫離發明所揭示之精神下所完成之等效改變或修飾,均應包含在下述之申請專利範圍內。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the patentable scope of the present invention; all other equivalent changes or modifications made without departing from the spirit of the invention shall be included in the following. Within the scope of patent application.
100:底部發光型發光二極體顯示器
200:底部發光型發光二極體顯示器
300:底部發光型發光二極體顯示器
400:底部發光型發光二極體顯示器
500:底部發光型發光二極體顯示器
600:底部發光型發光二極體顯示器
700:底部發光型發光二極體顯示器
800:底部發光型發光二極體顯示器
11:基板
12:發光二極體
13:接合墊
14:封裝層
14a~14d:封裝次層
141~143:光線行進方向
144:粒子
15:反射層
151:凹陷
152:凸塊
153:凹腔
154:多邊表面
155:奈米粒子
100: Bottom-emitting light-emitting diode display
200: Bottom-emitting light-emitting diode display
300: Bottom-emitting light-emitting diode display
400: Bottom-emitting light-emitting diode display
500: Bottom-emitting light-emitting diode display
600: Bottom-emitting light-emitting diode display
700: Bottom-emitting light-emitting diode display
800: Bottom-emitting light-emitting diode display
11:Substrate
12:Light emitting diode
13:Joining pad
14:
第一圖顯示本發明第一實施例的底部發光型發光二極體顯示器的剖面圖。 第二圖顯示本發明第二實施例的底部發光型發光二極體顯示器的剖面圖。 第三圖顯示本發明第三實施例的底部發光型發光二極體顯示器的剖面圖。 第四圖顯示本發明第四實施例的底部發光型發光二極體顯示器的剖面圖。 第五圖顯示本發明第五實施例的底部發光型發光二極體顯示器的剖面圖。 第六圖顯示本發明第六實施例的底部發光型發光二極體顯示器的剖面圖。 第七圖顯示本發明第七實施例的底部發光型發光二極體顯示器的剖面圖。 第八圖顯示本發明第八實施例的底部發光型發光二極體顯示器的剖面圖。 The first figure shows a cross-sectional view of a bottom-emitting light-emitting diode display according to a first embodiment of the present invention. The second figure shows a cross-sectional view of a bottom-emitting light-emitting diode display according to a second embodiment of the present invention. The third figure shows a cross-sectional view of a bottom-emitting light-emitting diode display according to a third embodiment of the present invention. The fourth figure shows a cross-sectional view of a bottom-emitting light-emitting diode display according to a fourth embodiment of the present invention. The fifth figure shows a cross-sectional view of a bottom-emitting light-emitting diode display according to the fifth embodiment of the present invention. The sixth figure shows a cross-sectional view of a bottom-emitting light-emitting diode display according to the sixth embodiment of the present invention. The seventh figure shows a cross-sectional view of a bottom-emitting light-emitting diode display according to the seventh embodiment of the present invention. The eighth figure shows a cross-sectional view of a bottom-emitting light-emitting diode display according to the eighth embodiment of the present invention.
200:底部發光型發光二極體顯示器 200: Bottom-emitting light-emitting diode display
11:基板 11:Substrate
12:發光二極體 12:Light emitting diode
13:接合墊 13:Joining pad
14:封裝層 14: Encapsulation layer
15:反射層 15: Reflective layer
151:凹陷 151:dent
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN2922136Y (en) * | 2006-04-28 | 2007-07-11 | 亿光电子工业股份有限公司 | LED package structure |
TW201304217A (en) * | 2011-07-08 | 2013-01-16 | Advanced Optoelectronic Tech | LED package and method for manufacturing the same |
TW201344957A (en) * | 2012-04-20 | 2013-11-01 | Genesis Photonics Inc | Semiconductor light emitting device and flip chip package device |
TW201346010A (en) * | 2006-08-22 | 2013-11-16 | Mitsubishi Chem Corp | Semiconductor device member, liquid for forming semiconductor device member, method for manufacturing semiconductor device member, and liquid for forming semiconductor device member using the method |
TW201513406A (en) * | 2013-08-29 | 2015-04-01 | Nichia Corp | Light emitting device |
CN111883009A (en) * | 2020-08-27 | 2020-11-03 | 季华实验室 | Glass substrate micro-interval LED display module and display |
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2021
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2922136Y (en) * | 2006-04-28 | 2007-07-11 | 亿光电子工业股份有限公司 | LED package structure |
TW201346010A (en) * | 2006-08-22 | 2013-11-16 | Mitsubishi Chem Corp | Semiconductor device member, liquid for forming semiconductor device member, method for manufacturing semiconductor device member, and liquid for forming semiconductor device member using the method |
TW201304217A (en) * | 2011-07-08 | 2013-01-16 | Advanced Optoelectronic Tech | LED package and method for manufacturing the same |
TW201344957A (en) * | 2012-04-20 | 2013-11-01 | Genesis Photonics Inc | Semiconductor light emitting device and flip chip package device |
TW201513406A (en) * | 2013-08-29 | 2015-04-01 | Nichia Corp | Light emitting device |
CN111883009A (en) * | 2020-08-27 | 2020-11-03 | 季华实验室 | Glass substrate micro-interval LED display module and display |
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